PHILIPS BFG590W Npn 5 ghz wideband transistor Datasheet

DATA SHEET
book, halfpage
M3D123
BFG590W; BFG590W/X
NPN 5 GHz wideband transistors
Product specification
Supersedes data of August 1995
1998 Oct 15
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
FEATURES
DESCRIPTION
• High power gain
NPN silicon planar epitaxial transistor
in a 4-pin dual-emitter SOT343N
plastic package.
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
DESCRIPTION
BFG590W
• MATV/CATV amplifiers and RF
communications subscriber
equipment in the GHz range
• Ideally suitable for use in class-A,
(A)B and C amplifiers with either
pulsed or continuous drive.
4
3
1
2
PINNING
PIN
APPLICATIONS
page
Top view
1
collector
2
base
3
emitter
4
emitter
MBK523
Fig.1 SOT343N.
BFG590W/X
MARKING
1
collector
2
emitter
TYPE NUMBER
3
base
BFG590W
T1
4
emitter
BFG590W/X
T2
CODE
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
−
−
20
V
−
−
15
V
VCBO
collector-base voltage
VCEO
collector-emitter voltage open base
IC
collector current (DC)
−
−
200
mA
Ptot
total power dissipation
Ts ≤ 85 °C
−
−
500
mW
hFE
DC current gain
IC = 70 mA; VCE = 8 V
60
90
250
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
−
0.7
−
pF
fT
transition frequency
IC = 80 mA; VCE = 4 V; f = 1 GHz; Tamb = 25 °C
−
5
−
GHz
GUM
maximum unilateral
power gain
IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 °C −
13
−
dB
|S21|2
insertion power gain
IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 °C −
11
−
dB
1998 Oct 15
open emitter
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
200
mA
Ptot
total power dissipation
Ts ≤ 85 °C; see Fig.2; note 1
−
500
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
Ts ≤ 85 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
MBG248
600
handbook, halfpage
P tot
(mW)
400
200
0
0
50
100
150
T s (o C)
200
Fig.2 Power derating curve.
1998 Oct 15
3
VALUE
UNIT
180
K/W
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
−
MAX.
UNIT
−
V
V(BR)CBO
collector-base breakdown voltage
IC = 0.1 mA; IE = 0
20
V(BR)CEO
collector-emitter breakdown voltage IC = 10 mA; IB = 0
15
−
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 0.1 mA; IC = 0
3
−
−
V
ICBO
collector leakage current
VCB = 10 V; IE = 0
−
−
100
nA
hFE
DC current gain
IC = 70 mA; VCE = 8 V
60
90
250
fT
transition frequency
IC = 80 mA; VCE = 4 V; f = 1 GHz;
Tamb = 25 °C
−
5
−
GHz
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
−
0.7
−
pF
GUM
maximum unilateral power gain;
note 1
IC = 80 mA; VCE = 4 V; f = 900 MHz; −
Tamb = 25 °C
13
−
dB
IC = 80 mA; VCE = 4 V; f = 2 GHz;
Tamb = 25 °C
−
7.5
−
dB
|S21|2
insertion power gain
IC = 80 mA; VCE = 4 V; f = 1 GHz;
Tamb = 25 °C
−
11
−
dB
PL1
output power at 1 dB gain
compression
IC = 80 mA; VCE = 5 V; f = 900 MHz; −
RL = 50 Ω; Tamb = 25 °C
21
−
dBm
Note
S 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming S12 is zero. G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 )
1998 Oct 15
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
MRA749
250
MLC057
1.2
handbook, halfpage
handbook, halfpage
hFE
C re
(pF)
200
0.8
150
100
0.4
50
0
10−2
10−1
1
10
IC (mA)
0
102
0
4
6
8
10
VCB (V)
IC = 0; f = 1 MHz.
VCE = 8 V.
Fig.3
2
DC current gain as a function of collector
current; typical values.
Fig.4
MLC058
8
handbook, halfpage
fT
(GHz)
6
4
2
0
10
I C (mA)
102
VCE = 4 V; f = 1 GHz.
Fig.5
1998 Oct 15
Transition frequency as a function of
collector current; typical values.
5
Feedback capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
MLC059
30
MLC060
12
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
20
G max
8
G UM
G max
G UM
10
4
0
0
0
20
40
100
80
I C (mA)
60
0
f = 900 MHz; VCE = 4 V.
Fig.6
Gain as a function of collector current;
typical values.
