AP04N80I-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
G
▼ RoHS Compliant
BVDSS
800V
RDS(ON)
4.5Ω
ID
3.2A
S
Description
AP04N80 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
TO-220CFM type provide high blocking voltage to overcome
voltage surge and sag in the toughest power system with the best
combination of fast switching, ruggedized design and costeffectiveness.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
800
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
3.2
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
1.7
A
12
A
34.7
W
4.5
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
3
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.6
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data & specifications subject to change without notice
1
201310235
AP04N80I-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
800
-
-
V
VGS=10V, ID=1A
-
-
4.5
Ω
VGS=0V, ID=250uA
2
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=1A
-
2
-
S
IDSS
Drain-Source Leakage Current
VDS=640V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=1A
-
18
-
nC
Qgs
Gate-Source Charge
VDS=480V
-
3.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
6
-
nC
td(on)
Turn-on Delay Time
VDD=300V
-
15
-
ns
tr
Rise Time
ID=1A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=50Ω
-
105
-
ns
tf
Fall Time
VGS=10V
-
30
-
ns
Ciss
Input Capacitance
VGS=0V
-
800
1280
pF
Coss
Output Capacitance
VDS=25V
-
55
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
4
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.6
7.2
Ω
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=1A, VGS=0V
-
320
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
1.3
-
µC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
o
3.Starting Tj=25 C , VDD=50V , L=1mH , RG=25Ω, IAS=3A
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP04N80I-HF
4
2
o
10V
9.0V
8.0V
7.0V
V G =6.0V
3
10V
9.0V
8.0V
7.0V
V G =6.0V
o
T C =150 C
2
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 C
2
1
1
1
0
0
0
0
8
16
24
32
0
8
V DS , Drain-to-Source Voltage (V)
16
24
32
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
2
I D =1mA
I D =1A
V G =10V
Normalized RDS(ON)
Normalized BVDSS
1.6
1.2
0.8
2
1
0.4
0
0
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C )
o
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.6
4
I D =1mA
1.4
T j = 25 o C
o
T j = 150 C
IS (A)
Normalized VGS(th)
3
2
1.2
1
0.8
1
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP04N80I-HF
12
f=1.0MHz
1200
1000
V DS =480V
8
800
C (pF)
VGS , Gate to Source Voltage (V)
I D =1A
10
6
600
4
400
2
200
0
0
0
4
8
12
16
20
C iss
C oss
C rss
1
24
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
10
Operation in this area
limited by RDS(ON)
ID (A)
9
V DS , Drain-to-Source Voltage (V)
100us
1
1ms
10ms
100ms
1s
DC
0.1
o
T c =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.01
1
10
100
1000
10000
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) t
f
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4