ASB ASL425 200 ~ 4000 mhz mmic amplifier Datasheet

ASL425
200 ~ 4000 MHz MMIC Amplifier
Description
Features
 22 dB Gain at 1950 MHz
 29.5 dBm P1dB at 1950 MHz
 47 dBm Output IP3 at 1950 MHz
 MTTF > 100 Years
 Two Power Supplies
The ASL425, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication
systems up to 4 GHz. The amplifier is available in
a SOIC8 package and passes through the stringent DC, RF, and reliability tests.
ASL425
Package Style: SOIC8
Typical Performance
(Supply Voltage = +5 V, TA = +25 C, Z0 = 50 )
Application Circuit
Parameters
Units
Typical
Frequency
MHz
900
1950
2300
2700
Gain
dB
34.0
22.0
20.0
17.5
S11
dB
-14
-13
-11
-9
S22
dB
-14
-15
-15
-17
Output IP3
dBm
451)
472)
462)
452)
Noise Figure
dB
1.0
1.4
1.5
2.1
 WCDMA
Output P1dB
dBm
29.0
29.5
29.5
28.5
 2300 ~ 2700 MHz
Current
mA
350
350
350
350
Device Voltage
V
+5
+5
+5
+5
 206.5 MHz
 TETRA
 CDMA
1) OIP3 measured with two tones at an output power of +10 dBm/tone separated by 1 MHz.
2) OIP3 measured with two tones at an output power of +13 dBm/tone separated by 1 MHz.
Product Specifications*
Parameters
Units
Testing Frequency
MHz
Min
Typ.
1950
Gain
dB
22.0
S11
dB
-13
S22
dB
-15
Output IP3
dBm
47
Noise Figure
dB
1.4
Output P1dB
dBm
29.5
Current
mA
350
Device Voltage
V
+5
Max
* 100% in-house DC & RF testing is done on packaged products before taping.
Absolute Maximum Ratings
Pin Configuration
Pin No.
Function
1
2nd stage RF IN
2
1st stage RF OUT
3,5,8
GND
+150 C
4
1st stage RF IN
Input RF Power (CW, 50  matched)*
+23 dBm
6,7
2nd stage RF OUT
Thermal Resistance
28 C/W
Parameters
Rating
Operating Case Temperature
-40 to 85 C
Storage Temperature
-40 to 150 C
Device Voltage
+6 V
Operating Junction Temperature
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
1/14
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASL425
200 ~ 4000 MHz MMIC Amplifier
Outline Drawing
Part No.
Symbols
A
A1
A2
B
C
D
D2
E
E1
E2
e
L
y

|L1-L1’|
L1
ASL425
●
Pin No.
1
2
3
4
Dimensions (In mm)
MIN
NOM
1.40
1.50
0.00
----1.45
0.33
--0.19
--4.80
--3.20
3.30
5.80
6.00
3.80
3.90
2.30
2.40
--1.27
0.40
--------0
----1.04REF
Function
2nd stage RF IN
1st stage RF OUT
GND
1st stage RF IN
Pin No.
5
6
7
8
MAX
1.60
0.10
--0.51
0.25
5.00
3.40
6.20
4.00
2.50
--1.27
0.10
8
0.12
Function.
GND
2nd stage RF OUT
2nd stage RF OUT
GND
Note: 1. Backside metal paddle is RF and DC ground.
Mounting Recommendation (In mm)
Note: 1. Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
2. To ensure reliable operation, device ground paddle-to-ground
pad soldering is critical.
3. Add mounting screws near the part to fasten the board to a
heat sinker. Ensure that the ground / thermal via region contacts the heat sinker.
4. A proper heat dissipation path underneath the area of the
PCB for the mounted device is strictly required for proper
thermal operation. Damage to the device can result from inappropriate heat dissipation.
ESD Classification
HBM
Class 1A
Voltage Level: 400 V
MM
Class A
Voltage Level: 50 V
CAUTION: ESD-sensitive device!
