TI1 BQ24192RGET I2c controlled 4.5-a single cell usb/adapter charger with narrow vdc power path management and usb otg Datasheet

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bq24190, bq24192, bq24192I
SLUSAW5B – JANUARY 2012 – REVISED DECEMBER 2014
bq2419x I2C Controlled 4.5-A Single Cell USB/Adapter Charger
with Narrow VDC Power Path Management and USB OTG
1
1 Features
•
•
•
•
•
•
•
•
•
•
•
High Efficiency 4.5-A Switch Mode Charger
– 92% Charge Efficiency at 2 A, 90% at 4 A
– Accelerate Charge Time by Battery Path
Impedance Compensation
Compatible with MaxLife Technology for Faster
Charging When Used in Conjunction With
bq27531
Highest Battery Discharge Efficiency with 12-mΩ
Battery Discharge MOSFET up to 9-A Discharge
Current
Single Input USB-compliant/Adapter Charger
– USB Host or Charging Port D+/D- Detection
Compatible to USB Battery Charger Spec 1.2
– Input Voltage and Current Limit Supports
USB2.0 and USB3.0
– Input Current Limit: 100 mA, 150 mA, 500 mA,
900 mA, 1.2 A, 1.5 A, 2 A and 3 A
3.9-V to 17-V Input Operating Voltage Range
– Support All Kinds of Adapter with Input Voltage
DPM Regulation
USB OTG 5 V at 1.3-A Synchronous Boost
Converter Operation
– 93% 5-V Boost Efficiency at 1 A
Narrow VDC (NVDC) Power Path Management
– Instant-on Works with No Battery or Deeply
Discharged Battery
– Ideal Diode Operation in Battery Supplement
Mode
1.5-MHz Switching Frequency for Low Profile
Inductor
Autonomous Battery Charging with or without
Host Management
– Battery Charge Enable
– Battery Charge Preconditioning
– Charge Termination and Recharge
High Accuracy (0°C to 125°C)
– ±0.5% Charge Voltage Regulation
– ±7% Charge Current Regulation
– ±7.5% Input Current Regulation
– ±2% Output Regulation in Boost Mode
High Integration
– Power Path Management
– Synchronous Switching MOSFETs
•
•
•
•
– Integrated Current Sensing
– Bootstrap Diode
– Internal Loop Compensation
Safety
– Battery Temperature Sensing and Charging
Safety Timer
– Thermal Regulation and Thermal Shutdown
– Input System Over-Voltage Protection
– MOSFET Over-Current Protection
Charge Status Outputs for LED or Host Processor
Low Battery Leakage Current and Support
Shipping Mode
4.00 mm x 4.00 mm VQFN-24 Package
2 Applications
•
•
•
•
Tablet PC and Smart Phone
Portable Audio Speaker
Portable Media Players
Internet Devices
3 Description
The bq24190, bq24192, and bq24192I are highlyintegrated switch-mode battery charge management
and system power path management devices for
single cell Li-Ion and Li-polymer battery in a wide
range of tablet and other portable devices.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
bq24190
bq24192
VQFN (24)
4.00 mm x 4.00 mm
bq24192I
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
bq24190
5V USB SDP/DCP
1μH
10μF
47nF
6.8μF
USB
SYS: 3.5V-4.35V
SW
VBUS
PMID
1μF
10μF
10μF
10μF
BTST
REGN
D+
4.7μF
D–
SYS
PGND
2.2kW
STAT
VREF
SYS
BAT
10kW
Host
10kW
353W
10μF
(1.5A max)
10kW
SDA
SCL
INT
OTG
CE
ILIM
REGN
5.52kW
TS1
TS2
31.23kW
Power Pad
10kW
(103-AT)
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
bq24190, bq24192, bq24192I
SLUSAW5B – JANUARY 2012 – REVISED DECEMBER 2014
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
9
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Description (Continued) ........................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
4
5
8.1
8.2
8.3
8.4
8.5
8.6
5
6
6
6
6
9
Absolute Maximum Ratings ......................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 12
9.1 Overview ................................................................. 12
9.2 Functional Block Diagram ....................................... 12
9.3 Feature Description................................................. 13
9.4 Device Functional Modes........................................ 27
9.5 Register Map........................................................... 28
10 Application and Implementation........................ 36
10.1 Application Information.......................................... 36
10.2 Typical Application ................................................ 36
11 Power Supply Recommendations ..................... 41
12 Layout................................................................... 41
12.1 Layout Guidelines ................................................. 41
12.2 Layout Example .................................................... 42
13 Device and Documentation Support ................. 43
13.1
13.2
13.3
13.4
13.5
Documentation Support .......................................
Related Links ........................................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
43
43
43
43
43
14 Mechanical, Packaging, and Orderable
Information ........................................................... 44
4 Revision History
Changes from Revision A (October 2012) to Revision B
Page
•
Aligned package description throughout datasheet................................................................................................................ 1
•
Added ESD Ratings, Feature Description, Device Functional Modes, Application and Implementation, Power Supply
Recommendations, Layout, Device and Documentation Support, Mechanical, Packaging, Orderable Information. ........... 1
•
Added Feature: Compatible with MaxLife Technology for Faster Charging When Used in Conjunction With bq27531 ....... 1
•
Changed VSLEEPZ, VBAT_DPL_HY, VBATGD , ICHG_20pct, VSHORT, IADPT_DPM, KILIM, VBTST_REFRESH in Electrical Characteristics.......... 6
•
Added –40°C to 85° to IBAT Test Condition............................................................................................................................. 6
•
Added REG00[6:3] = 0110 (4.36 V) or 1011 (4.76 V) to VINDPM_REG_ACC Test Conditions...................................................... 8
•
Added Typical input current of 1.5 A based on KLIM to IADPT_DPM Test Conditions ............................................................... 8
•
Added a MIN value of 435 to KILIM.......................................................................................................................................... 8
•
Deleted TJunction_REG MIN and MAX ......................................................................................................................................... 8
•
Added rising to VHTF parameter ............................................................................................................................................. 8
•
Deleted VREGN, VVBUS = 5 V, IREGN = 20 mA MAX value ......................................................................................................... 9
•
Changed Functional Block Diagram ..................................................................................................................................... 12
•
Changed Charging Current in Table 4 ................................................................................................................................. 18
•
Changed REG09[5:4] to REG08[5:4] in Charging Termination section ............................................................................... 21
•
Added or when FORCE_20PCT (REG02[0]) bit is set, to Charging Safety Timer description ............................................ 22
•
Added last paragraph to Charging Safety Timer description................................................................................................ 22
•
Added twice to Host Mode and Default Mode description ................................................................................................... 27
•
Changed REG05[5:4]=11 to REG05[5:4]=00 in Host Mode and Default Mode description................................................. 27
•
Changed Charge Current Control Register REG02 Bit 0 description .................................................................................. 31
•
Changed Charge Current Control Register REG02 Bit 0 note............................................................................................. 31
•
Changed REG05 Bit 0 from JEITA ISET (0°C-10°C) to Reserved ...................................................................................... 32
•
Changed REG07 Bit 4 from JEITA_VSET (45°C to 60°C) to Reserved .............................................................................. 33
•
Changed BOOT to BTST in Figure 38 ................................................................................................................................. 37
•
Changed BOOT to BTST in Figure 39 ................................................................................................................................. 37
•
Changed bq24193 to bq24192 in Figure 42......................................................................................................................... 39
2
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Copyright © 2012–2014, Texas Instruments Incorporated
Product Folder Links: bq24190 bq24192 bq24192I
bq24190, bq24192, bq24192I
www.ti.com
SLUSAW5B – JANUARY 2012 – REVISED DECEMBER 2014
5 Description (Continued)
Its low impedance power path optimizes switch-mode operation efficiency, reduces battery charging time and
extends battery life during discharging phase. The I2C serial interface with charging and system settings makes
the device a truly flexible solution.
The device supports a wide range of input sources, including standard USB host port, USB charging port and
high power DC adapter. To set the default input current limit, the bq24190 detects the input source following the
USB battery charging spec 1.2, and the bq24192 and bq24192I take the results from detection circuit in the
system, such as USB PHY device. The bq24190,192, and 192I are compliant with USB 2.0 and USB 3.0 power
specifications with input current and voltage regulation. Meanwhile, the bq24190, bq24192, and bq24192I meet
USB On-the-Go operation power rating specification by supplying 5 V on the VBUS with a current limit up to 1.3
A.
The power path management regulates the system slightly above battery voltage but does not drop below 3.5-V
minimum system voltage (programmable). With this feature, the system maintains operation even when the
battery is completely depleted or removed. When the input current limit or voltage limit is reached, the power
path management automatically reduces the charge current to zero. As the system load continues to increase,
the power path discharges the battery until the system power requirement is met. This supplement mode
operation prevents overloading the input source.
The devices initiate and complete a charging cycle without software control. It automatically detects the battery
voltage and charges the battery in three phases: pre-conditioning, constant current and constant voltage. At the
end of the charging cycle, the charger automatically terminates when the charge current is below a preset limit in
the constant voltage phase. When the full battery falls below the recharge threshold, the charger will
automatically start another charging cycle.
The bq24190, bq24192, and bq24192I provide various safety features for battery charging and system operation,
including dual pack negative thermistor monitoring, charging safety timer and over-voltage/over-current
protections. The thermal regulation reduces charge current when the junction temperature exceeds 120°C
(programmable).
The STAT output reports the charging status and any fault conditions. The PG output in the bq24192 and
bq24192I indicates if a good power source is present. The INT immediately notifies the host when a fault occurs.
The bq24190, bq24192, and bq24192I are available in a 24-pin, 4.00 x 4.00 mm2 thin VQFN package.
6 Device Comparison Table
bq24190
bq24192
bq24192I
6BH
6BH
6BH
I2C Address
USB Detection
D+/D–
PSEL
PSEL
Default VINDPM
4.36 V
4.36 V
4.44 V
Default Battery Voltage
4.208 V
4.208 V
4.112 V
1.024 A
Default Charge Current
2.048 A
2.048 A
Default Adapter Current Limit
1.5 A
3A
1.5 A
Maximum Pre-Charge Current
2.048 A
2.048 A
640 mA
Charging Temperature Profile
Cold/Hot
2 TS pins
Cold/Hot
2 TS pins
Cold/Hot
2 TS pins
Status Output
STAT
STAT, PG
STAT, PG
STAT During Fault
Blinking at 1 Hz
Blinking at1 Hz
10 k to ground
Copyright © 2012–2014, Texas Instruments Incorporated
Product Folder Links: bq24190 bq24192 bq24192I
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SLUSAW5B – JANUARY 2012 – REVISED DECEMBER 2014
www.ti.com
7 Pin Configuration and Functions
VBUS
PMID
REGN
BTST
SW
SW
VBUS
PMID
REGN
BTST
SW
SW
RGE Package
24-Pin VQFN With Exposed Thermal Pad
(Top View)
24
23
22
21
20
19
24
23
22
21
20
19
VBUS
1
18
PGND
VBUS
1
18
PGND
D+
2
17
PGND
PSEL
2
17
PGND
D–
3
16
SYS
16
SYS
15
SYS
PG
3
bq24192
bq24190
STAT
4
15 SYS
STAT
4
bq24192I
BAT
SDA
13 BAT
SDA
6
13
BAT
8
9
10
11
OTG
CE
ILIM
TS1
12
TS2
7
INT
6
7
8
9
10
11
12
TS2
14
TS1
5
ILIM
SCL
CE
BAT
OTG
14
INT
SCL 5
Blue pins indicate difference in pin names/functionality between devices.
Pin Functions
PIN
bq24190
bq24192
bq24192I
NUMBER
TYPE
DESCRIPTION
VBUS
VBUS
1,24
P
Charger Input Voltage. The internal n-channel reverse block MOSFET (RBFET) is connected between VBUS
and PMID with VBUS on source. Place a 1-µF ceramic capacitor from VBUS to PGND and place it as close as
possible to IC. (Refer to Application Information Section for details)
D+
–
2
I
Analog
Positive line of the USB data line pair. D+/D– based USB host/charging port detection. The detection includes
data contact detection (DCD) and primary detection in bc1.2.
–
PSEL
2
I
Digital
Power source selection input. High indicates a USB host source and Low indicates an adapter source.
D–
–
3
I
Analog
Negative line of the USB data line pair. D+/D– based USB host/charging port detection. The detection includes
data contact detection (DCD) and primary detection in bc1.2.
–
PG
3
O
Digital
Open drain active low power good indicator. Connect to the pull up rail via 10-kΩ resistor. LOW indicates a
good input source if the input voltage is between UVLO and ACOV, above SLEEP mode threshold, and current
limit is above 30 mA.
STAT
STAT
4
O
Digital
Open drain charge status output to indicate various charger operation. Connect to the pull up rail via 10-kΩ.
LOW indicates charge in progress. HIGH indicates charge complete or charge disabled. When any fault
condition occurs, STAT pin in bq24190, bq24192 blinks at 1 Hz, and STAT pin in bq24192I has a 10-kΩ
resistor to ground.
SCL
SCL
5
I
Digital
I2C Interface clock. Connect SCL to the logic rail through a 10-kΩ resistor.
