Zetex BSP33 Sot223 pnp silicon planar medium power transistor Datasheet

BSP31
BSP33
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996
COMPLEMENTARY TYPE –
BSP31 – BSP41
BSP33 – BSP43
PARTMARKING DETAIL –
Device type in full
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BSP31
BSP33
UNIT
V
Collector-Base Voltage
VCBO
-70
-90
Collector-Emitter Voltage
VCEO
-60
-80
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Power Dissipation at Tamb=25°C
PTOT
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
V
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
UNIT
CONDITIONS.
Collector-Base
BSP31
Breakdown Voltage BSP33
V(BR)CBO
-70
-90
MAX.
V
V
IC=-100µA
IC=-100µA
Collector-Emitter
BSP31
Breakdown Voltage BSP33
V(BR)CEO
-60
-80
V
IC=-10mA
IC=-10mA
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE=-10µA
Collector Cut-Off Current
ICBO
-100
-50
µA
nA
VCB=-60V
VCB=-60V, Tamb=125°C
Collector-Emitter Saturation VCE(sat)
Voltage
-0.25
-0.5
V
V
IC =-150mA, IB=-15mA
IC =-500mA, IB=-50mA
Base-Emitter
Saturation Voltage
VBE(sat)
-1.0
-1.2
V
V
IC=-150mA, IB=-15mA
IC =-500mA, IB=-50mA
Static Forward Current
Transfer Ratio
hFE
30
100
50
IC =-100µA, VCE =-5V
IC =-100mA, VCE =-5V
IC =-500mA, VCE =-5V
300
Collector Capacitance
Cc
20
pF
VCB =-10V, f =1MHz
Emitter Capacitance
Ce
120
pF
VEB =-0.5V, f =1MHz
Transition Frequency
fT
MHz
IC=-50mA, VCE=-10V
f =35MHz
Turn-On Time
Ton
500
ns
Turn-Off Time
Toff
650
ns
VCC =-20V, IC =-100mA
IB1 =-IB2 =-5mA
100
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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