Rohm BH6150F System reset ic Datasheet

Memory ICs
System reset IC
BH6150F
The BH6150F has two reset circuits, one detects the power supply voltage, and the other detects the input voltage.
With this one IC it is possible to apply a reset to the logic systems of CPUs, and mechanical systems.
Applications
•Personal
computers, CPUs, MPUs, logic circuits, reset
circuits for mechanical systems, level detector circuits,
battery voltage detector circuits, and backup power
supply switching circuits
•TwoFeatures
types of reset circuit provided.
1) Reset circuit 1 (input voltage detector)
Detection voltage: 1.25V (Typ.)
Transmission delay time: 200µs (Typ.)
Open collector output, and 10kΩ pull-up resistor on
chip.
2) Reset circuit 2 (supply voltage detector)
Detection voltage: 4.2V (Typ.)
Transmission delay time: 25, 50, 100 and 200 ms
(select using the Ct0 and Ct1 pins)
Manual reset function provided
Open collector output, and 10kΩ pull-up resistor on
chip.
•Absolute maximum ratings (Ta = 25°C)
Parameter
Power supply voltage
Symbol
Limits
Unit
VCC
– 0.3 ~ + 7.0
V
mW
Pd
450∗
Operating temperature
Topr
– 20 ~ + 75
°C
Storage temperature
Tstg
– 40 ~ + 125
°C
Power dissipation
∗ Reduced by 4.5mW for each increase in Ta of 1°C over 25°C.
1
Memory ICs
BH6150F
•Block diagram
8
7
6
10k
Reset Circuit 1
–
+
5
–
Vref
1.25V
Reset Circuit 2
10k
+
–
Delay
Circuit
Vref
1.25V
1
2
3
•Pin descriptions
Pin No.
Pin name
Function
1
Ct0
Delay time control∗
2
Input
Reset circuit 1 input
3
Ct1
Delay time control∗
4
GND
5
Output 2
Reset circuit 2 output
6
Output 1
Reset circuit 1 output
7
VCC
8
Manual reset
GND
Power supply
Manual reset input
∗ When neither Ct0 or Ct1 are connected, the delay time is 100ms (Typ.).
2
4
Memory ICs
BH6150F
•Input / output circuits
Ct0, Ct1
Input
Manual reset
Output 1, Output 2
3
Memory ICs
BH6150F
Electrical characteristics (unless otherwise specified V
•Reset
circuit 1
Parameter
CC
= 4.5V to 5.5V and Ta = 25°C)
Symbol
Min.
Typ.
Max.
Unit
Conditions
Detection voltage
VS1
1.20
1.25
1.30
V
—
Hysteresis voltage
∆VS1
9
15
23
mV
—
High level transmission delay time
TPLH1
80
200
500
µs
CL = 100pF
Low level transmission delay time
TPHL1
—
10
—
µs
CL = 100pF
Output low level voltage
VOL1
—
0.1
0.4
V
VIN < 1.2V, IOL = 5mA
Input voltage range
VIN
– 0.3
—
VCC
V
Input current
IIN
—
200
500
nA
—
VIN = 1.25V
Reset circuit 2
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Detection voltage
VS2
4.0
4.2
4.4
V
—
Hysteresis voltage
∆VS2
30
50
100
mV
—
High level transmission delay time
TPLH2
15
25
35
ms
Ct0 = L, Ct1 = H
30
50
70
ms
Ct0 = H, Ct1 = L
60
100
140
ms
Ct0 = H, Ct1 = H
120
200
280
ms
Ct0 = L, Ct1 = L
CL = 100pF
Low level transmission delay time
TPHL2
—
0.5
—
µs
CL = 100pF
Output low level voltage
VOL2
—
0.1
0.4
V
VCC < 4V, IOL = 5mA
Manual reset
Input high level voltage
VRESH
2
—
VCC
V
Input high level current
IRESH
—
20
80
µA
Input low level voltage
VRESL
– 0.3
—
0.8
V
—
VRES = 2V
—
Common specifications
Parameter
Circuit current when off
Circuit current when on
Detection voltage temperature coefficient
Symbol
Min.
Typ.
