ATMEL AT24HC02B Two-wire serial eeprom 2k (256 x 8) Datasheet

1. Features
• Write Protect Pin for Hardware Data Protection
– Utilizes Different Array Protection Compared to the AT24C02B
• Low-voltage and Standard-voltage Operation
– 1.8 (VCC = 1.8V to 5.5V)
Internally Organized 256 x 8 (2K)
Two-wire Serial Interface
Schmitt Trigger, Filtered Inputs for Noise Suppression
Bidirectional Data Transfer Protocol
1 MHz (5V) and 400 kHz (1.8V, 2.5V, 2.7V) Clock Rate
8-byte Page
Partial Page Writes Allowed
Self-timed Write Cycle (5 ms Max)
High Reliability
– Endurance: One Million Write Cycles
– Data Retention: 100 Years
• 8-lead PDIP, 8-lead JEDEC SOIC and 8-lead TSSOP Packages
• Die Sales: Wafer Form, Tape and Reel, and Bumped Wafers
•
•
•
•
•
•
•
•
•
Two-wire Serial
EEPROM
2K (256 x 8)
AT24HC02B
2. Description
The AT24HC02B provides 2048 bits of serial electrically erasable and programmable
read-only memory (EEPROM) organized as 256 words of 8 bits each. The device is
optimized for use in many industrial and commercial applications where low-power
and low-voltage operation are essential. The AT24HC02B is available in space-saving
8-lead PDIP, 8-lead JEDEC SOIC and 8-lead TSSOP packages and is accessed via a
two-wire serial interface. In addition, the entire family is available in 1.8V (1.8V to
5.5V) version.
Table 2-1.
Pin Configuration
Pin Name
Function
A0–A2
Address Inputs
SDA
Serial Data
SCL
Serial Clock Input
WP
Write Protect
8-lead TSSOP
A0
A1
A2
GND
1
2
3
4
8
7
6
5
VCC
WP
SCL
SDA
8-lead PDIP
A0
A1
A2
GND
1
2
3
4
8
7
6
5
VCC
WP
SCL
SDA
8-lead SOIC
A0
A1
A2
GND
1
2
3
4
8
7
6
5
VCC
WP
SCL
SDA
Rev. 5134E–SEEPR–3/08
Absolute Maximum Ratings*
*NOTICE:
Operating Temperature......................................−55°C to +125°C
Storage Temperature .........................................−65°C to +150°C
Voltage on Any Pin
with Respect to Ground ........................................ −1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
DC Output Current........................................................ 5.0 mA
Figure 2-1.
Block Diagram
VCC
GND
WP
START
STOP
LOGIC
SERIAL
CONTROL
LOGIC
LOAD
DEVICE
ADDRESS
COMPARATOR
A2
A1
A0
R/W
EN
H.V. PUMP/TIMING
COMP
LOAD
DATA RECOVERY
INC
DATA WORD
ADDR/COUNTER
Y DEC
X DEC
SCL
SDA
EEPROM
SERIAL MUX
DOUT/ACK
LOGIC
DIN
DOUT
2
AT24HC02B
5134E–SEEPR–3/08
AT24HC02B
3. Pin Description
SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each EEPROM
device and negative edge clock data out of each device.
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is opendrain driven and may be wire-ORed with any number of other open-drain or open collector
devices.
DEVICE/PAGE ADDRESSES (A2, A1, A0): The A2, A1 and A0 pins are device address inputs
that must be hardwired for the AT24HC02B. As many as eight 2K devices may be addressed on
a single bus system. (Device addressing is discussed in detail under Device Addressing, page
8).
WRITE PROTECT (WP): The AT24HC02B has a WP pin that provides hardware data protection. The WP pin allows normal read/write operations when connected to ground (GND). When
the WP pin is connected to VCC, the write protection feature is enabled and operates as shown.
Table 3-1.
Write Protect
Part of the Array Protected
WP Pin Status
24HC02B
At VCC
Upper Half (1K) Array
At GND
Normal Read/Write Operations
3
5134E–SEEPR–3/08
4. Memory Organization
AT24HC02B, 2K SERIAL EEPROM: The 2K is internally organized with 32 pages of 8 bytes
each. Random word addressing requires an 8-bit data word address.
Table 4-1.