Moisture Sensitivity Level (MSL)
Level 3 at 260 C reflow
2/14
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASL425
200 ~ 4000 MHz MMIC Amplifier
APPLICATION CIRCUIT
IF
Frequency (MHz)
206.5
Magnitude S21 (dB)
37.5
Magnitude S11 (dB)
-17
Magnitude S22 (dB)
-10
Output P1dB (dBm)
29.5
206.5 MHz
Output IP31) (dBm)
40
+5 V
Noise Figure (dB)
2.4
Device Voltage (V)
+5
Current (mA)
350
1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vs=5 V
D1=5.6V
Zener Diode
R3=8.2 
C7=1 F
C9=1 F
C8=100 pF
C6=100 pF
C5=10 pF
L4=15 nH
C4=18 pF
ASL425
L5=56 nH
RF IN
L1=120 nH
(Coil Inductor)
L3=18 nH
C2=100 pF RF OUT
4 mm
C1=100 pF
L2=47 nH
R1=180 
C3=27 pF
R2=6.2 k
50
0
40
-5
30
-10
S11 (dB)
Gain (dB)
S-parameters & K-factor
20
10
0
-15
-20
0
50
100
150
200
250
300
350
400
-25
0
50
100
Frequency (MHz)
0
4
Stability Factor
5
S22 (dB)
-5
-10
250
300
350
400
3
2
1
-15
0
50
100
150
200
250
300
350
400
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
3/14
200
Frequency (MHz)
5
-20
150
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASL425
200 ~ 4000 MHz MMIC Amplifier
Frequency (MHz)
380
440
500
Magnitude S21 (dB)
40.0
40.5
39.0
Magnitude S11 (dB)
-11
-14
-15
Magnitude S22 (dB)
-6
-6
-6
TETRA
Output P1dB (dBm)
30.0
29.5
29.0
380 ~ 500 MHz
Output IP31) (dBm)
41
45
44
Noise Figure (dB)
2.1
2.0
2.0
Device Voltage (V)
+5
+5
+5
Current (mA)
350
350
350
APPLICATION CIRCUIT
+5 V
1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
R3=8.2 
C7=1 F
C9=1 F
C8=100 pF
C6=100 pF
C5=10 pF
L4=15 nH
C4=18 pF
ASL425
L5=56 nH
RF IN
L1=120 nH
(Coil Inductor)
L3=6.8 nH
C2=100 pF RF OUT
4 mm
C1=100 pF
L2=47 nH
R1=180 
C3=12 pF
R2=6.2 k
S-parameters & K-factor
0
50
40
30
S11 (dB)
Gain (dB)
-5
20
-10
-15
10
-20
0
0
100
200
300
400
500
0
600
100
200
5
5
4
Stability Factor
10
S22 (dB)
0
-5
-10
400
500
600
3
2
1
-15
0
0
100
200
300
400
500
600
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
4/14
300
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASL425
200 ~ 4000 MHz MMIC Amplifier
Frequency (MHz)
380
400
420
Magnitude S21 (dB)
35.5
35.0
34.5
Magnitude S11 (dB)
-10
-10
-9
Magnitude S22 (dB)
-5
-6
-6
TETRA
Output P1dB (dBm)
29
29
29
380 ~ 420 MHz
Output IP31) (dBm)
45.0
45.5
46.0
Noise Figure (dB)
2.8
2.8
2.8
Device Voltage (V)
+5
+5
+5
Current (mA)
350
350
350
APPLICATION CIRCUIT
+5 V
1) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
D1=5.6V Zener
Diode
R3=8.2 
C7=1 F
C9=1 F
C6=100 pF
C8=100 pF
L4=15 nH
C4=18 pF
C5=12 pF
L1=120 nH
(Coil Inductor)
L3=6.8 nH
ASL425
L5=100 nH
RF IN
RF OUT
4 mm
C3=12 pF
C1=100 pF
R1=130 
C2=100 pF
L2=47 nH
R2=6.2 k
S-parameters & K-factor
50
0
40
30
S11 (dB)
Gain (dB)
-5
20
-10
-15
10
0
0
100
200
300
400
500
600
-20
0
100
200
Frequency (MHz)
