BCD AP2114H-2.5TRG1 1a low noise cmos ldo regulator with enable Datasheet

Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
General Description
Features
The AP2114 is CMOS process low dropout linear
regulator with enable function, the regulator delivers
a guaranteed 1A (Min.) continuous load current.
•
•
•
•
The AP2114 features low power consumption.
•
The AP2114 is available in 1.2V, 1.8V, 2.5V and
3.3V regulator output, and available in excellent
output accuracy 1.5%, it is also available in an
excellent load regulation and line regulation
performance.
•
•
•
The AP2114 is available in standard packages of
SOT-223, TO-252-2 (1), TO-252-2 (3), TO-263-3,
SOIC-8 and PSOP-8.
•
•
•
•
•
AP2114
Output Voltage Accuracy: ±1.5%
Output Current: 1A (Min.)
Fold-back Short Current Protection: 50mA
Low Dropout Voltage (3.3V): 450mV (Typ.)
@IOUT=1A
Stable with 4.7µF Flexible Cap: Ceramic,
Tantalum and Aluminum Electrolytic
Excellent Line Regulation: 0.02%/V (Typ.),
0.1%/V (Max.) @ IOUT=30mA
Excellent Load Regulation: 0.2% @IOUT=0A to
1A
Low Quiescent Current: 60µA (1.2V/1.8V/
2.5V)
Low Output Noise: 30µVRMS
PSRR: 68dB @ Freq=1KHz (1.2V/1.8V)
OTSD Protection
Operating Temperature Range: -40°C to 85°C
ESD: MM 400V, HBM 4000V
Applications
•
•
•
LCD Monitor
LCD TV
STB
SOT-223
TO-263-3
TO-252-2 (1)
TO-252-2 (3)
SOIC-8
PSOP-8
Figure 1. Package Types of AP2114
Oct. 2010
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
1
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Pin Configuration
H Package
(SOT-223)
S Package
(TO-263-3)
D Package
(TO-252-2 (1))
(TO-252-2 (3))
M Package
(SOIC-8)
MP Package
(PSOP-8)
Figure 2. Pin Configuration of AP2114 (Top View)
Oct. 2010
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
2
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Pin Descriptions
Pin Number
SOT-223, TO-263-3,
TO-252-2 (1) / (3)
1
2
3
SOIC-8/PSOP-8
Pin
Name
1, 3, 5, 6, 7,
2
4
8
GND
VOUT
VIN
EN
Function
Ground
Regulated Output
Input Voltage Pin
Chip Enable, H – normal work, L – shutdown output
Functional Block Diagram
EN
(8)
3 (4)
Shutdown
Logic
VIN
Foldback
Current Limit
Thermal
Shutdown
2 (2)
VOUT
3m
VREF
GND
1 (1, 3, 5, 6, 7)
A (B)
A: SOT-223, TO-263-3, TO-252-2 (1)/(3)
B: SOIC-8, PSOP-8
Figure 3. Functional Block Diagram of AP2114
Oct. 2010
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
3
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Ordering Information
AP2114
G1: Green
Circuit Type
Package
H: SOT-223
D: TO-252-2 (1)/TO-252-2 (3)
S: TO-263-3
M: SOIC-8
MP: PSOP-8
Package
Temperature
Range
SOT-223
-40 to 85°C
TO-252-2 (1)/
TO-252-2 (3)
-40 to 85°C
TO-263-3
-40 to 85°C
SOIC-8
-40 to 85°C
PSOP-8
-40 to 85°C
Part Number
AP2114H-1.2TRG1
AP2114H-1.8TRG1
AP2114H-2.5TRG1
AP2114H-3.3TRG1
AP2114D-1.2TRG1
AP2114D-1.8TRG1
AP2114D-2.5TRG1
AP2114D-3.3TRG1
AP2114S-1.2TRG1
AP2114S-1.8TRG1
AP2114S-2.5TRG1
AP2114S-3.3TRG1
AP2114M-1.2TRG1
AP2114M-1.8TRG1
AP2114M-2.5TRG1
AP2114M-3.3TRG1
AP2114MP-1.2TRG1
AP2114MP-1.8TRG1
AP2114MP-2.5TRG1
AP2114MP-3.3TRG1
TR: Tape & Reel
1.2: Fixed Output 1.2V
1.8: Fixed Output 1.8V
2.5: Fixed Output 2.5V
3.3: Fixed Output 3.3V
Marking ID
GH12C
GH12D
GH14C
GH12E
AP2114D-1.2G1
AP2114D-1.8G1
AP2114D-2.5G1
AP2114D-3.3G1
AP2114S-1.2G1
AP2114S-1.8G1
AP2114S-2.5G1
AP2114S-3.3G1
2114M-1.2G1
2114M-1.8G1
2114M-2.5G1
2114M-3.3G1
2114MP-1.2G1
2114MP-1.8G1
2114MP-2.5G1
2114MP-3.3G1
Packing
Type
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and Green.