Pin Capacitance(1)
Applicable over recommended operating range from TAI = 25°C, f = 1.0 MHz, VCC = +1.8V
Symbol
Test Condition
CI/O
CIN
Note:
Max
Units
Conditions
Input/Output Capacitance (SDA)
8
pF
VI/O = 0V
Input Capacitance (A0, A1, A2, SCL)
6
pF
VIN = 0V
1. This parameter is characterized and is not 100% tested.
Table 4-2.
DC Characteristics
Applicable over recommended operating range from: TAI = −40°C to +85°C, VCC = +1.8V to +5.5V (unless otherwise noted)
Symbol
Parameter
VCC1
Supply Voltage
VCC2
Test Condition
Max
Units
1.8
5.5
V
Supply Voltage
2.5
5.5
V
VCC3
Supply Voltage
2.7
5.5
V
VCC4
Supply Voltage
4.5
5.5
V
ICC
Supply Current VCC = 5.0V
READ at 100 kHz
0.4
1.0
mA
ICC
Supply Current VCC = 5.0V
WRITE at 100 kHz
2.0
3.0
mA
ISB1
Standby Current VCC = 1.8V
VIN = VCC or VSS
0.6
3.0
µA
ISB2
Standby Current VCC = 2.5V
VIN = VCC or VSS
1.4
4.0
µA
ISB3
Standby Current VCC = 2.7V
VIN = VCC or VSS
1.6
4.0
µA
ISB4
Standby Current VCC = 5.0V
VIN = VCC or VSS
8.0
18.0
µA
ILI
Input Leakage Current
VIN = VCC or VSS
0.10
3.0
µA
ILO
Output Leakage Current
VOUT = VCC or VSS
0.05
3.0
µA
VIL
Input Low Level (1)
−0.6
VCC x 0.3
V
VCC x 0.7
VCC + 0.5
V
(1)
Min
Typ
VIH
Input High Level
VOL2
Output Low Level VCC = 3.0V
IOL = 2.1 mA
0.4
V
VOL1
Output Low Level VCC = 1.8V
IOL = 0.15 mA
0.2
V
Note:
4
1. VIL min and VIH max are reference only and are not tested.
AT24HC02B
5134E–SEEPR–3/08
AT24HC02B
Table 4-3.
AC Characteristics
Applicable over recommended operating range from TAI = –40°C to +85°C, VCC = +1.8V to +5.5V, CL = 1 TTL Gate and
100 pF (unless otherwise noted)
1.8, 2.5, 2.7
Min
5.0-volt
Symbol
Parameter
Max
Min
fSCL
Clock Frequency, SCL
tLOW
Clock Pulse Width Low
1.2
0.4
µs
tHIGH
Clock Pulse Width High
0.6
0.4
µs
tI
Noise Suppression Time
tAA
Clock Low to Data Out Valid
0.1
tBUF
Time the bus must be free before a new
transmission can start
1.2
0.5
µs
tHD.STA
Start Hold Time
0.6
0.25
µs
tSU.STA
Start Setup Time
0.6
0.25
µs
tHD.DAT
Data In Hold Time
0
0
µs
tSU.DAT
Data In Setup Time
100
100
ns
tR
Inputs Rise Time(1)
400
50
(1)
0.9
0.05
Max
Units
1000
kHz
40
ns
0.55
µs
0.3
0.3
µs
300
100
ns
tF
Inputs Fall Time
tSU.STO
Stop Setup Time
0.6
.25
µs
tDH
Data Out Hold Time
50
50
ns
tWR
Write Cycle Time
Endurance(1)
Note:
5.0V, 25°C, Byte Mode
5
5
1 Million
ms
Write Cycles
1. This parameter is ensured by characterization only.
5
5134E–SEEPR–3/08
5. Device Operation
CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external
device. Data on the SDA pin may change only during SCL low time periods (see Figure 5-1).
Data changes during SCL high periods will indicate a start or stop condition as defined below.
Figure 5-1.
Data Validity
SDA
SCL
DATA STABLE
DATA STABLE
DATA
CHANGE
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition that must
precede any other command (see Figure 5-2).
Figure 5-2.
Start and Stop Definition
SDA
SCL
START
STOP
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a
read sequence, the stop command will place the EEPROM in a standby power mode (see Figure 5-2).
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the
EEPROM in 8-bit words.. The EEPROM sends a “0” to acknowledge that it has received each
word. This happens during the ninth clock cycle.
