NCR169D A Advance Information General Purpose STC CR03AM Sensitive Gate Silicon Controlled Rectifier SCR 0.8 AMPERES RMS 600 VOLTS Reverse Blocking Thyristor PNPN device designed for line-powered general purpose applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in a cost effective plastic TO-92 package. • Sensitive Gate Allows Direct Triggering by Microcontrollers and Other Logic Circuits • On–State Current Rating of 0.8 Amperes RMS at 80°C • Surge Current Capability – 10 Amperes • Immunity to dV/dt – 20 V/µsec Minimum at 110°C • Glass-Passivated Surface for Reliability and Uniformity • Blocking Voltage to 600 Volts G A 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off–State Voltage (Note 1.) (TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open) VDRM, VRRM 600 Volts On-State RMS Current (TC = 80°C) 180° Conduction Angles IT(RMS) 0.8 Amp ITSM 10 Amps I2t 0.415 A2s PGM 0.1 Watt PG(AV) 0.10 Watt Forward Peak Gate Current (TA = 25°C, Pulse Width v 1.0 µs) IGM 1.0 Amp Reverse Peak Gate Voltage (TA = 25°C, Pulse Width v 1.0 µs) VGRM 5.0 Volts Operating Junction Temperature Range @ Rate VRRM and VDRM TJ –40 to 110 °C Storage Temperature Range Tstg –40 to 150 °C Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C) Circuit Fusing Consideration (t = 10 ms) Forward Peak Gate Power (TA = 25°C, Pulse Width v 1.0 µs) Forward Average Gate Power (TA = 25°C, t = 20 ms) K 2 3 TO−92 (TO−226) CASE 029 STYLE 10 PIN ASSIGNMENT 14 Cathode 2 Anode 3 Gate (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant source such that the voltage ratings of the devices are exceeded. © Semiconductor Components Industries, LLC, 2000 December, 2000 – Rev. 0 1 Publication Order Number: NCR169D/D CR03AM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RθJC RθJA 75 200 °C/W TL 260 °C Thermal Resistance – Junction to Case – Junction to Ambient Lead Solder Temperature (t1/16″ from case, 10 secs max) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit – – – – 10 0.1 µA mA VTM – – 1.7 Volts OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (Note 1.) (VD = Rated VDRM and VRRM; RGK = 1.0 kΩ) IDRM, IRRM TC = 25°C TC = 110°C ON CHARACTERISTICS Peak Forward On–State Voltage(*) (ITM = 1.0 Amp Peak @ TA = 25°C) Gate Trigger Current (Continuous dc) (Note 2.) (VAK = 12 V, RL = 100 Ohms) TC = 25°C IGT – 6 8 µA Holding Current (Note 2.) (VAK = 12 V, IGT = 0.5 mA) TC = 25°C TC = –40°C IH – – 0.5 – 5.0 10 mA Latch Current (VAK = 12 V, IGT = 0.5 mA, RGK = 1.0 k) TC = 25°C TC = –40°C IL – – 0.6 – 10 15 mA Gate Trigger Voltage (Continuous dc) (Note 2.) (VAK = 12 V, RL = 100 Ohms, IGT = 10 mA) TC = 25°C TC = –40°C VGT – – 0.62 – 0.8 1.2 Volts Critical Rate of Rise of Off–State Voltage (VD = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms, TJ = 110°C) dV/dt 20 35 – V/µs Critical Rate of Rise of On–State Current (IPK = 20 A; Pw = 10 µsec; diG/dt = 1.0 A/µsec, Igt = 20 mA) di/dt – – 50 A/µs DYNAMIC CHARACTERISTICS *Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%. 1. RGK = 1000 Ohms included in measurement. 2. Does not include RGK in measurement. 2 CR03AM Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak on State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) 100 1.0 90 0.9 GATE TRIGGER VOLTAGE (VOLTS) GATE TRIGGER CURRENT ( m A) Anode – 80 70 60 50 40 30 20 10 –40 –25 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 0.8 0.7 0.6 0.5 0.4 0.3 0.2 –40 –25 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 110 Figure 1. Typical Gate Trigger Current versus Junction Temperature 95 110 Figure 2. Typical Gate Trigger Voltage versus Junction Temperature 3 CR03AM 1000 LATCHING CURRENT ( m A) HOLDING CURRENT (m A) 1000 100 10 –40 –25 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 100 10 –40 –25 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 110 120 110 100 90 DC 80 70 180° 60 50 40 30° 0 60° 90° 120° 0.1 0.2 0.3 0.4 IT(RMS), RMS ON-STATE CURRENT (AMPS) 110 Figure 4. Typical Latching Current versus Junction Temperature 0.5 I T, INSTANTANEOUS ON-STATE CURRENT (AMPS) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) Figure 3. Typical Holding Current versus Junction Temperature 95 Figure 5. Typical RMS Current Derating 10 MAXIMUM @ TJ = 25°C MAXIMUM @ TJ = 110°C 1 0.1 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 6. Typical On–State Characteristics 4