DSK DL4759 Zener diode Datasheet

Diode Semiconductor Korea
ZENER DIODES
DL4728 - - - DL4764
POWER DISSIPATION: 1.0 W
FEATURES
Silicon planar power zener diodes
MELF
For use in stabilizing and clipping circuits with high
power rating.
Standard zener voltage tolerance is ±10%. Add
Cathode indification
φ2.4±0.15
suffix "A" for ±5% tolerance. other zener voltage
and tolerances are available upon request.
MECHANICAL DATA
0.4±0.1
Case:MELF, glass case
5.3±0.2
Terminals: solderable per MIL-STD-202, method 208
Polarity: cathode band
Marking: type number
Approx. weight: 0.25 grams.
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
PDiss
1.01)
W
Z-current
IZ
PV/VZ
mA
Junction temperature
TJ
175
Storage temperature range
Ts
-55---+175
RThJA
170
K/W
TYP
MAX
UNIT
1.2
V
Zener current (see Table "Characteristics")
Pow er dissipation @ Tamb 50
Junction ambient I=9.5mm(3/8 ), TL=constant
SYMBOL
Forw ard voltage at IF=200mA
VF
1)Valid provided that electrodes re kept at ambient temperature.
MIN
1)
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Diode Semiconductor Korea
ELECTRICAL CHARACTERISTICS
(TA=25
)
Max surge
current
8.3ms
Maximum
regulator
current 2)
@V R
[email protected]
=25
IZM @Tamb
=50
(μA )
(V )
(mA )
(mA )
1.0
100
1
1380
276
400
1.0
100
1
1260
252
9
400
1.0
50
1
1190
234
58
9
400
1.0
10
1
1070
217
53
8
500
1.0
10
1
970
193
5.1
49
7
550
1.0
10
1
890
178
DL4734
5.6
45
5
600
1.0
10
2
810
462
DL4735
6.2
41
2
700
1.0
10
3
730
146
DL4736
6.8
37
3.5
700
1.0
10
4
660
133
DL4737
7.5
34
4.0
700
0.5
10
5
605
121
DL4738
8.2
31
4.5
700
0.5
10
6
550
110
DL4739
9.1
28
5.0
700
0.5
10
7
500
100
DL4740
10
25
7
700
0.25
10
7.6
454
91
DL4741
11
23
8
700
0.25
5
8.4
414
83
DL4742
12
21
9
700
0.25
5
9.1
380
76
DL4743
13
19
10
700
0.25
5
9.9
344
69
DL4744
15
17
14
700
0.25
5
11.4
304
61
DL4745
16
15.5
16
700
0.25
5
12.2
285
57
DL4746
18
14
20
750
0.25
5
13.7
250
50
DL4747
20
12.5
22
750
0.25
5
15.2
225
45
DL4748
22
11.5
23
750
0.25
5
16.7
205
41
DL4749
24
10.5
25
750
0.25
5
18.2
190
38
DL4750
27
9.5
35
750
0.25
5
20.6
170
34
DL4751
30
8.5
40
1000
0.25
5
22.8
150
30
Nominal
zener
voltage 1)
Test
current
V [email protected]
IZT
IZT @Z ZT
Z [email protected]
IZK
IR
(V )
(mA )
(Ω)
(Ω)
(m A)
DL4728
3.3
76
10
400
DL4729
3.6
69
10
DL4730
3.9
64
DL4731
4.3
DL4732
4.7
DL4733
Maximum dynamic impedance
Maximum reverse
leakage current
Type
DL4752
33
7.5
45
1000
0.25
5
25.1
135
27
DL4753
36
7.0
50
1000
0.25
5
27.4
125
25
DL4754
39
6.5
60
1000
0.25
5
29.7
115
23
DL4755
43
6.0
70
1500
0.25
5
32.7
110
22
DL4756
47
5.5
80
1500
0.25
5
35.8
95
19
DL4757
51
5.0
95
1500
0.25
5
38.8
90
18
DL4758
56
4.5
110
2000
0.25
5
42.6
80
16
DL4759
62
4.0
125
2000
0.25
5
47.1
70
14
DL4760
68
3.7
150
2000
0.25
5
51.7
65
13
DL4761
75
3.3
175
2000
0.25
5
56.0
60
12
DL4762
82
3.0
200
3000
0.25
5
62.2
55
11
DL4763
91
2.8
250
3000
0.25
5
69.2
50
10
DL4764
100
2.5
350
3000
0.25
5
79.0
45
9
1)Based on dc_m easurem ent at theral equilibrium while m aitaining the lead tem perature (TL) at 30
2)Valid prov ided that electrodes at a distance of 10 m m f orm case kept at am bient tem perature.
*)Additionnal m easurem ent of v oltage gruup 9v 1 to 75 at 95% V ZMIN
35nA at TJ25
+1
,9.5m m (3/8")f rom the D iode body .
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Diode Semiconductor Korea
DL4728 - - - DL4764
FIG.1 -- BREAKDOWN CHARACTERISTICS
mA
5
100
10
15
20
25
30 V
80
IZ
60
40
20
DL4750
DL4749
DL4748
DL4747
DL4744
DL4741
DL4742
DL4739
DL4735
DL4733
DL4732
DL4728
DL4731
0
VZ
FIG.2 -- ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE
W
1.0
0.8
Ptot
0.6
0.4
0.2
0
0
100
200℃
Tamb
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