Oct. 2010
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
4
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
VIN
6.5
V
Power Supply Voltage
Operating Junction Temperature
Range
Storage Temperature Range
TJ
150
ºC
TSTG
-65 to 150
ºC
Lead Temperature (Soldering, 10sec)
TLEAD
260
ºC
ESD (Machine Model)
400
V
ESD (Human Body Model)
4000
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Operating Ambient
Range
Oct. 2010
Temperature
Symbol
Min
Max
Unit
VIN
2.5
6.0
V
TA
-40
85
°C
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
5
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Electrical Characteristics
AP2114-1.2 Electrical Characteristics (Note 2)
(VIN=2.5V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40OC≤TA≤85OC
ranges, unless otherwise specified (Note 3))
Parameter
Symbol
Output Voltage
VOUT
Input Voltage
Test Conditions
VIN =2.5V, 1mA ≤ IOUT ≤ 30mA
Min
Typ
Max
Unit
VOUT
×98.5%
1.2
VOUT
×101.5%
V
6.0
V
VIN
Maximum Output Current
IOUT(MAX)
VIN=2.5V, VOUT=1.182V to 1.218V
1
A
Load Regulation
△VOUT/VOUT
△IOUT
VIN=2.5V, 1mA ≤ IOUT ≤1A
0.2
1
%/A
Line Regulation
△VOUT/VOUT
△VIN
2.5V≤VIN≤6V, IOUT=30mA
0.02
±0.1
%/V
Dropout Voltage
VDROP
IOUT=1.0A
1200
1300
mV
60
75
µA
Quiescent Current
Power
Ratio
IQ
Supply
Rejection
Output Voltage
Temperature Coefficient
Short Current Limit
PSRR
△VOUT/VOUT
△T
ISHORT
VIN=2.5V, IOUT=0mA
Ripple 1Vp-p
VIN=2.5V,
IOUT=100mA
f=100Hz
68
f=1KHz
68
dB
IOUT=30mA, TA =-40°C to 85°C
±30
ppm/°C
VOUT=0V
50
mA
30
µVRMS
RMS Output Noise
VNOISE
10Hz ≤ f ≤100kHz (No Load)
VEN High Voltage
VIH
Enable logic high, regulator on
VEN Low Voltage
VIL
Enable logic low, regulator off
Standby Current
ISTD
VIN=3.5V, VEN in OFF mode
Start-up Time
TS
EN Pull Down Resistor
RPD
VOUT Discharge Resistor
RDCHG
Thermal
Temperature
Thermal
Hysteresis
Shutdown
Shutdown
Thermal Resistance
(Junction to Case)
No Load
Set EN pin at Low
1.5
V
0.4
0.01
µA
20
µs
3.0
mΩ
60
Ω
TOTSD
160
THYOTSD
25
θJC
1.0
°C
SOIC-8
PSOP-8
SOT-223
TO-252-2 (1) / TO-252-2 (3)
TO-263-3
74.6
43.7
50.9
35
22
°C /W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Oct. 2010
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
6
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Electrical Characteristics (Continued)
AP2114-1.8 Electrical Characteristics (Note 2)
(VIN=2.8V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40OC≤TA≤85OC
ranges, unless otherwise specified (Note 3))
Parameter
Symbol
Output Voltage
VOUT
Maximum Output Current
△VOUT/VOUT
△IOUT
△VOUT/VOUT
△VIN
Load Regulation
Line Regulation
Dropout Voltage
VDROP
Quiescent Current
Power
Ratio
Supply
IOUT(MAX)
IQ
Rejection
Output Voltage
Temperature Coefficient
PSRR
△VOUT/VOUT
△T
Test Conditions
VIN =2.8V, 1mA ≤ IOUT ≤ 30mA
