Apollo Electron BT137-600 Standard triac Datasheet

TF8A80
Standard Triac
TO-220F
Symbol
○
VDRM = 800V
2.T2
IT(RMS) = 8 A
▼▲
○
3.Gate
ITSM = 84A
1.T1 ○
1
2
3
Features
Repetitive Peak Off-State Voltage : 800V
R.M.S On-State Current ( IT(RMS)=8 A )
◆ High Commutation dv/dt
◆
◆
General Description
This device is fully isolated p ackage suitable for AC switching app lication, phase control application
such as fan speed and temperature modulation control, lighting control and static switching relay.
This device may substitute for BTA08-600, BTB08-600, BT137-600, BCR8PM-12, TM861M/S-L series.
Absolute Maximum Ratings
Symbol
VDRM
( Tj = 25°C unless otherwise specified )
Parameter
Repetitive Peak Off-State Voltage
Condition
Since wave, 50 to 60Hz
IT(RMS)
R.M.S On-State Current
Tj = 125°C , Full Sine wave
ITSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
I2 t
Ratings
Units
800
V
8.0
A
80/84
A
tp=10ms
32
A 2s
Average Gate Power Dissipation
Tj=125 °C
1
W
IGM
Peak Gate Current
Tj=125 °C
2
A
TJ
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C
I2 t
PG(AV)
TSTG
1/6
J u l y, 2010. Rev.2
copyright @ Apollo Electron Co., Ltd. All rights reserved.
TF8A80
Electrical Characteristics (Tj=25 °C unless otherwise specified)
Symbol
Conditions
IDRM
Repetitive Peak Off-State
Current
VD = VDRM, Single Phase, Half Wave
Tj = 125 °C
VTM
Peak On-State Voltage
ITM = 11 A, TP=380㎲
Ratings
Unit
Min.
Typ.
Max.
─
─
2
mA
---
─
1.55
V
─
─
30
─
─
30
I+GT1
Ⅰ
I -GT1
Ⅱ
I -GT3
Ⅲ
─
─
30
V+GT1
Ⅰ
─
─
1.5
V-GT1
Ⅱ
─
─
1.5
V-GT3
Ⅲ
─
─
1.5
0.2
---
─
200
--
--
V/㎲
--
--
50
mA
VGD
dv/dt
IH
2/6
Items
Gate Trigger Current
Gate Trigger Voltage
VD = 12 V, RL=30 Ω
VD =12 V, RL=30 Ω
Non-Trigger Gate Voltage
Tj= 125 °C, VD = VDRM, RL=3.3K Ω
Critical Rate of Rise Off-State
Voltage
Tj = 125 °C,
VD=2/3 VDRM
Holding Current
IT=0.2A
mA
V
V
TF8A80
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
2
10
VGM (10V)
1
10
On-State Current [A]
Gate Voltage [V]
PGM (5W)
PG(AV) (1W)
25 ℃
IGM (2A)
0
10
o
TJ = 25 C
0
10
VGD (0.2V)
-1
10
o
TJ = 125 C
1
10
1
2
10
0.5
3
10
10
1.0
1.5
10
θ
θ = 180
o
θ = 150
o
θ = 120
2π
θ
7
360°
6
θ : Conduction Angle
5
θ = 90
o
θ = 60
o
θ = 30
4
Allowable Case Temperature [ oC]
Power Dissipation [W]
π
o
3
2
1
0
1
2
3
4
5
6
110
θ = 30
7
RMS On-State Current [A]
8
9
o
360°
θ : Conduction Angle
0
1
2
3
o
θ = 60
o
θ = 90
o
θ = 120
o
θ = 150 o
θ = 180
2π
θ
90
10
θ
π
100
4
5
6
7
8
9
10
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
10
100
80
V
o
40
50Hz
V
o
60
VGT (25 C)
60Hz
VGT (t C)
Surge On-State Current [A]
3.5
120
80
0
3.0
130
o
8
2.5
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On State Current vs.
Maximum Power Dissipation
9
2.0
On-State Voltage [V]
Gate Current [mA]
V
1
+
GT1
_
GT1
_
GT3
20
0
0
10
1
10
Time (cycles)
2
10
0.1
-50
0
50
100
150
o
Junction Temperature [ C]
3/6
TF8A80
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
10
o
o
IGT (t C)
IGT (25 C)
o
Transient Thermal Impedance [ C/W]
10
1
I
I
I
0.1
-50
0
50
o
4/6
GT1
_
GT3
100
Junction Temperature [ C]
+
GT1
_
150
1
0.1
-2
10
-1
10
0
10
Time (sec)
1
10
2
10
TF8A80
TO-220F Package Dimension
Sym bol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MIN
9.88
15.30
2.95
10.30
0.95
1.81
0.50
3.00
4.35
6.20
0.41
2.30
2.53
2.34
IN C H ES
TYP
10.08
15.50
3.00
10.50
1.08
1.84
0.70
3.20
4.45
6.40
0.51
2.50
2.73
2.54
MAX
10.28
15.70
3.05
10.70
1.20
1.87
0.90
3.40
4.55
6.60
0.61
2.70
2.93
2.74
25.10
38.86
7.49
26.16
2.41
4.60
1.27
7.62
11.05
15.75
1.03
5.84
6.43
5.94
MILLIMETER S
MIN
25.60
39.37
7.62
26.67
2.74
4.67
1.78
8.13
11.30
16.26
1.28
6.35
6.93
6.45
TYP
26.11
39.88
7.75
27.18
3.05
4.75
2.29
8.64
11.56
16.76
1.54
6.86
7.44
6.96
5/6
TF8A80
TO-220F Package Dimension, Forming
Dim.
mm
Typ.
Min.
10.4
6.18
9.55
8.4
6.05
1.26
3.17
1.87
2.57
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Max.
10.6
6.44
9.81
8.66
6.15
1.36
3.43
2.13
2.83
Inch
Typ.
Min.
0.409
0.243
0.376
0.331
0.238
0.050
0.125
0.074
0.101
2.54
5.08
0.100
0.200
2.51
1.23
0.45
0.65
2.62
1.36
0.63
0.78
0.099
0.048
0.018
0.0025
0.103
0.054
0.025
0.031
5.0
3.7
3.2
1.5
φ
φ 1
φ 2
0.197
0.146
0.126
0.059
A
E
F
I
H
B
φ
φ1
C
φ2
L
G
M
1
D
2
3
N
O
J
P
K
6/6
Max.
0.417
0.254
0.386
0.341
0.242
0.054
0.135
0.084
0.111
1. T1
2. T2
3. Gate
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