AO7411 20V P-Channel MOSFET General Description Product Summary The AO7411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-4.5V) -20V -1.8A RDS(ON) (at VGS=-4.5V) < 120mΩ RDS(ON) (at VGS =-2.5V) < 150mΩ RDS(ON) (at VGS=-1.8V) < 200mΩ Top View VDS SC-70-6 (SOT-323) Bottom View D Top View D D G 6 D 2 5 D 3 4 S 1 G S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 4: July 2010 Steady-State Steady-State A -10 W 0.4 -55 to 150 TJ, TSTG Symbol t ≤ 10s V 0.63 PD TA=70°C ±8 -1.5 IDM TA=25°C Units V -1.8 ID TA=70°C Maximum -20 RθJA RθJL www.aosmd.com Typ 160 180 130 °C Max 200 220 160 Units °C/W °C/W °C/W Page 1 of 5 AO7411 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.4 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -10 TJ=55°C ±100 TJ=125°C tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time -0.7 560 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge tD(on) mΩ mΩ DYNAMIC PARAMETERS Input Capacitance Ciss Qgd 160 10 IS=-1A,VGS=0V Gate Source Charge 90 mΩ Maximum Body-Diode Continuous Current Qgs 120 200 Diode Forward Voltage Gate resistance 65 150 VSD Rg V A 80 IS Reverse Transfer Capacitance -1 nA 100 VDS=-5V, ID=-1.8A Crss -0.65 µA VGS=-2.5V, ID=-1.6A Forward Transconductance Output Capacitance Units VGS=-1.8V, ID=-1.0A gFS Coss -5 VDS=0V, VGS= ±8V VGS=-4.5V, ID=-1.8A Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ VGS=-4.5V, VDS=-10V, ID=-1.8A S -1 V -1 A 745 pF 80 pF 70 pF 15 23.0 8.5 11 Ω nC 1.2 nC Gate Drain Charge 2.1 nC Turn-On DelayTime 7.2 ns 36 ns 53 ns 56 ns VGS=-4.5V, VDS=-10V, RL=5.55Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=-1.8A, dI/dt=100A/µs 37 Qrr Body Diode Reverse Recovery Charge IF=-1.8A, dI/dt=100A/µs 27 49 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: July 2010 www.aosmd.com Page 2 of 5 AO7411 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 12 -3V -4.5V VDS=-5V 10 15 8 -ID(A) -ID (A) -2.5V 10 -2V 6 4 25°C 125°C 5 2 VGS=-1.5V 0 0 0 1 2 3 4 0.5 5 140 1.5 2 2.5 120 VGS=-2.5V 110 100 90 VGS=-4.5V 80 70 Normalized On-Resistance 1.6 VGS=-1.8V 130 RDS(ON) (mΩ Ω) 1 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 60 VGS=-2.5V ID=-1.6A 1.4 VGS=-4.5V ID=-1.8A 1.2 VGS=-1.8V ID=-1.0A 1 17 5 2 10 0.8 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 200 1.0E+02 ID=-1.8A 1.0E+01 170 40 140 -IS (A) RDS(ON) (mΩ Ω) 1.0E+00 125° 110 125° 1.0E-01 1.0E-02 25° 1.0E-03 80 1.0E-04 25° 1.0E-05 50 1 4 5 6 7 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 4: July 2010 2 3 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO7411 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1400 VDS=-10V ID=-1.8A 1200 1000 Capacitance (pF) -VGS (Volts) 4 3 2 800 Ciss 600 400 Coss 1 200 0 Crss 0 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 20 100 100.0 -ID (Amps) 10.0 10µs 100µs RDS(ON) limited 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C Power (W) TA=25°C 10 1 10s DC 0.0 0.1 0.01 0.1 1 -VDS (Volts) 10 100 0.0001 0.001 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=220°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 4: July 2010 www.aosmd.com Page 4 of 5 AO7411 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 4: July 2010 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5