Max.
Unit
ICC1
—
1000
1400
µA
VCC = 5V, VIN > VS1
ICC2
—
2
3
mA
VCC = 4V, VIN < VS1
VS / ∆T
—
0.01
—
% / °C
—
V
IOH = 40µA
0.85
V
VSAT ⬉ 0.4V, RL = 1K
Output high level voltage
VOH1,2
Operation limit voltage
VOPL1,2
4
VCC – 0.7 VCC – 0.4
—
0.71
Conditions
—
Memory ICs
BH6150F
•Measurement circuit
VCC
RL = 1k
VOPL2: ON
CL
V
VOH1
VOL1
VOPL1
IOH
IOL
VCC
RL = 1k
ICC1
ICC2
A
IRESH
A
8
7
MRES
VCC
6
OUT 1 OUT 2
CL
BH6150F
VCC
VRES
Ct0
IN
Ct1
GND
1
2
3
4
A
VIN
VOPL2: ON
5
V
VOH2
VOL2
VOPL2
IOH
IOL
IIN
∆VS1
VS1
5
Memory ICs
BH6150F
•Circuit operation
VIN
5V
VS1 + ∆VS1 (Typ. = 1.265V)
VS1 (Typ. = 1.25V)
0V
VOUT1
VOH
TPLH1
TPHL1
TPLH1
VOL1
VCC
VCC
VS2 + ∆VS2 (Typ. = 4.25V)
VS2 (Typ. = 4.2V)
0V
VOUT2
VOH
TPLH2
VOL2
6
TPHL2
TPLH2
Memory ICs
BH6150F
•Electrical characteristic curves
25
HYSTERESIS VOLTAGE: ∆VS1 (mV)
DETECTING VOLTAGE: VS1 (V)
1.35
1.30
1.25
1.20
0
20
40
60
10
0
20
40
60
80
AMBIENT TEMPERATURE: Ta (°C)
AMBIENT TEMPERATURE: Ta (°C)
Fig. 1 Reset circuit 1 detector
voltage vs.
ambient temperature
Fig. 2 Reset circuit 1 Hysteresis
voltage vs.
ambient temperature
280
4.4
240
200
160
120
80
– 20
0
20
40
60
4.3
4.2
4.1
4.0
3.8
– 20
80
0
20
40
60
AMBIENT TEMPERATURE: Ta (°C)
AMBIENT TEMPERATURE: Ta (°C)
Fig. 3 Reset circuit 1 high level
transmission delay time vs.
ambient temperature
Fig. 4 Reset circuit 2 detector
voltage vs.
ambient temperature
“H” PROPAGATION DELAY TIME: TPLH2 (mS)
100
HYSTERESIS VOLTAGE: ∆ VS2 (mV)
15
5
– 20
80
DETECTING VOLTAGE: VS2 (V)
“H” PROPAGATION DELAY TIME: TPLH1 (µS)
1.15
– 20
20
80
60
40
20
0
– 20
0
20
40
60
80
80
200
Ct0 = L, Ct1 = L
160
120
Ct0 = H, Ct1 = H
80
Ct0 = H, Ct1 = L
40
Ct0 = L, Ct1 = H
0
– 20
0
20
40
60
80
AMBIENT TEMPERATURE: Ta (°C)
AMBIENT TEMPERATURE: Ta (°C)
Fig. 5 Reset circuit 2 Hysteresis
voltage vs.
ambient temperature
Fig. 6 Reset circuit 2 high level
transmission delay time vs.
ambient temperature
7
MAXIMUM OPERATING VOLTAGE: VOPL1, 2 (V)
Memory ICs
BH6150F
1.0
RL = 1k
0.5
RL = 27k
RL = ∞
0
0
0.5
1.0
POWER SUPPLY VOLTAGE: VCC (V)
Fig. 7 Operation limit voltage vs.
power supply voltage
•External dimensions (Units: mm)
1
4
0.11
1.27
0.15 ± 0.1
4.4 ± 0.2
5
1.5 ± 0.1
6.2 ± 0.3
5.0 ± 0.2
8
0.4 ± 0.1
0.3Min.
0.15
SOP8
8
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