AWG0123E AWG0123E Data Sheet 30 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG0123E, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a wide range of frequency from 30 MHz to 4000 MHz, being suitable for use in both receiver and transmitter of telecommunication system up to 4 GHz. It has an active bias network for stable current over temperature and process variation. The amplifier is available in an SOT363 package and passes through the stringent DC, RF, and reliability tests. 1.2 Features Gain & Return Loss vs. Frequency (with Bias Tees) 20.6 dB gain at 2000 MHz 40 30 17.0 dBm P1dB at 2000 MHz S21 30.0 dBm OIP3 at 2000 MHz Gain flatness = 2.9 dB at 500 ~ 2500 MHz 50 input & output matching S-parameter (dB) 20 10 0 S11 -10 -20 MTTF > 100 Years S22 -30 Single supply: +3 V -40 0 1.3 1000 2000 3000 Frequency (MHz) 4000 5000 Applications Wide-band application at 500 ~ 3000 MHz IF, CATV application at 30 ~ 1200 MHz SMATV, ONU application at 50 ~ 3000 MHz Wide-band application at 700 ~ 2700 MHz @Vs= +3.3 V, 30 mA 1.4 Package Profile & RoHS Compliance SOT363, 2.1x2.0 mm2, surface mount 1/17 ASB Inc. [email protected] RoHS-compliant June 2017 AWG0123E 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 70 150 300 450 900 2000 2500 2700 MHz Gain 23.0 23.0 22.9 22.7 22.3 20.6 19.8 19.3 dB S11 -14.0 -14.0 -14.0 -13.0 -15.0 -15.0 -12.0 -10.0 dB S22 -20.0 -20.0 -20.0 -20.0 -14.0 -18.0 -18.0 -14.0 dB Noise Figure 1.6 1.5 1.5 1.5 1.5 2.1 2.7 3.0 dB IP31) 30.0 30.0 30.0 30.0 30.0 30.0 25.0 23.0 dBm Output P1dB 17.0 17.0 17.0 17.0 17.0 17.0 16.0 15.5 dBm Current 43 Device Voltage +3 Output 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz. 2.2 Product Specification Supply voltage = +3 V, TA = +25 C, ZO = 50 Parameter Typ Max Unit Frequency 2000 MHz Gain 20.6 dB S11 -15.0 dB S22 -18.0 dB Noise Figure 2.1 dB OIP3 30.0 dBm P1dB 17.0 dBm Current 43 mA Device Voltage +3 V 2.3 2/17 Min Pin Configuration Pin Description 1, 2, 4, 5 Ground 3 RF_INPUT 6 RF_OUT & Bias ASB Inc. Simplified Outline 1 2 3 [email protected] 6 5 4 June 2017 AWG0123E 2.4 Absolute Maximum Ratings Parameters Max. Ratings Operation Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +4 V Operation Junction Temperature +150 C Input RF Power (At 2000 MHz, CW, 50 matched)* + 27 dBm *Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf The max. input power, in principle, depends upon the application frequency and matching circuit. 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 150 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 750 V MM Class A Voltage Level: 100 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 C reflow (Intentionally Blanked) 3/17 ASB Inc. [email protected] June 2017 AWG0123E 3. Application: 500 ~ 3000 MHz 3.1 Application Circuit & Evaluation Board Vdevice = +3 V C4 C3 L1 C2 RF OUT C1 RF IN AWG0123E PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-363-A2 Bill of Material 4/17 Symbol Value Size Description Manufacturer AWG0123E - - MMIC Amplifier ASB C1, C2 100 pF 0603 DC blocking capacitor Murata C3 100 pF 0603 Decoupling capacitor Murata C4 1 F 0603 Decoupling capacitor Murata L1 33 nH 0603 RF choke inductor Murata ASB Inc. [email protected] June 2017 AWG0123E 3.2 Performance Table Supply voltage = +3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 500 900 2000 2500 2700 3000 MHz Gain 22.7 22.3 20.6 19.8 19.3 18.6 dB S11 -12.0 -15.0 -15.0 -12.0 -10.0 -8.0 dB S22 -11.0 -14.0 -18.0 -18.0 -14.0 -11.0 dB Noise Figure 1.5 1.5 2.1 2.7 3.0 3.4 dB IP31) 30.0 30.0 30.0 25.0 23.0 21.0 dBm Output P1dB 17.0 17.0 17.0 16.0 15.5 14.0 dBm Current 