AD ADG442 Lc mos quad spst switch Datasheet

LC2MOS Quad SPST Switches
ADG441/ADG442/ADG444
Data Sheet
FUNCTIONAL BLOCK DIAGRAM
44 V supply maximum ratings
VSS to VDD analog signal range
Low on resistance (<70 Ω)
Low ΔRON (9 Ω max)
Low RON match (3 Ω max)
Low power dissipation
Fast switching times
tON < 110 ns
tOFF < 60 ns
Low leakage currents (3 nA max)
Low charge injection (6 pC max)
Break-before-make switching action
Latch-up proof A grade
Plug-in upgrade for DG201A/ADG201A, DG202A/ADG202A,
DG211/ADG211A
Plug-in replacement for DG441/DG442/DG444
APPLICATIONS
Audio and video switching
Automatic test equipment
Precision data acquisition
Battery-powered systems
Sample-and-hold systems
Communication systems
S1
IN1
D1
S2
IN2
D1
S2
IN2
ADG441
ADG444
D2
S3
IN3
ADG442
D2
S3
IN3
D3
S4
IN4
D3
S4
IN4
D4
SWITCHES SHOWN FOR A LOGIC 1 INPUT
D4
Figure 1.
Each switch conducts equally well in both directions when ON
and has an input signal range that extends to the power
supplies. In the OFF condition, signal levels up to the supplies
are blocked. All switches exhibit break-before-make switching
action for use in multiplexer applications. Inherent in the
design is the low charge injection for minimum transients when
switching the digital inputs.
PRODUCT HIGHLIGHTS
1.
GENERAL DESCRIPTION
The ADG441, ADG442, and ADG444 are monolithic CMOS
devices that comprise of four independently selectable switches.
They are designed on an enhanced LC2MOS process that
provides low power dissipation yet gives high switching speed
and low on resistance.
The on resistance profile is very flat over the full analog input
range, which ensures good linearity and low distortion when
switching audio signals. High switching speed also makes the
parts suitable for video signal switching. CMOS construction
ensures ultralow power dissipation, making the parts ideally
suited for portable and battery-powered instruments. The
ADG441, ADG442, and ADG444 contain four independent
SPST switches. Each switch of the ADG441 and ADG444 turns
on when a logic low is applied to the appropriate control input.
The ADG442 switches are turned on with logic high on the
appropriate control input. The ADG441 and ADG444 switches
differ in that the ADG444 requires a 5 V logic power supply
that is applied to the VL pin. The ADG441 and ADG442 do not
have a VL pin, the logic power supply is generated internally by
an on-chip voltage generator.
Rev. B
S1
IN1
05233-001
FEATURES
2.
3.
4.
5.
6.
Extended signal range. The ADG441A/ADG442A/
ADG444A are fabricated on an enhanced LC2MOS,
trench-isolated process, giving an increased signal range
that extends to the supply rails.
Low power dissipation.
Low RON.
Trench isolation guards against latch-up for A grade parts.
A dielectric trench separates the P and N channel
transistors thereby preventing latch-up even under severe
overvoltage conditions.
Break-before-make switching. This prevents channel
shorting when the switches are configured as a multiplexer.
Single-supply operation. For applications where the analog
signal is unipolar, the ADG441/ADG442/ADG444 can be
operated from a single-rail power supply. The parts are
fully specified with a single 12 V power supply.