5
5
4
Stability Factor
10
S22 (dB)
0
-5
-10
400
500
600
3
2
1
-15
0
0
100
200
300
400
500
600
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
5/14
300
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASL425
200 ~ 4000 MHz MMIC Amplifier
Frequency (MHz)
420
440
460
Magnitude S21 (dB)
43.0
42.0
41.0
Magnitude S11 (dB)
-9.0
-9.0
-8.5
Magnitude S22 (dB)
-5
-5
-5
TETRA
Output P1dB (dBm)
29.5
30.0
29.5
420 ~ 460 MHz
Output IP31) (dBm)
44.0
45.0
44 .5
Noise Figure (dB)
0.9
0.8
0.8
Device Voltage (V)
+5
+5
+5
Current (mA)
350
350
350
APPLICATION CIRCUIT
+5 V
1) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
D1=5.6V Zener
Diode
R2=8.2 
C8=1 F
C10=1 F
C7=100 pF
C5=10 pF
C9=100 pF
C6=10 pF
L1=120 nH
(Coil Inductor)
C4=18 pF
L4=12 nH
L3=6.8 nH
C2=100 pF
ASL425
L5=68 nH
RF IN
RF OUT
4 mm
C3=12 pF
C1=100 pF
L2=39 nH
R1=6.2 k
S-parameters & K-factor
50
0
40
30
S11 (dB)
Gain (dB)
-5
20
-10
-15
10
0
-20
0
100
200
300
400
500
600
0
100
200
Frequency (MHz)
5
5
4
Stability Factor
10
S22 (dB)
0
-5
-10
400
500
600
3
2
1
-15
0
0
100
200
300
400
500
600
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
6/14
300
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASL425
200 ~ 4000 MHz MMIC Amplifier
Frequency (MHz)
460
480
500
Magnitude S21 (dB)
40.0
39.0
38.5
Magnitude S11 (dB)
-11
-10
-10
Magnitude S22 (dB)
-7
-8
-8
TETRA
Output P1dB (dBm)
30.0
30.0
29.5
460 ~ 500 MHz
Output IP31) (dBm)
44.5
45.0
44.5
Noise Figure (dB)
1.80
1.90
1.95
Device Voltage (V)
+5
+5
+5
Current (mA)
350
350
350
APPLICATION CIRCUIT
+5 V
1) OIP3 is measured with two tones at an output power of +9 dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
D1=5.6V Zener
Diode
R3=8.2 
C7=1 F
C9=1 F
C8=100 pF
C6=100 pF
L4=15 nH
C4=18 pF
C5=4 pF
L1=120 nH
(Coil Inductor)
L3=3.3 nH
ASL425
L5=56 nH
RF IN
RF OUT
4 mm
C3=12 pF
C1=100 pF
R1=220 
C2=39 pF
L2=27 nH
R2=6.2 k
S-parameters & K-factor
50
0
40
30
S11 (dB)
Gain (dB)
-5
20
-10
-15
10
0
0
100
200
300
400
500
600
-20
0
100
200
Frequency (MHz)
5
5
4
Stability Factor
10
S22 (dB)
0
-5
-10
400
500
600
3
2
1
-15
0
0
100
200
300
400
500
600
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
7/14
300
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASL425
200 ~ 4000 MHz MMIC Amplifier
Frequency (MHz)
824 ~ 849
869 ~ 894
Magnitude S21 (dB)
34.5
34
Magnitude S11 (dB)
-8
-14
Magnitude S22 (dB)
-13
-14
Output P1dB (dBm)
28
29
824 ~ 894 MHz
Output IP31) (dBm)
43
45
+5 V
Noise Figure (dB)
1.0
1.0
Device Voltage (V)
+5
Current (mA)
350
APPLICATION CIRCUIT
CDMA
1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
R1=8.2 
C8=1 F
C7=100 pF
C10=1 F
C6=5.6 pF
C9=100pF
L4=5.6 nH
ASL425
L3=33 nH
RF IN
L1=82 nH
(Coil Inductor)
C2=100 pF RF OUT
C5=18 pF