STANDBY MODE: The AT24HC02B features a low-power standby mode that is enabled: (a)
upon power-up and (b) after the receipt of the Stop bit and the completion of any internal
operations.
6
AT24HC02B
5134E–SEEPR–3/08
AT24HC02B
2-WIRE SOFTWARE RESET: After an interruption in protocol, power loss or system reset, any
two-wire part can be reset by following these steps: (a) Clock up to 9 cycles, (b) Look for SDA
high in each cycle while SCL is high, (c) Create a start condition as SDA is high. The device is
ready for next communication after above steps have been completed.
Figure 5-3.
Software Reset
Dummy Clock Cycles
Start bit
SCL
1
2
Start bit
3
8
Stop bit
9
SDA
Figure 5-4.
Bus Timing
tHIGH
tF
tR
tLOW
SCL
tSU.STA
tLOW
tHD.STA
tHD.DAT
tSU.DAT
tSU.STO
SDA IN
tAA
tDH
tBUF
SDA OUT
Figure 5-5.
Write Cycle Timing
SCL
SDA
8th BIT
ACK
WORDn
(1)
twr
STOP
CONDITION
Notes:
START
CONDITION
1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.
7
5134E–SEEPR–3/08
Figure 5-6.
Output Acknowledge
1
SCL
8
9
DATA IN
DATA OUT
START
ACKNOWLEDGE
6. Device Addressing
The 2K EEPROM device requires an 8-bit device address word following a start condition to
enable the chip for a read or write operation, as shown in Figure 6-1.
Figure 6-1.
Device Address
2K
1
MSB
0
1
0
A2 A1 A0 R/W
LSB
The device address word consists of a mandatory “1”, “0” sequence for the first four most significant bits as shown. This is common to all the EEPROM devices.
The next three bits are the A2, A1 and A0 device address bits for the 2K EEPROM. These three
bits must compare to their corresponding hardwired input pins.
The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high, and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a “0”. If a compare is not made,
the chip will return to a standby state.
8
AT24HC02B
5134E–SEEPR–3/08
AT24HC02B
7. Write Operations
BYTE WRITE: A write operation requires an 8-bit data word address following the device
address word and acknowledgement. Upon receipt of this address, the EEPROM will again
respond with a “0” and then clock in the first 8-bit data word. Following receipt of the 8-bit data
word, the EEPROM will output a “0” and the addressing device, such as a microcontroller, must
terminate the write sequence with a stop condition. At this time, the EEPROM enters an internally-timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during this write
cycle, and the EEPROM will not respond until the write is complete, see Figure 7-1 on page 9.
Figure 7-1.
Byte Write
S
T
A
R
T
DEVICE
ADDRESS
W
R
I
T
E
WORD ADDRESS
S
T
O
P
DATA
SDA LINE
M
S
B
R A
/ C
W K
A
C
K
A
C
K
PAGE WRITE: The 2K EEPROM is capable of an 8-byte page write.
A page write is initiated the same as a byte write, but the microcontroller does not send a stop
condition after the first data word is clocked in. Instead, after the EEPROM acknowledges
receipt of the first data word, the microcontroller can transmit up to seven (2K) more data words.
The EEPROM will respond with a “0” after each data word received. The microcontroller must
terminate the page write sequence with a stop condition, see Figure 7-2.
Figure 7-2.
Page Write
S
T
A
R
T
DEVICE
ADDRESS
W
R
I
T
E WORD ADDRESS (n)
DATA (n)
DATA (n + 1)
S
T
O
P
DATA (n + x)
SDA LINE
M
S
B
R A
/ C
W K
A
C
K
A
C
K
A
C
K
A
C
K
The data word address lower three (2K) bits are internally incremented following the receipt of
each data word. The higher data word address bits are not incremented, retaining the memory
page row location. When the word address, internally generated, reaches the page boundary,
the following byte is placed at the beginning of the same page. If more than eight (2K) data
words are transmitted to the EEPROM, the data word address will “roll over” and previous data
will be overwritten.
ACKNOWLEDGE POLLING: Once the internally-timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a
start condition followed by the device address word. The read/write bit is representative of the
operation desired. Only if the internal write cycle has completed will the EEPROM respond with
a “0” allowing the read or write sequence to continue.