43 mA Device Voltage +3 V Output 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz. 3.3 Plot of S-parameter & Stability Factor 30 7 6 10 5 0 4 -10 3 S11 -20 S22 -30 K -40 5/17 1000 ASB Inc. 2000 Frequency (MHz) [email protected] 2 1 S12 0 Stability Factor K S-parameter (dB) S21 20 3000 0 4000 June 2017 AWG0123E 3.4 Plots of Noise Figure and Performances with Temperature 25 0 -10 S11 (dB) Gain (dB) 20 15 10 -40 °C +25 °C 5 -20 -40 °C +25 °C -30 +85 °C +85 °C 0 -40 0 500 1000 1500 2000 2500 3000 3500 4000 Frequency (MHz) 0 500 1000 1500 2000 2500 3000 3500 4000 Frequency (MHz) 60 0 55 50 Current (mA) S22 (dB) -10 -20 -40 °C +25 °C -30 45 40 35 30 +85 °C 25 20 -40 0 -60 500 1000 1500 2000 2500 3000 3500 4000 Frequency (MHz) 25 5 20 4 15 3 -40 -20 0 20 40 Temperature (°C) 60 80 100 NF (dB) Gain (dB) Frequency = 2000 MHz 10 5 2 1 Frequency = 2000 MHz 0 0 -60 6/17 -40 -20 0 20 40 Temperature (°C) 60 80 100 ASB Inc. -60 [email protected] -40 -20 0 20 40 Temperature (°C) 60 80 100 June 2017 AWG0123E 50 20 Frequency = 2000 MHz 40 18 P1dB (dBm) Output IP3 (dBm) Frequency = 2000 MHz 30 -40 °C 20 +25 °C 14 10 +85 °C 0 12 -2 7/17 16 -1 0 1 2 3 4 Output tone power (dBm) 5 ASB Inc. 6 -60 [email protected] -40 -20 0 20 40 Temperature (°C) 60 80 100 June 2017 AWG0123E 4. Application: 30 ~ 1200 MHz (IF, CATV) 4.1 Application Circuit & Evaluation Board Vdevice = +3 V C4 C3 L1 C2 RF OUT C1 RF IN AWG0123E PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-363-A2 Bill of Material 8/17 Symbol Value Size Description Manufacturer AWG0123E - - MMIC Amplifier ASB C1, C2 1 F 0603 DC blocking capacitor Murata C3 - - Not used C4 10 F 0805 Decoupling capacitor Murata L1 3.3 H 0603 RF choke inductor Samsung ASB Inc. [email protected] June 2017 AWG0123E 4.2 Performance Table Supply voltage = +3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 30 70 150 300 450 860 1000 1200 MHz Gain 23.2 23.0 23.0 22.9 22.7 22.1 21.9 21.5 dB S11 -12.0 -14.0 -14.0 -14.0 -13.0 -12.0 -11.0 -11.0 dB S22 -20.0 -20.0 -20.0 -20.0 -20.0 -20.0 -20.0 -18.0 dB Noise Figure 1.7 1.6 1.5 1.5 1.5 1.5 1.5 1.5 dB Output IP31) 30.0 30.0 30.0 30.0 30.0 30.0 30.0 29.0 dBm Output P1dB 17.0 17.0 17.0 17.0 17.0 17.0 17.0 17.0 dBm Current 43 mA Device Voltage +3 V 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz. Plot of S-parameter & Stability Factor S-parameter (dB) 30 7 S21 20 6 10 5 0 4 S11 -10 3 S22 -20 Stability Factor K 4.3 2 S12 -30 1 K -40 0 9/17 300 ASB Inc. 600 Frequency (MHz) [email protected] 900 0 1200 June 2017 AWG0123E 5. Application: 50 ~ 3000 MHz (SMATV, ONU) 5.1 Application Circuit & Evaluation Board Vdevice = +3 V C4 C3 L1 C2 RF OUT C1 RF IN AWG0123E PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-363-A2 Bill of Material 10/17 Symbol Value Size Description Manufacturer AWG0123E - - MMIC Amplifier ASB C1, C2 1 F 0603 DC blocking capacitor Murata C3 - - Not used C4 10 F 0805 Decoupling capacitor Murata L1 1 H 0603 RF choke inductor Samsung ASB Inc. [email protected] June 2017 AWG0123E 5.2 Performance Table Supply voltage = +3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 50 500 1000 2000 2500 3000 MHz Gain 22.8 22.5 21.7 19.2 18.3 16.9 dB S11 -12.0 -13.0 -12.0 -10.0 -8.0 -6.0 dB S22 -18.0 -20.0 -18.0 -12.0 -10.0 -7.0 dB Noise Figure 1.6 1.6 1.6 2.1 2.6 3.3 dB Output IP31) 30.0 30.0 30.0 29.0 25.0 20.0 dBm Output P1dB 17.0 17.0 17.0 17.0 16.0 13.0 dBm Current 43 mA Device Voltage +3 V 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz. 5.3 Plot of S-parameter & Stability Factor 30 7 20 6 10 5 0 4 S11 -10 3 S22 -20 Stability Factor K S-parameter (dB) S21 2 