SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW29 BCW30 ISSUE 3 - JULY 1995 PARTMARKING DETAILS BCW29 - C1 BCW30 - C2 BCW29R - C4 BCW30R - C5 E C B COMPLEMENTARY TYPES BCW29 - BCW31 BCW30 - BCW32 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -20 V Peak Pulse Current ICM -5 A Continuous Collector Current IC -100 A Power Dissipation at Tamb =25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT Base - Emitter Voltage VBE -600 -750 mV IC=-2mA, VCE =- 5V Collector-Emitter Saturation VCE(SAT) Voltage -80 -150 250 mV mV IC=-10mA, IB = - 0.5mA IC=-50mA, IB =-2.5mA Base-Emitter Saturation Voltage VBE(SAT) -720 -810 mV mV IC=-10mA, IB=-0.5mA IC =-50mA, IB=-2.5mA Collector- Base Cut-Off Current ICBO nA IE=0, VCB=-20V IE=0,VCB=-20V, Tj =100oC Static Forward Current Transfer Ratio BCW29 hFE BCW30 hFE Transition Frequency fT Collector Capacitance CTC Noise Figure N -100 -10 120 215 90 150 µA CONDITIONS. 260 IC=-10µ A, VCE=-5V IC=-2mA, VCE=-5V 500 IC=-10µ A, VCE=-5V IC=-2mA, VCE=-5V 150 MHz IC=-10mA, VCE=-5V f = 35MHz 7 pF IE =Ie =0, VCB =-10V f= 1MHz 10 dB IC= -200mA, VCE =-5V RS =2KΩ , f=1KHz B= 200Hz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device