7 mm
C1=100 pF
C3=3 pF
C4=4 pF
R2=6.2
k
L2=33 nH
S-parameters & K-factor
50
0
o
-40 c
o
25 c
o
85 c
40
-5
-10
S11 (dB)
Gain (dB)
30
20
10
0
600
-15
o
-40 c
o
25 c
o
85 c
-20
700
800
900
1000
1100
1200
-25
600
700
800
Frequency (MHz)
900
1000
1100
1200
Frequency (MHz)
0
5
o
-40 c
o
25 c
o
85 c
4
Stability Factor
-5
S22 (dB)
-10
-15
2
1
-20
-25
600
3
0
700
800
900
1000
1100
1200
0
500
8/14
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASL425
200 ~ 4000 MHz MMIC Amplifier
Current vs. Temperature
Gain vs. Temperature
380
37
36
360
Gain (dB)
Current (mA)
35
340
34
33
320
Frequency = 850 MHz
32
300
-60
-40
-20
0
20
40
60
80
31
-60
100
-40
-20
o
0
20
40
60
80
100
o
Temperature ( C)
Temperature ( C)
P1dB vs. Temperature
Output IP3 vs. Temperature
50
32
30
Output IP3 (dBm)
P1dB (dBm)
45
28
26
35
Frequency = 850 MHz
24
22
-60
-40
-20
0
20
40
60
80
40
30
-60
100
Frequency = 850 MHz
-40
-20
0
20
40
60
80
100
o
o
Temperature ( C)
Temperature ( C)
Output IP3 vs. Tone Power
NF vs. Temperature
2.0
50
o
-40 c
o
25 c
o
85 c
1.5
40
NF (dB)
Output IP3 (dBm)
45
35
1.0
30
20
0.5
Frequency = 850 MHz
25
7
8
9
10
11
12
13
14
15
16
17
0.0
-60
Frequency = 850 MHz
-40
9/14
-20
0
20
40
60
80
100
o
Pout per Tone (dBm)
Temperature ( C)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASL425
200 ~ 4000 MHz MMIC Amplifier
APPLICATION CIRCUIT
WCDMA Rx
Frequency (MHz)
1920 ~ 1980
Magnitude S21 (dB)
22.0
Magnitude S11 (dB)
-13
Magnitude S22 (dB)
-15
Output P1dB (dBm)
29.5
1920 ~ 1980 MHz
Output IP3 (dBm)
47
+5 V
Noise Figure (dB)
1.4
Device Voltage (V)
+5
Current (mA)
350
1)
1) OIP3 is measured with two tones at an output power of +13 dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
R1=8.2 
C7=1 F
C6=100 pF
C9=1 F
C5=1.2 pF
ASL425
L3=18 nH
RF IN
L1=39 nH
(Coil Inductor)
C2=100 pF
C4=3.3 pF
C8=100pF
C1=100 pF
L2=18 nH
RF OUT
3.5 mm
C3=1.8 pF
R2=6.2
k
S-parameters & K-factor
30
0
25
-5
20
S11 (dB)
Gain (dB)
-10
15
10
5
0
1700
-15
o
o
-40 c
o
25 c
o
85 c
1800
1900
2000
2100
-40 c
o
25 c
o
85 c
-20
2200
-25
1700
1800
1900
Frequency (MHz)
2000
2100
2200
Frequency (MHz)
0
5
o
-40 c
o
25 c
o
85 c
4
Stability Factor
-5
S22 (dB)
-10
-15
2
1
-20
-25
1700
3
0
1800
1900
2000
2100
2200
0
500
10/14
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASL425
200 ~ 4000 MHz MMIC Amplifier
Current vs. Temperature
Gain vs. Temperature
380
24
23
22
Gain (dB)
Current (mA)
360
340
21
320
Frequency = 1950 MHz
20
300
-60
-40
-20
0
20
40
60
80
19
-60
100
-40
-20
o
30
50
Output IP3 (dBm)
P1dB (dBm)
55
28
26
Frequency = 1950 MHz
-40
-20
0
40
60
80
100
Output IP3 vs. Temperature
32
22
-60
20
Temperature ( C)
P1dB vs. Temperature
24
0
o
Temperature ( C)
20
40
60
80
45
40
Frequency = 1950 MHz
35
30
-60
100
