FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET 60 V, 40 A, 6.3 mΩ Features Dual Cool TM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 17 A Max rDS(on) = 8.7 mΩ at VGS = 8 V, ID = 14.5 A High performance technology for extremely low rDS(on) RoHS Compliant Applications Primary DC-DC Switch Motor Bridge Switch Synchronous Rectifier Pin 1 S S S G D Top Power 33 D D D S D S D S D G D Bottom MOSFET Maximum Ratings TA= 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID PD TJ, TSTG Units V ±20 V 40 (Note 1a) -Pulsed EAS Ratings 60 17 A 80 Single Pulse Avalanche Energy (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 128 73 (Note 1a) Operating and Storage Junction Temperature Range 3.0 -55 to + 150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case (Top Source) 4.2 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 1.7 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 42 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 105 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 17 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 26 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 12 °C/W Package Marking and Ordering Information Device Marking 86520 Device FDMC86520DC ©2012 Fairchild Semiconductor Corporation FDMC86520DC Rev. C Package Dual CoolTM Power 33 1 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET September 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.5 V 60 V 30 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2.5 3.7 -10 mV/°C VGS = 10 V, ID = 17 A 5.1 6.3 VGS = 8 V, ID = 14.5 A 6.5 8.7 VGS = 10 V, ID = 17 A, TJ = 125°C 8.2 10.2 VDS = 10 V, ID = 17 A 49 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 30 V, VGS = 0 V, f = 1 MHz 0.1 2097 2790 pF 557 745 pF 13 40 pF 0.5 2.5 Ω ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time 18 33 VDD = 30 V, ID = 17 A, VGS = 10 V, RGEN = 6 Ω 6.6 14 ns 19 35 ns 4 10 ns 29 40 nC 23 33 tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge VGS = 0 V to 8 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 30 V, ID = 17 A nC 12 nC 5.5 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ©2012 Fairchild Semiconductor Corporation FDMC86520DC Rev. C VGS = 0 V, IS = 17 A (Note 2) 0.83 1.3 VGS = 0 V, IS = 2.5 A (Note 2) 0.74 1.2 IF = 17 A, di/dt = 100 A/μs 2 V 41 65 ns 23 37 nC www.fairchildsemi.com FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted RθJC Thermal Resistance, Junction to Case (Top Source) 4.2 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 1.7 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 42 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 105 RθJA Thermal Resistance, Junction to Ambient (Note 1c) 29 RθJA Thermal Resistance, Junction to Ambient (Note 1d) 40 RθJA Thermal Resistance, Junction to Ambient (Note 1e) 19 RθJA Thermal Resistance, Junction to Ambient (Note 1f) 23 RθJA Thermal Resistance, Junction to Ambient (Note 1g) 30 RθJA Thermal Resistance, Junction to Ambient (Note 1h) 79 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 17 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 26 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 12 RθJA Thermal Resistance, Junction to Ambient (Note 1l) 16 °C/W NOTES: 1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 105 °C/W when mounted on a minimum pad of 2 oz copper a. 42 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 128 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 16 A, VDD = 54 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 24 A. ©2012 Fairchild Semiconductor Corporation FDMC86520DC Rev. C 3 www.fairchildsemi.com FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET Thermal Characteristics 5 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 80 VGS = 7 V VGS = 8 V 60 VGS = 6.5 V 40 20 VGS = 6 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 6 V 4 VGS = 6.5 V 3 VGS = 7 V 2 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 5 VGS = 8 V 0 20 Figure 1. On-Region Characteristics 60 80 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 25 ID = 17 A VGS = 10 V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 40 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 20 ID = 17 A 15 TJ = 125 oC 10 TJ = 25 oC 5 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage 80 IS, REVERSE DRAIN CURRENT (A) 100 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 VDS = 5 V 40 TJ = 150 oC TJ = 25 oC 20 TJ = -55 oC 0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 10 V 3 4 5 6 7 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 8 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2012 Fairchild Semiconductor Corporation FDMC86520DC Rev. C 4 1.2 www.fairchildsemi.com FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10000 VDD = 30 V ID = 17 A Ciss 8 VDD = 20 V VDD = 40 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 4 1000 2 Coss 100 10 f = 1 MHz VGS = 0 V 0 0 5 10 15 20 25 30 Figure 7. Gate Charge Characteristics 60 90 ID, DRAIN CURRENT (A) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 1 0.01 0.1 VGS = 10 V 60 VGS = 8 V 30 o Limited by Package 1 10 0 25 100 50 RθJC = 1.7 C/W 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 300 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 100 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 1 Crss 1 0.1 THIS AREA IS LIMITED BY rDS(on) 0.1 0.01 0.01 1 ms 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 105 oC/W 10 s TA = 25 oC DC 0.1 1 10 100 300 VDS, DRAIN to SOURCE VOLTAGE (V) 100 TA = 25 oC 10 1 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMC86520DC Rev. C SINGLE PULSE RθJA = 105 oC/W Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 105 C/W 0.01 0.003 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMC86520DC Rev. C 6 www.fairchildsemi.com FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMC86520DC Rev. C 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation FDMC86520DC Rev. C 8 www.fairchildsemi.com FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ PowerTrench® F-PFS™ The Power Franchise® ® AccuPower™ PowerXS™ FRFET® Global Power ResourceSM AX-CAP™* Programmable Active Droop™ ® ® Green Bridge™ BitSiC QFET TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Current Transfer Logic™ Saving our world, 1mW/W/kW at a time™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ SmartMax™ Dual Cool™ and Better™ TranSiC® SMART START™ EcoSPARK® MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ ® SuperSOT™-3 MillerDrive™ Fairchild UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® ® VisualMax™ Sync-Lock™ OPTOLOGIC FastvCore™ ® VoltagePlus™ OPTOPLANAR ®* FETBench™ XS™ FlashWriter® * ® FPS™