TF8A80 Standard Triac TO-220F Symbol ○ VDRM = 800V 2.T2 IT(RMS) = 8 A ▼▲ ○ 3.Gate ITSM = 84A 1.T1 ○ 1 2 3 Features Repetitive Peak Off-State Voltage : 800V R.M.S On-State Current ( IT(RMS)=8 A ) ◆ High Commutation dv/dt ◆ ◆ General Description This device is fully isolated p ackage suitable for AC switching app lication, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. This device may substitute for BTA08-600, BTB08-600, BT137-600, BCR8PM-12, TM861M/S-L series. Absolute Maximum Ratings Symbol VDRM ( Tj = 25°C unless otherwise specified ) Parameter Repetitive Peak Off-State Voltage Condition Since wave, 50 to 60Hz IT(RMS) R.M.S On-State Current Tj = 125°C , Full Sine wave ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive I2 t Ratings Units 800 V 8.0 A 80/84 A tp=10ms 32 A 2s Average Gate Power Dissipation Tj=125 °C 1 W IGM Peak Gate Current Tj=125 °C 2 A TJ Operating Junction Temperature - 40 ~ 125 °C Storage Temperature - 40 ~ 150 °C I2 t PG(AV) TSTG 1/6 J u l y, 2010. Rev.2 copyright @ Apollo Electron Co., Ltd. All rights reserved. TF8A80 Electrical Characteristics (Tj=25 °C unless otherwise specified) Symbol Conditions IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave Tj = 125 °C VTM Peak On-State Voltage ITM = 11 A, TP=380㎲ Ratings Unit Min. Typ. Max. ─ ─ 2 mA --- ─ 1.55 V ─ ─ 30 ─ ─ 30 I+GT1 Ⅰ I -GT1 Ⅱ I -GT3 Ⅲ ─ ─ 30 V+GT1 Ⅰ ─ ─ 1.5 V-GT1 Ⅱ ─ ─ 1.5 V-GT3 Ⅲ ─ ─ 1.5 0.2 --- ─ 200 -- -- V/㎲ -- -- 50 mA VGD dv/dt IH 2/6 Items Gate Trigger Current Gate Trigger Voltage VD = 12 V, RL=30 Ω VD =12 V, RL=30 Ω Non-Trigger Gate Voltage Tj= 125 °C, VD = VDRM, RL=3.3K Ω Critical Rate of Rise Off-State Voltage Tj = 125 °C, VD=2/3 VDRM Holding Current IT=0.2A mA V V TF8A80 Fig 1. Gate Characteristics Fig 2. On-State Voltage 2 10 VGM (10V) 1 10 On-State Current [A] Gate Voltage [V] PGM (5W) PG(AV) (1W) 25 ℃ IGM (2A) 0 10 o TJ = 25 C 0 10 VGD (0.2V) -1 10 o TJ = 125 C 1 10 1 2 10 0.5 3 10 10 1.0 1.5 10 θ θ = 180 o θ = 150 o θ = 120 2π θ 7 360° 6 θ : Conduction Angle 5 θ = 90 o θ = 60 o θ = 30 4 Allowable Case Temperature [ oC] Power Dissipation [W] π o 3 2 1 0 1 2 3 4 5 6 110 θ = 30 7 RMS On-State Current [A] 8 9 o 360° θ : Conduction Angle 0 1 2 3 o θ = 60 o θ = 90 o θ = 120 o θ = 150 o θ = 180 2π θ 90 10 θ π 100 4 5 6 7 8 9 10 RMS On-State Current [A] Fig 6. Gate Trigger Voltage vs. Junction Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 10 100 80 V o 40 50Hz V o 60 VGT (25 C) 60Hz VGT (t C) Surge On-State Current [A] 3.5 120 80 0 3.0 130 o 8 2.5 Fig 4. On State Current vs. Allowable Case Temperature Fig 3. On State Current vs. Maximum Power Dissipation 9 2.0 On-State Voltage [V] Gate Current [mA] V 1 + GT1 _ GT1 _ GT3 20 0 0 10 1 10 Time (cycles) 2 10 0.1 -50 0 50 100 150 o Junction Temperature [ C] 3/6 TF8A80 Fig 7. Gate Trigger Current vs. Junction Temperature Fig 8. Transient Thermal Impedance 10 o o IGT (t C) IGT (25 C) o Transient Thermal Impedance [ C/W] 10 1 I I I 0.1 -50 0 50 o 4/6 GT1 _ GT3 100 Junction Temperature [ C] + GT1 _ 150 1 0.1 -2 10 -1 10 0 10 Time (sec) 1 10 2 10 TF8A80 TO-220F Package Dimension Sym bol A B C D E F G H I J K L M N MIN 9.88 15.30 2.95 10.30 0.95 1.81 0.50 3.00 4.35 6.20 0.41 2.30 2.53 2.34 IN C H ES TYP 10.08 15.50 3.00 10.50 1.08 1.84 0.70 3.20 4.45 6.40 0.51 2.50 2.73 2.54 MAX 10.28 15.70 3.05 10.70 1.20 1.87 0.90 3.40 4.55 6.60 0.61 2.70 2.93 2.74 25.10 38.86 7.49 26.16 2.41 4.60 1.27 7.62 11.05 15.75 1.03 5.84 6.43 5.94 MILLIMETER S MIN 25.60 39.37 7.62 26.67 2.74 4.67 1.78 8.13 11.30 16.26 1.28 6.35 6.93 6.45 TYP 26.11 39.88 7.75 27.18 3.05 4.75 2.29 8.64 11.56 16.76 1.54 6.86 7.44 6.96 5/6 TF8A80 TO-220F Package Dimension, Forming Dim. mm Typ. Min. 10.4 6.18 9.55 8.4 6.05 1.26 3.17 1.87 2.57 A B C D E F G H I J K L M N O P Max. 10.6 6.44 9.81 8.66 6.15 1.36 3.43 2.13 2.83 Inch Typ. Min. 0.409 0.243 0.376 0.331 0.238 0.050 0.125 0.074 0.101 2.54 5.08 0.100 0.200 2.51 1.23 0.45 0.65 2.62 1.36 0.63 0.78 0.099 0.048 0.018 0.0025 0.103 0.054 0.025 0.031 5.0 3.7 3.2 1.5 φ φ 1 φ 2 0.197 0.146 0.126 0.059 A E F I H B φ φ1 C φ2 L G M 1 D 2 3 N O J P K 6/6 Max. 0.417 0.254 0.386 0.341 0.242 0.054 0.135 0.084 0.111 1. T1 2. T2 3. Gate