AP4455GMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ SO-8 Compatible
▼ Lower Gate Charge
D
G
▼ RoHS Compliant & Halogen-Free
BVDSS
RDS(ON)
ID
-30V
17.5mΩ
-38.6A
S
Description
D
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The PMPAK ® 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink.
D
D
D
S
S
S
G
PMPAK ® 5x6
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current (Chip), VGS @ 10V
ID@TA=25℃
ID@TA=70℃
-38.6
A
3
-13.8
A
3
-11
A
-120
A
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
39
W
PD@TA=25℃
Total Power Dissipation
5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
3.2
℃/W
25
℃/W
1
201210242
AP4455GMT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-30
-
-
V
VGS=-10V, ID=-12A
-
15
17.5
mΩ
VGS=-4.5V, ID=-8A
-
21.3
30
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-1.6
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-8A
-
20
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=-8A
-
18
28.8
nC
Qgs
Gate-Source Charge
VDS=-15V
-
4.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
8
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
10
-
ns
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
55
-
ns
tf
Fall Time
VGS=-10V
-
45
-
ns
Ciss
Input Capacitance
VGS=0V
-
1500 2400
pF
Coss
Output Capacitance
VDS=-15V
-
280
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
250
-
pF
Rg
Gate Resistance
f=1.0MHz
3
6
12
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-12A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-8A, VGS=0V,
-
23
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
13
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 60oC/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4455GMT-HF
80
100
T C =25 o C
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
80
T C = 150 o C
60
40
60
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
40
20
20
0
0
0
1
2
3
4
5
6
0
-V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
25
1.6
I D = -12A
V G = -10V
I D = -8 A
T C =25 ℃
23
Normalized RDS(ON)
1.4
RDS(ON) (mΩ)
21
19
17
1.2
1.0
0.8
15
13
0.6
2
4
6
8
10
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
12
2.0
I D = -250uA
Normalized -VGS(th) (V)
1.6
-IS(A)
9
o
o
T j =150 C
6
T j =25 C
1.2
0.8
3
0.4
2.01E+09
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4455GMT-HF
f=1.0MHz
2000
10
C iss
1600
8
C (pF)
-VGS , Gate to Source Voltage (V)
I D = -8 A
V DS = -15V
6
1200
4
800
2
400
0
C oss
C rss
0
0
10
20
30
40
1
5
9
Q G , Total Gate Charge (nC)
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
100
-ID (A)
Operation in this
area limited by
RDS(ON)
100us
10
1ms
T C =25 o C
Single Pulse
10ms
100ms
DC
1
0.1
1
10
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T c
Single Pulse
0.01
0.00001
100
0.0001
0.001
0.01
0.1
1
10
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
40
o
T j =-40 C
V DS =-5V
35
60
-ID , Drain Current (A)
o
T j =25 C
-ID , Drain Current (A)
13
T j =150 o C
40
30
25
20
15
10
20
2.01E+09
5
0
0
0
1
2
3
4
5
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
7
8
25
50
75
100
125
150
o
T C , Case Temperature ( C )
Fig 12. Maximum Continuous Drain Current
v.s. Case Temperature
4