SeCoS BAS16TW Multi-chip switching diode array Datasheet

BAS16TW
Multi-Chip Switching Diode Array
Elektronische Bauelemente
RoHS Compliant Product
FEATURES
·
·
·
·
A suffix of "-C" specifies halogen & lead-free
SOT-363
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
.055(1.40)
.047(1.20)
For General Purpose Switching Applications
o
.026TYP
(0.65TYP)
8
o
0
.021REF
(0.525)REF
High Conductance
.053(1.35)
.045(1.15)
.096(2.45)
.085(2.15)
.018(0.46)
.010(0.26)
.014(0.35)
.006(0.15)
A
MAXIMUM RATINGS
.006(0.15)
.003(0.08)
.087(2.20)
.079(2.00)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
75
Vdc
Peak Forward Current
IF
150
mAdc
IFM(surge)
400
mAdc
Peak Forward Surge Current
.004(0.10)
.000(0.00)
.043(1.10)
.035(0.90)
.039(1.00)
.035(0.90)
Dimensions in inches and (millimeters)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
PD
200
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
PD
250
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
– 55 to +150
°C
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BAS16TW = KA2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
—
—
—
1.0
50
30
75
—
—
—
—
—
715
855
1000
1250
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 75 Vdc)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 µAdc)
µAdc
IR
V(BR)
Vdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
—
2.0
pF
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
VFR
—
1.75
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 100 Ω)
trr
—
4.0
ns
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 Ω)
QS
—
45
pC
1.FR–5 = 1.0 X 0.75 X 0.062 in.
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
mV
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Any changing of specification will not be informed individual
Page 1 of 2
BAS16TW
Elektronische Bauelemente
Multi-Chip Switching Diode Array
820 Ω
+10 V
2.0 k
tr
0.1 µF
100 µH
tp
IF
IF
t
trr
10%
t
0.1 µF
90%
DUT
50 Ω Input
Sampling
Oscilloscopes
50 Ω Output
Pulse
Generator
IR(REC) = 1.0 mA
IR
VR
Output Pulse
(IF = IR = 10 mA; Measured
at IR(REC) = 1.0 mA)
Input Signal
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
10
100
TA = 85°C
TA = 125°C
1.0
IR , Reverse Current (µA)
IF, Forward Current (mA) (mA)
TA = 150°C
10
TA = – 40°C
1.0
TA = 25°C
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0.1
0.2
0.4
0.6
0.8
VF, Forward Voltage (V)
1.0
10
0
1.2
Figure 2. Forward Voltage
20
30
VR, Reverse Voltage (V)
40
50
Figure 3. Leakage Current
CD, Diode Capacitance (pF)
0.68
0.64
0.60
0.56
0.52
0
2
4
6
8
VR, Reverse Voltage (V)
Figure 4. Capacitance
http://www.eris.com.tw
01-Jan-2006 Rev. B
e-mail:[email protected]
Any changing of specification will not be informed individual
Page 2 of 2
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