Siemens BSP318S Sipmos small-signal transistor(n channel enhancement mode logic level avalanche rated) Datasheet

BSP 318 S
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche rated
• VGS(th) = 1.2 ...2.0 V
Pin 1
G
Pin 2
D
Pin 3
Pin 4
S
D
Type
VDS
ID
RDS(on)
Package
Marking
Ordering Code
BSP 318 S
60 V
2.6 A
0.15 Ω
SOT-223
BSP 318 S
Q 67000-S127
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
Values
A
TA = 25 °C
2.6
TA = 100 °C
1.7
DC drain current, pulsed
Unit
IDpuls
TA = 25 °C
10.4
Avalanche energy, single pulse
mJ
E AS
ID = 2.6 A, V DD = 25 V, RGS = 25 Ω
L = 10 mH, Tj = 25 °C
60
Avalanche energy, periodic limited by Tj(max)
E AR
0.18
Avalanche current, repetitive,limited by Tj(max)
IAR
2.6
Reverse diode dv /dt
dv /dt
A
KV/µs
IS = 2.6 A, VDS = 40 V, di/dt = 200 A/µs
Tjmax = 150 °C
6
Gate source voltage
V GS
Power dissipation
P tot
TA = 25 °C
Semiconductor Group
± 14
V
W
1.8
1
29/01/1998
BSP 318 S
Maximum Ratings
Parameter
Symbol
Values
Chip or operating temperature
Tj
-55 ... + 150
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip to ambient air 1)
RthJA
≤ 70
Thermal resistance, junction-soldering point 1)
RthJS
17
IEC climatic category, DIN IEC 68-1
Unit
°C
K/W
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
*) MIL STD 883, Method 3015, Class 2
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
60
-
-
1.2
1.6
2
V GS(th)
V GS=V DS, ID = 20 µA
Zero gate voltage drain current
V
V (BR)DSS
µA
IDSS
V DS = 60 V, V GS = 0 V, Tj = -40 °C
-
-
0.1
V DS = 60 V, V GS = 0 V, Tj = 25 °C
-
0.1
1
V DS = 60 V, V GS = 0 V, Tj = 150 °C
-
-
100
Gate-source leakage current
V GS = 20 V, VDS = 0 V
Drain-Source on-state resistance
nA
IGSS
-
10
100
Ω
RDS(on)
V GS = 4.5 V, ID = 2.6 A
-
0.12
0.15
V GS = 10 V, ID = 2.6 A
-
0.07
0.09
Semiconductor Group
2
29/01/1998
BSP 318 S
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Dynamic Characteristics
Transconductance
V DS≥ 2 * ID * RDS(on)max, ID = 2.6 A
Input capacitance
2.4
pF
-
300
380
-
90
120
-
50
65
Crss
V GS = 0 V, V DS = 25 V, f = 1 MHz
Turn-on delay time
-
Coss
V GS = 0 V, V DS = 25 V, f = 1 MHz
Reverse transfer capacitance
5.6
Ciss
V GS = 0 V, V DS = 25 V, f = 1 MHz
Output capacitance
S
gfs
ns
td(on)
V DD = 30 V, VGS = 4.5 V, ID = 2.6 A
RG = 16 Ω
Rise time
-
12
20
-
15
25
-
20
30
-
15
25
tr
V DD = 30 V, VGS = 4.5 V, ID = 2.6 A
RG = 16 Ω
Turn-off delay time
td(off)
V DD = 30 V, VGS = 4.5 V, ID = 2.6 A
RG = 16 Ω
Fall time
tf
V DD = 30 V, VGS = 4.5 V, ID = 2.6 A
RG = 16 Ω
Gate charge at threshold
V DD = 40 V, ID ≥ 0.1 A, V GS 0 to 1 V
Gate Charge at 5.0 V
0.6
-
7
10
-
14
20
V
V (plateau)
V DS = 40 V, ID = 2.6 A
Semiconductor Group
0.4
Qg(total)
V DD = 40 V, ID = 2.6 A, V GS 0 to 10 V
Gate plateau voltage
Qg(5)
V DD = 40 V, ID = 2.6 A, V GS 0 to 5 V
Gate Charge total
nC
Qg(th)
-
3
3.6
-
29/01/1998
BSP 318 S
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current
