BSP31 BSP33 SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 FEBRUARY 1996 COMPLEMENTARY TYPE BSP31 BSP41 BSP33 BSP43 PARTMARKING DETAIL Device type in full C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BSP31 BSP33 UNIT V Collector-Base Voltage VCBO -70 -90 Collector-Emitter Voltage VCEO -60 -80 Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation at Tamb=25°C PTOT 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base BSP31 Breakdown Voltage BSP33 V(BR)CBO -70 -90 MAX. V V IC=-100µA IC=-100µA Collector-Emitter BSP31 Breakdown Voltage BSP33 V(BR)CEO -60 -80 V IC=-10mA IC=-10mA Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10µA Collector Cut-Off Current ICBO -100 -50 µA nA VCB=-60V VCB=-60V, Tamb=125°C Collector-Emitter Saturation VCE(sat) Voltage -0.25 -0.5 V V IC =-150mA, IB=-15mA IC =-500mA, IB=-50mA Base-Emitter Saturation Voltage VBE(sat) -1.0 -1.2 V V IC=-150mA, IB=-15mA IC =-500mA, IB=-50mA Static Forward Current Transfer Ratio hFE 30 100 50 IC =-100µA, VCE =-5V IC =-100mA, VCE =-5V IC =-500mA, VCE =-5V 300 Collector Capacitance Cc 20 pF VCB =-10V, f =1MHz Emitter Capacitance Ce 120 pF VEB =-0.5V, f =1MHz Transition Frequency fT MHz IC=-50mA, VCE=-10V f =35MHz Turn-On Time Ton 500 ns Turn-Off Time Toff 650 ns VCC =-20V, IC =-100mA IB1 =-IB2 =-5mA 100 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 62