SDA
SDA
6
I/O
Digital
I2C Interface data. Connect SDA to the logic rail through a 10-kΩ resistor.
INT
INT
7
O
Digital
Open-drain Interrupt Output. Connect the INT to a logic rail via 10-kΩ resistor. The INT pin sends active low,
256-us pulse to host to report charger device status and fault.
8
I
Digital
9
I
Digital
USB current limit selection pin during buck mode, and active high enable pin during boost mode.
OTG
OTG
In buck mode with USB host (PSEL=High), when OTG = High, IIN limit = 500 mA and when OTG = Low, IIN
limit = 100 mA.
The boost mode is activated when the REG01[5:4] = 10 and OTG pin is High.
CE
4
CE
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Active low Charge Enable pin. Battery charging is enabled when REG01[5:4] = 01 and CE pin = Low. CE pin
must be pulled high or low.
Copyright © 2012–2014, Texas Instruments Incorporated
Product Folder Links: bq24190 bq24192 bq24192I
bq24190, bq24192, bq24192I
www.ti.com
SLUSAW5B – JANUARY 2012 – REVISED DECEMBER 2014
Pin Functions (continued)
PIN
bq24190
bq24192
bq24192I
NUMBER
TYPE
DESCRIPTION
ILIM
ILIM
10
I
Analog
ILIM pin sets the maximum input current limit by regulating the ILIM voltage at 1 V. A resistor is connected from
ILIM pin to ground to set the maximum limit as IINMAX = (1V/RILIM) × 530. The actual input current limit is the
lower one set by ILIM and by I2C REG00[2:0]. The minimum input current programmed on ILIM pin is 500 mA.
TS1
TS1
11
I
Analog
Temperature qualification voltage input #1. Connect a negative temperature coefficient thermistor. Program
temperature window with a resistor divider from REGN to TS1 to GND. Charge suspends when either TS pin is
out of range. Recommend 103AT-2 thermistor.
TS2
TS2
12
I
Analog
Temperature qualification voltage input #2. Connect a negative temperature coefficient thermistor. Program
temperature window with a resistor divider from REGN to TS2 to GND. Charge suspends when either TS pin is
out of range. Recommend 103AT-2 thermistor.
BAT
BAT
13,14
P
Battery connection point to the positive terminal of the battery pack. The internal BATFET is connected
between BAT and SYS. Connect a 10 µF closely to the BAT pin.
SYS
SYS
15,16
P
System connection point. The internal BATFET is connected between BAT and SYS. When the battery falls
below the minimum system voltage, switch-mode converter keeps SYS above the minimum system voltage.
(Refer to Application Information Section for inductor and capacitor selection.)
PGND
PGND
17,18
P
Power ground connection for high-current power converter node. Internally, PGND is connected to the source
of the n-channel LSFET. On PCB layout, connect directly to ground connection of input and output capacitors
of the charger. A single point connection is recommended between power PGND and the analog GND near the
IC PGND pin.
SW
SW
19,20
O
Analog
BTST
BTST
21
P
PWM high side driver positive supply. Internally, the BTST is connected to the anode of the boost-strap diode.
Connect the 0.047-µF bootstrap capacitor from SW to BTST.
REGN
REGN
22
P
PWM low side driver positive supply output. Internally, REGN is connected to the cathode of the boost-strap
diode. Connect a 4.7-µF (10-V rating) ceramic capacitor from REGN to analog GND. The capacitor should be
placed close to the IC. REGN also serves as bias rail of TS1 and TS2 pins.
PMID
PMID
23
O
Analog
Thermal
Pad
–
–
P
Switching node connecting to output inductor. Internally SW is connected to the source of the n-channel
HSFET and the drain of the n-channel LSFET. Connect the 0.047-µF bootstrap capacitor from SW to BTST.
Connected to the drain of the reverse blocking MOSFET and the drain of HSFET. Given the total input
capacitance, connect a 1-µF capacitor on VBUS to PGND, and the rest all on PMID to PGND. (Refer to
Application Information Section for details)
Exposed pad beneath the IC for heat dissipation. Always solder thermal pad to the board, and have vias on the
thermal pad plane star-connecting to PGND and ground plane for high-current power converter.
8 Specifications
8.1 Absolute Maximum Ratings (1)
over operating free-air temperature range (unless otherwise noted)
Voltage range (with
respect to GND)
Output sink current
MIN
MAX
UNIT
VBUS
–2
22
V
PMID
–0.3
22
V
STAT, PG
–0.3
20
V
BTST
–0.3
26
V
–2
20
V
BAT, SYS (converter not switching)
–0.3
6
V
SDA, SCL, INT, OTG, ILIM, REGN, TS1, TS2, CE, PSEL, D+, D–
–0.3
7
V
BTST TO SW
–0.3
–7
V
PGND to GND
–0.3
–0.3
V
6
mA
–40°C
150
°C
–65
150
°C
SW
INT, STAT, PG
Junction temperature
Storage temperature, Tstg
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage
values are with respect to the network ground terminal unless otherwise noted.
Copyright © 2012–2014, Texas Instruments Incorporated
Product Folder Links: bq24190 bq24192 bq24192I
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SLUSAW5B – JANUARY 2012 – REVISED DECEMBER 2014
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8.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
1000
Charged device model (CDM), per JEDEC specification JESD22C101 (2)
250
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
8.3 Recommended Operating Conditions
MIN
MAX
UNIT
3.9
17 (1)
V
3
A
Output current (SYS)
4.5
A
Battery voltage
4.4
V
Fast charging current
4.5
A
6 (continuous)
9 (peak)
(up to 1 sec
duration)
A
85
°C
VIN
Input voltage
IIN
Input current
ISYS
VBAT
IBAT
Discharging current with internal MOSFET
TA
(1)
Operating free-air temperature range
–40
The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the BTST or SW pins. A tight
layout minimizes switching noise.
8.4 Thermal Information
bq2419x
THERMAL METRIC (1)
RθJA
Junction-to-ambient thermal resistance
32.2
RθJCtop
Junction-to-case (top) thermal resistance
29.8
RθJB
Junction-to-board thermal resistance
9.1
ψJT
Junction-to-top characterization parameter
0.3
ψJB
Junction-to-board characterization parameter
9.1
RθJCbot
Junction-to-case (bottom) thermal resistance
2.2
(1)
UNIT
RGE (24 PIN)
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
8.5 Electrical Characteristics
VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = –40°C to 125°C and TJ = 25°C for typical values unless other
noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
QUIESCENT CURRENTS
VVBUS < VUVLO, VBAT = 4.2 V, leakage between
BAT and VBUS
IBAT
Battery discharge current (BAT, SW, SYS)
IVBUS
Input supply current (VBUS)
IOTGBOOST
6
Battery discharge current in boost mode
Submit Documentation Feedback
5
µA
High-Z Mode, or no VBUS, BATFET disabled
(REG07[5] = 1), –40°C to 85°C
12
20
µA
High-Z Mode, or no VBUS, REG07[5] = 0, –40°C
to 85°C
32
55
µA
VVBUS = 5 V, High-Z mode
15
30
µA
VVBUS = 17 V, High-Z mode
30
50
µA
VVBUS > VUVLO, VVBUS > VBAT, converter not
switching
1.5
3
mA
VVBUS > VUVLO, VVBUS > VBAT, converter
switching, VBAT = 3.2 V, ISYS = 0 A
4
mA
VVBUS > VUVLO, VVBUS > VBAT, converter
switching, VBAT = 3.8 V, ISYS = 0 A
15
mA
VBAT = 4.2 V, Boost mode, IVBUS = 0 A,
converter switching
4
mA
Copyright © 2012–2014, Texas Instruments Incorporated
Product Folder Links: bq24190 bq24192 bq24192I
bq24190, bq24192, bq24192I
www.ti.com
SLUSAW5B – JANUARY 2012 – REVISED DECEMBER 2014
Electrical Characteristics (continued)
VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = –40°C to 125°C and TJ = 25°C for typical values unless other
noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VBUS/BAT POWER UP
VVBUS_OP
VBUS operating range
VVBUS_UVLOZ
VBUS for active I2C, no battery
VVBUS rising
3.9
3.6
17
V
VSLEEP
Sleep mode falling threshold
VVBUS falling, VVBUS-VBAT
35
80
120
mV
VSLEEPZ
Sleep mode rising threshold
VVBUS rising, VVBUS-VBAT
VACOV
VBUS over-voltage rising threshold
VVBUS rising
170
250
350
mV
17.4
18
VACOV_HYST
VBUS over-voltage falling hysteresis
VVBUS falling
V
700
mV
VBAT_UVLOZ
Battery for active I2C, no VBUS
VBAT rising
VBAT_DPL
Battery depletion threshold
VBAT falling
2.4
2.6
V
VBAT_DPL_HY
Battery depletion rising hysteresis
VBAT rising
170
260
mV
VVBUSMIN
Bad adapter detection threshold
VVBUS falling
3.8
V
IBADSRC
Bad adapter detection current source
30
mA
tBADSRC
Bad source detection duration
30
ms
V
2.3
V
POWER PATH MANAGEMENT
VSYS_RANGE
Typical system regulation voltage
Isys = 0 A, Q4 off, VBAT up to 4.2 V,
REG01[3:1] = 101, VSYSMIN = 3.5 V
3.5
VSYS_MIN
System voltage output
REG01[3:1] = 101, VSYSMIN = 3.5 V
3.55
RON(RBFET)
Internal top reverse blocking MOSFET onresistance
Measured between VBUS and PMID
23
38
RON(HSFET)
Internal top switching MOSFET on-resistance
between PMID and SW
TJ = –40°C to 85°C
27
35
TJ = -40°C to 125°C
27
45
RON(LSFET)
Internal bottom switching MOSFET on-resistance
between SW and PGND
TJ = –40°C to 85°C
32
45
TJ = -40°C to 125°C
32
48
VFWD
BATFET forward voltage in supplement mode
BAT discharge current 10 mA
30
mV
VSYS_BAT
SYS/BAT Comparator
VSYS falling
90
mV
VBATGD
Battery good comparator rising threshold
VBAT rising
3.55
V
VBATGD_HYST
Battery good comparator falling threshold
VBAT falling
100
mV
4.35
3.65
V
V
mΩ
mΩ
mΩ
BATTERY CHARGER
VBAT_REG_ACC
Charge voltage regulation accuracy
VBAT = 4.112 V and 4.208 V
–0.5%
0.5%
VBAT = 3.8 V, ICHG = 1792 mA, TJ = 25°C
–4%
4%
–7%
7%
IICHG_REG_ACC
Fast charge current regulation accuracy
VBAT = 3.8 V, ICHG = 1792 mA, TJ = –20°C to
125°C
ICHG_20pct
Charge current with 20% option on
VBAT = 3.1 V, ICHG = 104 mA, REG02 = 03
75
100
150
mA
VBATLOWV
Battery LOWV falling threshold
Fast charge to precharge, REG04[1] = 1
2.6
2.8
2.9
V
VBATLOWV_HYST
Battery LOWV rising threshold
Precharge to fast charge, REG04[1] = 1
2.8
3.0
3.1
V
IPRECHG_ACC
Precharge current regulation accuracy
VBAT = 2.6 V, ICHG = 256 mA
–20%
ITERM_ACC
Termination current accuracy
ITERM = 256 mA, ICHG = 960 mA
–20%
VSHORT
Battery Short Voltage
VBAT falling
2.0
V
VSHORT_HYST
Battery Short Voltage hysteresis
VBAT rising
200
mV
ISHORT
Battery short current
VBAT < 2.2V
100
mA
VRECHG
Recharge threshold below VBAT_REG
VBAT falling, REG04[0] = 0
100
mV
tRECHG
Recharge deglitch time
VBAT falling, REG04[0] = 0
20
TJ = 25°C
12
15
TJ = –40°C to 125°C
12
20
RON_BATFET
SYS-BAT MOSFET on-resistance
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20%
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Electrical Characteristics (continued)
VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = –40°C to 125°C and TJ = 25°C for typical values unless other
noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT VOLTAGE/CURRENT REGULATION
VINDPM_REG_ACC
Input voltage regulation accuracy
USB Input current regulation limit, VBUS = 5 V,
current pulled from SW
IUSB_DPM
REG00[6:3] = 0110 (4.36 V) or 1011 (4.76 V)
–2%
2%
USB100
85
100
mA
USB150
125
150
mA
USB500
440
500
mA
USB900
750
900
mA
1.35
IADPT_DPM
Input current regulation accuracy
Typical input current of 1.5 A based on KLIM
IIN_START
Input current limit during system start up
VSYS < 2.2 V
KILIM
IIN = KILIM/RILIM
IINDPM = 1.5 A
1.5
1.65
100
A
mA
AxΩ
435
485
530
0.5
0.6
0.7
V
14
µA
150
µA
D+/D- DETECTION
VD+_SRC
D+ voltage source
ID+_SRC
D+ connection check current source
ID–_SINK
D– current sink
ID_LKG
Leakage current into D+/D–
VD+_LOW
7
50
100
D–, switch open
–1
1
µA
D+, switch open
–1
1
µA
D+ Low comparator threshold
0.7
0.8
V
VD–_LOWdatref
D– Low comparator threshold
250
400
mV
RD–_DWN
D– Pulldown for connection check
14.25
24.8
kΩ
tSDP_DEFAULT
Charging timer with 100-mA USB host in default
mode
45
mins
BAT OVER-VOLTAGE PROTECTION
VBATOVP
Battery over-voltage threshold
VBAT rising, as percentage of VBAT_REG
104%
VBATOVP_HYST
Battery over-voltage hysteresis
VBAT falling, as percentage of VBAT_REG
2%
tBATOVP
Battery over-voltage deglitch time to disable
charge
1
µs
THERMAL REGULATION AND THERMAL SHUTDOWN
TJunction_REG
Junction temperature regulation accuracy
REG06[1:0] = 11
120
°C
TSHUT
Thermal shutdown rising temperature
Temperature increasing
160
°C
TSHUT_HYS
Thermal shutdown hysteresis
30
°C
Thermal shutdown rising deglitch
Temperature increasing delay
1
ms
Thermal shutdown falling deglitch
Temperature decreasing delay
1
ms
COLD/HOT THERMISTER COMPARATOR (bq24190,bq24192,bq24192I)
VLTF
Cold temperature threshold, TS pin voltage rising
threshold
Charger suspends charge. As percentage to
VREGN
73%
73.5
%
74%
VLTF_HYS
Cold temperature hysteresis, TS pin voltage falling
As percentage to VREGN
0.2%
0.4%
0.6%
48.8%
45.2%
VHTF
Hot temperature TS pin voltage rising threshold
As percentage to VREGN
46.6%
47.2
%
VTCO
Cut-off temperature TS pin voltage falling
threshold
As percentage to VREGN
44.2%
44.7
%
Deglitch time for temperature out of range
detection
VTS > VLTF, or VTS < VTCO, or VTS < VHTF
10
ms
7
A
CHARGE OVER-CURRENT COMPARATOR
IHSFET_OCP
HSFET over-current threshold
IBATFET_OCP
System over load threshold
5.3
9
A
CHARGE UNDER-CURRENT COMPARATOR (CYCLE-BY-CYCLE)
VLSFET_UCP
LSFET charge under-current falling threshold
From sync mode to non-sync mode
100
mA
PWM OPERATION
FSW
PWM Switching frequency, and digital clock
DMAX
Maximum PWM duty cycle
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1300
1500
1700
kHz
97%
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Electrical Characteristics (continued)
VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = –40°C to 125°C and TJ = 25°C for typical values unless other
noted.