9
5134E–SEEPR–3/08
8. Read Operations
Read operations are initiated the same way as write operations with the exception that the
read/write select bit in the device address word is set to “1”. There are three read operations:
current address read, random address read and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the last
address accessed during the last read or write operation, incremented by one. This address
stays valid between operations as long as the chip power is maintained. The address “roll over”
during read is from the last byte of the last memory page to the first byte of the first page. The
address “roll over” during write is from the last byte of the current page to the first byte of the
same page.
Once the device address with the read/write select bit set to “1” is clocked in and acknowledged
by the EEPROM, the current address data word is serially clocked out. The microcontroller does
not respond with an input “0” but does generate a following stop condition, see Figure 8-1.
Figure 8-1.
Current Address Read
S
T
A
R
T
DEVICE
ADDRESS
R
E
A
D
S
T
O
P
SDA LINE
R A
/ C
W K
M
S
B
N
O
DATA
A
C
K
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data
word address. Once the device address word and data word address are clocked in and
acknowledged by the EEPROM, the microcontroller must generate another start condition. The
microcontroller now initiates a current address read by sending a device address with the
read/write select bit high. The EEPROM acknowledges the device address and serially clocks
out the data word. The microcontroller does not respond with a “0” but does generate a following
stop condition, see Figure 8-2.
Figure 8-2.
Random Read
S
T
A
R
T
DEVICE
ADDRESS
W
R
I
T
E
S
T
A
R
T
WORD
ADDRESS n
DEVICE
ADDRESS
R
E
A
D
S
T
O
P
SDA LINE
M
S
B
R A M
/ C S
W K B
A
C
K
M
S
B
A
C
K
DATA n
N
O
A
C
K
DUMMY WRITE
10
AT24HC02B
5134E–SEEPR–3/08
AT24HC02B
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a random address read. After the microcontroller receives a data word, it responds with an
acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment
the data word address and serially clock out sequential data words. When the memory address
limit is reached, the data word address will “roll over” and the sequential read will continue. The
sequential read operation is terminated when the microcontroller does not respond with a “0” but
does generate a following stop condition, see Figure 8-3.
Figure 8-3.
Sequential Read
11
5134E–SEEPR–3/08
9. AT24HC02B Ordering Information
Ordering Code
Voltage
Package
AT24HC02B-PU (Bulk form only)
1.8
8P3
AT24HC02BN-SH-B(1) (NiPdAu Lead Finish)
1.8
8S1
AT24HC02BN-SH-T(2) (NiPdAu Lead Finish)
1.8
8S1
(1)
(NiPdAu Lead Finish)
1.8
8A2
(2)
(NiPdAu Lead Finish)
1.8
8A2
1.8
Die Sale
AT24HC02B-TH-B
AT24HC02B-TH-T
AT24HC02B-W-11(3)
Notes:
Operation Range
Lead-free/Halogen-free/
Industrial Temperature
(−40°C to 85°C)
Industrial Temperature
(−40°C to 85°C)
1. “-B” denotes bulk.
2. “-T” denotes tape and reel. SOIC = 4K per reel. TSSOP = 5K per reel.
3. Available in tape and reel and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please
contact Serial Interface Marketing.
Package Type
8P3
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8A2
8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
Options
−1.8
12
Low Voltage (1.8V to 5.5V)
AT24HC02B
5134E–SEEPR–3/08
AT24HC02B
10. Part marking scheme
10.1
8-PDIP
TOP MARK
Seal Year
| Seal Week
|
|
|
|---|---|---|---|---|---|---|---|
A
T
M
L
H
Y
W
W
Y = SEAL YEAR
6: 2006
0: 2010
7: 2007
8: 2008
9: 2009
1: 2011
2: 2012
3: 2013
