DTL9604 www.din-tek.jp N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () ID (A)a 0.0022 at VGS = 10 V 55 0.0025 at VGS = 6 V 55 0.0028 at VGS = 4.5 V 50 Qg (Typ.) • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Low Qg for High Efficiency 27.5 nC TO-220AB APPLICATIONS • Primary Side Switch D • • • • • • G POL Synchronous Rectifier DC/DC Converter Amusement System Industrial LED Backlighting S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C Limit 60 ± 20 55a 55a Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation TC = 25 °C TA = 25 °C L =0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C 35.8b, c IDM 28.6b, c 350 5.6b, c 40 80 104 66.6 IAS EAS PD TJ, Tstg Soldering Recommendations (Peak Temperature) A 55a IS TA = 70 °C Operating Junction and Storage Temperature Range V ID TA = 70 °C Pulsed Drain Current (60 µs Pulse Width) Unit mJ 6.25b, c 4b, c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) t 10 s Symbol RthJA Steady State RthJC Typical 15 0.9 Maximum 20 1.2 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. 1 DTL9604 www.din-tek.jp SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 VGS(th) Temperature Coefficient VGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Parameter Typ. Max. Unit Static Drain-Source Breakdown Voltage -6 1 Forward Transconductancea RDS(on) gfs 2.5 V ± 100 nA VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C 10 VDS 5 V, VGS = 10 V 30 VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea V mV/°C µA A 0.0018 0.0022 VGS = 6 V, ID = 20 A 0.0023 0.0025 VGS = 4.5 V, ID = 20 A 0.0025 0.0028 VDS = 15 V, ID = 20 A 82 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 4365 VDS = 30 V, VGS = 0 V, f = 1 MHz 177 VDS = 30 V, VGS = 10 V, ID = 20 A VDS = 30 V, VGS = 4.5 V, ID = 20 A 63.5 96 27.5 42 12 VDD = 30 V, RL = 3 ID 10 A, VGEN = 10 V, Rg = 1 0.4 1.2 2.4 14 28 11 22 33 60 tf 11 22 td(on) 47 90 97 180 td(off) tr td(off) nC 5.9 f = 1 MHz td(on) tr pF 3270 VDD = 30 V, RL = 3 ID 10 A, VGEN = 4.5 V, Rg = 1 tf 32 60 13 26 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 60 100 IS = 5 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.73 1.1 V 79 120 ns 88 135 nC 32 47 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTL9604 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 100 VGS = 10 V thru 4 V 80 ID - Drain Current (A) ID - Drain Current (A) 80 60 40 VGS = 3 V 20 TC = 25 °C 60 40 20 TC = 125 °C VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 0 2.5 TC = - 55 °C 0.0 1.0 VDS - Drain-to-Source Voltage (V) 3.0 4.0 5.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 7000 0.0050 5600 C - Capacitance (pF) 0.0040 RDS(on) - On-Resistance (Ω) 2.0 VGS = 4.5 V 0.0030 0.0020 VGS = 10 V Ciss 4200 Coss 2800 1400 0.0010 Crss 0.0000 0 20 60 40 ID - Drain Current (A) 80 0 100 0 12 48 60 Capacitance 10 2.0 ID = 20 A ID = 20 A 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 36 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage VDS = 30 V 6 VDS = 20 V VDS = 40 V 4 2 0 24 0 13 26 39 Qg - Total Gate Charge (nC) Gate Charge 52 65 VGS = 10 V 1.7 1.4 VGS = 4.5 V 1.1 0.8 0.5 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature 3 DTL9604 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.015 ID = 20 A 0.012 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.009 0.006 TJ = 125 °C 0.003 0.001 0.0 0.2 0.4 0.6 0.8 1.0 0.000 1.2 TJ = 25 °C 0 0.5 200 0.2 160 - 0.1 120 ID = 5 mA - 0.4 - 1.0 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 IDM Limited ID Limited 1 ms 10 ID - Drain Current (A) 8 10 80 TJ - Temperature (°C) 10 ms Limited by RDS(on)* 1 100 ms 1s 0.1 10 s TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 6 40 ID = 250 μA - 50 4 On-Resistance vs. Gate-to-Source Voltage Power (W) VGS(th) - Variance (V) Source-Drain Diode Forward Voltage - 0.7 2 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) DC 100 10 DTL9604 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 160 ID - Drain Current (A) 128 96 Package Limited 64 32 0 0 25 50 75 100 125 TC - Case Temperature (°C) 150 125 3.0 100 2.4 75 1.8 Power (W) Power (W) Current Derating* 50 1.2 0.6 25 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 DTL9604 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 54 °C/W 0.02 3. T JM - T A = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 0.0001 t1 t2 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.01 0.0001 0.1 0.05 0.02 Single Pulse 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 6 1 10 Package Information www.din-tek.jp TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 Notes * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) 1 Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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