HOTTECH BZX55C3V3 Zener diode Datasheet

Glass-Encapsulate Diodes
ZENER DIODES
BZX55C2V0---BZX55C100
FEATURES
Silicon planar power zener diodes
The zener voltages are graded according to the international
E 24 standard. Standard zener voltage tolerance is ±5%. Replace
3.9 Max
27.5 Min
27.5 Min
suffix "C". with "B" for ±2%, with "A " for ±1%.
other voltage tolerance and other zener voltage are
available upon request.
0.5 Max
1.9 Max
DO-35
MECHANICAL DATA
Dimensions in millimeters
Case:DO-35, Glass Case
Terminals: Solderable per MIL-STD-202, method 208
Polarity: Cathode band
Marking: Type number
Approx. Weight: 0.13 grams.
ABSOLUTE MAXIMUM RATINGS (TA=25
Parameter
unless otherwise noted)
Symbol
Power Dissipation
Ptot
Junction Temperature
Tj
Storage Temperature Range
TS
Value
Unit
5001)
mW
175
- 55 to + 175
O
W
C
C
O
1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
unless otherwise specified)
Symbol
Max.
Thermal Resistance Junction to Ambient Air
RthA
0.3
Forward Voltage
VF
1
1)
Unit
K/mW
V
at IF = 100 mA
1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P3-P1
Glass-Encapsulate Diodes
BZX55C2V0---BZX55C100
Zener Voltage Range
Type
Dynamic Resistance
Temp.
Coefficient of
Zener Voltage
Reverse Leakage Current
Ta =25OC
Ta=125OC
Max.(µA)
Max.(µA)
V
1
100
200
1
-0.09...-0.06
600
1
75
160
1
-0.09...-0.06
600
1
50
100
1
-0.09...-0.06
85
600
1
10
50
1
-0.09...-0.06
Vznom
V
lZT
mA
VZT
V
rZJT
Max.(Ω)
rZJK
Max.(Ω)
BZX55C2V0
2
5
1.8...2.15
85
600
BZX55C2V2
2.2
5
2.08...2.33
85
BZX55C2V4
2.4
5
2.28...2.56
85
BZX55C2V7
2.7
5
2.5...2.9
IZK
mA
IR at VR
TYKZ
%/K
BZX55C3V0
3
5
2.8...3.2
85
600
1
4
40
1
-0.08...-0.05
BZX55C3V3
3.3
5
3.1...3.5
85
600
1
2
40
1
-0.08...-0.05
BZX55C3V6
3.6
5
3.4...3.8
85
600
1
2
40
1
-0.08...-0.05
BZX55C3V9
3.9
5
3.7...4.1
85
600
1
2
40
1
-0.08...-0.05
BZX55C4V3
4.3
5
4...4.6
75
600
1
1
20
1
-0.06...-0.03
BZX55C4V7
4.7
5
4.4...5
60
600
1
0.5
10
1
-0.05...+0.02
BZX55C5V1
5.1
5
4.8...5.4
35
550
1
0.1
2
1
-0.02...+0.02
BZX55C5V6
5.6
5
5.2...6
25
450
1
0.1
2
1
-0.05...+0.05
BZX55C6V2
6.2
5
5.8...6.6
10
200
1
0.1
2
2
0.03...0.06
BZX55C6V8
6.8
5
6.4...7.2
8
150
1
0.1
2
3
0.03...0.07
BZX55C7V5
7.5
5
7...7.9
7
50
1
0.1
2
5
0.03...0.07
BZX55C8V2
8.2
5
7.7...8.7
7
50
1
0.1
2
6.2
0.03...0.08
BZX55C9V1
9.1
5
8.5...9.6
10
50
1
0.1
2
6.8
0.03...0.09
BZX55C10
10
5
9.4...10.6
15
70
1
0.1
2
7.5
0.03...0.1
BZX55C11
11
5
10.4...11.6
20
70
1
0.1
2
8.2
0.03...0.11
BZX55C12
12
5
11.4...12.7
20
90
1
0.1
2
9.1
0.03...0.11
BZX55C13
13
5
12.4...14.1
26
110
1
0.1
2
10
0.03...0.11
BZX55C15
15
5
13.8...15.6
30
110
1
0.1
2
11
0.03...0.11
BZX55C16
16
5
15.3...17.1
40
170
1
0.1
2
12
0.03...0.11
BZX55C18
18
5
16.8...19.1
50
170
1
0.1
2
13
0.03...0.11
BZX55C20
20
5
18.8...21.2
55
220
1
0.1
2
15
0.03...0.11
BZX55C22
22
5
20.8...23.3
55
220
1
0.1
2
16
0.04...0.12
BZX55C24
24
5
22.8...25.6
80
220
1
0.1
2
18
0.04...0.12
BZX55C27
27
5
25.1...28.9
80
220
1
0.1
2
20
0.04...0.12
BZX55C30
30
5
28...32
80
220
1
0.1
2
22
0.04...0.12
BZX55C33
33
5
31...35
80
220
1
0.1
2
24
0.04...0.12
BZX55C36
36
5
34...38
80
220
1
0.1
2
27
0.04...0.12
BZX55C39
39
2.5
37...41
90
500
0.5
0.1
5
30
0.04...0.12
BZX55C43
43
2.5
40...46
90
500
0.5
0.1
5
33
0.04...0.12
BZX55C47
47
2.5
44...50
110
600
0.5
0.1
5
36
0.04...0.12
BZX55C51
51
2.5
48...54
125
700
0.5
0.1
10
39
0.04...0.12
BZX55C56
56
2.5
52...60
135
700
0.5
0.1
10
43
0.04...0.12
BZX55C62
62
2.5
58...66
150
1000
0.5
0.1
10
47
0.04...0.12
BZX55C68
68
2.5
64...72
200
1000
0.5
0.1
10
51
0.04...0.12
BZX55C75
75
2.5
70...79
250
1000
0.5
0.1
10
56
0.04...0.12
BZX55C82
82
2.5
77...87
300
1500
0.25
0.1
10
62
0.05...0.12
BZX55C91
91
1
85...96
450
2000
0.1
0.1
10
68
0.05...0.12
BZX55C100
100
1
94...106
450
5000
0.1
0.1
10
75
0.05...0.12
NOTE:Measured with pulses Tp=20m
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P3-P2
Glass-Encapsulate Diodes
BZX55C2V0---BZX55C100
Typical Characteristics
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P3-P3
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