VIN=2.8V, VOUT=1.773V to 1.827V
Min
Typ
Max
Unit
VOUT
×98.5%
1.8
VOUT
×101.5%
V
1.0
A
VIN=2.8V, 1mA ≤ IOUT ≤1A
0.2
1.0
%/A
2.8V≤VIN≤6V, IOUT=30mA
0.02
±0.1
%/V
IOUT=1.0A
500
700
mV
VIN=2.8V, IOUT=0mA
60
75
µA
Ripple 1Vp-p
VIN=2.8V,
IOUT=100mA
f=100Hz
68
f=1KHz
68
dB
IOUT=30mA, TA =-40°C to 85°C
±30
ppm/°C
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
10Hz ≤ f ≤100kHz (No load)
30
µVRMS
VEN High Voltage
VIH
Enable logic high, regulator on
VEN Low Voltage
VIL
Enable logic low, regulator off
Standby Current
ISTD
VIN=3.5V, VEN in OFF mode
Start-up Time
TS
EN Pull Down Resistor
RPD
VOUT Discharge Resistor
RDCHG
Thermal
Temperature
Thermal
Hysteresis
Shutdown
Shutdown
Thermal Resistance
(Junction to Case)
No Load
Set EN pin at Low
1.5
V
0.4
0.01
20
µs
3.0
mΩ
60
Ω
TOTSD
160
THYOTSD
25
θJC
µA
1.0
°C
SOIC-8
74.6
PSOP-8
43.7
SOT-223
50.9
TO-252-2 (1) / TO-252-2 (3)
35
TO-263-3
22
°C /W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Oct. 2010
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
7
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Electrical Characteristics (Continued)
AP2114-2.5 Electrical Characteristics (Note 2)
(VIN=3.5V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40OC≤TA≤85OC
ranges, unless otherwise specified (Note 3))
Parameter
Symbol
Output Voltage
VOUT
Maximum Output Current
IOUT(MAX)
Test Conditions
VIN =3.5V, 1mA ≤ IOUT ≤ 30mA
VIN=3.5V, VOUT=2.463V to 2.537V
Min
Typ
Max
Unit
VOUT
×98.5%
2.5
VOUT
×101.5%
V
1.0
A
Load Regulation
△VOUT/VOUT
△IOUT
Vout=2.5V, VIN=Vout+1V
1mA ≤ IOUT ≤1A
0.2
1.0
%/A
Line Regulation
△VOUT/VOUT
△VIN
3.5V≤VIN≤6V, IOUT=30mA
0.02
±0.1
%/V
Dropout Voltage
VDROP
IOUT =1A
450
750
mV
Quiescent Current
IQ
VIN=3.5V, IOUT=0mA
60
80
µA
Ripple 1Vp-p
VIN=3.5V,
IOUT=100mA
f=100Hz
65
f=1KHz
65
Power
Ratio
Supply
Rejection
Output Voltage
Temperature Coefficient
PSRR
△VOUT/VOUT
△T
dB
IOUT=30mA
±30
ppm/°C
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
10Hz ≤ f ≤100kHz
30
µVRMS
VEN High Voltage
VIH
Enable logic high, regulator on
VEN Low Voltage
VIL
Enable logic low, regulator off
Standby Current
ISTD
VIN=3.5V, VEN in OFF mode
Start-up Time
TS
EN Pull Down Resistor
RPD
VOUT Discharge Resistor
RDCHG
Thermal
Temperature
Thermal
Hysteresis
Shutdown
Shutdown
Thermal Resistance
(Junction to Case)
No Load
Set EN pin at Low
1.5
0.01
µA
1.0
20
µs
3.0
mΩ
60
Ω
TOTSD
160
THYOTSD
25
θJC
V
0.4
°C
SOIC-8
74.6
PSOP-8
43.7
SOT-223
50.9
TO-252-2 (1) / TO-252-2 (3)
35
TO-263-3
22
°C /W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Oct. 2010
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
8
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Electrical Characteristics (Continued)
AP2114-3.3 Electrical Characteristics (Note 2)
