Jiangsu BC857BV Dual transistor (pnppnp) Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
BC857BV
SOT-563 Plastic-Encapsulate Transistors
DUAL TRANSISTOR (PNP+PNP)
SOT-563
FEATURES
Epitaxial Die Construction
z
Complementary NPN Types Available
z
(BC847BV)
z
Ultra-Small Surface Mount Package
Marking: K5V
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.1
A
PC
Collector Power Dissipation
0.15
W
RθJA
Thermal Resistance from Junction to Ambient
833
℃/W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55 to +150
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
M in
Typ
Unit
Max
Collector-base breakdown voltage
V(BR)CBO
IC=-10μA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA,IB=0
-45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-1μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-30V,IE=0
DC current gain
hFE
VCE=-5V,IC=-2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
220
nA
475
VCE(sat)(1)
IC=-10mA,IB=-0.5mA
-0.1
V
VCE(sat)(2)
IC=-100mA,IB=-5mA
-0.4
V
VBE(sat)(1)
IC=-10mA,IB=-0.5mA
-0.7
V
VBE(sat)(2)
IC=-100mA,IB=-5mA
-0.9
V
VBE(1)
VCE=-5V,IC=-2mA
VBE(2)
VCE=-5V,IC=-10mA
fT
Collector output capacitance
Cob
Noise figure
NF
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-15
VCE=-5V,IC=-10mA,f=100MHz
VCB=-10V,IE=0,f=1MHz
VCE=-5V,Ic=-0.2mA,
f=1kHZ,Rs=2KΩ,BW=200Hz
1
-0.6
-0.75
V
-0.82
V
MHz
100
4.5
pF
10
dB
C,Jul,2015
Typical Characteristics
hFE
Static Characteristic
-8
COMMON
EMITTER
Ta=25℃
Ta=100℃
-27uA
-6
IC
-24uA
hFE
(mA)
-30uA
-21uA
DC CURRENT GAIN
COLLECTOR CURRENT
—— IC
1000
-18uA
-4
-15uA
-12uA
-9uA
-2
Ta=25℃
100
-6uA
COMMON EMITTER
VCE= -5V
IB=-3uA
-0
-0
-2
-4
-6
COLLECTOR-EMITTER VOLTAGE
VCEsat
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
-1
——
VCE
10
-0.1
-8
-1
(V)
-10
COLLECTOR CURRENT
IC
VBEsat
——
IC
-100
(mA)
IC
-2
-1
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
Ta=25℃
-0.1
Ta=100℃
Ta=25℃
Ta=100℃
β=20
β=20
-0.01
-0.1
-1
-10
COLLECTOR CURRENT
IC
IC
-0.1
-0.1
-100
(mA)
—— VBE
fT
IC
-100
(mA)
IC
——
(MHz)
500
(mA)
Ta=100℃
fT
-10
TRANSITION FREQUENCY
IC
COLLECTOR CURRENT
-10
COLLECTOR CURRENT
-100
Ta=25℃
-1
COMMON EMITTER
VCE=-5V
-0.1
-0.0
-1
-0.3
-0.6
-0.9
100
COMMON EMITTER
VCE=-5V
Ta=25℃
10
-0.1
-1.2
-1
BASE-EMMITER VOLTAGE VBE (V)
Cob/ Cib
-10
COLLECTOR CURRENT
—— VCB/ VEB
PC
200
30
——
IC
-100
(mA)
Ta
f=1MHz
IE=0/IC=0
COLLECTOR POWER DISSIPATION
PC (mW)
10
Cib
C
(pF)
Ta=25 ℃
CAPACITANCE
Cob
1
-0.1
-1
REVERSE VOLTAGE
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-10
VR
150
100
50
0
-20
0
(V)
25
50
75
AMBIENT TEMPERATURE
2
100
Ta
125
150
(℃ )
C,Jul,2015
SOT-563 Package Outline Dimensions
SOT-563 Suggested Pad Layout
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3
C,Jul,2015
SOT-563 Tape and Reel
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4
C,Jul,2015
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