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ADG441/ADG442/ADG444
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Absolute Maximum Ratings ............................................................5
Applications ....................................................................................... 1
ESD Caution...................................................................................5
General Description ......................................................................... 1
Pin Configuration and Function Descriptions..............................6
Functional Block Diagram .............................................................. 1
Typical Performance Characteristics ..............................................7
Product Highlights ........................................................................... 1
Test Circuits........................................................................................9
Revision History ............................................................................... 2
Terminology .................................................................................... 11
Specifications..................................................................................... 3
Trench Isolation .............................................................................. 12
Dual Supply ................................................................................... 3
Outline Dimensions ....................................................................... 13
Single Supply ................................................................................. 4
Ordering Guide .......................................................................... 14
REVISION HISTORY
5/14—Rev. A to Rev. B
Updated Outline Dimensions ....................................................... 13
Changes to Ordering Guide .......................................................... 14
5/05—Rev. 0 to Rev. A
Changes to Format ............................................................. Universal
Deleted CERDIP Package and T Grade .......................... Universal
Changes to Features and Product Highlights ............................... 1
Changes to Test Conditions in Table 2 .......................................... 4
Changes to Figure 11 ........................................................................ 8
Changes to Trench Isolation Section ........................................... 12
Updated Outline Dimensions ....................................................... 13
Changes to Ordering Guide .......................................................... 14
4/94–Revision 0: Initial Version
Rev. B | Page 2 of 16
Data Sheet
ADG441/ADG442/ADG444
SPECIFICATIONS
DUAL SUPPLY1
VDD = +15 V ± 10%, VSS = −15 V ± 10%, VL = +5 V ± 10% (ADG444), GND = 0 V, unless otherwise noted.
Table 1.
Parameter
ANALOG SWITCH
Analog Signal Range
RON
+25°C
B Version
−40°C to +85°C
VSS to VDD
40
70
∆RON
RON Match
85
4
9
1
3
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
±0.01
±3
Drain OFF Leakage ID (OFF)
±0.5
±0.01
±0.5
±0.08
±0.5
±3
Channel ON Leakage ID, IS (ON)
tOFF
tOPEN
Charge Injection
OFF Isolation
Channel-to-Channel Crosstalk
CS (OFF)
CD (OFF)
CD, CS (ON)
POWER REQUIREMENTS
IDD
ADG441/ADG442
ADG444
ISS
IL (ADG444 Only)
1
2
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
Test Conditions/Comments
VD = ±8.5 V, IS = −10 mA
VDD = +13.5 V, VSS = −13.5 V
−8.5 V ≤ VD ≤ +8.5 V
VD = 0 V, IS = −10 mA
VDD = +16.5 V, VSS = −16.5 V
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
DYNAMIC CHARACTERISTICS2
tON
Unit
85
110
45
60
30
1
6
60
100
4
4
16
nA typ
VD = ±15.5 V, VS = ∓15.5 V
See Figure 15
VD = ±15.5 V, VS = ∓15.5 V
See Figure 15
VS = VD = ±15.5 V
See Figure 16
±3
nA max
nA typ
nA max
2.4
0.8
V min
V max
±0.00001
±0.5
µA typ
µA max
VIN = VINL or VINH
ns typ
ns max
ns typ
ns max
ns typ
pC typ
pC max
dB typ
dB typ
pF typ
pF typ
pF typ
RL = 1 kΩ, CL = 35 pF;
VS = ±10 V; see Figure 17
RL = 1 kΩ, CL = 35 pF;
VS = ±10 V; see Figure 17
RL = 1 kΩ, CL = 35 pF;
VS = 0 V, RS = 0 Ω, CL = 1 nF;
VDD = +15 V, VSS = –15 V; see Figure 18
RL = 50 Ω, CL = 5 pF; f = 1 MHz; see Figure 19
RL = 50 Ω, CL = 5 pF; f= 1 MHz; see Figure 20
f = 1 MHz
f = 1 MHz
f = 1 MHz
VDD = +16.5 V, VSS = −16.5 V
Digital Inputs = 0 V or 5 V
170
80
80
0.001
1
0.0001
1
0.001
1
nA max
nA typ
2.5
2.5
2.5
µA max
µA typ
µA max
µA typ
µA max
µA typ
µA max
Temperature range is: B Version: −40°C to +85°C.
Guaranteed by design, not subject to production test.
Rev. B | Page 3 of 16
VL = 5.5 V
ADG441/ADG442/ADG444
Data Sheet
SINGLE SUPPLY1
VDD = +12 V ± 10%, VSS = 0 V, VL = +5 V ± 10% (ADG444), GND = 0 V, unless otherwise noted.