PARAMETER
VBTST_REFRESH
TEST CONDITIONS
Bootstrap refresh comparator threshold
MIN
TYP
VBTST-VSW when LSFET refresh pulse is
requested, VBUS = 5 V
3.6
VBTST-VSW when LSFET refresh pulse is
requested, VBUS > 6 V
4.5
MAX
UNIT
V
BOOST MODE OPERATION
VOTG_REG
OTG output voltage
I(VBUS) = 0
VOTG_REG_ACC
OTG output voltage accuracy
I(VBUS) = 0
IOTG
OTG mode output current
VOTG_OVP
OTG over-voltage threshold
IOTG_ILIM
LSFET cycle-by-cycle current limit
IOTG_HSZCP
HSFET under current falling threshold
IRBFET_OCP
RBFET over-current threshold
5.00
–2%
REG01[0] = 0
0.5
REG01[0] = 1
1.3
A
A
5.3
3.2
V
2%
5.5
V
4.6
A
100
mA
REG01[0] = 1
1.4
1.8
2.7
REG01[0] = 0
0.6
1.1
1.8
6.4
A
REGN LDO
VREGN
REGN LDO output voltage
IREGN
REGN LDO current limit
VVBUS = 10 V, IREGN = 40 mA
5.6
6
VVBUS = 5 V, IREGN = 20 mA
4.75
4.8
VVBUS = 10 V, VREGN = 3.8 V
V
V
50
mA
LOGIC I/O PIN CHARACTERISTICS (OTG, CE, PSEL, STAT, PG)
VILO
Input low threshold
VIH
Input high threshold
0.4
VOUT_LO
Output low saturation voltage
Sink current = 5 mA
IBIAS
High level leakage current
Pull up rail 1.8 V
1.3
V
V
0.4
V
1
µA
I2C INTERFACE (SDA, SCL, INT)
VIH
Input high threshold level
VPULL-UP = 1.8 V, SDA and SCL
VIL
Input low threshold level
VPULL-UP = 1.8 V, SDA and SCL
1.3
0.4
V
VOL
Output low threshold level
Sink current = 5 mA
0.4
V
IBIAS
High-level leakage current
VPULL-UP = 1.8 V, SDA and SCL
1
µA
fSCL
SCL clock frequency
400
kHz
V
DIGITAL CLOCK AND WATCHDOG TIMER
fHIZ
Digital crude clock
REGN LDO disabled
15
35
50
kHz
fDIG
Digital clock
REGN LDO enabled
1300
1500
1700
kHz
tWDT
REG05[5:4] = 11
REGN LDO enabled
136
160
sec
8.6 Typical Characteristics
Table 1. Table of Figures
FIGURE NO.
System Light Load Efficiency vs System Load Current
Figure 1
SYS Voltage Regulation vs System Load
Figure 2
Charging Efficiency vs Charging Current
Figure 3
Boost Mode Efficiency vs VBUS Load Current
Figure 4
Boost Mode VBUS Voltage Regulation vs VBUS Load Current
Figure 5
SYS Voltage vs Temperature
Figure 6
BAT Voltage vs Temperature
Figure 7
Input Current Limit vs Temperature
Figure 8
Charge Current vs Temperature
Figure 9
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95
3.70
90
3.68
SYS Voltage (V)
Efficiency (%)
SLUSAW5B – JANUARY 2012 – REVISED DECEMBER 2014
85
80
75
3.66
3.64
3.62
VBUS = 5 V
VBUS = 5 V
VBUS = 17 V
VBUS = 9 V
3.60
70
0
100
200
300
400
500
Load Current (mA)
0
600
2
95
4
5
C014
Figure 2. SYS Voltage Regulation vs System Load
100
VBUS = 5 V
VBUS = 7 V
VBUS = 9 V
VBUS = 12 V
VBAT = 3.2 V
VBAT = 3.8 V
95
Efficiency (%)
93
3
System Load Current (A)
Figure 1. System Light Load Efficiency vs System Load
Current
Efficiency (%)
1
C012
91
89
90
85
87
80
85
0
1
2
3
4
Load Current (A)
0
5
500
1000
1500
VBUS Load Current (A)
C011
Figure 3. Charging Efficiency vs Charging Current
C013
Figure 4. Boost Mode Efficiency vs VBUS Load Current
5.04
3.80
5.02
3.75
5.00
SYS Voltage (V)
VBUS Voltage (V)
SYSMIN 3.5 V
4.98
4.96
4.94
3.70
3.65
3.60
VBAT = 3.2 V
4.92
3.55
VBAT = 3.8 V
VBAT = 4.2 V
4.90
0
200
400
3.50
600
800
1000
VBUS Load Current (A)
1200
1400
Figure 5. Boost Mode VBUS Voltage Regulation vs VBUS
Load Current
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±50
0
50
100
Temperature (ƒC)
C005
150
C001
Figure 6. SYS Voltage vs Temperature
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2000
4.25
1800
Input Current Limit (A)
BAT Voltage (V)
4.21
4.17
4.13
4.09
VREG = 4.112 V
1600
1400
1200
1000
IIN = 500 mA
800
IIN = 1.5 A
600
IIN = 2 A
VREG = 4.208 V
400
4.05
–50
0
50
100
±50
150
Temperature (°C)
0
50
100
Temperature (ƒC)
C002
Figure 7. BAT Voltage vs Temperature
150
C003
Figure 8. Input Current Limit vs Temperature
5
4.5
Charge Current (A)
4
3.5
3
2.5
2
1.5
1
TREG 80 C
TREG 120 C
0.5
0
40
50
60
70
80
90
100
110
120
Temperature (°C)
130
C009
Figure 9. Charge Current vs Temperature
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9 Detailed Description
9.1 Overview
The bq24190, bq24192, bq24192I is an I2C controlled power path management device and a single cell Li-Ion
battery charger. It integrates the input reverse-blocking FET (RBFET, Q1), high-side switching FET (HSFET, Q2),
low-side switching FET (LSFET, Q3), and BATFET (Q4) between system and battery. The device also integrates
the bootstrap diode for the high-side gate drive.
9.2 Functional Block Diagram
VBUS
PMID
Q1
V(VBUS_UVLOZ)
UVLO
Q1 Gate
Control
V(BATZ)+V(SLEEP)
SLEEP
REGN
REGN
LDO
EN_HIZ
ACOV
V(AC0V)
BTST
FBO
VBUS
V(OTG_OVP)
VINDPM
VBUS_OVP_BOOST
I(Q2)
I(OTG_HSZCP)
Q2_UCP_BOOST
I(Q3)
I(OTG_ILIM)
Q3_OCP_BOOST
IINDPM
SW
BAT
REGN
BATOVP
V(BAT_REG) x V(BATOVP)
IC TJ
Q2
CONVERTER
CONTROL
BAT
TREG
VBAT_REG
I(LSFET_UCP)
UCP
I(Q2)
Q2_OCP
I(Q3)
SYS
PGND
I(HSFET_OCP)
VSYSMIN
ICHG_REG
Q3
EN_HIZ
EN_CHARGE
EN_BOOST
V(BTST-SW)
REFRESH
V(BTST_REFRESH)
SYS
ICHG
VBAT_REG
ICHG_REG
REF
DAC
I(BADSRC)
BAD_SRC
CONVERTER
CONTROL
TSHUT
STATE
MACHINE
ILIM
D+ (190)
D– (190)
PSEL(192/192I)
USB Host
Adapter
Detection
USB
Adapter
1.5A
BAT
OTG
RECHRG
INT
BAT
V(BATGD)
STAT
bq24192I
PG(192/192I)
I2C
Interface
SCL
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SDA
BATSHORT
bq2419x
V(BAT_REG) - V(RECHG)
BAT
ICHG
ITERM
TERMINATION
CHARGE
CONTROL
SUSPEND
STATE
MACHINE BATLOWV
Q4
IDC
IC TJ
TSHUT
BAT_GD
bq24190/192
Q4 Gate
Control
BATTERY
THERMISTER
SENSING
(bq24190/192/
192I Hot/Cold)
V(BATLOWV)
BAT
TS1
TS2
V(SHORT)
BAT
CE
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9.3 Feature Description
9.3.1 Device Power Up
9.3.1.1 Power-On-Reset (POR)
The internal bias circuits are powered from the higher voltage of VBUS and BAT. When VBUS or VBAT rises
above UVLOZ, the sleep comparator, battery depletion comparator and BATFET driver are active. I2C interface
is ready for communication and all the registers are reset to default value. The host can access all the registers
after POR.
9.3.1.2 Power Up from Battery without DC Source
If only battery is present and the voltage is above depletion threshold (VBAT_DEPL), the BATFET turns on and
connects battery to system. The REGN LDO stays off to minimize the quiescent current. The low RDSON in
BATFET and the low quiescent current on BAT minimize the conduction loss and maximize the battery run time.
The device always monitors the discharge current through BATFET. When the system is overloaded or shorted,
the device will immediately turn off BATFET and keep BATFET off until the input source plugs in again.
9.3.1.2.1 BATFET Turn Off
The BATFET can be forced off by the host through I2C REG07[5]. This bit allows the user to independently turn
off the BATFET when the battery condition becomes abnormal during charging. When BATFET is off, there is no
path to charge or discharge the battery.
When battery is not attached, the BATFET should be turned off by setting REG07[5] to 1 to disable charging and
supplement mode.
9.3.1.2.2 Shipping Mode
When end equipment is assembled, the system is connected to battery through BATFET. There will be a small
leakage current to discharge the battery even when the system is powered off. In order to extend the battery life
during shipping and storage, the device can turn off BATFET so that the system voltage is zero to minimize the
leakage.
In order to keep BATFET off during shipping mode, the host has to disable the watchdog timer (REG05[5:4] =
00) and disable BATFET (REG07[5] = 1) at the same time.
Once the BATFET is disabled, the BATFET can be turned on by plugging in adapter.
9.3.1.3 Power Up from DC Source
When the DC source plugs in, the bq24190, bq24192, bq24192I checks the input source voltage to turn on
REGN LDO and all the bias circuits. It also checks the input current limit before starts the buck converter.
9.3.1.3.1 REGN LDO
The REGN LDO supplies internal bias circuits as well as the HSFET and LSFET gate drive. The LDO also
provides bias rail to TS1/TS2 external resistors. The pull-up rail of STAT and PG can be connected to REGN as
well.
The REGN is enabled when all the conditions are valid.
1. VBUS above UVLOZ
2. VBUS above battery + VSLEEPZ in buck mode or VBUS below battery + VSLEEPZ in boost mode
3. After typical 220ms delay (100ms minimum) is complete
If one of the above conditions is not valid, the device is in high impedance mode (HIZ) with REGN LDO off. The
device draws less than 50 µA from VBUS during HIZ state. The battery powers up the system when the device is
in HIZ.
