AMMSEMI DCR1003SN0707 High power button capsule thyristor Datasheet

High Power
Button Capsule
Thyristor
Type
Number
DCR1003SN1818
DCR1003SN1717
DCR1003SN1616
DCR1003SN1515
DCR1003SN1414
DCR1003SN1313
DCR1003SN1212
DCR1003SN1111
DCR1003SN1010
DCR1003SN0909
DCR1003SN0808
DCR1003SN0707
DCR1003SN0606
DCR1003SN0505
DCR1003SN0404
DCR1003SN0303
DCR1003SN0202
DCR1003SN0101
DCR1004SN1818
DCR1004SN1717
DCR1004SN1616
DCR1004SN1515
DCR1004SN1414
DCR1004SN1313
DCR1004SN1212
DCR1004SN1111
DCR1004SN1010
DCR1004SN0909
DCR1004SN0808
DCR1004SN0707
DCR1004SN0606
DCR1004SN0505
DCR1004SN0404
DCR1004SN0303
DCR1004SN0202
DCR1004SN0101
Non-Repetitive
Peak Voltages
VDSM VRSM
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
Repetitive
Peak Voltages
VDRM VRRM
1700.
1600.
1500.
1400.
1300.
1200.
1100.
1000.
900.
800.
700.
600.
500.
400.
300.
200.
150.
75.
OUTLINE N
CURRENT RATINGS― DOUBLE SIDE COOLED
IT(AV)
Mean on-state current
IRMS
RMS value
IT
Continuous (direct) on-state current
R(th(J-h)
Thermal resistance junction to
heatsink surface
Half wave resistive load THS = 55oC
THS = 55oC
THS = 55oC
Clamping force 19.5kN
(with mounting grease)
CURRENT RATINGS―SINGLE SIDE COOLED
IT(AV)
Mean on-state current
IRMS
RMS value
IT
Continuous (direct) on-state current
R(th(J-h)
Thermal resistance junction to
heatsink surface
Half wave resistive load THS = 55oC
THS = 55oC
THS = 55oC
Clamping force 19.5kN
(with mounting grease)
SURGE RATINGS
ITRM
Repetitive peak on-state current
2
2
It
I t for fusing
ITSM
dlT/dt
Surge (non-repetitive) on-state current
Rate of rise of on-state current
dv/dt*
Max linear rate of rise of off-state voltage
*Higher values available.
GATE RATINGS
VFGM
Peak forward gate voltage
VFGN
Peak forward gate voltage
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
PGM
Peak gate power
PG
Mean gate power
TEMPERATURE & FREQUENCY RATINGS
TVJ
Virtual junction temperature
Tstg
F
d.c.
Half-wave
3-phase
1540 A
2420 A
2050 A
.026OC/W
.028OC/W
.030OC/W
d.c.
Half-wave
3-phase
870 A
1365 A
1060 A
.06oC/W
.062oC/W
.064oC/W
Sinusoidal waveform conduction angle
ɬ = 30o THS = 55oC
10mS half sine TJ = 125oC
3mS half sine TJ = 125oC
With 50% VRSM TJ = 125oC
From VD to 1000A, Gate source 10V
5Ω rise time 0.5µs, TJ = 125oC
Voltage = 67%VDRM, Tcase = 125oC
14920 A
Anode positive with respect to cathode
Anode negative with respect to cathode
30 V
0.25 V
5V
10 A
150 W
10 W
2205000 A2sec
1540000 A2sec
21000 A
100A/µs
300 V/ µs
Anode positive with respect to cathode
Pulse width = 100µ
On-state (conduction)
Off-state (blocking)
Storage temperature range
Frequency range
-55 to
10 to
135OC
125OC
125 OC
400 Hz
Document Page 1 of 4
Revised 05/2016
Tel. 1-973-377-9566 Fax. 1-973-377-3078
133 Kings Road
Madison, New Jersey 07940
United States of America
© 2016 American Microsemiconductor, Inc.
Specifications are subject to change without notice
DCR1003 Series
DCR1004 Series
IT(AV) = 1540A
VRRM = 1700V
www.americanmicrosemi.com
DEKRA Certification Inc.
AS9100C and ISO 9001:2008
Certificate No. 131519.01
DCR1003 Series
DCR1004 Series
IT(AV) = 1540 A
VRRM = 1700 V
o
CHARACTERISTICS― Tcase = 25 C unless otherwise stated
LIMIT
5%
VTM
On-state voltage
Max
Units
DCR 1003
1.5
V
DCR1004
1.625
V
o
50
mA
o
50
mA
At 2900A peak
Typ
IDM
Peak off-state current
Tcase = 125 C
IRM
Peak reverse current
Tcase = 125 C
IL
Latching current
VD = 5V Tp = 30µS
120
IH
Holding current
VD = 5V Gate open circuit
77
td
Delay time
VD = 100V, Gate source = 25V 5Ω
tq
Circuit commutated
IT = 800A, VRRM = 50V, dlRR/dt = 20A/µS
Turn-off time
VDR = full rated VD,
95%
mA
mA
0.58
0.8
1.52
µs
90
215
380
µs
o
dVDR/dt = 20V/µs Iinear , Tcase = 125 C
VGT
Gate trigger voltage
VDRM = 5V
3.5
VGD
Gate non-trigger voltage
At VDRM, Tcase = 5V
0.25
V
IGT
Gate trigger current
VDWM = 5V
200
mA
Document Page 2 of 4
Revised 05/2016
Tel. 1-973-377-9566 Fax. 1-973-377-3078
133 Kings Road
Madison, New Jersey 07940
United States of America
© 2016 American Microsemiconductor, Inc.
Specifications are subject to change without notice
V
www.americanmicrosemi.com
DEKRA Certification Inc.
AS9100C and ISO 9001:2008
Certificate No. 131519.01
DCR1003 Series
DCR1004 Series
IT(AV) = 1540 A
VRRM = 1700 V
T-25-21
Document Page 3 of 4
Revised 05/2016
Tel. 1-973-377-9566 Fax. 1-973-377-3078
133 Kings Road
Madison, New Jersey 07940
United States of America
© 2016 American Microsemiconductor, Inc.
Specifications are subject to change without notice
www.americanmicrosemi.com
DEKRA Certification Inc.
AS9100C and ISO 9001:2008
Certificate No. 131519.01
DCR1003 Series
DCR1004 Series
IT(AV) = 1540 A
VRRM = 1700 V
Document Page 4 of 4
Revised 05/2016
Tel. 1-973-377-9566 Fax. 1-973-377-3078
133 Kings Road
Madison, New Jersey 07940
United States of America
© 2016 American Microsemiconductor, Inc.
Specifications are subject to change without notice
www.americanmicrosemi.com
DEKRA Certification Inc.
AS9100C and ISO 9001:2008
Certificate No. 131519.01
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