CJ2301S SOT-23 Plastic-Encapsulate MOSFETS CJ2301S P-Channel 20-V(D-S) MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ=150℃) ID -2.3 Pulsed Drain Current IDM -10 Continuous Source-Drain Diode Current IS -0.72 Maximum Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient(t ≤ 5s) ℃/W Rθ JA 357 Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 [email protected] www.zpsemi.com Unit V A ℃ 1 of 3 CJ2301S Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -20 Gate-source threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.4 -1 V Gate-source leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =-20V, VGS =0V -1 µA Drain-source on-state resistance a Forward transconductance RDS(on) a gfs VGS =-4.5V, ID =-2.8A 0.090 0.112 VGS =-2.5V, ID =-2.0A 0.110 0.142 VDS =-5V, ID =-2.8A 4.0 Ω S b Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf 405 VDS =-10V,VGS =0V,f =1MHz pF 75 55 VDS =-10V,VGS =-4.5V,ID =-3A VDS =-10V,VGS =-2.5V,ID =-3A 5.5 10 3.3 6 0.7 nC 1.3 f =1MHz VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V,Rg=1Ω 6.0 Ω 11 20 35 60 30 50 10 20 ns Drain-source body diode characteristics Continuous source-drain diode current Pulse diode forward current Body diode voltage a IS -1.3 TC=25℃ -10 ISM VSD A IS=-0.7A -0.8 -1.2 V Notes : a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.Guaranteed by design, not subject to production testing. [email protected] www.zpsemi.com 2 of 3 CJ2301S Output Characteristics -10 Transfer Characteristics -10 VGS= -4.5V,-3.5V,-2.5V Ta=25℃ Ta=25℃ Pulsed Pulsed -8 -8 (A) VGS=-1.5V ID -4 -6 DRAIN CURRENT ID -6 DRAIN CURRENT (A) VGS=-2.0V -4 -2 -0 -2 VGS=-1.0V -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE RDS(ON) 150 —— VDS -0 -0.0 -4 (V) -0.5 -1.0 -1.5 GATE TO SOURCE VOLTAGE ID RDS(ON) 250 Ta=25℃ —— -2.0 VGS -2.5 (V) VGS Ta=25℃ Pulsed Pulsed 200 (mΩ) 90 VGS=-4.5V 60 30 -0 -2 -4 -6 DRAIN CURRENT -10 -3 RDS(ON) VGS=-2.5V ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) 120 IS —— ID -8 -10 150 100 ID=-2.8A 50 0 -0 (A) -2 -4 GATE TO SOURCE VOLTAGE -6 VGS -8 (V) VSD Ta=25℃ Pulsed SOURCE CURRENT IS (A) -1 -0.3 -0.1 -0.03 -0.01 -3E-3 -1E-3 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE [email protected] -1.0 VSD -1.2 (V) www.zpsemi.com 3 of 3