9.3.1.3.2 Input Source Qualification
After REGN LDO powers up, the bq24190, bq24192, bq24192I checks the current capability of the input source.
The input source has to meet the following requirements to start the buck converter.
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Feature Description (continued)
1. VBUS voltage below 18 V (not in ACOV)
2. VBUS voltage above 3.8 V when pulling 30 mA (poor source detection)
Once the input source passes all the conditions above, the status register REG08[2] goes high and the PG pin
(bq24192, bq24192I) goes low. An INT is asserted to the host.
If the device fails the poor source detection, it will repeat the detection every 2 seconds.
9.3.1.3.3 Input Current Limit Detection
The USB ports on personal computers are convenient charging source for portable devices (PDs). If the portable
device is attached to a USB host, the USB specification requires the portable device to draw limited current (100
mA/500 mA in USB 2.0, and 150 mA/900 mA in USB 3.0). If the portable device is attached to a charging port, it
is allowed to draw up to 1.5 A.
After the PG is LOW or REG08[2] goes HIGH, the charger device always runs input current limit detection when
a DC source plugs in unless the charger is in HIZ during host mode.
The bq24190 follows battery charging specification 1.2 (bc1.2) to detect input source through USB D+/D– lines.
The bq24192 and bq24192I set input current limit through PSEL and OTG pins.
After the input current limit detection is done, the host can write to REG00[2:0] to change the input current limit.
9.3.1.3.4 D+/D– Detection Sets Input Current Limit in bq24190
The bq24190 contains a D+/D– based input source detection to program the input current limit. The D+/Ddetection has two steps: data contact detect (DCD) followed by primary detection.
D+
VDP_SRC
VLGC_HI
IDP_SRC
CHG_DET
VDAC_REF
IDM_SINK
D-
RDM_DWN
Figure 10. USB D+/D- Detection
DCD (Data Contact Detection) uses a current source to detect when the D+/D– pins have made contact during
an attach event. The protocol for data contact detect is as follows:
• Detect VBUS present and REG08[2] = 1 (power good)
• Turn on D+ IDP_SRC and the D– pull-down resistor RDM_DWN for 40 ms
• If the USB connector is properly attached, the D+ line goes from HIGH to LOW, wait up to 0.5 sec.
• Turn off IDP_SRC and disconnect RDM_DWN
The primary detection is used to distinguish between USB host (Standard Down Stream Port, or SDP) and
different type of charging ports (Charging Down Stream Port, or CDP, and Dedicated Charging Port, or DCP).
The protocol for primary detection is as follows:
• Turn on VDP_SRC on D+ and IDM_SINK on D– for 40 ms
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Feature Description (continued)
•
•
If PD is attached to a USB host (SDP), the D– is low. If PD is attached to a charging port (CDP or DCP), the
D– is high
Turn off VDP_SRC and IDM_SINK
Table 2 shows the input current limit setting after D+/D– detection.
Table 2. bq24190 USB D+/D– Detection
D+/D– DETECTION
OTG
INPUT CURRENT LIMIT
REG08[7:6]
0.5 sec timer expired in DCD
(D+/D- floating)
—
100 mA
00
USB host
LOW
100 mA
01
USB host
HIGH
500 mA
01
Charging port
—
1.5 A
10
9.3.1.3.5 PSEL/OTG Pins Set Input Current Limit in bq24192, bq24192I
The bq24192 and bq24192I has PSEL instead of D+/D–. It directly takes the USB PHY device output to decide
whether the input is USB host or charging port.
Table 3. bq24192, bq24192I Input Current Limit Detection
PSEL
OTG
INPUT CURRENT LIMIT
REG08[7:6]
HIGH
LOW
100 mA
01
HIGH
HIGH
500 mA
01
—
1.5 A (bq24192I)
3 A (bq24192)
10
LOW
9.3.1.3.6 HIZ State wth 100mA USB Host
In battery charging spec, the good battery threshold is the minimum charge level of a battery to power up the
portable device successfully. When the input source is 100-mA USB host, and the battery is above bat-good
threshold (VBATGD), the device follows battery charging spec and enters high impedance state (HIZ). In HIZ state,
the device is in the lowest quiescent state with REGN LDO and the bias circuits off. The charger device sets
REG00[7] to 1, and the VBUS current during HIZ state will be less than 30 µA. The system is supplied by the
battery.
Once the charger device enters HIZ state in host mode, it stays in HIZ until the host writes REG00[7] = 0. When
the processor host wakes up, it is recommended to first check if the charger is in HIZ state.
In default mode, the charger IC will reset REG00[7] back to 0 when input source is removed. When another
source plugs in, the charger IC will run detection again, and update the input current limit.
9.3.1.3.7 Force Input Current Limit Detection
The host can force the charger device to run input current limit detection by setting REG07[7] = 1. After the
detection is complete, REG07[7] will return to 0 by itself.
9.3.1.4 Converter Power-Up
After the input current limit is set, the converter is enabled and the HSFET and LSFET start switching. If battery
charging is disabled, BATFET turns off. Otherwise, BATFET stays on to charge the battery.
The bq24190, bq24192, bq24192I provides soft-start when ramp up the system rail. When the system rail is
below 2.2 V, the input current limit is forced to 100 mA. After the system rises above 2.2 V, the charger device
sets the input current limit set by the lower value between register and ILIM pin.
As a battery charger, the bq24190, bq24192, bq24192I deploys a 1.5-MHz step-down switching regulator. The
fixed frequency oscillator keeps tight control of the switching frequency under all conditions of input voltage,
battery voltage, charge current and temperature, simplifying output filter design.
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A type III compensation network allows using ceramic capacitors at the output of the converter. An internal sawtooth ramp is compared to the internal error control signal to vary the duty cycle of the converter. The ramp
height is proportional to the PMID voltage to cancel out any loop gain variation due to a change in input voltage.
In order to improve light-load efficiency, the device switches to PFM control at light load when battery is below
minimum system voltage setting or charging is disabled. During the PFM operation, the switching duty cycle is
set by the ratio of SYS and VBUS.
9.3.1.5 Boost Mode Operation from Battery
The bq24190, bq24192, bq24192I supports boost converter operation to deliver power from the battery to other
portable devices through USB port. The boost mode output current rating meets the USB On-The-Go 500-mA
output requirement. The maximum output current is 1.3 A. The boost operation can be enabled if the following
conditions are valid:
1. BAT above BATLOWV threshold (VBATLOWV set by REG04[1])
2. VBUS less than BAT+VSLEEP (in sleep mode)
3. Boost mode operation is enabled (OTG pin HIGH and REG01[5:4] = 10)
4. After 220-ms delay from boost mode enable
In boost mode, the bq24190, bq24192, bq24192I employs a 1.5-MHz step-up switching regulator. Similar to buck
operation, the device switches from PWM operation to PFM operation at light load to improve efficiency.
During boost mode, the status register REG08[7:6] is set to 11, the VBUS output is 5 V and the output current
can reach up to 500 mA or 1.3 A, selected via I2C (REG01[0]).
Any fault during boost operation, including VBUS over-voltage or over-current, sets the fault register REG09[6] to
1 and an INT is asserted.
9.3.2 Power Path Management
The bq24190, bq24192, bq24192I accommodates a wide range of input sources from USB, wall adapter, to car
battery. The device provides automatic power path selection to supply the system (SYS) from input source
(VBUS), battery (BAT), or both.
9.3.2.1 Narrow VDC Architecture
The device deploys Narrow VDC architecture (NVDC) with BATFET separating system from battery. The
minimum system voltage is set by REG01[3:1]. Even with a fully depleted battery, the system is regulated above
the minimum system voltage (default 3.5 V).
When the battery is below minimum system voltage setting, the BATFET operates in linear mode (LDO mode),
and the system is 150 mV above the minimum system voltage setting. As the battery voltage rises above the
minimum system voltage, BATFET is fully on and the voltage difference between the system and battery is the
VDS of BATFET.
When the battery charging is disabled or terminated, the system is always regulated at 150 mV above the
minimum system voltage setting. The status register REG08[0] goes high when the system is in minimum system
voltage regulation.
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4.5
4.3
Charge Enabled
4.1
SYS
(V)
Charge Disabled
3.9
3.7
3.5
Minimum System Voltage
3.3
3.1
2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3
BAT (V)
Figure 11. V(SYS) vs V(BAT)
9.3.2.2 Dynamic Power Management
To meet maximum current limit in USB spec and avoid over loading the adapter, the bq24190, bq24192,
bq24192I features Dynamic Power Management (DPM), which continuously monitors the input current and input
voltage.
When input source is over-loaded, either the current exceeds the input current limit (REG00[2:0]) or the voltage
falls below the input voltage limit (REG00[6:3]). The device then reduces the charge current until the input current
falls below the input current limit and the input voltage rises above the input voltage limit.
When the charge current is reduced to zero, but the input source is still overloaded, the system voltage starts to
drop. Once the system voltage falls below the battery voltage, the device automatically enters the supplement
mode where the BATFET turns on and battery starts discharging so that the system is supported from both the
input source and battery.
During DPM mode (either VINDPM or IINDPM), the status register REG08[3] will go high.
Figure 12 shows the DPM response with 9-V/1.2-A adapter, 3.2-V battery, 2.8-A charge current and 3.4-V
minimum system voltage setting.
Voltage
VBUS
9V
SYS
3.6V
3.4V
3.2V
3.18V
BAT
Current
4A
ICHG
3.2A
2.8A
ISYS
1.2A
1.0A
0.5A
IIN
-0.6A
DPM
DPM
Supplement
Figure 12. DPM Response
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9.3.2.3 Supplement Mode
When the system voltage falls below the battery voltage, the BATFET turns on and the BATFET gate is
regulated the gate drive of BATFET so that the minimum BATFET VDS stays at 30 mV when the current is low.
This prevents oscillation from entering and exiting the supplement mode. As the discharge current increases, the
BATFET gate is regulated with a higher voltage to reduce RDSON until the BATFET is in full conduction. At this
point onwards, the BATFET VDS linearly increases with discharge current. Figure 13 shows the V-I curve of the
BATFET gate regulation operation. BATFET turns off to exit supplement mode when the battery is below battery
depletion threshold.
4.5
4.0
CURRENT (A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
5
10
15
20
25
30
35
40
45
50
55
V(BAT-SYS) (mV)
Figure 13. BATFET V-I Curve
9.3.3 Battery Charging Management
The bq24190, bq24192, bq24192I charges 1-cell Li-Ion battery with up to 4.5A charge current for high capacity
tablet battery. The 12-mΩ BATFET improves charging efficiency and minimizes the voltage drop during
discharging.
9.3.3.1 Autonomous Charging Cycle
With battery charging enabled at POR (REG01[5:4] = 01), the bq24190, bq24192, bq24192I can complete a
charging cycle without host involvement. The device default charging parameters are listed in Table 4.
Table 4. Charging Parameter Default Setting
(1)
A
•
•
•
•
•
DEFAULT MODE
bq24190, bq24192
bq24192I
Charging voltage
4.208 V
4.112 V
Charging Current
2.048 A
1.024 A
Pre-charge current
256 mA
256 mA
Termination current
256 mA
256 mA
Temperature profile
Hot/Cold
Hot/Cold
Safety timer
8 hours (1)
8 hours (1)
See section Charging Safety Timer for more information.
new charge cycle starts when the following conditions are valid:
Converter starts
Battery charging is enabled by I2C register bit (REG01[5:4]) = 01 and CE is low
No thermistor fault on TS1 and TS2
No safety timer fault
BATFET is not forced to turn off (REG07[5])
The charger device automatically terminates the charging cycle when the charging current is below termination
threshold and charge voltage is above recharge threshold. When a full battery voltage is discharged below
recharge threshold (REG04[0]), the bq24190, bq24192, bq24192I automatically starts another charging cycle.
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The STAT output indicates the charging status of charging (LOW), charging complete or charge disable (HIGH)
or charging fault (Blinking). The status register REG08[5:4] indicates the different charging phases: 00-charging
disable, 01-precharge, 10-fast charge (constant current) and constant voltage mode, 11-charging done. Once a
charging cycle is complete, an INT is asserted to notify the host.
The host can always control the charging operation and optimize the charging parameters by writing to the
registers through I2C.
9.3.3.2 Battery Charging Profile
The device charges the battery in three phases: preconditioning, constant current and constant voltage. At the
beginning of a charging cycle, the device checks the battery voltage and applies current.
Table 5. Charging Current Setting
VBAT
CHARGING CURRENT
REG DEFAULT SETTING
REG08[5:4]
<2V
100 mA
–
01
2V-3V
REG03[7:4]
256 mA
01
>3V
REG02[7:2]
2048 mA (bq24190/192) 1024 mA (bq24192I)
10
If the charger device is in DPM regulation or thermal regulation during charging, the actual charging current will
be less than the programmed value. In this case, termination is temporarily disabled and the charging safety
timer is counted at half the clock rate.
