SEMICONDUCTOR E35A21VBS, E35A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ·Average Forward Current : IO=35A. ·Zener Voltage : 21V(Typ.) POLARITY E35A21VBS (+ Type) : Mark : ZG E35A21VBR (- Type) : Mark : ZA K H MAXIMUM RATING (Ta=25℃) CHARACTERISTIC E I SYMBOL RATING UNIT Average Forward Current IF(AV) 35 A Peak 1 Cycle Surge Current IFSM 300 (60Hz) A Non-Repetitive Peak Reverse Surge Current (10mS) IRSM 42 A Transient Peak Reverse Voltage VRSM 19 V Peak Reverse Voltage VRM 16 V Junction Temperature Tj -40～215 ℃ Tstg -40～215 ℃ DIM A B C D E F G H I J K MILLIMETERS Φ11.5 MAX Φ12.75+0.09-0.00 _ 0.04 Φ1.3 + _ 0.2 4.2+ _ 0.2 8.0 + TYP 0.5 _ 0.2 Φ10.0 + _ 0.1x45 0.4+ 8.5 MAX 0.2+0.1 _ 0.5 28.35+ J D F G B B-PF Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Peak Forward Voltage VF IFM=100A - - 1.10 V Zener Voltage VZ IZ=10mA 19 21 23 V Reverse Current IR VR=18V - - 1 μV IFM=100A, IM=100mA, Pw=100mS - - 70 mV Transient Thermal Resistance ΔVF Breakdown Voltage Vbr Irsm=42A, Pw=10mS - - 32 V Temperature Coefficient αT IZ=10mA - 15.7 - mV/℃ HIR Ta=150℃, VR=18V - - 100 μA Rth DC total junction to case - - 0.8 ℃/W Reverse Leakage Current Under High Temperature Temperature Resistance 2002. 4. 16 Revision No : 4 1/1