Fig.7
MLC061
50
100
80
I C (mA)
60
Gain as a function of collector current;
typical values.
MLC062
50
handbook, halfpage
gain
40
40
f = 2 GHz; VCE = 4 V.
handbook, halfpage
(dB)
20
gain
(dB)
G UM
40
G UM
MSG
MSG
30
30
20
20
10
10
G max
0
G max
0
10
10
2
10
3
f (MHz)
10
4
10
10
IC = 20 mA; VCE = 4 V.
IC = 80 mA; VCE = 4 V.
Fig.8
Fig.9
1998 Oct 15
Gain as a function of frequency;
typical values.
6
2
10
3
f (MHz)
10
Gain as a function of frequency;
typical values.
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
90 o
handbook, full pagewidth
1.0
1
135 o
45 o
2
0.5
0.8
0.6
3 GHz
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
5
0.2
40 MHz
0.5
2
135 o
45 o
1
MLC063
1.0
90 o
IC = 80 mA; VCE = 4 V; Zo = 50 Ω.
Fig.10 Common emitter input reflection coefficient (S11); typical values.
90 o
handbook, full pagewidth
135 o
45 o
40 MHz
180
3 GHz
o
50
40
30
20
0
10
135 o
o
45 o
90 o
MLC064
IC = 80 mA; VCE = 4 V.
Fig.11 Common emitter forward transmission coefficient (S21); typical values.
1998 Oct 15
7
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
90 o
handbook, full pagewidth
3 GHz
135 o
180 o
0.5
0.4
45 o
0.3
0.2
0.1
40 MHz
0o
135 o
45 o
90 o
MLC065
IC = 80 mA; VCE = 4 V.
Fig.12 Common emitter reverse transmission coefficient (S12); typical values.
90 o
handbook, full pagewidth
1.0
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
3 GHz
40 MHz
0.2
0.5
2
135 o
5
45 o
1
MLC066
1.0
90 o
IC = 80 mA; VCE = 4 V; Zo = 50 Ω.
Fig.13 Common emitter output reflection coefficient (S22); typical values.
1998 Oct 15
8
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
SPICE parameters for the BFG590W die
SEQUENCE No.
PARAMETER
VALUE
SEQUENCE No.
UNIT
PARAMETER
VALUE
(1)
UNIT
1
IS
1.341
fA
36
VJS
750.0
mV
2
BF
123.5
−
37 (1)
MJS
0.000
−
3
NF
0.988
−
38
FC
0.733
−
4
VAF
75.85
V
Note
5
IKF
9.656
A
6
ISE
232.2
fA
1. These parameters have not been extracted, the
default values are shown.
7
NE
2.134
−
8
BR
10.22
−
9
NR
1.016
−
10
VAR
1.992
V
11
IKR
294.1
mA
12
ISC
211.0
aA
13
NC
0.997
−
14
RB
5.000
Ω
15
IRB
1.000
µA
16
RBM
5.000
Ω
17
RE
1.275
Ω
18
RC
920.6
mΩ
C cb
handbook, halfpage
L1
LB
B
L2
B'
C be
C'
E'
C
Cce
LE
MBC964
L3
XTB
0.000
−
(1)
EG
1.110
eV
21 (1)
XTI
3.000
−
22
CJE
3.821
pF
23
VJE
600.0
mV
24
MJE
0.348
−
25
TF
13.60
ps
26
XTF
71.73
−
27
VTF
10.28
V
28
ITF
1.929
A
Cbe
70
fF
29
PTF
0.000
deg
Ccb
50
fF
30
CJC
1.409
pF
Cce
115
fF
31
VJC
219.4
mV
L1
0.34
nH
32
MJC
0.166
−
L2
0.10
nH
33
XCJC
0.150
−
L3
0.25
nH
34
TR
2.340
ns
LB
0.40
nH
35 (1)
CJS
0.000
F
LE
0.40
nH
19 (1)
20
1998 Oct 15
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc)
fc = scaling frequency = 1 GHz.
Fig.14 Package equivalent circuit SOT343N.
List of components (see Fig.14)
DESIGNATION
9
VALUE
UNIT
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT343N
D
E
B
A
X
HE
y
v M A
e
4
3
Q
A
A1
c
1
2
b1
bp
w M B
Lp
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
SOT343N
1998 Oct 15
EUROPEAN
PROJECTION
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Oct 15
11
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Date of release: 1998 Oct 15
Document order number:
9397 750 04347