Glass-Encapsulate Diodes ZENER DIODES BZX55C2V0---BZX55C100 FEATURES Silicon planar power zener diodes The zener voltages are graded according to the international E 24 standard. Standard zener voltage tolerance is ±5%. Replace 3.9 Max 27.5 Min 27.5 Min suffix "C". with "B" for ±2%, with "A " for ±1%. other voltage tolerance and other zener voltage are available upon request. 0.5 Max 1.9 Max DO-35 MECHANICAL DATA Dimensions in millimeters Case:DO-35, Glass Case Terminals: Solderable per MIL-STD-202, method 208 Polarity: Cathode band Marking: Type number Approx. Weight: 0.13 grams. ABSOLUTE MAXIMUM RATINGS (TA=25 Parameter unless otherwise noted) Symbol Power Dissipation Ptot Junction Temperature Tj Storage Temperature Range TS Value Unit 5001) mW 175 - 55 to + 175 O W C C O 1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Max. Thermal Resistance Junction to Ambient Air RthA 0.3 Forward Voltage VF 1 1) Unit K/mW V at IF = 100 mA 1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P3-P1 Glass-Encapsulate Diodes BZX55C2V0---BZX55C100 Zener Voltage Range Type Dynamic Resistance Temp. Coefficient of Zener Voltage Reverse Leakage Current Ta =25OC Ta=125OC Max.(µA) Max.(µA) V 1 100 200 1 -0.09...-0.06 600 1 75 160 1 -0.09...-0.06 600 1 50 100 1 -0.09...-0.06 85 600 1 10 50 1 -0.09...-0.06 Vznom V lZT mA VZT V rZJT Max.(Ω) rZJK Max.(Ω) BZX55C2V0 2 5 1.8...2.15 85 600 BZX55C2V2 2.2 5 2.08...2.33 85 BZX55C2V4 2.4 5 2.28...2.56 85 BZX55C2V7 2.7 5 2.5...2.9 IZK mA IR at VR TYKZ %/K BZX55C3V0 3 5 2.8...3.2 85 600 1 4 40 1 -0.08...-0.05 BZX55C3V3 3.3 5 3.1...3.5 85 600 1 2 40 1 -0.08...-0.05 BZX55C3V6 3.6 5 3.4...3.8 85 600 1 2 40 1 -0.08...-0.05 BZX55C3V9 3.9 5 3.7...4.1 85 600 1 2 40 1 -0.08...-0.05 BZX55C4V3 4.3 5 4...4.6 75 600 1 1 20 1 -0.06...-0.03 BZX55C4V7 4.7 5 4.4...5 60 600 1 0.5 10 1 -0.05...+0.02 BZX55C5V1 5.1 5 4.8...5.4 35 550 1 0.1 2 1 -0.02...+0.02 BZX55C5V6 5.6 5 5.2...6 25 450 1 0.1 2 1 -0.05...+0.05 BZX55C6V2 6.2 5 5.8...6.6 10 200 1 0.1 2 2 0.03...0.06 BZX55C6V8 6.8 5 6.4...7.2 8 150 1 0.1 2 3 0.03...0.07 BZX55C7V5 7.5 5 7...7.9 7 50 1 0.1 2 5 0.03...0.07 BZX55C8V2 8.2 5 7.7...8.7 7 50 1 0.1 2 6.2 0.03...0.08 BZX55C9V1 9.1 5 8.5...9.6 10 50 1 0.1 2 6.8 0.03...0.09 BZX55C10 10 5 9.4...10.6 15 70 1 0.1 2 7.5 0.03...0.1 BZX55C11 11 5 10.4...11.6 20 70 1 0.1 2 8.2 0.03...0.11 BZX55C12 12 5 11.4...12.7 20 90 1 0.1 2 9.1 0.03...0.11 BZX55C13 13 5 12.4...14.1 26 110 1 0.1 2 10 0.03...0.11 BZX55C15 15 5 13.8...15.6 30 110 1 0.1 2 11 0.03...0.11 BZX55C16 16 5 15.3...17.1 40 170 1 0.1 2 12 0.03...0.11 BZX55C18 18 5 16.8...19.1 50 170 1 0.1 2 13 0.03...0.11 BZX55C20 20 5 18.8...21.2 55 220 1 0.1 2 15 0.03...0.11 BZX55C22 22 5 20.8...23.3 55 220 1 0.1 2 16 0.04...0.12 BZX55C24 24 5 22.8...25.6 80 220 1 0.1 2 18 0.04...0.12 BZX55C27 27 5 25.1...28.9 80 220 1 0.1 2 20 0.04...0.12 BZX55C30 30 5 28...32 80 220 1 0.1 2 22 0.04...0.12 BZX55C33 33 5 31...35 80 220 1 0.1 2 24 0.04...0.12 BZX55C36 36 5 34...38 80 220 1 0.1 2 27 0.04...0.12 BZX55C39 39 2.5 37...41 90 500 0.5 0.1 5 30 0.04...0.12 BZX55C43 43 2.5 40...46 90 500 0.5 0.1 5 33 0.04...0.12 BZX55C47 47 2.5 44...50 110 600 0.5 0.1 5 36 0.04...0.12 BZX55C51 51 2.5 48...54 125 700 0.5 0.1 10 39 0.04...0.12 BZX55C56 56 2.5 52...60 135 700 0.5 0.1 10 43 0.04...0.12 BZX55C62 62 2.5 58...66 150 1000 0.5 0.1 10 47 0.04...0.12 BZX55C68 68 2.5 64...72 200 1000 0.5 0.1 10 51 0.04...0.12 BZX55C75 75 2.5 70...79 250 1000 0.5 0.1 10 56 0.04...0.12 BZX55C82 82 2.5 77...87 300 1500 0.25 0.1 10 62 0.05...0.12 BZX55C91 91 1 85...96 450 2000 0.1 0.1 10 68 0.05...0.12 BZX55C100 100 1 94...106 450 5000 0.1 0.1 10 75 0.05...0.12 NOTE:Measured with pulses Tp=20m GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P3-P2 Glass-Encapsulate Diodes BZX55C2V0---BZX55C100 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P3-P3