(VIN=4.3V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40OC≤TA≤85OC
ranges, unless otherwise specified (Note 3))
Parameter
Symbol
Output Voltage
VOUT
Maximum Output Current
△VOUT/VOUT
△IOUT
△VOUT/VOUT
△VIN
Load Regulation
Line Regulation
Dropout Voltage
VDROP
Quiescent Current
Power
Ratio
Supply
IOUT(MAX)
IQ
Rejection
Output Voltage
Temperature Coefficient
PSRR
△VOUT/VOUT
△T
Test Conditions
VIN =4.3V, 1mA ≤ IOUT ≤ 30mA
VIN =4.3V, VOUT=3.25V to 3.35V
Min
Typ
Max
Unit
VOUT
×98.5%
3.3
VOUT
×101.5%
V
1.0
A
VIN=4.3V, 1mA ≤ IOUT ≤1A
0.2
1.0
%/A
4.3V≤VIN≤6V, IOUT=30mA
0.02
±0.1
%/V
IOUT=1A
450
750
mV
VIN=4.3V, IOUT=0mA
65
90
µA
Ripple 1Vp-p
VIN=4.3V,
IOUT=100mA
f=100Hz
65
f=1KHz
65
dB
IOUT=30mA
±30
ppm/°C
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
10Hz ≤ f ≤100kHz (No load)
30
µVRMS
VEN High Voltage
VIH
Enable logic high, regulator on
VEN Low Voltage
VIL
Enable logic low, regulator off
Standby Current
ISTD
VIN=3.5V, VEN in OFF mode
Start-up Time
EN Pull Down Resistor
VOUT Discharge Resistor
Thermal
Shutdown
Temperature
Thermal
Shutdown
Hysteresis
Thermal Resistance
(Junction to Case)
TS
No Load
RPD
RDCHG
Set EN pin at Low
1.5
V
0.4
0.01
20
µs
3.0
mΩ
60
Ω
TOTSD
160
THYOTSD
25
θJC
µA
1.0
°C
SOIC-8
74.6
PSOP-8
43.7
SOT-223
50.9
TO-252-2 (1) / TO-252-2 (3)
35
TO-263-3
22
°C /W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Oct. 2010
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
9
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics
400
500
VIN=2.5V
AP2114_1.2V
450
400
O
TA=25 C
350
Ground Current (µA)
Ground Current (µA)
350
O
TA=-40 C
O
TA=85 C
300
250
200
150
300
AP2114_1.8V
VIN=2.8V
CIN=4.7µF
COUT=4.7µF
250
200
150
O
TA=-40 C
100
O
TA=25 C
100
O
TA=85 C
50
50
0
0.0
0.2
0.4
0.6
0.8
0
0.0
1.0
0.2
Output Current (A)
Figure 4. Ground Current vs. Output Current
450.0
CIN=4.7µF
250
200
150
O
TA=-40 C
100
0.4
0.6
300.0
250.0
200.0
O
150.0
TA=-40 C
O
100.0
TA=25 C
O
50.0
TA=85 C
TA=85 C
0.2
350.0
O
TA=25 C
50
0.8
0.0
0.0
1.0
Output Current (A)
O
0.2
0.4
0.6
0.8
1.0
Output Current (A)
Figure 6. Ground Current vs. Output Current
Oct. 2010
1.0
AP2114_3.3V
VIN=4.3V
400.0
COUT=4.7µF
0
0.0
0.8
500.0
AP2114_2.5V
VIN=3.5V
Ground Current (µA)
Ground Current (µA)
300
0.6
Figure 5. Ground Current vs. Output Current
400
350
0.4
Output Current (A)
Figure 7. Ground Current vs. Output Current
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
10
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
100
100
AP2114_1.2V
VIN=2.5V
90
Quiescent Current (µA)
Quiescent Current (µA)
90
IOUT=0mA
80
70
60
50
80
70
60
50
AP2114_1.8V
VIN=2.8V
40
No Load
CIN=4.7µF
30
20
40
30
-40
COUT=4.7µF
10
-20
0
20
40
60
0
-40
80
-20
0
20
80
100
120
Figure 9. Quiescent Current vs. Temperature
100
AP2114_2.5V
VIN=3.5V
AP2114_3.3V