TA = 25 °C
Inverse diode direct current,pulsed
-
-
10.4
V
0.95
1.2
ns
trr
-
50
75
µC
Qrr
V R = 30 V, IF=lS, diF/dt = 100 A/µs
Semiconductor Group
2.6
-
V R = 30 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
-
V SD
V GS = 0 V, IF = 5.2 A
Reverse recovery time
ISM
TA = 25 °C
Inverse diode forward voltage
A
IS
-
4
0.1
0.15
29/01/1998
BSP 318 S
Power dissipation
Ptot = ƒ(TA)
Drain current
ID = ƒ(TA)
parameter: VGS ≥ 4 V
2.0
2.8
A
W
2.4
Ptot
1.6
ID
2.2
2.0
1.4
1.8
1.2
1.6
1.0
1.4
1.2
0.8
1.0
0.6
0.8
0.4
0.6
0.4
0.2
0.2
0.0
0.0
0
20
40
60
80
100
120
°C
160
0
20
40
60
80
100
TA
120
°C
160
TA
Safe operating area ID=f(VDS)
Transient thermal impedance
Zth JA = ƒ(tp)
parameter: D = tp / T
parameter : D = 0, TC=25°C
10 2
K/W
10 1
ZthJC
10 0
10 -1
D = 0.50
10 -2
0.20
0.10
10 -3
0.05
single pulse
10
-4
0.02
0.01
10 -5
-8
-7
-6
-5
-4
-3
-2
-1
0
10
10
10
10
10
10
10
10 s 10
tp
Semiconductor Group
5
29/01/1998
BSP 318 S
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
6.0
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
0.45
Ptot = 2W
A
jihgf e
d
lk
b
Ω
VGS [V]
a
2.5
5.0
ID
a
4.5
c
4.0
3.5
3.0
2.5
2.0
1.5
b
3.0
c
3.5
d
4.0
e
4.5
f
5.0
g
5.5
h
6.0
i
6.5
j
7.0
k
8.0
b l
10.0
RDS (on)0.35
0.30
0.25
0.20
c
0.15
d
e
f
ik gh j
0.10
1.0
0.05
0.5
a
0.0
VGS [V] =
a
2.5
3.0
b
3.5
c
4.0
d
4.5
e
f
5.0 5.5
g
6.0
i
h
6.5 7.0
j
8.0
k
10.0
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
VDS
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
A
5.0
ID
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
VDS≥ 2 x ID x RDS(on)max
15
A
13
ID
12
11
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
V
10
VGS
Semiconductor Group
6
29/01/1998
BSP 318 S
Gate threshold voltage
Drain-source on-resistance
RDS (on) = ƒ(Tj )
parameter: ID = 2.6 A, VGS = 4.5 V
V GS(th) = f ( Tj )
parameter:VGS=V DS,ID = 20 µA
0.38
3.0
Ω
V
0.32
2.6
RDS (on)
VGS(th)
0.28
2.4
2.2
2.0
0.24
1.8
0.20
1.6
98%
1.4
0.16
typ
1.2
1.0
0.12
max
0.8
0.08
0.6
typ
0.4
0.04
0.2
0.0
0.00
-60
-20
20
60
100
°C
160
-60
min
-20
20
60
100
140
V
200
Tj
Tj
Typ. capacitances
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 3
10 2
A
C
IF
pF
Ciss
10 1
10 2
Coss
10 0
Crss
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 1
0
5
10
15
20
25
30
V
40
VDS
Semiconductor Group
10 -1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
7
29/01/1998
BSP 318 S
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 2.6 A, VDD = 25 V
RGS = 25 Ω, L = 10 mH
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 3 A
65
16
mJ
V
55
EAS
VGS
50
12
45
10
40
35
8
30
0,2 VDS max
25
0,8 VDS max
6
20
4
15
10
2
5
0
20
0
40
60
80
100
120
°C
160
Tj
0
4
8
12
16
22
Q Gate
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
71
V
V(BR)DSS
68
66
64
62
60
58
56
54
-60
-20
20
60
100
°C
160
Tj
Semiconductor Group
8
29/01/1998
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