JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T BC857BV SOT-563 Plastic-Encapsulate Transistors DUAL TRANSISTOR (PNP+PNP) SOT-563 FEATURES Epitaxial Die Construction z Complementary NPN Types Available z (BC847BV) z Ultra-Small Surface Mount Package Marking: K5V MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.15 W RθJA Thermal Resistance from Junction to Ambient 833 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions M in Typ Unit Max Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-1μA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 DC current gain hFE VCE=-5V,IC=-2mA Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency 220 nA 475 VCE(sat)(1) IC=-10mA,IB=-0.5mA -0.1 V VCE(sat)(2) IC=-100mA,IB=-5mA -0.4 V VBE(sat)(1) IC=-10mA,IB=-0.5mA -0.7 V VBE(sat)(2) IC=-100mA,IB=-5mA -0.9 V VBE(1) VCE=-5V,IC=-2mA VBE(2) VCE=-5V,IC=-10mA fT Collector output capacitance Cob Noise figure NF www.cj-elec.com -15 VCE=-5V,IC=-10mA,f=100MHz VCB=-10V,IE=0,f=1MHz VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2KΩ,BW=200Hz 1 -0.6 -0.75 V -0.82 V MHz 100 4.5 pF 10 dB C,Jul,2015 Typical Characteristics hFE Static Characteristic -8 COMMON EMITTER Ta=25℃ Ta=100℃ -27uA -6 IC -24uA hFE (mA) -30uA -21uA DC CURRENT GAIN COLLECTOR CURRENT —— IC 1000 -18uA -4 -15uA -12uA -9uA -2 Ta=25℃ 100 -6uA COMMON EMITTER VCE= -5V IB=-3uA -0 -0 -2 -4 -6 COLLECTOR-EMITTER VOLTAGE VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -1 —— VCE 10 -0.1 -8 -1 (V) -10 COLLECTOR CURRENT IC VBEsat —— IC -100 (mA) IC -2 -1 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25℃ -0.1 Ta=100℃ Ta=25℃ Ta=100℃ β=20 β=20 -0.01 -0.1 -1 -10 COLLECTOR CURRENT IC IC -0.1 -0.1 -100 (mA) —— VBE fT IC -100 (mA) IC —— (MHz) 500 (mA) Ta=100℃ fT -10 TRANSITION FREQUENCY IC COLLECTOR CURRENT -10 COLLECTOR CURRENT -100 Ta=25℃ -1 COMMON EMITTER VCE=-5V -0.1 -0.0 -1 -0.3 -0.6 -0.9 100 COMMON EMITTER VCE=-5V Ta=25℃ 10 -0.1 -1.2 -1 BASE-EMMITER VOLTAGE VBE (V) Cob/ Cib -10 COLLECTOR CURRENT —— VCB/ VEB PC 200 30 —— IC -100 (mA) Ta f=1MHz IE=0/IC=0 COLLECTOR POWER DISSIPATION PC (mW) 10 Cib C (pF) Ta=25 ℃ CAPACITANCE Cob 1 -0.1 -1 REVERSE VOLTAGE www.cj-elec.com -10 VR 150 100 50 0 -20 0 (V) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) C,Jul,2015 SOT-563 Package Outline Dimensions SOT-563 Suggested Pad Layout www.cj-elec.com 3 C,Jul,2015 SOT-563 Tape and Reel www.cj-elec.com 4 C,Jul,2015