Regulation Voltage
(3.5V – 4.4V)
Battery Voltage
Fast Charge Current
(500mA-4020mA)
Charge Current
VBAT_LOWV (2.8V/3V)
VBAT_SHORT (2V)
IPRECHARGE (128mA-2048mA)
ITERMINATION (128mA-2048mA)
IBATSHORT (100mA)
Trickle Charge
Pre-charge
Fast Charge and Voltage Regulation
Safety Timer
Expiration
Figure 14. Battery Charging Profile
9.3.3.3 Battery Path Impedance IR Compensation
To speed up the charging cycle, we would like to stay in constant current mode as long as possible. In real
system, the parasitic resistance, including routing, connector, MOSFETs and sense resistor in the battery pack,
may force the charger device to move from constant current loop to constant voltage loop too early, extending
the charge time.
The bq24190, bq24192, bq24192I allows the user to compensate for the parasitic resistance by increasing the
voltage regulation set point according to the actual charge current and the resistance. For safe operation, the
user should set the maximum allowed regulation voltage to REG06[4:2], and the minimum trace parasitic
resistance (REG06[7:5]).
(
)
VBATREG_ACTUAL = VBATREG_I2C + lower of ICHRG_ACTUAL × RCOMP and VCLAMP
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9.3.3.4 Thermistor Qualification
The high capacity battery usually has two or more single cells in parallel. The bq24190, bq24192, bq24192I
provides two TS pins to monitor the thermistor (NTC) in each cell independently.
9.3.3.4.1 Cold/Hot Temperature Window
The bq24190, bq24192, bq24192I continuously monitors battery temperature by measuring the voltage between
the TS pins and ground, typically determined by a negative temperature coefficient thermistor and an external
voltage divider. The device compares this voltage against its internal thresholds to determine if charging is
allowed. To initiate a charge cycle, the battery temperature must be within the VLTF to VHTF thresholds. During the
charge cycle the battery temperature must be within the VLTF to VTCO thresholds, else the device suspends
charging and waits until the battery temperature is within the VLTF to VHTF range.
REGN
bq2419x
RT1
TS
RT2
RTH
103AT
Figure 15. TS Resistor Network
When the TS fault occurs, the fault register REG09[2:0] indicates the actual condition on each TS pin and an INT
is asserted to the host. The STAT pin indicates the fault when charging is suspended.
TEMPERATURE RANGE TO
INITIATE CHARGE
TEMPERATURE RANGE
DURING A CHARGE CYCLE
VREF
VREF
CHARGE SUSPENDED
CHARGE SUSPENDED
VLTF
VLTF
VLTFH
VLTFH
CHARGE at full C
CHARGE at full C
VHTF
VTCO
CHARGE SUSPENDED
CHARGE SUSPENDED
AGND
AGND
Figure 16. TS Pin Thermistor Sense Thresholds
Assuming a 103AT NTC thermistor is used on the battery pack, the value RT1 and RT2 can be determined by
using the following equations:
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æ 1
1 ö
VVREF ´ RTHCOLD ´ RTHHOT ´ ç
÷
è VLTF VTCO ø
RT2 =
æV
ö
æV
ö
RTHHOT ´ ç VREF - 1÷ - RTHCOLD ´ ç VREF - 1÷
è VLTF
ø
è VTCO
ø
VVREF
-1
VLTF
RT1 =
1
1
+
RT2 RTHCOLD
(2)
Select 0°C to 45°C range for Li-ion or Li-polymer battery,
RTHCOLD = 27.28 kΩ
RTHHOT = 4.911 kΩ
RT1 = 5.52 kΩ
RT2 = 31.23 kΩ
9.3.3.5 Charging Termination
The bq24190, bq24192, bq24192I terminates a charge cycle when the battery voltage is above recharge
threshold, and the current is below termination current. After the charging cycle is complete, the BATFET turns
off. The converter keeps running to power the system, and BATFET can turn back on to engage supplement
mode.
When termination occurs, the status register REG08[5:4] is 11, and an INT is asserted to the host. Termination is
temporarily disabled if the charger device is in input current/voltage regulation or thermal regulation. Termination
can be disabled by writing 0 to REG05[7].
9.3.3.5.1 Termination when REG02[0] = 1
When REG02[0] is HIGH to reduce the charging current by 80%, the charging current could be less than the
termination current. The charger device termination function should be disabled. When the battery is charged to
fully capacity, the host disables charging through CE pin or REG01[5:4].
9.3.3.5.2 Termination when REG05[6] = 1
Usually the STAT bit indicates charging complete when the charging current falls below termination threshold.
Write REG05[6] = 1 to enable an early “charge done” indication on STAT pin. The STAT pin goes high when the
charge current reduces below 800 mA. The charging cycle is still on-going until the current falls below the
termination threshold.
9.3.3.6 Charging Safety Timer
The bq24190, bq24192, bq24192I has safety timer to prevent extended charging cycle due to abnormal battery
conditions.
In default mode, the device keeps charging the battery with 5-hour fast charging safety timer regardless of
REG05[2:1] default value. At the end of the 5 hours, the EN_HIZ (REG00[7]) is set to signal the buck converter
stops and the system load is supplied by the battery. The EN_HIZ bit can be cleared to restart the buck
converter.
In host mode, the device keeps charging the battery until the fast charging safety timer expired. The duration of
safety timer can be set by the REG05[2:1] bits (default = 8 hours). At the end of safety timer, the EN_HIZ
(REG00[7]) is cleared to signal the buck converter continues to operation to supply system load.
The safety timer is 1 hour when the battery is below BATLOWV threshold. The user can program fast charge
safety timer through I2C (REG05[2:1]). When safety timer expires, the fault register REG09[5:4] goes 11 and an
INT is asserted to the host. The safety timer feature can be disabled via I2C (REG05[3]).
The following actions restart the safety timer:
• At the beginning of a new charging cycle
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•
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Toggle the CE pin HIGH to LOW to HIGH (charge enable)
Write REG01[5:4] from 00 to 01 (charge enable)
Write REG05[3] from 0 to 1 (safety timer enable)
During input voltage/current regulation or thermal regulation, or when FORCE_20PCT (REG02[0]) bit is set, the
safety timer counts at half clock rate since the actual charge current is likely to be below the register setting. For
example, if the charger is in input current regulation (IINDPM) throughout the whole charging cycle, and the
safety time is set to 5 hours, the safety timer will expire in 10 hours. This feature can be disabled by writing 0 to
REG07[6].
It is recommended to disable safety timer first by clearing REG05[3] bit before safety timer configuration is
changed. The safety timer should be re-enabled by setting REG05[3] bit.
9.3.3.7 USB Timer when Charging from USB100mA Source
The total charging time in default mode from USB100-mA source is limited by a 45-min max timer. At the end of
the timer, the device stops the converter and goes to HIZ.
9.3.4 Status Outputs (PG, STAT, and INT)
9.3.4.1 Power Good Indicator (PG)
In bq24192, bq24192I, PG goes LOW to indicate a good input source when:
1. VBUS above UVLO
2. VBUS above battery (not in sleep)
3. VBUS below ACOV threshold
4. VBUS above 3.8 V when 30-mA current is applied (not a poor source)
9.3.4.2 Charging Status Indicator (STAT)
The bq24190, bq24192, bq24192I indicates charging state on the open drain STAT pin. The STAT pin can drive
LED as the application diagram shows.
Table 6. STAT Pin State
CHARGING STATE
STAT
Charging in progress (including recharge)
LOW
Charging complete
HIGH
Sleep mode, charge disable
HIGH
Charge suspend (Input over-voltage, TS fault, timer fault, input or system overvoltage)
blinking at 1Hz (bq24190, bq24192)
or 10-kΩ pull down (bq24192I)
When a fault occurs, instead of blinking, the STAT pin in bq24192I has a 10-kΩ pull-down resistor to ground.
When the pull-up resistor is 30 kΩ, the STAT voltage during fault is 1/4 of the pull-up rail.
9.3.4.3 Interrupt to Host (INT)
In some applications, the host does not always monitor the charger operation. The INT notifies the system on the
device operation. The following events will generate 256-us INT pulse.
• USB/adapter source identified (through PSEL or DPDM detection, with OTG pin)
• Good input source detected
– VVBUS - VBAT > VSLEEPZ
– VVBUS > VACOV
– current limit above IBADSRC
• Input removed
• Charge Complete
• Any FAULT event in REG09
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When a fault occurs, the charger device sends out INT and keeps the fault state in REG09 until the host reads
the fault register. Before the host reads REG09 and all the faults are cleared, the charger device would not send
any INT upon new faults. In order to read the current fault status, the host has to read REG09 two times
consecutively. The 1st reads fault register status from the last read and the 2nd reads the current fault register
status.
9.3.5 Protections
9.3.5.1 Input Current Limit on ILIM
For safe operation, the bq24190, bq24192, bq24192I has an additional hardware pin on ILIM to limit maximum
input current on ILIM pin. The input maximum current is set by a resistor from ILIM pin to ground as:
1V
IINMAX =
´ 530
RILIM
(3)
The actual input current limit is the lower value between ILIM setting and register setting (REG00[2:0]). For
example, if the register setting is 111 for 3 A, and ILIM has a 353-Ω resistor to ground for 1.5 A, the input current
limit is 1.5 A. ILIM pin can be used to set the input current limit rather than the register settings.
The device regulates ILIM pin at 1 V. If ILIM voltage exceeds 1 V, the device enters input current regulation
(Refer to Dynamic Power Path Management section).
The voltage on the ILIM pin is proportional to the input current. The ILIM pin can be used to monitor the input
current per Equation 4:
V
IIN = ILIM ´ IINMAX
(4)
1V
For example, if the ILIM pin sets 2 A, and the ILIM voltage is 0.6 V, the actual input current is 1.2 A. If the ILIM
pin is open, the input current is limited to zero since ILIM voltage floats above 1 V. If the ILIM pin is short, the
input current limit is set by the register.
9.3.5.2 Thermal Regulation and Thermal Shutdown
The bq24190, bq24192, bq24192I monitors the internal junction temperature TJ to avoid overheat the chip and
limits the IC surface temperature. When the internal junction temperature exceeds the preset limit (REG06[1:0]),
the device lowers down the charge current. The wide thermal regulation range from 60°C to 120°C allows the
user to optimize the system thermal performance.
During thermal regulation, the actual charging current is usually below the programmed battery charging current.
Therefore, termination is disabled, the safety timer runs at half the clock rate, and the status register REG08[1]
goes high.
Additionally, the device has thermal shutdown to turn off the converter. The fault register REG09[5:4] is 10 and
an INT is asserted to the host.
9.3.5.3 Voltage and Current Monitoring in Buck Mode
The bq24190, bq24192, bq24192I closely monitor the input and system voltage, as well as HSFET and LSFET
current for safe buck mode operation.
9.3.5.3.1 Input Over-Voltage (ACOV)
The maximum input voltage for buck mode operation is 18 V. If VBUS voltage exceeds 18 V, the device stops
switching immediately. During input over voltage (ACOV), the fault register REG09[5:4] will be set to 01. An INT
is asserted to the host.
9.3.5.3.2 System Over-Voltage Protection (SYSOVP)
The charger device monitors the voltage at SYS. When system over-voltage is detected, the converter is stopped
to protect components connected to SYS from high voltage damage.
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9.3.5.4 Voltage and Current Monitoring in Boost Mode
The bq24190, bq24192, bq24192I closely monitors the VBUS voltage, as well as HSFET and LSFET current to
ensure safe boost mode operation.
9.3.5.4.1 VBUS Over-Voltage Protection
The boost mode regulated output is 5 V. When an adapter plugs in during boost mode, the VBUS voltage will
rise above regulation target. Once the VBUS voltage exceeds 5.3 V, the bq24190, bq24192, bq24192I stops
switching and the device exits boost mode. The fault register REG09[6] is set high to indicate fault in boost
operation. An INT is asserted to the host.
9.3.5.5 Battery Protection
9.3.5.5.1 Battery Over-Current Protection (BATOVP)
The battery over-voltage limit is clamped at 4% above the battery regulation voltage. When battery over voltage
occurs, the charger device immediately disables charge. The fault register REG09[5] goes high and an INT is
asserted to the host.
9.3.5.5.2 Charging During Battery Short Protection
If the battery voltage falls below 2 V, the charge current is reduced to 100 mA for battery safety.
9.3.5.5.3 System Over-Current Protection
If the system is shorted or exceeds the over-current limit, the BATFET is latched off. DC source insertion on
VBUS is required to reset the latch-off condition and turn on BATFET.
9.3.6 Serial Interface
The bq24190, bq24192, bq24192I uses I2C compatible interface for flexible charging parameter programming
and instantaneous device status reporting. I2C is a bi-directional 2-wire serial interface developed by Philips
Semiconductor (now NXP Semiconductors). Only two bus lines are required: a serial data line (SDA) and a serial
clock line (SCL). Devices can be considered as masters or slaves when performing data transfers. A master is
the device which initiates a data transfer on the bus and generates the clock signals to permit that transfer. At
that time, any device addressed is considered a slave.
The device operates as a slave device with address 6BH, receiving control inputs from the master device like
micro controller or a digital signal processor. The I2C interface supports both standard mode (up to 100 kbits),
and fast mode (up to 400 kbits).
