Zetex BCW29R Sot23 pnp silicon planar small signal transistor Datasheet

SOT23 PNP SILICON PLANAR
SMALL SIGNAL TRANSISTORS
BCW29
BCW30
ISSUE 3 - JULY 1995
PARTMARKING DETAILS – BCW29 - C1
BCW30 - C2
BCW29R - C4
BCW30R - C5
E
C
B
COMPLEMENTARY TYPES – BCW29 - BCW31
BCW30 - BCW32
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-20
V
Peak Pulse Current
ICM
-5
A
Continuous Collector Current
IC
-100
A
Power Dissipation at Tamb =25°C
Ptot
330
mW
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
Base - Emitter Voltage
VBE
-600
-750
mV
IC=-2mA, VCE =- 5V
Collector-Emitter Saturation VCE(SAT)
Voltage
-80
-150
250
mV
mV
IC=-10mA, IB = - 0.5mA
IC=-50mA, IB =-2.5mA
Base-Emitter Saturation
Voltage
VBE(SAT)
-720
-810
mV
mV
IC=-10mA, IB=-0.5mA
IC =-50mA, IB=-2.5mA
Collector- Base Cut-Off
Current
ICBO
nA
IE=0, VCB=-20V
IE=0,VCB=-20V,
Tj =100oC
Static Forward
Current
Transfer
Ratio
BCW29
hFE
BCW30
hFE
Transition Frequency
fT
Collector Capacitance
CTC
Noise Figure
N
-100
-10
120
215
90
150
µA
CONDITIONS.
260
IC=-10µ A, VCE=-5V
IC=-2mA, VCE=-5V
500
IC=-10µ A, VCE=-5V
IC=-2mA, VCE=-5V
150
MHz
IC=-10mA, VCE=-5V
f = 35MHz
7
pF
IE =Ie =0, VCB =-10V
f= 1MHz
10
dB
IC= -200mA, VCE =-5V
RS =2KΩ , f=1KHz
B= 200Hz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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