|---|---|---|---|---|---|---|---|
H
2
B
04 = Week 4
:: : :::: :
:: : :::: ::
50 = Week 50
1
52 = Week 52
|---|---|---|---|---|---|---|---|
*
Lot Number
|---|---|---|---|---|---|---|---|
|
Pin 1 Indicator (Dot)
10.2
WW = SEAL WEEK
02 = Week 2
Lot Number to Use ALL Characters in Marking
BOTTOM MARK
No Bottom Mark
8-SOIC
TOP MARK
Seal Year
| Seal Week
|
|
|
|---|---|---|---|---|---|---|---|
A
T
M
L
H
Y
W
W
Y = SEAL YEAR
6: 2006
0: 2010
7: 2007
8: 2008
9: 2009
1: 2011
2: 2012
3: 2013
|---|---|---|---|---|---|---|---|
H
2
B
|
Pin 1 Indicator (Dot)
04 = Week 4
:: : :::: :
:: : :::: ::
50 = Week 50
1
|---|---|---|---|---|---|---|---|
*
Lot Number
|---|---|---|---|---|---|---|---|
WW = SEAL WEEK
02 = Week 2
52 = Week 52
Lot Number to Use ALL Characters in Marking
BOTTOM MARK
No Bottom Mark
13
5134E–SEEPR–3/08
10.3
8-TSSOP
TOP MARK
Pin 1 Indicator (Dot)
|
|---|---|---|---|
*
H
Y
W
W
|---|---|---|---|---|
H
2
B
1
|---|---|---|---|---|
Y = SEAL YEAR
6:
7:
8:
9:
2006
2007
2008
2009
0:
1:
2:
3:
WW = SEAL WEEK
2010
2011
2012
2013
02
04
::
::
=
=
:
:
Week
Week
::::
::::
2
4
:
::
50 = Week 50
52 = Week 52
BOTTOM MARK
|---|---|---|---|---|---|---|
P
H
|---|---|---|---|---|---|---|
A
A
A
A
A
A
A
|---|---|---|---|---|---|---|
<- Pin 1 Indicator
14
AT24HC02B
5134E–SEEPR–3/08
AT24HC02B
11. Packaging Information
11.1
8P3 – PDIP
E
1
E1
N
Top View
c
eA
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
D
e
D1
A2 A
b2
b3
b
4 PLCS
Side View
L
SYMBOL
NOM
MAX
NOTE
2
A
–
–
0.210
A2
0.115
0.130
0.195
b
0.014
0.018
0.022
5
b2
0.045
0.060
0.070
6
b3
0.030
0.039
0.045
6
c
0.008
0.010
0.014
D
0.355
0.365
0.400
3
D1
0.005
–
–
3
E
0.300
0.310
0.325
4
E1
0.240
0.250
0.280
3
e
0.100 BSC
eA
0.300 BSC
L
Notes:
MIN
0.115
0.130
4
0.150
2
1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA, for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
01/09/02
R
2325 Orchard Parkway
San Jose, CA 95131
TITLE
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
DRAWING NO.
REV.
8P3
B
15
5134E–SEEPR–3/08
11.2
8S1 – JEDEC SOIC
C
1
E
E1
L
N
∅
Top View
End View
e
B
COMMON DIMENSIONS
(Unit of Measure = mm)
A
SYMBOL
A1
D
Side View
MIN
NOM
MAX
A
1.35
–
1.75
A1
0.10
–
0.25
b
0.31
–
0.51
C
0.17
–
0.25
D
4.80
–
5.00
E1
3.81
–
3.99
E
5.79
–
6.20
e
NOTE
1.27 BSC
L
0.40
–
1.27
∅
0°
–
8°
Note: These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
10/7/03
R
16
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
TITLE
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC)
DRAWING NO.
8S1
REV.
B
AT24HC02B
5134E–SEEPR–3/08
AT24HC02B
11.3
8A2 – TSSOP
3
2 1
Pin 1 indicator
this corner
E1
E
L1
N
L
Top View
End View
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
A
b
D
MIN
2.90
E
e
D
A2
NOTE
3.00
3.10
2, 5
3, 5
E1
4.30
4.40
4.50
A
–
–
1.20
A2
0.80
1.00
1.05
b
0.19
–
0.30
L
4
0.65 BSC
0.45
L1
Notes:
MAX
6.40 BSC
e
Side View
NOM
0.60
0.75
1.00 REF
1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
5/30/02
R
2325 Orchard Parkway
San Jose, CA 95131
TITLE
8A2, 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
DRAWING NO.
8A2
REV.
B
17
5134E–SEEPR–3/08
12. Revision History
18
Doc. Rev.
Date
Comments
5134E
3/2008
Added part marking scheme
Updated to new template
5134D
4/2007
Removed reference to Waffle Pack on page 1
Added lines to Ordering Code table
Shrink Pin Diagram; Change to Table 5; Added Two-Wire
Software Reset; Removed LSB from figures
5134C
3/2007
Pg. 12 - Change to new catalog part number scheme.
5134B
9/2006
Revision history implemented; Added ‘Preliminary’ status to
datasheet.
AT24HC02B
5134E–SEEPR–3/08
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5134E–SEEPR–3/08