Both SDA and SCL are bi-directional lines, connecting to the positive supply voltage via a current source or pullup resistor. When the bus is free, both lines are HIGH. The SDA and SCL pins are open drain.
9.3.6.1 Data Validity
The data on the SDA line must be stable during the HIGH period of the clock. The HIGH or LOW state of the
data line can only change when the clock signal on the SCL line is LOW. One clock pulse is generated for each
data bit transferred.
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SDA
SCL
Change
of data
allowed
Data line stable;
Data valid
Figure 17. Bit Transfer on the I2C Bus
9.3.6.2 START and STOP Conditions
All transactions begin with a START (S) and can be terminated by a STOP (P). A HIGH to LOW transition on the
SDA line while SCl is HIGH defines a START condition. A LOW to HIGH transition on the SDA line when the
SCL is HIGH defines a STOP condition.
START and STOP conditions are always generated by the master. The bus is considered busy after the START
condition, and free after the STOP condition.
SDA
SDA
SCL
SCL
STOP (P)
START (S)
Figure 18. START and STOP conditions
9.3.6.3 Byte Format
Every byte on the SDA line must be 8 bits long. The number of bytes to be transmitted per transfer is
unrestricted. Each byte has to be followed by an Acknowledge bit. Data is transferred with the Most Significant
Bit (MSB) first. If a slave cannot receive or transmit another complete byte of data until it has performed some
other function, it can hold the clock line SCL low to force the master into a wait state (clock stretching). Data
transfer then continues when the slave is ready for another byte of data and release the clock line SCL.
Acknowledgement
signal from receiver
Acknowledgement
signal from slave
MSB
SDA
SCL
S or Sr
1
2
7
START or
Repeated
START
8
9
ACK
1
2
8
9
ACK
P or Sr
STOP or
Repeated
START
Figure 19. Data Transfer on the I2C Bus
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9.3.6.4 Acknowledge (ACK) and Not Acknowledge (NACK)
The acknowledge takes place after every byte. The acknowledge bit allows the receiver to signal the transmitter
that the byte was successfully received and another byte may be sent. All clock pulses, including the
acknowledge 9th clock pulse, are generated by the master.
The transmitter releases the SDA line during the acknowledge clock pulse so the receiver can pull the SDA line
LOW and it remains stable LOW during the HIGH period of this clock pulse.
When SDA remains HIGH during the 9th clock pulse, this is the Not Acknowledge signal. The master can then
generate either a STOP to abort the transfer or a repeated START to start a new transfer.
9.3.6.5 Slave Address and Data Direction Bit
After the START, a slave address is sent. This address is 7 bits long followed by the eighth bit as a data direction
bit (bit R/W). A zero indicates a transmission (WRITE) and a one indicates a request for data (READ).
SDA
SCL
S
1-7
8
9
START
ADDRESS
R/W
ACK
8
1-7
9
8
1-7
ACK
DATA
DATA
9
P
ACK
STOP
Figure 20. Complete Data Transfer
9.3.6.5.1 Single Read and Write
1
7
S
Slave Address
1
0
8
1
8
1
1
Reg Addr
ACK
Data Addr
ACK
P
1
ACK
Figure 21. Single Write
1
7
1
1
8
1
1
7
1
1
S
Slave Address
0
ACK
Reg Addr
ACK
S
Slave Address
1
ACK
8
1
1
Data
NCK
P
Figure 22. Single Read
If the register address is not defined, the charger IC send back NACK and go back to the idle state.
9.3.6.5.2 Multi-Read and Multi-Write
The charger device supports multi-read and multi-write on REG00 through REG08.
1
7
1
1
8
1
S
Slave Address
0
ACK
Reg Addr
ACK
8
1
8
1
8
1
1
Slave Address
ACK
Data to Addr+1
ACK
Data to Addr+1
ACK
P
Figure 23. Multi-Write
26
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1
7
1
1
8
1
1
7
1
1
S
Slave Address
0
ACK
Reg Addr
ACK
S
Slave Address
1
ACK
8
Data @ Addr
1
8
1
8
1
1
ACK
Data @ Addr+1
ACK
Data @ Addr+1
ACK
P
Figure 24. Multi-Read
The fault register REG09 locks the previous fault and only clears it after the register is read. For example, if
Charge Safety Timer Expiration fault occurs but recovers later, the fault register REG09 reports the fault when it
is read the first time, but returns to normal when it is read the second time. To verify real time fault, the fault
register REG09 should be read twice to get the real condition. In addition, the fault register REG09 does not
support multi-read or multi-write.
9.4 Device Functional Modes
9.4.1 Host Mode and Default Mode
The bq24190, bq24192, bq24192I is a host controlled device, but it can operate in default mode without host
management. In default mode, bq24190, bq24192, bq24192I can be used as an autonomous charger with no
host or with host in sleep.
When the charger is in default mode, REG09[7] is HIGH. When the charger is in host mode, REG09[7] is LOW.
After power-on-reset, the device starts in watchdog timer expiration state, or default mode. All the registers are in
the default settings.
Any write command to bq24190, bq24192, bq24192I transitions the device from default mode to host mode. All
the device parameters can be programmed by the host. To keep the device in host mode, the host has to reset
the watchdog timer by writing 1 twice to REG01[6] before the watchdog timer expires (REG05[5:4]), or disable
watchdog timer by setting REG05[5:4] = 00.
POR
watchdog timer expired
Reset registers
I2C interface enabled
Host Mode
Y
I2C Write?
Start watchdog timer
Host programs registers
N
Default Mode
Reset watchdog timer
Reset registers
N
Reset REG01
bit[6]?
Y
Y
N
I2C Write?
Y
Watchdog Timer
Expired?
N
Figure 25. Watchdog Timer Flow Chart
9.4.1.1 Plug in USB100mA Source with Good Battery
When the input source is detected as 100-mA USB host, and the battery voltage is above batgood threshold
(VBATGD), the charger device enters HIZ state to meet the battery charging spec requirement.
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Device Functional Modes (continued)
If the charger device is in host mode, it will stay in HIZ state even after the USB100-mA source is removed, and
the adapter plugs in. During the HIZ state, REG00[7] is set HIGH and the system load is supplied from battery. It
is recommended that the processor host always checks if the charger IC is in HIZ state when it wakes up. The
host can write REG00[7] to 0 to exit HIZ state.
If the charger is in default mode, when the DC source is removed, the charger device will get out of HIZ state
automatically. When the input source plugs in again, the charger IC runs detection on the input source and
update the input current limit.
9.4.1.2 USB Timer when Charging from USB 100-mA Source
The total charging time in default mode from USB 100-mA source is limited by a 45-min max timer. At the end of
the timer, the device stops the converter and goes to HIZ.
9.5 Register Map
Table 7. Register Map
REGISTER
28
REGISTER NAME
RESET
REG00
Input Source Control Register
bq24190, bq24192: 00110000, or 30
bq24192I: 00111000, or 38
REG01
Power-On Configuration Register
00011011, or 1B
REG02
Charge Current Control Register
bq24190, bq24192: 01100000, or 60
bq24192I: 00100000, or 20
REG03
Pre-Charge/Termination Current Control Register
00010001, or 11
REG04
Charge Voltage Control Register
bq24190, bq241192: 10110010, or B2
bq24192I: 10011010, or 9A
REG05
Charge Termination/Timer Control Register
10011010, or 9A
REG06
IR Compensation / Thermal Regulation Control Register
00000011, or 03
REG07
Misc Operation Control Register
01001011, or 4B
REG08
System Status Register
—
REG09
Fault Register
—
REG0A
Vender / Part / Revision Status Register
—
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9.5.1 I2C Registers
Address: 6BH. REG00-07 support Read and Write. REG08-0A are read only.
9.5.1.1 Input Source Control Register REG00 (bq24190, bq24192 reset = 00110000, or 30; bq24192I reset
= 00111000, or 38)
Figure 26. REG00 Input Source Control Register Format
7
EN_HIZ
R/W
6
VINDPM[3]
R/W
5
VINDPM[2]
R/W
4
VINDPM[1]
R/W
3
VINDPM[0]
R/W
2
IINLIM[2]
R/W
1
IINLIM[1]
R/W
0
IINLIM[0]
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 8. REG00 Input Source Control Register Description
BIT
FIELD
TYPE
RESET
DESCRIPTION
Bit 7
EN_HIZ
R/W
0
0 – Disable, 1 – Enable
Default: Disable (0)
Offset 3.88 V, Range: 3.88 V to 5.08 V
Default:
bq24190/bq24192: 4.36 V (0110)
bq24192i: 4.44 V (0111)
Input Voltage Limit
Bit 6
VINDPM[3]
R/W
0
640 mV
Bit 5
VINDPM[2]
R/W
1
320 mV
Bit 4
VINDPM[1]
R/W
1
160 mV
Bit 3
VINDPM[0]
R/W
0:
(bq24190/92)
1: (bq24192I)
80 mV
Input Current Limit (Actual input current limit is the lower of I2C and ILIM)
Bit 2
IINLIM[2]
R/W
0
Bit 1
IINLIM[1]
R/W
0
Bit 0
IINLIM[0]
R/W
0
000 – 100 mA, 001 – 150 mA,
010 – 500 mA,
011 – 900 mA, 100 – 1.2 A,
101 – 1.5 A,
110 – 2 A, 111 – 3 A
Default SDP: 100 mA (000)(OTG pin = 0) or 500
mA (010)
(OTG pin = 1)
Default DCP/CDP:
bq24190/bq24192I: 1.5 A (101),
bq24192: 3 A (111)
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9.5.1.2 Power-On Configuration Register REG01 (reset = 00011011, or 1B)
Figure 27. REG01 Power-On Configuration Register Format
7
6
Register Reset I2C Watchdog
Timer Reset
R/W
R/W
5
CHG_CONFIG[1]
4
CHG_CONFIG[0]
3
SYS_MIN[2]
2
SYS_MIN[1]
1
SYS_MIN[0]
0
BOOST_LIM
R/W
R/W
R/W
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9. REG01 Power-On Configuration Register Description
BIT
FIELD
TYPE
RESET
DESCRIPTION
NOTE
Bit 7
Register Reset
R/W
0
0 – Keep current register setting,
1 – Reset to default
Default: Keep current register setting (0)
Back to 0 after register reset
Bit 6
I2C Watchdog
Timer Reset
R/W
0
0 – Normal ; 1 – Reset
Default: Normal (0)
Back to 0 after timer reset
Charger Configuration
Bit 5
CHG_CONFIG[1]
R/W
0
CHG_CONFIG[0]
R/W
1
00 – Charge Disable, 01 – Charge
Battery,
10/11 – OTG
Default: Charge Battery (01)
Bit 4
Offset: 3.0 V, Range 3.0 V to 3.7 V
Default: 3.5 V (101)
Minimum System Voltage Limit
Bit 3
SYS_MIN[2]
R/W
1
0.4 V
Bit 2
SYS_MIN[1]
R/W
0
0.2 V
Bit 1
SYS_MIN[0]
R/W
1
0.1 V
R/W
1
0 – 500 mA, 1 – 1.3 A
Boost Mode Current Limit
Bit 0
30
BOOST_LIM
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Default: 1.3 A (1)