VIN=4.3V
90
No Load
CIN=4.7µF
Quiescent Current (µA)
Quiescent Current (µA)
Figure 8. Quiescent Current vs. Temperature
COUT=4.7µF
IOUT=0mA
80
70
60
50
40
-20
0
20
40
60
80
100
30
-40
120
-20
0
20
40
60
80
O
Temperature ( C)
O
Temperature ( C)
Figure 10. Quiescent Current vs. Temperature
Oct. 2010
60
O
Temperature ( C)
100
95
90
85
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
-40
40
Temperature ( C)
O
Figure 11. Quiescent Current vs. Temperature
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
11
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
110
100
AP2114_1.2V
IOUT=0mA
80
Quiescent Current (µA)
Quiescent Current (µA)
90
70
60
50
O
40
TA= -40 C
30
TA= 25 C
O
O
TA= 85 C
20
10
2
3
4
5
100
AP2114_1.8V
IOUT=0mA
90
TA=25 C
o
o
TA=-40 C
80
o
TA=85 C
70
60
50
40
30
2.5
6
3.0
3.5
Figure 12. Quiescent Current vs. Input Voltage
5.5
6.0
110
AP2114_2.5V
IOUT=0mA
100
Quiescent Current (µA)
TA=25 C
90
o
TA=-40 C
80
AP2114_3.3V
IOUT=0mA
100
o
Quiescent Current (µA)
5.0
Figure 13. Quiescent Current vs. Input Voltage
110
o
TA=85 C
70
60
90
80
70
60
50
50
40
40
O
TA= -40 C
O
30
3.0
3.5
4.0
4.5
5.0
5.5
6.0
TA= 25 C
O
TA= 85 C
3.5
4.0
4.5
5.0
5.5
6.0
Input Voltage (V)
Input Voltage (V)
Figure 14. Quiescent Current vs. Input Voltage
Oct. 2010
4.5
Input Voltage (V)
Input Voltage (V)
30
2.5
4.0
Figure 15. Quiescent Current vs. Input Voltage
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
12
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
AP2114_1.2V
1.88
1.212
VIN=2.5V
AP2114_1.8V
VIN=2.8V
1.86
CIN=4.7µF
1.84
COUT=4.7µF
IOUT=10mA
1.208
IOUT=100mA
1.204
IOUT=500mA
IOUT=1000mA
1.200
1.196
Output Voltage (V)
Output Voltage (V)
1.90
1.216
1.82
1.80
1.78
IOUT=10mA
1.76
IOUT=100mA
1.188
1.74
IOUT=500mA
1.184
1.72
1.192
1.180
-40
-20
0
20
40
60
IOUT=1000mA
1.70-40
80
-20
0
20
40
60
80
O
Temperature ( C)
O
Temperature ( C)
Figure 16. Output Voltage vs. Temperature
Figure 17. Output Voltage vs. Temperature
3.34
2.52
3.33
Output Voltage (V)
Output Voltage (V)
3.35
2.54
2.50
AP2114_2.5V
VIN=3.5V
2.48
CIN=4.7µF
2.46
COUT=4.7µF
IOUT=10mA
2.44
IOUT=100mA
IOUT=500mA
2.42
-20
0
20
40
60
3.31
3.30
3.29
3.28
IOUT=10mA
3.27
IOUT=100mA
3.25
-40
80
IOUT=500mA
IOUT=1000mA
-20
0
20
40
60
80
O
Temperature ( C)
O
Temperature ( C)
Figure 18. Output Voltage vs. Temperature
Oct. 2010
3.32
3.26
IOUT=1000mA
2.40
-40
AP2114_3.3V
VIN=4.3V
Figure 19. Output Voltage vs. Temperature
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
13
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
2.0
1.6
AP2114_1.2V
1.8
1.4
1.4
Output Voltage (V)
Output Voltage (V)
1.6
1.2
1.0
O
0.8
TA=-40 C
0.6
TA=25 C
O
O
TA=85 C
0.4
0.2
1.2
1
2
3
4
AP2114_1.8V
o
TA=-40 C
0.8
TA=25 C
o
o
TA=85 C
0.6
CIN=4.7µF
CIN=4.7µF
0.4
COUT=4.7µF
