Rohm DTA114GUA -100ma / -50v digital transistors (with built-in resistor) Datasheet

-100mA / -50V Digital transistors
(with built-in resistor)
DTA114GUA / DTA114GKA
 Applications
Inverter, Interface, Driver
 Dimensions (Unit : mm)
DTA114GUA
2.0
0.9
0.2
0.3
 Features
1)The built-in bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input, and
parasitic effects are almost completely eliminated.
2)Only the on / off conditions need to be set for operation,
making the device design easy.
3)Higher mounting densities can be achieved.
0.7
2.1
1.25
(3)
0.65 0.65
0.15
1.3
ROHM : UMT3
EIAJ : SC-70
0.1Min.
(1)
(2)
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Abbreviated symbol : K14
 Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
DTA114GKA
2.9
1.1
0.4
0.8
(3)
1.6
2.8
 Packaging specifications
(2)
0.15
1.9
ROHM : SMT3
EIAJ : SC-59
www.rohm.com
Each lead has same dimensions
 Inner circuit
Unit
Symbol
Limits
V
VCBO
−50
−50
V
VCEO
−5
V
VEBO
IC
−100
mA
mW
Pc
200
150
°C
Tj
Tstg −55 to +150 °C
c 2009 ROHM Co., Ltd. All rights reserved.
○
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : K14
 Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
(1)
0.95 0.95
0.3Min.
Package
UMT3 SMT3
Packaging type
Taping Taping
T146
T106
Code
Part No. Basic ordering unit (pieces) 3000
3000
DTA114GUA
−
DTA114GKA
−
C
B
R
E
E : Emitter
C : Collector
B : Base
R=10kΩ
1/2
2009.06 - Rev.B
DTA114GUA / DTA114GKA
Data Sheet
 Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ.
−
BVCBO −50
Collector-base breakdown voltage
−
Collector-emitter breakdown voltage BVCEO −50
−5
−
BVEBO
Emitter-base breakdown voltage
−
−
ICBO
Collector cutoff current
−300
−
IEBO
Emitter cutoff current
−
−
Collector-emitter saturation voltage VCE(sat)
−
hFE
30
DC current transfer ratio
10
R1
7
Emitter-base resistance
−
250
fT ∗
Transition frequency
Max. Unit
Conditions
−
V IC= −50μA
−
V IC= −1mA
−
V IE= −720μA
−0.5 μA VCB= −50V
−580 μA VEB= −4V
−0.3
V IC= −10mA, IB= −0.5mA
−
IC= −5mA, VCE= −5V
−
−
13
kΩ
−
MHz VCE= −10V, IE=50mA, f=100MHz
∗ Characteristics of built-in transistor
DC CURRENT GAIN : hFE
Ta=25˚C
500 VO=5V
200
100
50
20
10
5
2
0.5
1
2
5
10
20
50 100
COLLECTOR CURRENT : Ic (mA)
Fig.1 DC Current gain
vs. Collector Current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
COLLECTOR SATURATION VOLTAGE: VCE (sat)(mV)
 Electrical characteristic curves
1000
Ta=25˚C
500
200
IC / IB=20 / 1
100
50
IC / IB=10 / 1
20
10
1
2
5
10
20
50
100
COLLECTOR CURRENT : VDS (V)
Fig.2 Collector-emitter saturation voltage
vs. Collector Current
2/2
2009.06 - Rev.B
Notice
Notes
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illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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