Suntac CR03AM Sensitive gate silicon controlled rectifier Datasheet

NCR169D
A
Advance
Information
General
Purpose
STC CR03AM
Sensitive Gate
Silicon Controlled Rectifier
SCR
0.8 AMPERES RMS
600 VOLTS
Reverse Blocking Thyristor
PNPN device designed for line-powered general purpose
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in a cost effective plastic TO-92 package.
• Sensitive Gate Allows Direct Triggering by Microcontrollers and
Other Logic Circuits
• On–State Current Rating of 0.8 Amperes RMS at 80°C
• Surge Current Capability – 10 Amperes
• Immunity to dV/dt – 20 V/µsec Minimum at 110°C
• Glass-Passivated Surface for Reliability and Uniformity
• Blocking Voltage to 600 Volts
G
A
1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off–State Voltage (Note 1.)
(TJ = *40 to 110°C, Sine Wave, 50 to
60 Hz; Gate Open)
VDRM,
VRRM
600
Volts
On-State RMS Current
(TC = 80°C) 180° Conduction Angles
IT(RMS)
0.8
Amp
ITSM
10
Amps
I2t
0.415
A2s
PGM
0.1
Watt
PG(AV)
0.10
Watt
Forward Peak Gate Current
(TA = 25°C, Pulse Width v 1.0 µs)
IGM
1.0
Amp
Reverse Peak Gate Voltage
(TA = 25°C, Pulse Width v 1.0 µs)
VGRM
5.0
Volts
Operating Junction Temperature Range
@ Rate VRRM and VDRM
TJ
–40 to
110
°C
Storage Temperature Range
Tstg
–40 to
150
°C
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = 25°C)
Circuit Fusing Consideration (t = 10 ms)
Forward Peak Gate Power
(TA = 25°C, Pulse Width v 1.0 µs)
Forward Average Gate Power
(TA = 25°C, t = 20 ms)
K
2
3
TO−92 (TO−226)
CASE 029
STYLE 10
PIN ASSIGNMENT
14
Cathode
2
Anode
3
Gate
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant source such that the voltage
ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2000
December, 2000 – Rev. 0
1
Publication Order Number:
NCR169D/D
CR03AM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
RθJC
RθJA
75
200
°C/W
TL
260
°C
Thermal Resistance – Junction to Case
– Junction to Ambient
Lead Solder Temperature
(t1/16″ from case, 10 secs max)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
–
–
–
–
10
0.1
µA
mA
VTM
–
–
1.7
Volts
OFF CHARACTERISTICS
Peak Repetitive Forward or
Reverse Blocking Current (Note 1.)
(VD = Rated VDRM and VRRM; RGK = 1.0 kΩ)
IDRM, IRRM
TC = 25°C
TC = 110°C
ON CHARACTERISTICS
Peak Forward On–State Voltage(*)
(ITM = 1.0 Amp Peak @ TA = 25°C)
Gate Trigger Current (Continuous dc) (Note 2.)
(VAK = 12 V, RL = 100 Ohms)
TC = 25°C
IGT
–
6
8
µA
Holding Current (Note 2.)
(VAK = 12 V, IGT = 0.5 mA)
TC = 25°C
TC = –40°C
IH
–
–
0.5
–
5.0
10
mA
Latch Current
(VAK = 12 V, IGT = 0.5 mA, RGK = 1.0 k)
TC = 25°C
TC = –40°C
IL
–
–
0.6
–
10
15
mA
Gate Trigger Voltage (Continuous dc) (Note 2.)
(VAK = 12 V, RL = 100 Ohms, IGT = 10 mA)
TC = 25°C
TC = –40°C
VGT
–
–
0.62
–
0.8
1.2
Volts
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms,
TJ = 110°C)
dV/dt
20
35
–
V/µs
Critical Rate of Rise of On–State Current
(IPK = 20 A; Pw = 10 µsec; diG/dt = 1.0 A/µsec, Igt = 20 mA)
di/dt
–
–
50
A/µs
DYNAMIC CHARACTERISTICS
*Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.
1. RGK = 1000 Ohms included in measurement.
2. Does not include RGK in measurement.
2
CR03AM
Voltage Current Characteristic of SCR
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak on State Voltage
IH
Holding Current
Anode +
VTM
on state
IH
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
100
1.0
90
0.9
GATE TRIGGER VOLTAGE (VOLTS)
GATE TRIGGER CURRENT ( m A)
Anode –
80
70
60
50
40
30
20
10
–40 –25 –10
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95
0.8
0.7
0.6
0.5
0.4
0.3
0.2
–40 –25 –10
5
20 35 50
65 80
TJ, JUNCTION TEMPERATURE (°C)
110
Figure 1. Typical Gate Trigger Current versus
Junction Temperature
95
110
Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature
3
CR03AM
1000
LATCHING CURRENT ( m A)
HOLDING CURRENT (m A)
1000
100
10
–40 –25 –10
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95
100
10
–40 –25 –10
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
110
120
110
100
90
DC
80
70
180°
60
50
40
30°
0
60°
90°
120°
0.1
0.2
0.3
0.4
IT(RMS), RMS ON-STATE CURRENT (AMPS)
110
Figure 4. Typical Latching Current versus
Junction Temperature
0.5
I T, INSTANTANEOUS ON-STATE CURRENT (AMPS)
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)
Figure 3. Typical Holding Current versus
Junction Temperature
95
Figure 5. Typical RMS Current Derating
10
MAXIMUM @ TJ = 25°C
MAXIMUM @ TJ = 110°C
1
0.1
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 6. Typical On–State Characteristics
4
Similar pages