COUT=4.7µF
0.2
IOUT=10mA
IOUT=10mA
0.0
1.0
5
0.0
0.5
6
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Input Voltage (V)
Input Voltage (V)
Figure 20. Output Voltage vs. Input Voltage
Figure 21. Output Voltage vs. Input Voltage
6.0
4.0
AP2114_3.3V
2.5
Output Voltage (V)
3.5
Output Voltage (V)
2.0
AP2114_2.5V
CIN=4.7µF
1.5
COUT=4.7µF
IOUT=10mA
1.0
O
TA=-40 C
2.5
2.0
O
TA=-40 C
O
1.5
TA=25 C
1.0
TA=85 C
CIN=4.7µF
0.5
COUT=4.7µF
O
O
TA=25 C
0.5
3.0
O
TA=85 C
IOUT=10mA
0.0
1
2
3
4
5
6
0.0
0.5
7
Input Voltage (V)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Input Voltage (V)
Figure 22. Output Voltage vs. Input Voltage
Oct. 2010
1.0
Figure 23. Output Voltage vs. Input Voltage
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
14
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
1.210
1.3
AP2114_1.2V
AP2114_1.2V
1.2
1.200
1.1
1.195
1.0
Output Voltage (V)
Output Voltage (V)
1.205
1.190
1.185
1.180
VIN=2.5V
1.175
O
TA=-40 C
1.170
0.7
VIN=2.5V
0.6
0.5
0.4
O
0.3
TA=85 C
1.160
0.8
O
TA=25 C
1.165
0.9
VIN=3.3V
O
TA=25 C
CIN=4.7µF
0.2
COUT=4.7µF
0.1
1.155
1.150
0.0
0.2
0.4
0.6
0.8
0.0
0.0
1.0
0.2
0.4
Output Current (A)
Figure 24. Output Voltage vs. Output Current
CIN=4.7µF
COUT=4.7µF
O
TA=-40 C
0.75
O
TA=25 C
0.50
CIN=4.7µF
COUT=4.7µF
1.5
O
TA=-40 C
1.0
O
TA=25 C
O
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TA=85 C
0.5
0.0
0.0
1.6
Output Current (A)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Output Current (A)
Figure 26. Output Voltage vs. Output Current
Oct. 2010
1.4
AP2114_2.5V
VIN=3.5V
2.0
O
TA=85 C
0.25
0.00
0.0
1.2
2.5
AP2114_1.8V
VIN=2.8V
Output Voltage (V)
Output Voltage (V)
1.00
1.0
3.0
1.75
1.25
0.8
Figure 25. Output Voltage vs. Output Current
2.00
1.50
0.6
Output Current (A)
Figure 27. Output Voltage vs. Output Current
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
15
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
3.35
AP2114_3.3V
3.5
AP2114_3.3V
3.34
Output Voltage (V)
Output Voltage (V)
3.0
2.5
2.0
1.5
VIN=4.3V
VIN=5V
1.0
CIN=4.7µF
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TA=25 C
3.32
O
TA=85 C
3.31
3.30
3.27
0.0
1.6
0.2
0.4
0.6
0.8
1.0
Output Current (A)
Output Current (A)
Figure 28. Output Voltage vs. Output Current
Figure 29. Output Voltage vs. Output Current
0.60
0.7
0.55
AP2114_1.8V
VIN=2.8V
0.6
0.50
CIN=4.7µF
0.5
Dropout Voltage (V)
Dropout Voltage (V)
O
3.28
COUT=4.7µF
0.0
0.0
O
TA=-40 C
3.29
O
TA=25 C
0.5
VIN=4.3V
3.33
COUT=4.7µF
0.4
0.3
O
TA=-40 C
O
0.2
TA=25 C
0.0
TA=85 C
0.0
0.2
0.4
0.6
0.8
0.35
0.30
0.25
0.20
O
TA=-40 C
O
0.10
TA=25 C
0.05
TA=85 C
0.00
0.0
1.0
O
0.2
0.4
0.6
0.8
1.0
Output Current (A)
Output Current (A)
Figure 30. Dropout Voltage vs. Output Current
Oct. 2010
0.40
CIN=4.7µF
COUT=4.7µF
0.15
O
0.1
0.45
