Type BSC110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) VDS 60 V RDS(on),max 11 mW ID 50 A • Superior thermal resistance • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type BSC110N06NS3 G Package PG-TDSON-8 Marking 110N06NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 50 V GS=10 V, T C=100 °C 33 V GS=10 V, T C=25 °C, R thJA =50K/W 2) 12 Unit A Pulsed drain current3) I D,pulse T C=25 °C 200 Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 W 22 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) 3) 4) See figure 3 for more detailed information See figure 13 for more detailed information Rev.2.4 page 1 2013-05-21 BSC110N06NS3 G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 50 T A=25 °C, T j, T stg -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.5 R thJA=50 K/W 2) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. - - 2.5 minimal footprint - - 62 6 cm² cooling area2) - - 50 Thermal characteristics Thermal resistance, junction - case R thJC Device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=23 µA 2 3 4 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=60 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=50 A - 9.0 11 mW Gate resistance RG - 1.3 - W Transconductance g fs 25 50 - S Rev.2.4 |V DS|>2|I D|R DS(on)max, I D=50 A page 2 2013-05-21 BSC110N06NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - 2000 2700 - 440 590 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=30 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 17 - Turn-on delay time t d(on) - 10 - Rise time tr - 77 - Turn-off delay time t d(off) - 14 - Fall time tf - 6 - Gate to source charge Q gs - 12 - Gate charge at threshold Q g(th) - 6 - Gate to drain charge Q gd - 3 - Switching charge Q sw - 8 - Gate charge total Qg - 25 33 Gate plateau voltage V plateau - 5.9 - Output charge Q oss - 20 27 - - 53 - - 212 - 0.95 1.2 V - 36 - ns - 38 - nC V DD=30 V, V GS=10 V, I D=50 A, R G,ext=3 W ns Gate Charge Characteristics5) V DD=30 V, I D=50 A, V GS=0 to 10 V V DD=30 V, V GS=0 V nC V Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) A T C=25 °C V GS=0 V, I F=50 A, T j=25 °C V R=30 V, I F=50A , di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev.2.4 page 3 2013-05-21 BSC110N06NS3 G 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 60 60 50 50 40 40 ID [A] Ptot [W] 1 Power dissipation 30 30 20 20 10 10 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 limited by on-state resistance 1 µs 102 0.5 100 ZthJC [K/W] ID [A] 10 µs 101 100 µs 0.2 0.1 0.05 10-1 100 0.02 0.01 1 ms single pulse 10 ms DC 10-1 10-2 10-1 100 101 102 VDS [V] Rev.2.4 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2013-05-21 BSC110N06NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 200 28 5V 26 5.5 V 6V 7V 10 V 24 22 150 20 RDS(on) [mW] 18 ID [A] 7V 100 16 14 12 10 8 6V 50 10 V 6 5.5 V 4 2 5V 0 0 0 1 2 3 4 0 50 100 VDS [V] 150 200 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 120 80 100 60 gfs [S] ID [A] 80 60 40 40 20 20 150 °C 25 °C 0 0 0 2 4 6 8 VGS [V] Rev.2.4 0 20 40 60 80 100 120 ID [A] page 5 2013-05-21 BSC110N06NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 20 5 18 4 16 RDS(on) [mW] 14 230 mA VGS(th) [V] 3 12 max 10 typ 23 µA 2 8 6 1 4 2 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 10000 Ciss 103 1000 150°C 98% 102 102 150 °C25 °C IF [A] C [pF] Coss 100 25°C 98% 101 101 10 Crss 100 1 0 20 40 60 VDS [V] Rev.2.4 0 0.5 1 1.5 2 VSD [V] page 6 2013-05-21 BSC110N06NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=50 A pulsed parameter: T j(start) parameter: V DD 100 12 100 °C 125 °C 30 V 25 °C 10 12 V 10 48 V VGS [V] IAV [A] 8 1 6 4 2 0.1 0.1 1 10 100 0 1000 0 10 tAV [µs] 20 30 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 70 V GS Qg 65 VBR(DSS) [V] 60 55 V gs(th) 50 45 Q g(th) Q sw Q gs 40 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev.2.4 page 7 2013-05-21 BSC110N06NS3 G PG-TDSON-8 (SuperSO8) Rev.2.4 page 8 2013-05-21 BSC110N06NS3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.4 page 9 2013-05-21