DMN10H170SFDE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits 0.6mm Profile – Ideal for Low Profile Applications RDS(ON) max ID max TA = +25°C PCB Footprint of 4mm2 Low On-Resistance 160mΩ @ VGS = 10V 2.9A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) V(BR)DSS 100V 200mΩ @ VGS = 4.5V 2.6A Mechanical Data Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Weight: 0.0065 grams (Approximate) D U-DFN2020-6 G S Bottom View Equivalent Circuit Pin Out Ordering Information (Note 4) Part Number DMN10H170SFDE-7 DMN10H170SFDE-13 Notes: Compliance Standard Standard Case U-DFN2020-6 U-DFN2020-6 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information U-DFN2020-6 YM ADVANCE INFORMATION ADVANCED INFORMATION Product Summary 7H Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMN10H170SFDE Datasheet number: DS35901 Rev. 4 - 2 Mar 3 7H = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) 2016 D Apr 4 2017 E May 5 Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 2019 G Aug 8 Sep 9 2020 H Oct O 2020 I Nov N Dec D February 2015 © Diodes Incorporated DMN10H170SFDE Maximum Ratings (@TA = +25°C unless otherwise specified.) ADVANCE INFORMATION ADVANCED INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C t<10s Value 100 ±20 2.9 2.3 ID A 3.4 2.7 10 2.5 4.7 16 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Body Diode Continuous Current Avalanche Current (Note 7) Avalanche Energy (Note 7) Units V V IDM IS IAS EAS A A A A mJ Thermal Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics Value 0.66 0.42 189 132 2.03 1.31 61 43 9.3 -55 to +150 PD RJA PD RJA RJC TJ, TSTG Units W °C/W W °C/W °C (@TA = +25°C unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 - - 1 ±100 V µA nA VGS = 0V, ID = 250μA VDS = 100V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.0 RDS(ON) - mΩ VSD - 3.0 160 200 1.0 V Static Drain-Source On-Resistance 2.0 116 126 0.9 VDS = VGS, ID = 250μA VGS = 10V, ID = 5.0A VGS = 4.5V, ID =5.0A VGS = 0V, IS = 10A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf Trr Qrr - 1167 36 25 1.3 4.9 9.7 2.0 2.0 10.5 11.1 42.6 12.8 30.3 35.2 - pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: V Test Condition VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 80V, ID = 12.8A VDS = 50V, ID = 12.8A VGS = 10V, RG = 25Ω IF = 12.8A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7 .UIS in production with L = 1.43mH, TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN10H170SFDE Datasheet number: DS35901 Rev. 4 - 2 2 of 6 www.diodes.com February 2015 © Diodes Incorporated DMN10H170SFDE 10 10 VDS = 5.0V 8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 6 4 2 6 TA = 150°C 4 TA = 125°C TA = 85°C 2 TA = 25°C TA = -55°C 0.5 1.0 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.20 0.18 VGS = 1.8V 0.16 0.14 VGS = 2.5V 0.12 VGS = 4.5V 0.10 0.08 0.06 0.04 0.02 0 1 2 3 4 5 6 7 8 ID, DRAIN-SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 9 2.6 2.2 VGS = 10V ID = 10A 2.0 1.8 1.6 VGS = 5V ID = 5A 1.4 1.2 1.0 0.8 0.6 0.4 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMN10H170SFDE Datasheet number: DS35901 Rev. 4 - 2 1 2 3 4 VGS, GATE-SOURCE VOLTAGE Fig. 2 Typical Transfer Characteristics VGS= 4.5V 0.35 0.30 TA = 150°C 0.25 TA = 125°C 0.20 TA = 85°C 0.15 TA = 25°C 0.10 TA = -55°C 0.05 0 0 3 of 6 www.diodes.com 5 0.40 10 2.8 2.4 0 2.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATION ADVANCED INFORMATION 8 2 4 6 8 ID, DRAIN CURRENT Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 10 0.30 VGS = 10V ID = 10A 0.25 0.20 VGS = 5V ID = 5A 0.15 0.10 0.05 0 - 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 6 On-Resistance Variation with Temperature February 2015 © Diodes Incorporated DMN10H170SFDE 10 2.0 IS, SOURCE CURRENT (V) VGS(th), GATE THRESHOLD VOLTAGE (V) 9 2.5 ID = 250µA 1.5 1.0 8 7 6 5 TA = 25°C 4 3 2 0.5 1 0 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) 10 Ciss Coss Crss f = 1MHz 0 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 40 8 VDS = 80V ID = 12.8A 6 4 2 0 0 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate Charge 10 100 RDS(on) Limited ID , DRAIN CURRENT (A) ADVANCE INFORMATION ADVANCED INFORMATION 3.0 10 1 DC PW = 10s 0.1 PW = 1s PW = 100ms TJ(m ax) = 150°C 0.01 T = 25°C A PW = 10ms VGS = 10V Single Pulse 0.001 DUT on 1 * MRP Board 0.1 PW = 1ms PW = 100µs 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area DMN10H170SFDE Datasheet number: DS35901 Rev. 4 - 2 1000 4 of 6 www.diodes.com February 2015 © Diodes Incorporated DMN10H170SFDE r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION ADVANCED INFORMATION 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RJA(t) = r(t) * RJA RJA = 61°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 11 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A1 A A3 D b1 K1 D2 E E2 L1 L(2X) K2 Z(4X) DMN10H170SFDE Datasheet number: DS35901 Rev. 4 - 2 e b(6X) 5 of 6 www.diodes.com U-DFN2020-6 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 — — 0.15 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 E 1.95 2.05 2.00 E2 1.40 1.60 1.50 e — — 0.65 L 0.25 0.35 0.30 L1 0.82 0.92 0.87 K1 — — 0.305 K2 — — 0.225 Z — — 0.20 All Dimensions in mm February 2015 © Diodes Incorporated DMN10H170SFDE Suggested Pad Layout ADVANCE INFORMATION ADVANCED INFORMATION Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Dimensions Y3 Y2 X2 C X X1 X2 Y Y1 Y2 Y3 Y1 X1 X (6x) C Value (in mm) 0.650 0.400 0.285 1.050 0.500 0.920 1.600 2.300 Y (2x) IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMN10H170SFDE Datasheet number: DS35901 Rev. 4 - 2 6 of 6 www.diodes.com February 2015 © Diodes Incorporated