AP2114_2.5V
VIN=3.5V
Figure 31. Dropout Voltage vs. Output Current
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
16
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
1.8
0.55
CIN=4.7µF
0.50
COUT=4.7µF
0.45
AP2114_3.3V
O
O
TA=-40 C
0.40
O
TA=25 C
0.35
O
TA=85 C
0.30
AP2114_1.2V
1.6
Max. Output Current (A)
Dropout Voltage (V)
0.60
0.25
0.20
0.15
0.10
TA=25 C
1.4
CIN=4.7µF
COUT=4.7µF
1.2
1.0
0.8
0.6
0.4
0.2
0.05
0.00
0.0
0.2
0.4
0.6
0.8
0.0
2.0
1.0
2.5
3.0
4.0
4.5
5.0
5.5
Figure 32. Dropout Voltage vs. Output Current
Figure 33. Max. Output Current vs. Input Voltage
2.0
2.0
AP2114_2.5V
CIN=4.7µF
1.8
1.6
COUT=4.7µF
1.6
COUT=4.7µF
1.4
VOUT=1.8X(1+1.5%)
1.4
VOUT=2.5X(1+1.5%)
1.8
Max. Output Current (A)
AP2114_1.8V
CIN=4.7µF
1.2
1.0
0.8
0.6
1.2
1.0
0.8
0.6
0.4
0.4
0.2
0.2
0.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0.0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Input Voltage (V)
Input Voltage (V)
Figure 34. Max. Output Current vs. Input Voltage
Oct. 2010
6.0
Input Voltage (V)
Output Current (A)
Max. Output Current (A)
3.5
Figure 35. Max. Output Current vs. Input Voltage
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
17
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
0.10
1.8
AP2114_3.3V
1.4
COUT=4.7µF
1.2
AP2114_1.2V
VIN=2.5V
0.09
CIN=4.7µF
Output Short Current (A)
Max. Output Current (A)
1.6
O
TA=25 C
1.0
0.8
0.6
0.08
0.07
0.06
0.05
0.4
0.04
0.2
0.0
4.0
4.5
5.0
5.5
0.03
-40
6.0
-20
0
20
40
60
80
O
Temperature ( C)
Input Voltage (V)
Figure 36. Max. Output Current vs. Input Voltage
Figure 37. Output Short Current vs. Temperature
70
60
Output Short Current (mA)
Output Short Current (mA)
70
50
40
AP2114_1.8V
VIN=2.8V
30
CIN=4.7µF
60
50
40
AP2114_2.5V
VIN=3.5V
30
CIN=4.7µF
COUT=4.7µF
20
-40
-20
0
20
40
60
80
100
COUT=4.7µF
20
-40
120
0
20
40
60
80
100
120
O
O
Temperature ( C)
Temperature ( C)
Figure 38. Output Short Current vs. Temperature
Oct. 2010
-20
Figure 39. Output Short Current vs. Temperature
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
18
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
0.10
80
AP2114_3.3V
VIN=4.3V
AP2114_1.2V
70
60
0.08
PSRR (dB)
Output Short Current (A)
0.09
0.07
0.06
50
40
O
TA=25 C
30
0.05
CIN=1µF
20
0.04
COUT=4.7µF
IOUT=10mA
10
Ripple=1Vp-p
0.03
-40
-20
0
20
40
60
0
80
100
O
Figure 40. Output Short Current vs. Temperature
80
AP2114_2.5V
AP2114_1.8V
70
70
60
PSRR (dB)
PSRR (dB)
60
50
40
O
10
100k
Figure 41. PSRR vs. Frequency
80
20
10k
Frequency (Hz)
Temperature ( C)
30
1k
TA=25 C
50
40
O
TA=25 C
30
CIN=4.7µF
COUT=4.7µF
CIN=4.7µF
COUT=4.7µF
20
IOUT=10mA
10
Ripple=1Vp-p
0
100
1k
10k
0
100k
Frequency (Hz)
Ripple=1Vp-p
100
1k
10k
100k
Frequency (Hz)
Figure 42. PSRR vs. Frequency
Oct. 2010
IOUT=10mA
