Jiangsu A42-TO-92 Transistorï¼ npn ï¼ Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
A42
TRANSISTOR( NPN )
TO—92
FEATURES
Power dissipation
PCM : 0.625
W(Tamb=25℃)
Collector current
ICM : 0.5
A
Collector-base voltage
V(BR)CBO : 300
V
Operating and storage junction temperature range
T J ,T stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Symbol
1.EMITTER
2.BASE
3.COLLECTOR
1 2 3
unless
Test
otherwise
conditions
specified)
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100μA, IE=0
300
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=
1 mA, IB=0
300
V
Emitter-base breakdown voltage
V(BR)EBO
IE=
100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB= 200 V
Emitter cut-off current
IEBO
VEB=
5
IE=0
0.25
μA
V, IC=0
0.1
μA
hFE(1)
VCE= 10 V, IC= 1 mA
60
hFE(2)
VCE= 10V, IC = 10 mA
80
HFE(3)
VCE= 10 V, IC=30 mA
75
Collector-emitter saturation voltage
VCE(sat)
IC= 20 mA, IB= 2 mA
0.2
V
Base-emitter saturation voltage
VBE(sat)
IC= 20m A,
IB= 2 mA
0.9
V
VCE=20 V,
f =30MHz
IC= 10 mA
DC current gain
Transition frequency
fT
250
50
MHz
CLASSIFICATION OF h FE(2)
Rank
A
B1
B2
C
Range
80-100
100-150
150-200
200-250
TO-92 PACKAGE OUTLINE DIMENSIONS
D1
E
C
A
A1
D
b
L
φ
e
e1
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
3.300
3.700
0.130
0.146
A1
1.100
1.400
0.043
0.055
b
0.380
0.550
0.015
0.022
c
0.360
0.510
0.014
0.020
D
4.400
4.700
0.173
0.185
D1
3.430
E
4.300
0.135
4.700
0.169
1.270TYP
e
0.185
0.050TYP
e1
2.440
2.640
0.096
0.104
L
14.100
14.500
0.555
0.571
1.600
Ö
0.000
0.380
0.063
0.000
0.015
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