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
RON
+25°C
0 to VDD
70
110
∆RON
RON Match
LEAKAGE CURRENT
Source OFF Leakage IS (OFF)
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
±0.01
±0.5
±0.01
±0.5
±0.08
±0.5
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
DYNAMIC CHARACTERISTICS2
tON
tOFF
tOPEN
Charge Injection
OFF Isolation
Channel-to-Channel Crosstalk
CS (OFF)
CD (OFF)
CD, CS (ON)
POWER REQUIREMENTS
IDD
ADG441/ADG442
ADG444
IL (ADG444 Only)
1
2
B Version
−40°C to +85°C
105
150
40
60
50
2
6
60
100
7
10
16
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
130
4
9
1
3
Test Conditions/Comments
VD = +3 V, +8 V, IS = −5 mA
VDD = 10.8 V
3 V ≤ VD ≤ 8 V
VD = +6 V, IS = −5 mA
VDD = 13.2 V
VD = 12.2 V/1 V, VS = 1 V/12.2 V
See Figure 15
VD = 12.2 V/1 V, VS = 1 V/12.2 V
See Figure 15
VS = VD = 12.2 V/1 V
Figure 16
±3
nA typ
nA max
nA typ
nA max
nA typ
nA max
2.4
0.8
V min
V max
±0.00001
±0.5
µA typ
µA max
VIN = VINL or VINH
ns typ
ns max
ns typ
ns max
ns typ
pC typ
pC max
dB typ
dB typ
pF typ
pF typ
pF typ
RL = 1 kΩ, CL = 35 pF
VS = 8 V; Figure 17
RL = 1 kΩ, CL = 35 pF
VS = 8 V; Figure 17
RL = 1 kΩ, CL = 35 pF
VS = 6 V, RS = 0 Ω, CL = 1 nF
VDD = 12 V, VSS = 0 V; see Figure 18
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 19
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 20
f = 1 MHz
f = 1 MHz
f = 1 MHz
VDD = 13.2 V
Digital Inputs = 0 V or 5 V
±3
±3
220
100
80
0.001
1
0.001
1
Unit
2.5
2.5
µA max
µA typ
µA max
µA typ
µA max
Temperature range is: B Version: −40°C to +85°C.
Guaranteed by design, not subject to production test.
Rev. B | Page 4 of 16
VL = 5.5 V
Data Sheet
ADG441/ADG442/ADG444
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted.
Table 3.
Parameter
VDD to VSS
VDD to GND
VSS to GND
VL to GND
Analog, Digital Inputs
Continuous Current, S or D
Peak Current, S or D (Pulsed at 1 ms,
10% Duty Cycle Max)
Operating Temperature Range
Industrial (B Version)
Storage Temperature Range
Junction Temperature
Lead Temperature, Soldering (10 sec)
Plastic Package, Power Dissipation
θJA, Thermal Impedance
Lead Temperature, Soldering (10 sec)
SOIC Package, Power Dissipation
θJA, Thermal Impedance
Lead Temperature, Soldering
Vapor Phase (60 sec)
Infrared (15 sec)
Rating
44 V
−0.3 V to +25 V
+0.3 V to −25 V
−0.3 V to VDD + 0.3 V
VSS − 2 V to VDD + 2 V
or 30 mA, Whichever
Occurs First
30 mA
100 mA
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Table 4. Truth Table
ADG441/ADG444 IN
0
1
ESD CAUTION
−40°C to +85°C
−65°C to +150°C
150°C
300°C
470 mW
177°C/W
260°C
600 mW
77°C/W
215°C
220°C
Rev. B | Page 5 of 16
ADG442 IN
1
0
Switch Condition
ON
OFF
ADG441/ADG442/ADG444
Data Sheet
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
IN1 1
16 IN2
D1 2
15 D2
S1 3
ADG441
ADG442
VSS 4
14 S2
13 VDD
GND 5
12 NC
TOP VIEW
S4 6 (Not to Scale) 11 S3
10 D3
9
05233-002
D4 7
IN4 8
IN3
NC = NO CONNECT
Figure 2. ADG441/ADG442 (DIP/SOIC)
Table 5. ADG441/ADG442 Pin Function Descriptions
Pin No.