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9.5.1.3 Charge Current Control Register REG02 (bq24190, bq24192 reset = 01100000, or 60; bq24192I
reset = 00100000, or 20)
Figure 28. REG02 Charge Current Control Register Format
7
ICHG[5]
R/W
6
ICHG[4]
R/W
5
ICHG[3]
R/W
4
ICHG[2]
R/W
3
ICHG[1]
R/W
2
ICHG[0]
R/W
1
Reserved
R/W
0
FORCE_20PCT
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 10. REG02 Charge Current Control Register Description
BIT
FIELD
TYPE
RESET
DESCRIPTION
NOTE
Offset: 512 mA
Range: 512 to 4544 mA
Default:
bq24190, bq24192: 2048 mA (011000),
bq24192I: 1024 mA (001000)
Fast Charge Current Limit
Bit 7
ICHG[5]
R/W
0
2048 mA
Bit 6
ICHG[4]
R/W
0: (bq24192I)
1: (bq24190/92)
1024 mA
Bit 5
ICHG[3]
R/W
1
512 mA
Bit 4
ICHG[2]
R/W
0
256 mA
Bit 3
ICHG[1]
R/W
0
128 mA
Bit 2
ICHG[0]
R/W
0
64 mA
Bit 1
Reserved
R/W
0
0 - Reserved
Bit 0
FORCE_20PCT
R/W
0
0 - ICHG as REG02[7:2] (Fast Charge Default: ICHG as REG02[7:2] (Fast Charge
Current Limit) and REG03[7:4] (PreCurrent Limit) and REG03[7:4] (Pre-Charge
Charge Current Limit) programmed
Current Limit) programmed (0)
1 - ICHG as 20% of REG02[7:2] (Fast
Charge Current Limit) and 50% of
REG03[7:4] (Pre-Charge Current Limit)
programmed
Reserved. Must write "0"
9.5.1.4 Pre-Charge/Termination Current Control Register REG03 (reset = 00010001, or 11)
Figure 29. REG03 Pre-Charge/Termination Current Control Register Format
7
IPRECHG[3]
R/W
6
IPRECHG[2]
R/W
5
IPRECHG[1]
R/W
4
IPRECHG[0]
R/W
3
ITERM[3]
R/W
2
ITERM[2]
R/W
1
ITERM[1]
R/W
0
ITERM[0]
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 11. REG03 Pre-Charge/Termination Current Control Register Description
BIT
FIELD
TYPE
RESET
DESCRIPTION
NOTE
Offset: 128 mA,
Range:
bq24190, bq24192: 128 mA to 2048 mA
bq24192I: 128 mA to 640 mA(0100)
Default: 256 mA (0001)
Pre-Charge Current Limit
Bit 7
IPRECHG[3]
R/W
0
1024 mA
Bit 6
IPRECHG[2]
R/W
0
512 mA
Bit 5
IPRECHG[1]
R/W
0
256 mA
Bit 4
IPRECHG[0]
R/W
1
128 mA
Termination Current Limit
Bit 3
ITERM[3]
R/W
0
1024 mA
Bit 2
ITERM[2]
R/W
0
512 mA
Bit 1
ITERM[1]
R/W
0
256 mA
Bit 0
ITERM[0]
R/W
1
128 mA
Offset: 128 mA
Range: 128 mA to 2048 mA
Default: 256 mA (0001)
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9.5.1.5 Charge Voltage Control Register REG04 (bq24190, bq241192 reset = 10110010, or B2; bq24192I
reset = 10011010, or 9A)
Figure 30. REG04 Charge Voltage Control Register Format
7
VREG[5]
R/W
6
VREG[4]
R/W
5
VREG[3]
R/W
4
VREG[2]
R/W
3
VREG[1]
R/W
2
VREG[0]
R/W
1
BATLOWV
R/W
0
VRECHG
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 12. REG04 Charge Voltage Control Register Description
BIT
FIELD
TYPE
RESET
DESCRIPTION
NOTE
Offset: 3.504 V
Range: 3.504 V to 4.400 V (111000)
Default:
bq24190, bq24192: 4.208 V (101100)
bq24192I: 4.112 V (100110)
Charge Voltage Limit
Bit 7
VREG[5]
R/W
1
512 mV
Bit 6
VREG[4]
R/W
0
256 mV
Bit 5
VREG[3]
R/W
0: (bq24192I)
1: (bq24190/92)
128 mV
Bit 4
VREG[2]
R/W
1
64 mV
Bit 3
VREG[1]
R/W
0: (bq24190/92)
1: (bq24192I)
32 mV
Bit 2
VREG[0]
R/W
0
16 mV
Battery Precharge to Fast Charge Threshold
Bit 1
BATLOWV
R/W
1
0 – 2.8 V, 1 – 3.0 V
Default: 3.0 V (1)
Battery Recharge Threshold (below battery regulation voltage)
Bit 0
VRECHG
R/W
0
0 – 100 mV, 1 – 300 mV
Default: 100 mV (0)
9.5.1.6 Charge Termination/Timer Control Register REG05 (reset = 10011010, or 9A)
Figure 31. REG05 Charge Termination/Timer Control Register Format
7
EN_TERM
R/W
6
TERM_STAT
R/W
5
4
WATCHDOG[1] WATCHDOG[0]
R/W
R/W
3
EN_TIMER
R/W
2
1
CHG_TIMER[1] CHG_TIMER[0]
R/W
R/W
0
Reserved
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 13. REG05 Charge Termination/Timer Control Register Description
BIT
FIELD
TYPE
RESET
DESCRIPTION
NOTE
R/W
1
0 – Disable, 1 – Enable
Default: Enable termination (1)
R/W
0
0 – Match ITERM,
1 – STAT pin high before actual
termination when charge current
below 800 mA
Default Match ITERM (0)
00 – Disable timer, 01 – 40 s,
10 – 80 s, 11 – 160 s
Default: 40 s (01)
Charging Termination Enable
Bit 7
EN_TERM
Termination Indicator Threshold
Bit 6
TERM_STAT
I2C Watchdog Timer Setting
Bit 5
WATCHDOG[1]
R/W
0
Bit 4
WATCHDOG[0]
R/W
1
Charging Safety Timer Enable
Bit 3
EN_TIMER
R/W
1
0 – Disable, 1 – Enable
Default: Enable (1)
00 – 5 hrs, 01 – 8 hrs, 10 – 12
hrs, 11 – 20 hrs
Default: 8 hours (01)
(See Charging Safety Timer for details)
0 - Reserved
Reserved. Must write "0"
Fast Charge Timer Setting
Bit 2
CHG_TIMER[1]
R/W
0
Bit 1
CHG_TIMER[0]
R/W
1
Bit 0
Reserved
R/W
0
32
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9.5.1.7 IR Compensation / Thermal Regulation Control Register REG06 (reset = 00000011, or 03)
Figure 32. REG06 IR Compensation / Thermal Regulation Control Register Format
7
BAT_COMP[2]
R/W
6
BAT_COMP[1]
R/W
5
BAT_COMP[0]
R/W
4
VCLAMP[2]
R/W
3
VCLAMP[1]
R/W
2
VCLAMP[0]
R/W
1
TREG[1]
R/W
0
TREG[0]
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 14. REG06 IR Compensation / Thermal Regulation Control Register Description
BIT
FIELD
TYPE
RESET
DESCRIPTION
NOTE
Range: 0 to 70 mΩ
Default: 0 Ω (000)
IR Compensation Resistor Setting
Bit 7
BAT_COMP[2]
R/W
0
40 mΩ
Bit 6
BAT_COMP[1]
R/W
0
20 mΩ
Bit 5
BAT_COMP[0]
R/W
0
10 mΩ
IR Compensation Voltage Clamp (above regulation voltage)
Bit 4
VCLAMP[2]
R/W
0
64 mV
Bit 3
VCLAMP[1]
R/W
0
32 mV
Range: 0 to 112 mV
Default: 0 mV (000)
Bit 2
VCLAMP[0]
R/W
0
16 mV
00 – 60°C, 01 – 80°C, 10 –
100°C, 11 – 120°C
Thermal Regulation Threshold
Bit 1
TREG[1]
R/W
1
Bit 0
TREG[0]
R/W
1
Default: 120°C (11)
9.5.1.8 Misc Operation Control Register REG07 (reset = 01001011, or 4B)
Figure 33. REG07 Misc Operation Control Register Format
7
DPDM_EN
R/W
6
TMR2X_EN
R/W
5
BATFET_Disable
R/W
4
Reserved
R/W
3
Reserved
R/W
2
Reserved
R/W
1
INT_MASK[1]
R/W
0
INT_MASK[0]
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 15. REG07 Misc Operation Control Register Description
BIT
FIELD
TYPE
RESET
DESCRIPTION
NOTE
Force DPDM detection (bq24190) or set default input current limit from PSEL/OTG pins (bq24192, bq24192I)
Bit 7
DPDM_EN
R/W
0
0 – Not in D+/D– detection;
1 – Force D+/D– detection
Default: Not in D+/D– detection (0),
Back to 0 after detection complete
Safety Timer Setting during Input DPM and Thermal Regulation
Bit 6
TMR2X_EN
R/W
1
0 – Safety timer not slowed by 2X during Default: Safety timer slowed by 2X (1)
input DPM or thermal regulation,
1 – Safety timer slowed by 2X during
input DPM or thermal regulation
Force BATFET Off
Bit 5
BATFET_Disable
R/W
0
0 – Allow Q4 turn on, 1 – Turn off Q4
Bit 4
Reserved
R/W
0
0 – Reserved
Bit 4
Reserved
R/W
0
0 – Reserved. Must write "0"
Bit 3
Reserved
R/W
1
1 – Reserved. Must write "1"
Bit 2
Reserved
R/W
0
0 – Reserved. Must write "0"
Bit 1
INT_MASK[1]
R/W
1
0 – No INT during CHRG_FAULT, 1 –
INT on CHRG_FAULT
Default: INT on CHRG_FAULT (1)
Bit 0
INT_MASK[0]
R/W
1
0 – No INT during BAT_FAULT, 1 – INT
on BAT_FAULT
Default: INT on BAT_FAULT (1)
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9.5.1.9 System Status Register REG08
Figure 34. REG08 System Status Register Format
7
VBUS_STAT[1]
R
6
VBUS_STAT[0]
R
5
CHRG_STAT[1]
R
4
CHRG_STAT[0]
R
3
DPM_STAT
R
2
PG_STAT
R
1
THERM_STAT
R
0
VSYS_STAT
R
LEGEND: R = Read only; -n = value after reset
Table 16. REG08 System Status Register Description
BIT
FIELD
TYPE
DESCRIPTION
Bit 7
VBUS_STAT[1]
R
Bit 6
VBUS_STAT[0]
R
00 – Unknown (no input, or DPDM detection incomplete), 01 – USB host, 10 – Adapter
port, 11 – OTG
Bit 5
CHRG_STAT[1]
R
Bit 4
CHRG_STAT[0]
R
Bit 3
DPM_STAT
R
0 – Not DPM, 1 – VINDPM or IINDPM
Bit 2
PG_STAT
R
0 – Not Power Good, 1 – Power Good
Bit 1
THERM_STAT
R
0 – Normal, 1 – In Thermal Regulation
Bit 0
VSYS_STAT
R
0 – Not in VSYSMIN regulation (BAT > VSYSMIN), 1 – In VSYSMIN regulation (BAT <
VSYSMIN)
00 – Not Charging, 01 – Pre-charge (<VBATLOWV), 10 – Fast Charging, 11 – Charge
Termination Done
9.5.1.10 Fault Register REG09
Figure 35. REG09 Fault Register Format
7
WATCHDOG_
FAULT
R
6
BOOST_
FAULT
R
5
4
CHRG_FAULT[1] CHRG_FAULT[0]
R
3
BAT_FAULT
2
NTC_FAULT[2]
1
NTC_FAULT[1]
0
NTC_FAULT[0]
R
R
R
R
R
LEGEND: R = Read only; -n = value after reset
Table 17. REG09 Fault Register Description
BIT
FIELD
TYPE
DESCRIPTION
Bit 7
WATCHDOG_FAULT
R
0 – Normal, 1- Watchdog timer expiration
Bit 6
BOOST_FAULT
R
0 – Normal, 1 – VBUS overloaded (OCP), or VBUS OVP in boost mode
Bit 5
CHRG_FAULT[1]
R
Bit 4
CHRG_FAULT[0]
R
00 – Normal, 01 – Input fault (VBUS OVP or VBAT < VBUS < 3.8 V), 10 - Thermal
shutdown,
11 – Charge Safety Timer Expiration
Bit 3
BAT_FAULT
R
0 – Normal, 1 – BATOVP
Bit 2
NTC_FAULT[2]
R
Bit 1
NTC_FAULT[1]
R
000 – Normal, 001 – TS1 Cold, 010 – TS1 Hot, 011 – TS2 Cold,
100 – TS2 Hot, 101 – Both Cold, 110 – Both Hot
Bit 0
NTC_FAULT[0]
R
34
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9.5.1.11 Vender / Part / Revision Status Register REG0A (bq24190 reset = 00100011, or 23; bq24192
reset = 00101011, or 2B; bq24192I reset = 00001011, or 0B)
Figure 36. REG0A Vender / Part / Revision Status Register Format
7
Reserved
R
6
Reserved
R
5
PN[2]
R
4
PN[1]
R
3
PN[0]
R
2
TS_PROFILE
R
1
DEV_REG[0]
R
0
DEV_REG[1]
R
LEGEND: R = Read only; -n = value after reset
Table 18. REG0A Vender / Part / Revision Status Register Description
BIT
FIELD
TYPE
RESET
DESCRIPTION
Bit 7
Reserved
R
0
0 - Reserved
Bit 6
Reserved
R
0
0 - Reserved
bq24190 – 100, bq24192 – 101, bq24192I – 011
Device Configuration
Bit 5
PN[2]
R
0: (bq24192I)
1: (bq24190/92)
Bit 4
PN[1]
R
0
Bit 3
PN[0]
R
0: (bq24190)
1: (bq24192/92I)
Bit 2
TS_PROFILE
R
0
0 – Cold/Hot window
Bit 1
DEV_REG[0]
R
1
11
Bit 0
DEV_REG[1]
R
1
Copyright © 2012–2014, Texas Instruments Incorporated
Product Folder Links: bq24190 bq24192 bq24192I
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10 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
A typical application consists of the device configured as an I2C controlled power path management device and a
single cell Li-Ion battery charger for single cell Li-Ion and Li-polymer batteries used in a wide range of tablets and
other portable devices. It integrates an input reverse-blocking FET (RBFET, Q1), high-side switching FET
(HSFET, Q2), low-side switching FET (LSFET, Q3), and BATFET (Q4) between the system and battery. The
device also integrates a bootstrap diode for the high-side gate drive.
