isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUY52A DESCRIPTION ·High Current Capability ·Fast Switching Speed ·Low Saturation Voltage and High Gain APPLICATIONS Designed for use in high frequency and efficiency converters such as motor controllers and industrial equipment such as: ·Switching regulators ·Motor control ·High frequency and efficiency converters Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A ICM Collector Current-Peak 45 A IB Base Current-Continuous 8 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUY52A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 30A; IB= 3A 1.5 V Base-Emitter Saturation Voltage IC= 30A; IB= 3A 2.0 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE DC Current Gain IC= 15A; VCE= 4V Current-Gain—Bandwidth Product IC= 1A ; VCE= 15V VBE(sat) fT isc Website：www.iscsemi.cn CONDITIONS MIN TYP. 20 MAX UNIT 150 10 MHz