1, 8, 9, 16
2, 7, 10, 15
3, 6, 11, 14
4
Mnemonic
IN1 to IN4
D1 to D4
S1 to S4
VSS
5
12
13
GND
NC
VDD
Description
Logic Control Input.
Drain Terminal. May be an input or output.
Source Terminal. May be an input or output.
Most Negative Power Supply Potential in Dual Supplies. In single-supply applications, it may be connected
to ground.
Ground (0 V) Reference.
No Connect.
Most Positive Power Supply Potential.
IN1 1
16 IN2
D1 2
15 D2
S1 3
ADG444
14 S2
VSS 4
S4 6
11 S3
D4 7
10 D3
IN4 8
9
IN3
05233-003
13 VDD
TOP VIEW
GND 5 (Not to Scale) 12 VL
Figure 3. ADG444 (DIP/SOIC)
Table 6. ADG444 Pin Function Descriptions
Pin No.
1, 8, 9, 16
2, 7, 10, 15
3, 6, 11, 14
4
Mnemonic
IN1 to IN4
D1 to D4
S1 to S4
VSS
5
12
13
GND
VL
VDD
Description
Logic Control Input.
Drain Terminal. May be an input or output.
Source Terminal. May be an input or output.
Most Negative Power Supply Potential in Dual Supplies. In single-supply applications, it may be connected
to ground.
Ground (0 V) Reference.
Logic Power Supply (5 V).
Most Positive Power Supply Potential.
Rev. B | Page 6 of 16
Data Sheet
ADG441/ADG442/ADG444
TYPICAL PERFORMANCE CHARACTERISTICS
100
0.02
VDD = +5V
VSS = –5V
TA = 25°C
LEAKAGE CURRENT (nA)
RON (Ω)
80
VDD = +12V
VSS = –12V
60
VDD = +10V
VSS = –10V
40
VDD = +15V
VSS = –15V
TA = 25°C
ID (OFF)
0.01
0
ID (ON)
IS (OFF)
–0.01
–10
–5
0
VD (VS) (V)
5
10
15
–0.02
–15
05233-005
20
–15
Figure 4. RON as a Function of VD (VS): Dual Supply
170
0
VS (VD) (V)
5
10
15
Figure 7. Leakage Currents as a Function of VS (VD)
VDD = +15V
VSS = –15V
TA = 25°C
110
130
100
CROSSTALK
110
VDD = 10V
VSS = 0V
90
VDD = 12V
VSS = 0V
90
dB
80
70
OFF ISOLATION
70
50
VDD = 15V
VSS = 0V
10
0
3
6
9
12
15
VD (VS) (V)
50
1k
100k
FREQUENCY (Hz)
1M
10M
12
Figure 8. Crosstalk and Off Isolation vs. Frequency
Figure 5. RON as a Function of VD (VS): Single Supply
100
10k
05233-009
60
05233-006
30
05233-010
RON (Ω)
–5
120
VDD = 5V
VSS = 0V
150
–10
05233-008
VDD = +15V
VSS = –15V
120
VDD = +15V
VSS = –15V
VDD = 12V
VSS = 0V
100
80
125°C
125°C
RON (Ω)
85°C
25°C
60
85°C
40
40
25°C
20
–15
–10
–5
0
VD (VS) (V)
5
10
15
05233-007
RON (Ω)
80
60
Figure 6. RON as a Function of VD (VS) for Different Temperatures
20
0
2
4
6
VD (VS) (V)
8
10
Figure 9. RON as a Function of VD (VS) for Different Temperatures
Rev. B | Page 7 of 16
ADG441/ADG442/ADG444
120
VDD = 12V
VSS = 0V
TA = 25°C
VIN = 8V
0.005
100
ID (ON)
tON
IS (OFF)
t (ns)
LEAKAGE CURRENT (nA)
0.010
Data Sheet
0
ID (OFF)
–0.005
80
60
2
4
6
VS, VD (V)
8
10
12
40
±10
Figure 10. Leakage Currents as a Function of VS (VD)
160
30
±20
VIN = 8V
140
20
120
tON
10
VDD = +15V
VSS = –15V
t (ns)
0
100
VDD = 12V
VSS = 0V
–10
80
60
–20
tOFF
40
–30
–12
–9
–6
–3
0
VS (V)
3
6
9
12
15
05233-012
CHARGE INJECTION (pC)
±18
Figure 12. Switching Time vs. Bipolar Supply