10.2 Typical Application
bq24190
5V USB SDP/DCP
10μF
47nF
6.8μF
USB
SYS: 3.5V-4.35V
SW
VBUS
PMID
1μF
1μH
10μF
10μF
10μF
BTST
REGN
D+
4.7μF
D–
SYS
PGND
2.2kW
STAT
VREF
SYS
BAT
10kW
10kW
SDA
SCL
INT
OTG
CE
Host
353W
10μF
(1.5A max)
10kW
ILIM
REGN
5.52kW
TS1
TS2
31.23kW
Power Pad
10kW
(103-AT)
Figure 37. bq24190 with D+/D- Detection and USB On-The-Go (OTG)
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SLUSAW5B – JANUARY 2012 – REVISED DECEMBER 2014
Typical Application (continued)
bq24192
5V USB or
5V Adapter
VBUS
PMID
1μF
2.2μH
SYS: 3.5V-4.35V
SW
47nF
6.8μF
10μF
10μF
BTST
REGN
4.7μF
SYS
PGND
2.2kW
10kW
SYS
PG
STAT
VREF
10kW
BAT
10μF
177W
(3A max)
10kW
SDA
SCL
INT
OTG
CE
Host
PHY
ILIM
REGN
5.52kW
TS1
TS2
31.23kW
PSEL
10kW
(103-AT)
Power Pad
Figure 38. bq24192 with PSEL and USB On-The-Go (OTG)
bq24192I
5V USB
15V Adapter
SYS: 3.5V-4.35V
SW
VBUS
PMID
1μF
2.2μH
47nF
6.8μF
10μF
10μF
BTST
REGN
4.7μF
SYS
PGND
2.2kW
PG
STAT
VREF
10kW
10kW
SYS
BAT
10kW
SDA
SCL
INT
OTG
CE
Host
PHY
PSEL
ILIM
10μF
353W
(1.5A max)
REGN
10kW
TS1
TS2
10kW
Power Pad
Figure 39. bq24192I with PSEL, USB On-The-Go (OTG), No Thermistor Connections
Copyright © 2012–2014, Texas Instruments Incorporated
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Typical Application (continued)
10.2.1 Design Requirements
Table 19. Design Requirements
DESIGN PARAMETER
EXAMPLE VALUE
Input voltage
3.9 V to 17 V
Input current limit
3000 mA
Fast charge current
4000 mA
Boost mode output current
1.3 A
10.2.2 Detailed Design Procedure
10.2.2.1 Inductor Selection
The bq24190, bq24192, bq24192I has 1.5-MHz switching frequency to allow the use of small inductor and
capacitor values. The Inductor saturation current should be higher than the charging current (ICHG) plus half the
ripple current (IRIPPLE):
ISAT ³ ICHG + (1/ 2 ) IRIPPLE
(5)
The inductor ripple current depends on input voltage (VBUS), duty cycle (D = VBAT/VVBUS), switching frequency
(fs) and inductance (L):
V ´ D ´ (1 - D)
IRIPPLE = IN
¦s ´ L
(6)
The maximum inductor ripple current happens with D = 0.5 or close to 0.5. Usually inductor ripple is designed in
the range of (20 to 40%) maximum charging current as a trade-off between inductor size and efficiency for a
practical design. Typical inductor value is 2.2 µH.
10.2.2.2 Input Capacitor
Input capacitor should have enough ripple current rating to absorb input switching ripple current. The worst case
RMS ripple current is half of the charging current when duty cycle is 0.5. If the converter does not operate at
50% duty cycle, then the worst case capacitor RMS current ICIN occurs where the duty cycle is closest to 50%
and can be estimated by the following equation:
ICIN = ICHG ´ D ´ (1 - D)
(7)
For best performance, VBUS should be decouple to PGND with 1-μF capacitance. The remaining input capacitor
should be place on PMID.
Low ESR ceramic capacitor such as X7R or X5R is preferred for input decoupling capacitor and should be
placed to the drain of the high side MOSFET and source of the low side MOSFET as close as possible. Voltage
rating of the capacitor must be higher than normal input voltage level. 25-V rating or higher capacitor is preferred
for 15-V input voltage.
10.2.2.3 Output Capacitor
Output capacitor also should have enough ripple current rating to absorb output switching ripple current. The
output capacitor RMS current ICOUT is given:
I
ICOUT = RIPPLE » 0.29 ´ IRIPPLE
2´ 3
(8)
The output capacitor voltage ripple can be calculated as follows:
VOUT æç
VOUT ö÷
1
DVO =
VIN ÷
8LC¦ s2 çè
ø
(9)
At certain input/output voltage and switching frequency, the voltage ripple can be reduced by increasing the
output filter LC.
38
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The charger device has internal loop compensator. To get good loop stability, the resonant frequency of the
output inductor and output capacitor should be designed between 15 kHz and 25 kHz. With 2.2-µH inductor, the
typical output capacitor value is 20 µF. The preferred ceramic capacitor is 6 V or higher rating, X7R or X5R.
10.2.3 Application Performance Plots
VBUS
5V/div
VBUS
5V/div
REGN
5V/div
REGN
5V/div
SYS
2V/div
SYS
2V/div
/PG
2V/div
IIN
200mA/div
40ms/div
100ms/div
VBAT 3.2 V
VBAT 3.2 V
Figure 40. bq24190 Power Up from USB100 mA
Figure 41. bq24192 Power Up with Charge Disabled
STAT
2V/div
VBUS
5V/div
/CE
5V/div
REGN
5V/div
SW
5V/div
SYS
2V/div
IBAT
1A/div
IBAT
2A/div
100ms/div
400us/div
VBUS 5 V
Figure 42. bq24192 Power Up with Charge Enabled
Figure 43. Charge Enable
SYS
3.4V Offset
200mV/div
STAT
2V/div
/CE
5V/div
IIN
2A/div
SW
10V/div
ISYS
2A/div
IBAT
2A/div
2ms/div
4us/div
VBUS 5 V, IIN 3 A, Charge Disable
VBUS 12 V
Figure 44. Charge Disable
Figure 45. Input Current DPM Response without Battery
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SYS
3.4V offset
200mV/div
SW
5V/div
ISYS
5A/div
IIN
1A/div
IL
1A/div
IBAT
2A/div
0
400ns/div
2ms/div
VBUS 12 V, VBAT 3.8 V, ICHG 3 A
VBUS 9 V, IIN 1.5 A, VBAT 3.8 V
Figure 47. PWM Switching Waveform
Figure 46. Load Transient During Supplement Mode
SYS
3.4V offset
100mV/div
SW
5V/div
SW
5V/div
IL
1A/div
IL
1A/div
4us/div
400ns/div
VBUS 9 V, No Battery, ISYS 10 mA, Charge Disable
VBAT 3.8 V, ILOAD 1 A
Figure 48. PFM Switching Waveform
Figure 49. Boost Mode Switching Waveform
VBUS
5V offset
200mV/div
IBAT
500mA/div
IVBUS
500mA/div
4ms/div
VBAT 3.8 V
Figure 50. Boost Mode Load Transient
40
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SLUSAW5B – JANUARY 2012 – REVISED DECEMBER 2014
11 Power Supply Recommendations
In order to provide an output voltage on SYS, the bq2419x require a power supply between 3.9 V and 17 V input
with at least 100 mA current rating connected to VBUS; or, a single-cell Li-Ion battery with voltage > VBATUVLO
connected to BAT. The source current rating needs to be at least 3 A in order for the buck converter of the
charger to provide maximum output power to SYS.
12 Layout
12.1 Layout Guidelines
The switching node rise and fall times should be minimized for minimum switching loss. Proper layout of the
components to minimize high frequency current path loop (see Figure 51) is important to prevent electrical and
magnetic field radiation and high frequency resonant problems. Here is a PCB layout priority list for proper
layout. Layout PCB according to this specific order is essential.
1. Place input capacitor as close as possible to PMID pin and GND pin connections and use shortest copper
trace connection or GND plane.
2. Place inductor input terminal to SW pin as close as possible. Minimize the copper area of this trace to lower
electrical and magnetic field radiation but make the trace wide enough to carry the charging current. Do not
use multiple layers in parallel for this connection. Minimize parasitic capacitance from this area to any other
trace or plane.
3. Put output capacitor near to the inductor and the IC. Ground connections need to be tied to the IC ground
with a short copper trace connection or GND plane.
4. Route analog ground separately from power ground. Connect analog ground and connect power ground
separately. Connect analog ground and power ground together using power pad as the single ground
connection point. Or using a 0-Ω resistor to tie analog ground to power ground.
5. Use single ground connection to tie charger power ground to charger analog ground. Just beneath the IC.
Use ground copper pour but avoid power pins to reduce inductive and capacitive noise coupling.
6. Decoupling capacitors should be placed next to the IC pins and make trace connection as short as possible.
7. It is critical that the exposed power pad on the backside of the IC package be soldered to the PCB ground.
Ensure that there are sufficient thermal vias directly under the IC, connecting to the ground plane on the
other layers.
8. The via size and number should be enough for a given current path.
See the EVM design for the recommended component placement with trace and via locations. For the VQFN
information, refer to SCBA017 and SLUA271.
Figure 51. High Frequency Current Path
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12.2 Layout Example
CPMID
PGND
Top layer
L
CBUS
PGND
CREGN CBTST
RBTST
2nd layer (PGND)
PGND
VBUS
CSYS
PIN1
via
VSYS
PGND
VBAT
PGND
PGND on
Top layer
CBAT
PGND
PGND
Figure 52. Layout Example Diagram
42
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SLUSAW5B – JANUARY 2012 – REVISED DECEMBER 2014
13 Device and Documentation Support
13.1 Documentation Support
13.1.1 Related Documentation
bq2419x EVM (PWR021) User’s Guide (SLUUA14)
Quad Flatpack No-Lead Logic Packages Application Report (SCBA017)
QFN/SON PCB Attachment Application Report (SLUA271)
13.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 20. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
bq24190
Click here
Click here
Click here
Click here
Click here
bq24192
Click here
Click here
Click here
Click here
Click here
bq24192I
Click here
Click here
Click here
Click here
Click here
13.3 Trademarks
All trademarks are the property of their respective owners.
13.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
13.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
15-Apr-2017
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
BQ24190RGER
ACTIVE
VQFN
RGE
24
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ24190
BQ24190RGET
ACTIVE
VQFN
RGE
24
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ24190
BQ24192IRGER
ACTIVE
VQFN
RGE
24
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ
24192I
BQ24192IRGET
ACTIVE
VQFN
RGE
24
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ
24192I
BQ24192RGER
ACTIVE
VQFN
RGE
24
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ24192
BQ24192RGET
ACTIVE
VQFN
RGE
24
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ24192
HPA01186RGER
ACTIVE
VQFN
RGE
24
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ24190
HPA02150RGER
ACTIVE
VQFN
RGE
24
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ24190
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
(4)
15-Apr-2017
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jan-2017
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
BQ24190RGER
VQFN
RGE
24
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
3000
330.0
12.4
4.25
4.25
1.15
8.0
12.0
Q2
BQ24190RGET
VQFN
RGE
24
250
180.0
12.4
4.25
4.25
1.15
8.0
12.0
Q2
BQ24192IRGER
VQFN
RGE
24
3000
330.0
12.4
4.25
4.25
1.15
8.0
12.0
Q2
BQ24192IRGET
VQFN
RGE
24
250
180.0
12.4
4.25
4.25
1.15
8.0
12.0
Q2
BQ24192RGER
VQFN
RGE
24
3000
330.0
12.4
4.25
4.25
1.15
8.0
12.0
Q2
BQ24192RGET
VQFN
RGE
24
250
180.0
12.4
4.25
4.25
1.15
8.0
12.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jan-2017
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
BQ24190RGER
VQFN
RGE
24
3000
367.0
367.0
35.0
BQ24190RGET
VQFN
RGE
24
250
210.0
185.0
35.0
BQ24192IRGER
VQFN
RGE
24
3000
367.0
367.0
35.0
BQ24192IRGET
VQFN
RGE
24
250
210.0
185.0
35.0
BQ24192RGER
VQFN
RGE
24
3000
367.0
367.0
35.0
BQ24192RGET
VQFN
RGE
24
250
210.0
185.0
35.0
Pack Materials-Page 2
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Unless TI has explicitly designated an individual product as meeting the requirements of a particular industry standard (e.g., ISO/TS 16949
and ISO 26262), TI is not responsible for any failure to meet such industry standard requirements.
Where TI specifically promotes products as facilitating functional safety or as compliant with industry functional safety standards, such
products are intended to help enable customers to design and create their own applications that meet applicable functional safety standards
and requirements. Using products in an application does not by itself establish any safety features in the application. Designers must
ensure compliance with safety-related requirements and standards applicable to their applications. Designer may not use any TI products in
life-critical medical equipment unless authorized officers of the parties have executed a special contract specifically governing such use.
Life-critical medical equipment is medical equipment where failure of such equipment would cause serious bodily injury or death (e.g., life
support, pacemakers, defibrillators, heart pumps, neurostimulators, and implantables). Such equipment includes, without limitation, all
medical devices identified by the U.S. Food and Drug Administration as Class III devices and equivalent classifications outside the U.S.
TI may expressly designate certain products as completing a particular qualification (e.g., Q100, Military Grade, or Enhanced Product).
Designers agree that it has the necessary expertise to select the product with the appropriate qualification designation for their applications
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requirements in connection with such selection.
Designer will fully indemnify TI and its representatives against any damages, costs, losses, and/or liabilities arising out of Designer’s noncompliance with the terms and provisions of this Notice.
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