AP4509AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 ▼ Good Thermal Performance RDS(ON) ▼ Fast Switching Performance ID ▼ RoHS Compliant & Halogen-Free 30V 10mΩ 14A P-CH BVDSS S1 G1 S2 G2 Description TO-252-4L Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. -30V RDS(ON) 23mΩ ID -9.5A D1 D2 G1 G2 S1 S2 o Absolute Maximum Ratings@Tj=25 C(unless otherwise specified) Symbol Parameter Rating N-channel Units P-channel VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage +20 +20 V 14 -9.5 A 11 -7.6 A 50 -40 A ID@TA=25℃ ID@TA=70℃ Drain Current 3 Drain Current 3 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 3.13 W Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 6 ℃/W 40 ℃/W 1 201501162 AP4509AGH-HF N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 Test Conditions Min. Typ. Max. Units VGS=0V, ID=250uA 30 - - V VGS=10V, ID=11A - - 10 mΩ VGS=5V, ID=7A - - 16 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=7A - 21 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=7A - 15 24 nC Qgs Gate-Source Charge VDS=24V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 10 - nC td(on) Turn-on Delay Time VDS=15V - 10 - ns tr Rise Time ID=7A - 7 - ns td(off) Turn-off Delay Time RG=3.3Ω - 25 - ns tf Fall Time VGS=10V - 11 - ns Ciss Input Capacitance VGS=0V - 715 1140 pF Coss Output Capacitance VDS=25V - 220 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 160 - pF Min. Typ. IS=2.6A, VGS=0V - - 1.2 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=7A, VGS=0V - 25 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 20 - nC 2 AP4509AGH-HF o P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -30 - - V VGS=-10V, ID=-8A - - 23 mΩ VGS=-5V, ID=-5A - - 35 mΩ VGS=0V, ID=-250uA Max. Units BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V 2 gfs Forward Transconductance VDS=-10V, ID=-5A - 15 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-5A - 17 27.2 nC Qgs Gate-Source Charge VDS=-24V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 10 - nC td(on) Turn-on Delay Time VDS=-15V - 11 - ns tr Rise Time ID=-5A - 6 - ns td(off) Turn-off Delay Time RG=3.3Ω - 40 - ns tf Fall Time VGS=-10V - 26 - ns Ciss Input Capacitance VGS=0V - 1260 2000 pF Coss Output Capacitance VDS=-25V - 210 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 185 - pF Source-Drain Diode Min. Typ. VSD Symbol Forward On Voltage2 Parameter IS=-2.6A, VGS=0V Test Conditions - - Max. Units -1.2 V trr Reverse Recovery Time IS=-5A, VGS=0V - 21 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 14 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test. 3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP4509AGH-HF N-Channel 40 40 ID , Drain Current (A) 30 20 10V 7.0V 6.0V 5.0V V G = 4.0V T A = 150 o C ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V G = 4.0V T A = 25 o C 30 20 10 10 0 0 0 1 2 3 0 4 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.4 15 ID=7A I D = 11 A V G =10V T A =25 o C 2.0 Normalized RDS(ON) RDS(ON) (mΩ ) 13 11 1.6 1.2 9 0.8 0.4 7 2 3 4 5 6 7 8 9 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 1.6 T j =150 o C 6 Normalized VGS(th) IS(A) 8 T j =25 o C 4 1.2 0.8 2 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP4509AGH-HF N-Channel f=1.0MHz 1000 I D =7A V DS =24V 8 800 C iss C (pF) VGS , Gate to Source Voltage (V) 10 6 600 4 400 2 200 C oss C rss 0 0 0 10 20 30 1 40 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 100us ID (A) 10 1ms 10ms 100ms 1 1s 0.1 DC T A =25 o C Single Pulse 0.01 Normalized Thermal Response (R thja) Duty factor=0.5 Operation in this area limited by RDS(ON) 0.2 0.1 0.1 0.05 0.02 0.01 PDM t Single Pulse 0.01 T Duty factor = t/T Peak Tj = PDM x Rthja + TA Rthja=75℃ ℃ /W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 5 AP4509AGH-HF P-Channel 40 40 -10V -7.0V -6.0V -5.0V V G = -4.0V -ID , Drain Current (A) 30 20 10 30 20 10 0 0 0 1 2 3 4 5 0 1 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 35 2.4 I D = -8A V G = -10V I D = -5 A o T A =25 C 31 2.0 Normalized RDS(ON) RDS(ON) (mΩ ) -10V -7.0V -6.0V -5.0V V G = -4.0V T A = 150 o C -ID , Drain Current (A) o T A = 25 C 27 23 1.6 1.2 0.8 19 0.4 15 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) -V GS ,Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 8 1.4 1.2 4 T j =150 o C Normalized VGS(th) -IS(A) 6 T j =25 o C 1.0 0.8 2 0.6 0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP4509AGH-HF P-Channel f=1.0MHz 2000 8 1600 I D = -5 A V DS = -24 V C iss C (pF) -VGS , Gate to Source Voltage (V) 10 6 1200 4 800 2 400 C oss C rss 0 0 0 10 20 30 1 40 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 100us -ID (A) 10 1ms 10ms 1 100ms 1s 0.1 DC o T A =25 C Single Pulse 0.01 Normalized Thermal Response (R thja) Duty factor=0.5 Operation in this area limited by RDS(ON) 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + TA Rthja=75℃ ℃ /W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 7 AP4509AGH-HF MARKING INFORMATION 4509AGH Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 8