TA = 25°C
–40
–15
±14
±16
SUPPLY VOLTAGE (V)
Figure 11. Charge Injection vs. Source Voltage
20
8
10
12
14
16
SUPPLY VOLTAGE (V)
18
Figure 13. Switching Time vs. Single Supply
Rev. B | Page 8 of 16
20
05233-014
40
±12
05233-013
0
05233-011
tOFF
–0.010
Data Sheet
ADG441/ADG442/ADG444
TEST CIRCUITS
IDS
ID (OFF)
VS
D
ID (ON)
S
A
VD
05233-015
S
D
VS
RON = V1/IDS
Figure 14. On Resistance
0.1F
+5V
VD
VDD
VL
VIN
S
Figure 16. On Leakage
3V
0.1F
50%
50%
50%
50%
ADG441/ADG444
D
RL
1k
VS
VOUT
CL
35pF
3V
VIN
ADG442
IN
GND
90%
VSS
90%
VOUT
tON
tOFF
05233-018
0.1F
–15V
Figure 17. Switching Times
+15V
+5V
VDD
VL
3V
S
D
VOUT
CL
1nF
VS
IN
VIN
VOUT
VOUT
GND
VSS
QINJ = CL × VOUT
05233-019
RS
–15V
Figure 18. Charge Injection
Rev. B | Page 9 of 16
A
VS
Figure 15. Off Leakage
+15V
D
05233-017
S
A
05233-016
IS (OFF)
V1
ADG441/ADG442/ADG444
+15V
+5V
VDD
VSS
S
0.1F
0.1F
D
VS
VS
IN
VOUT
VSS
0.1F
–15V
VDD
VSS
0.1F
50
D
VIN1
VIN2
NC
RL
50
GND
VSS
0.1F
05233-021
VIN
+5V
S
VOUT
RL
50
GND
+15V
–15V
CHANNEL-TO-CHANNEL CROSSTALK = 20 × LOG | VS/VOUT |
Figure 19. Off Isolation
Figure 20. Channel-to-Channel Crosstalk
Rev. B | Page 10 of 16
05233-022
0.1F
Data Sheet
Data Sheet
ADG441/ADG442/ADG444
TERMINOLOGY
RON
Ohmic resistance between D and S.
RON Match
Difference between the RON of any two channels.
IS (OFF)
Source leakage current with the switch OFF.
ID (OFF)
Drain leakage current with the switch OFF.
ID, IS (ON)
Channel leakage current with the switch ON.
VD (VS)
Analog voltage on Terminals D, S.
CS (OFF)
OFF switch source capacitance.
CD (OFF)
OFF switch drain capacitance.
tON
Delay between applying the digital control input and the output
switching on.
tOFF
Delay between applying the digital control input and the output
switching off.
tOPEN
Break-before-make delay when switches are configured as a
multiplexer.
Crosstalk
A measure of unwanted signal which is coupled through from
one channel to another as a result of parasitic capacitance.
Off Isolation
A measure of unwanted signal coupling through an OFF switch.
Charge Injection
A measure of the glitch impulse transferred from the digital
input to the analog output during switching.
CD, CS (ON)
ON switch capacitance.
Rev. B | Page 11 of 16
ADG441/ADG442/ADG444
Data Sheet
TRENCH ISOLATION
NMOS
PMOS
P-WELL
N-WELL
LOCO
In junction isolation, the N and P wells of the PMOS and
NMOS transistors form a diode that is reverse-biased under
normal operation. However, during overvoltage conditions, this
diode becomes forward-biased. A silicon-controlled rectifier
(SCR) type circuit is formed by the two transistors causing a
significant amplification of the current which, in turn, leads to
latch-up. With trench isolation, this diode is removed, and the
result is a latch-up proof switch.