-40
-20
o
0
20
40
60
80
100
o
Temperature ( C)
Temperature ( C)
Output IP3 vs. Tone Power
NF vs. Temperature
3.0
55
o
-40 c
o
25 c
o
85 c
2.5
2.0
45
NF (dB)
Output IP3 (dBm)
50
40
1.0
35
Frequency = 1950 MHz
Frequency = 1950 MHz
30
25
10
1.5
11
12
13
14
15
16
17
18
19
0.5
20
0.0
-60
-40
11/14
-20
0
20
40
60
80
100
o
Pout per Tone (dBm)
Temperature ( C)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASL425
200 ~ 4000 MHz MMIC Amplifier
Frequency (MHz)
2110 ~ 2170
Magnitude S21 (dB)
22.5
Magnitude S11 (dB)
-10
Magnitude S22 (dB)
-18
Output P1dB (dBm)
29.5
2110 ~ 2170 MHz
Output IP31) (dBm)
47
+5 V
Noise Figure (dB)
1.5
Device Voltage (V)
+5
Current (mA)
350
APPLICATION CIRCUIT
WCDMA Tx
1) OIP3 is measured with two tones at an output power of +13 dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
R1=8.2 
C7=1 F
C6=100 pF
C9=1 F
C5=1.2 pF
ASL425
L3=18 nH
RF IN
L1=39 nH
(Coil Inductor)
C2=100 pF
RF OUT
C4=3.3 pF
C8=100pF
2 mm
C3=1.5 pF
C1=100 pF
L2=18 nH
R2=6.2 k
S-parameters & K-factor
30
0
25
-5
S11 (dB)
Gain (dB)
20
15
-10
10
-15
5
0
1900
2000
2100
2200
2300
2400
-20
1900
2000
2100
Frequency (MHz)
2200
2300
2400
Frequency (MHz)
5
0
-5
4
Stability Factor
S22 (dB)
-10
-15
-20
2
1
-25
-30
1900
3
2000
2100
2200
2300
2400
0
0
500
Frequency (MHz)
12/14
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASL425
200 ~ 4000 MHz MMIC Amplifier
Frequency (MHz)
2300
2500
2700
Magnitude S21 (dB)
20.0
19.5
17.5
Magnitude S11 (dB)
-11
-20
-9
Magnitude S22 (dB)
-15
-15
-17
LTE
Output P1dB (dBm)
29.5
30.0
28.5
2300 ~ 2700 MHz
Output IP31) (dBm)
46
45
45
Noise Figure (dB)
1.5
1.6
2.1
Device Voltage (V)
+5
+5
+5
Current (mA)
350
350
350
APPLICATION CIRCUIT
+5 V
1) OIP3 is measured with two tones at an output power of +13 dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
R1=8.2 
C8=1 F
C7=100 pF
C10=1 F
C6=0.75 pF
L3=18 nH C1=100 pF
RF IN
L1=39 nH
(Coil Inductor)
C5=2.7 pF
C9=100pF
L2=18 nH
R2=6.2
k
RF OUT
ASL425
1.5 mm
C2=100 pF
C4=1.5 pF
C3=0.75
pF
S-parameters & K-factor
25
0
-5
20
S11 (dB)
Gain (dB)
-10
15
10
-15
-20
5
0
2000
-25
2200
2400
2600
2800
3000
-30
2000
2200
2400
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
-20
-25
2000
2800
3000
3
2
1
2200
2400
2600
2800
3000
0
0
500
Frequency (MHz)
13/14
2600
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASL425
200 ~ 4000 MHz MMIC Amplifier
Recommended Soldering Reflow Profile
260 C
Ramp-up
(3 C/sec)
20~40 sec
Ramp-down
(6 C/sec)
200 C
150 C
60~180 sec
Copyright 2009-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in
any form or by any means without the prior written consent of ASB.
14/14
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
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