BAS16TW Multi-Chip Switching Diode Array Elektronische Bauelemente RoHS Compliant Product FEATURES · · · · A suffix of "-C" specifies halogen & lead-free SOT-363 Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion .055(1.40) .047(1.20) For General Purpose Switching Applications o .026TYP (0.65TYP) 8 o 0 .021REF (0.525)REF High Conductance .053(1.35) .045(1.15) .096(2.45) .085(2.15) .018(0.46) .010(0.26) .014(0.35) .006(0.15) A MAXIMUM RATINGS .006(0.15) .003(0.08) .087(2.20) .079(2.00) Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 150 mAdc IFM(surge) 400 mAdc Peak Forward Surge Current .004(0.10) .000(0.00) .043(1.10) .035(0.90) .039(1.00) .035(0.90) Dimensions in inches and (millimeters) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C PD 200 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W PD 250 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg – 55 to +150 °C Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING BAS16TW = KA2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max — — — 1.0 50 30 75 — — — — — 715 855 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 75 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 µAdc) µAdc IR V(BR) Vdc Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Diode Capacitance (VR = 0, f = 1.0 MHz) CD — 2.0 pF Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) VFR — 1.75 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 Ω) trr — 4.0 ns Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 Ω) QS — 45 pC 1.FR–5 = 1.0 X 0.75 X 0.062 in. http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B mV 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. Any changing of specification will not be informed individual Page 1 of 2 BAS16TW Elektronische Bauelemente Multi-Chip Switching Diode Array 820 Ω +10 V 2.0 k tr 0.1 µF 100 µH tp IF IF t trr 10% t 0.1 µF 90% DUT 50 Ω Input Sampling Oscilloscopes 50 Ω Output Pulse Generator IR(REC) = 1.0 mA IR VR Output Pulse (IF = IR = 10 mA; Measured at IR(REC) = 1.0 mA) Input Signal Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 10 100 TA = 85°C TA = 125°C 1.0 IR , Reverse Current (µA) IF, Forward Current (mA) (mA) TA = 150°C 10 TA = – 40°C 1.0 TA = 25°C TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 VF, Forward Voltage (V) 1.0 10 0 1.2 Figure 2. Forward Voltage 20 30 VR, Reverse Voltage (V) 40 50 Figure 3. Leakage Current CD, Diode Capacitance (pF) 0.68 0.64 0.60 0.56 0.52 0 2 4 6 8 VR, Reverse Voltage (V) Figure 4. Capacitance http://www.eris.com.tw 01-Jan-2006 Rev. B e-mail:[email protected] Any changing of specification will not be informed individual Page 2 of 2