TRENCH
BURIED OXIDE LAYER
SUBSTRATE (BACK GATE)
Figure 21. Trench Isolation
Rev. B | Page 12 of 16
05233-004
In the ADG441A, ADG442A, and ADG444A, an insulating
oxide layer (trench) is placed between the NMOS and the
PMOS transistors of each CMOS switch. Parasitic junctions,
which occur between the transistors in junction isolated
switches, are eliminated, and the result is a completely latch-up
proof switch.
Data Sheet
ADG441/ADG442/ADG444
OUTLINE DIMENSIONS
0.775
0.755
0.735
9
16
PIN 1
INDICATOR
0.280
0.250
0.240
1
8
TOP VIEW
0.210
MAX
SIDE VIEW
0.325
0.310
0.300
0.195
0.130
0.115
0.015
MIN
0.150
0.130
0.115
0.022
0.018
0.015
0.070
0.045 0.060
0.039 0.055
0.030
0.015
GAUGE
PLANE
END VIEW
SEATING
PLANE
0.021
0.016
0.011
0.012
0.010
0.008
0.430
MAX
03-07-2014-D
0.100
BSC
COMPLIANT TO JEDEC STANDARDS MS-001-BB
Figure 22. 16-Lead Plastic Dual In-Line Package [PDIP]
Narrow Body
(N-16)
Dimensions shown in inches
10.00 (0.3937)
9.80 (0.3858)
4.00 (0.1575)
3.80 (0.1496)
9
16
1
8
1.27 (0.0500)
BSC
0.25 (0.0098)
0.10 (0.0039)
COPLANARITY
0.10
0.51 (0.0201)
0.31 (0.0122)
6.20 (0.2441)
5.80 (0.2283)
1.75 (0.0689)
1.35 (0.0531)
SEATING
PLANE
0.50 (0.0197)
0.25 (0.0098)
45°
8°
0°
0.25 (0.0098)
0.17 (0.0067)
1.27 (0.0500)
0.40 (0.0157)
Figure 23. 16-Lead Standard Small Outline Package [SOIC_N]
(R-16)
Dimensions shown in millimeters and (inches)
Rev. B | Page 13 of 16
060606-A
COMPLIANT TO JEDEC STANDARDS MS-012-AC
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
ADG441/ADG442/ADG444
Data Sheet
ORDERING GUIDE
Model1, 2
ADG441BNZ
ADG441BR
ADG441BR-REEL
ADG441BRZ
ADG441BRZ-REEL
ADG441ABCHIPS
ADG441ABR-REEL
ADG441ABRZ-REEL
ADG442BNZ
ADG442BRZ
ADG442BRZ-REEL
ADG444BNZ
ADG444BR
ADG444BR-REEL
ADG444BRZ
ADG444BRZ-REEL
1
2
Temperature Range
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
Package Description
16-Lead Plastic Dual In-Line Package [PDIP]
16-Lead Standard Small Outline Package [SOIC_N]
16-Lead Standard Small Outline Package [SOIC_N]
16-Lead Standard Small Outline Package [SOIC_N]
16-Lead Standard Small Outline Package [SOIC_N]
DIE
16-Lead Standard Small Outline Package [SOIC_N]
16-Lead Standard Small Outline Package [SOIC_N]
16-Lead Plastic Dual In-Line Package [PDIP]
16-Lead Standard Small Outline Package [SOIC_N]
16-Lead Standard Small Outline Package [SOIC_N]
16-Lead Plastic Dual In-Line Package [PDIP]
16-Lead Standard Small Outline Package [SOIC_N]
16-Lead Standard Small Outline Package [SOIC_N]
16-Lead Standard Small Outline Package [SOIC_N]
16-Lead Standard Small Outline Package [SOIC_N]
Z = RoHS Compliant Part.
A = Trench isolated.
Rev. B | Page 14 of 16
Package Option
N-16
R-16
R-16
R-16
R-16
R-16
R-16
N-16
R-16
R-16
N-16
R-16
R-16
R-16
R-16
Data Sheet
ADG441/ADG442/ADG444
NOTES
Rev. B | Page 15 of 16
ADG441/ADG442/ADG444
Data Sheet
NOTES
©1994–2014 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D00396-0-5/14(B)
Rev. B | Page 16 of 16