Figure 43. PSRR vs. Frequency
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
19
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
80
AP2114_3.3V
O
TA=25 C
70
CIN=1µF
COUT=4.7µF
60
PSRR (dB)
Ripple=1Vp-p
50
40
IOUT
500mA/div
VOUTAC
50mV/div
30
20
IOUT=10mA
IOUT=100mA
10
0
100
1k
10k
100k
Frequency (Hz)
Figure 44. PSRR vs. Frequency
Oct. 2010
Figure 45. Load Transient
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
20
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Application
Figure 46. Typical Application of AP2114
Oct. 2010
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
21
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Mechanical Dimensions
Rev. 1. 3
Unit: mm(inch)
3.700(0.146)
3.300(0.130)
6.700(0.264)
Oct. 2010
7.300(0.287)
SOT-223
BCD Semiconductor Manufacturing Limited
22
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Mechanical Dimensions (Continued)
TO-252-2 (1)
Oct. 2010
Rev. 1. 3
Unit: mm(inch)
BCD Semiconductor Manufacturing Limited
23
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Mechanical Dimensions (Continued)
Unit: mm(inch)
6.500(0.256)
6.700(0.264)
0.720(0.028)
0.900(0.035)
0.470(0.019)
0.600(0.024)
0.720(0.028)
0.850(0.033)
0.900(0.035)
1.100(0.043)
0
8
2.900REF
9.800(0.386)
10.40(0.409)
5
9
3
7
1.400(0.055)
1.700(0.067)
2.286(0.090)
BSC
4.700REF
0.600(0.024)
1.000(0.039)
0.150(0.006)
0.750(0.030)
1.29±0.1
5.250REF
5.130(0.202)
5.460(0.215)
1.800REF
6.000(0.236)
6.200(0.244)
0.900(0.035)
1.250(0.049)
TO-252-2 (3)
5
9
0
8
2.200(0.087)
2.380(0.094)
Oct. 2010
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
24
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Mechanical Dimensions (Continued)
TO-263-3
4.070(0.160)
4.820(0.190)
Unit: mm(inch)
3°
9.650(0.380)
10.290(0.405)
8.840(0.348)
70°
1.150(0.045)
1.390(0.055)
1.270(0.050)
1.390(0.055)
7.420(0.292)
14.760(0.581)
15.740(0.620)
1.150(0.045)
1.390(0.055)
3°
0.510(0.020)
0.990(0.039)
2.540(0.100)
2.540(0.100)
7.980(0.314)
2°
8°
0.380(0.015)
2.540(0.100)
0°
6°
Oct. 2010
2.640(0.104)
2.700(0.106)
0.360(0.014)
0.400(0.016)
7°
2.200(0.087)
5.600(0.220)
0.020(0.001)
0.250(0.010)
2.390(0.094)
2.690(0.106)
8.640(0.340)
9.650(0.380)
7°
Rev. 1. 3
2.540(0.100)
BCD Semiconductor Manufacturing Limited
25
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Mechanical Dimensions (Continued)
Unit: mm(inch)
R0.150(0.006)
SOIC-8
Oct. 2010
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
26
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Mechanical Dimensions (Continued)
Unit: mm(inch)
3.202(0.126)
3.402(0.134)
PSOP-8
Oct. 2010
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
27
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
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