S12 -30 1 K -40 0 11/17 500 1000 ASB Inc. 1500 2000 Frequency (MHz) [email protected] 2500 3000 0 3500 June 2017 AWG0123E 6. Application: 700 ~ 2700 MHz (Wideband, Vs= +3.3 V, 30 mA) 6.1 Application Circuit & Evaluation Board Vsupply = +3.3 V R1 C4 C3 L1 C2 RF OUT C1 RF IN AWG0123E PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-363-A2 Bill of Material 12/17 Symbol Value Size Description Manufacturer AWG0123E - - MMIC Amplifier ASB C1, C2 100 pF 0603 DC blocking capacitor Murata C3 100 pF 0603 Decoupling capacitor Murata C4 1 F 0603 Decoupling capacitor Murata L1 27 nH 0603 RF choke inductor Murata R1 15 ohm 0603 Drop resistor Samsung ASB Inc. [email protected] June 2017 AWG0123E 6.2 Performance Table Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 700 900 1500 2000 2200 2700 MHz Gain 21.0 20.9 20.2 19.5 19.1 18.5 dB S11 -10.0 -11.0 -12.0 -11.0 -10.0 -8.0 dB S22 -15.0 -18.0 -20.0 -20.0 -18.0 -15.0 dB Noise Figure 1.6 1.6 1.8 2.2 2.4 2.8 dB Output IP31) 26.0 27.0 28.0 25.0 23.0 21.0 dBm Output P1dB 14.0 14.5 14.0 13.0 12.0 10.0 dBm Current 30 mA Device Voltage +2.8 V 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz. 6.3 Plot of S-parameter & Stability Factor 40 8 30 7 6 10 5 0 4 S11 -10 3 S22 -20 Stability Factor K S-parameter (dB) S21 20 2 S12 -30 1 K -40 0 13/17 500 1000 ASB Inc. 1500 2000 2500 Frequency (MHz) [email protected] 3000 3500 0 4000 June 2017 AWG0123E 7. Application: 500 ~ 3000 MHz (Wideband, Vs= +3.3 V, 38 mA) 7.1 Application Circuit & Evaluation Board Vsupply = +3.3 V R1 C4 C3 L1 C2 RF OUT C1 RF IN AWG0123E PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-363-A2 Bill of Material 14/17 Symbol Value Size Description Manufacturer AWG0123E - - MMIC Amplifier ASB C1, C2 100 pF 0603 DC blocking capacitor Murata C3 100 pF 0603 Decoupling capacitor Murata C4 1 F 0603 Decoupling capacitor Murata L1 33 nH 0603 RF choke inductor Murata R1 10 ohm 0603 Drop resistor Samsung ASB Inc. [email protected] June 2017 AWG0123E 7.2 Performance Table Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 500 900 2000 2500 2700 3000 MHz Gain 21.8 21.6 20.0 18.9 18.3 17.2 dB S11 -10.0 -13.0 -12.0 -9.0 -7.0 -5.0 dB S22 -13.0 -18.0 -18.0 -14.0 -12.0 -9.0 dB Noise Figure 1.5 1.5 2.1 2.7 3.0 3.4 dB Output IP31) 30.0 28.0 27.0 23.0 21.0 17.0 dBm Output P1dB 15.0 15.0 14.5 12.0 11.0 8.0 dBm Current 38 mA Device Voltage +2.9 V 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz. 7.3 Plot of S-parameter & Stability Factor 30 7 6 10 5 0 4 -10 -20 S12 -30 S11 3 S22 2 1 K -40 0 15/17 500 ASB Inc. Stability Factor, K S-parameters (dB) S21 20 1000 1500 2000 Frequency (MHz) [email protected] 2500 0 3000 June 2017 AWG0123E 8. Package Outline (SOT363, 2.1x2.0x1.0 mm) Symbols W23 A A1 A2 b C D F E1 e e1 L Dimensions (In mm) MIN NOM 0.900 1.000 0.025 0.062 0.875 0.937 0.200 0.300 0.100 0.125 1.900 2.000 1.150 1.250 2.000 2.100 0.65BSC 1.30BSC 0.425REF MAX 1.10 0.10 1.00 0.40 0.15 2.10 1.35 2.20 9. Surface Mount Recommendation (In mm) 1.48 NOTE 0.30 1. The number and size of ground via holes in a circuit board are critical for thermal and RF grounding considerations. 0.25 0.30 1.23 2. Recommend is that the ground via holes be placed on the bottom of the ground leads and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. 16/17 0.50 1.75 0.40 1.33 0.42 ASB Inc. [email protected] June 2017 AWG0123E 10. Recommended Soldering Reflow Profile 260 C 20~40 sec Ramp-up (3 C/sec) Ramp-down (6 C/sec) 200 C 150 C 60~180 sec (End of Datasheet) Copyright 2014-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. 17/17 ASB Inc. [email protected] June 2017