DCR2950W65 Phase Control Thyristor Preliminary Information DS5871-3 July 2011 (LN28551) FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 6500V 2945A 38500A 1500V/µs 300A/µs * Higher dV/dt selections available High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V DCR2950W65* DCR2950W60 DCR2950W55 DCR2950W50 6500 6000 5500 5000 Conditions Tvj = -40° C to 125° C, IDRM = IRRM = 300mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. 0 0 * 6200V @ -40 C, 6500V @ 0 C ORDERING INFORMATION Outline type code: W (See Package Details for further information) Fig. 1 Package outline When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR2950W65 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR2950W65 SEMICONDUCTOR CURRENT RATINGS Tcase = 60° C unless stated otherwise Symbol Parameter Test Conditions Max. Units 2945 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 4629 A Continuous (direct) on-state current - 4430 A IT Half wave resistive load SURGE RATINGS Symbol ITSM 2 It Parameter Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125° C 38.85 kA VR = 0 7.55 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Test Conditions Double side cooled DC - 0.00631 ° C/W Single side cooled Anode DC - 0.01115 ° C/W Cathode DC - 0.01453 ° C/W Double side - 0.0014 ° C/W - 0.0028 ° C/W - 125 °C Clamping force 76.0kN (with mounting compound) Blocking VDRM / VRRM Single side Tvj Virtual junction temperature Tstg Storage temperature range -55 125 °C Fm Clamping force 68.0 84.0 kN 2/10 www.dynexsemi.com DCR2950W65 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125° C - 300 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125° C, gate open - 1500 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 150 A/µs Gate source 30V, 10, Non-repetitive - 300 A/µs tr < 0.5µs, Tj = 125° C VT(TO) rT tgd Threshold voltage – Low level 500 to 2400A at Tcase = 125° C - 0.94 V Threshold voltage – High level 2400 to 7200A at Tcase = 125° C - 1.13 V On-state slope resistance – Low level 500A to 2400A at Tcase = 125° C - 0.343 m On-state slope resistance – High level 2400A to 7200A at Tcase = 125° C - 0.264 m VD = 67% VDRM, gate source 30V, 10 - 3 µs - 1200 µs 2800 6400 µC Delay time tr = 0.5µs, Tj = 25° C tq Turn-off time Tj = 125° C, VR = 200V, dI/dt = 1A/µs, dVDR/dt = 20V/µs linear QS Stored charge IT = 2000A, Tj = 125° C, dI/dt – 1A/µs, IL Latching current Tj = 25° C, VD = 5V - 3 A IH Holding current Tj = 25° C, RG-K = , ITM = 500A, IT = 5A - 300 mA 3/10 www.dynexsemi.com DCR2950W65 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25° C 1.5 V VGD Gate non-trigger voltage At 50% VDRM, Tcase = 125°C 0.4 V IGT Gate trigger current VDRM = 5V, Tcase = 25° C 250 mA IGD Gate non-trigger current At 50% VDRM, Tcase = 125°C 15 mA CURVES Instantaneous on-state current IT - (A) 7000 6000 5000 4000 min 125°C max 125°C 3000 min 25°C max 25°C 2000 1000 0 0.5 1.5 2.5 3.5 Instantaneous on-state voltage VT - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = 0.914146 B = -0.03808 C = 0.00016 D = 0.015311 these values are valid for Tj = 125° C for IT 500A to 7200A 4/10 www.dynexsemi.com DCR2950W65 SEMICONDUCTOR 130 20 Maximum case temperature, T case ( oC ) Mean power dissipation - (kW) 180 120 90 60 30 120 18 16 14 12 10 8 180 120 90 60 30 6 4 110 100 90 80 70 60 50 40 30 20 2 10 0 0 0 1000 2000 3000 4000 0 5000 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) 5000 Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave 180 120 90 60 30 120 110 100 90 80 70 60 50 40 30 20 20 18 Mean power dissipation - (kW) Maximum heatsink temperature, T Heatsink - ( oC ) 130 Fig.4 Maximum permissible case temperature, double side cooled – sine wave 16 14 12 10 8 d.c. 180 120 90 60 30 6 4 10 2 0 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) 0 0 1000 2000 3000 4000 5000 6000 7000 Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave Fig.6 On-state power dissipation – rectangular wave 5/10 www.dynexsemi.com DCR2950W65 SEMICONDUCTOR 130 d.c. 180 120 90 60 30 120 110 100 90 d.c. 180 120 90 60 30 120 Maximum heatsik temperature Theatsink - (oC) Maximum permissible case temperature , Tcase - (°C) 130 80 70 60 50 40 30 20 10 110 100 90 80 70 60 50 40 30 20 10 0 0 0 1000 2000 3000 4000 5000 6000 7000 0 Mean on-state current, IT(AV) - (A) Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave 16 Double side cooled Anode Side Cooling 4000 5000 6000 Cathode side cooled 2 1.2993 3 2.8048 4 1.3305 0.0106818 0.058404 0.3584979 1.1285 1.5197 3.2398 5.7622 0.6312 0.0170581 0.2424644 6.013 15.364 1.4106 2.4667 6.7451 3.9054 0.0158344 0.1786951 3.6201 6.196 Ri (°C/kW) Ti (s) 12 1 0.8816 Ri (°C/kW) Ti (s) Cathode Sided Cooling 3000 Ri (°C/kW) Ti (s) Anode side cooled Thermal Impedance, Zth(j-c) - ( °C/kW) 2000 Mean on-state current, IT(AV) - (A) Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave Double Side Cooling 14 1000 Zth = [Ri x ( 1-exp. (t/ti))] [1] 10 8 Rth(j-c) Conduction 6 Tables show the increments of thermal resistance R th(j-c) when the device operates at conduction angles other than d.c. 4 Double side cooling Zth (z) 2 0 0.001 0.01 0.1 1 10 100 ° 180 120 90 60 30 15 sine. 1.00 1.16 1.33 1.48 1.61 1.66 rect. 0.67 0.97 1.13 1.31 1.51 1.61 Anode Side Cooling Zth (z) ° 180 120 90 60 30 15 sine. 0.94 1.08 1.23 1.37 1.47 1.52 rect. 0.64 0.91 1.06 1.22 1.38 1.47 Cathode Sided Cooling Zth (z) ° 180 120 90 60 30 15 sine. 0.95 1.09 1.25 1.38 1.49 1.54 rect. 0.65 0.92 1.07 1.23 1.40 1.49 Time ( s ) Fig.9 Maximum (limit) transient thermal impedance – junction to case (° C/kW) 6/10 www.dynexsemi.com DCR2950W65 SEMICONDUCTOR Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current 40,000 800 35,000 700 I - (A) Reverse recovery current,RR QS max = 7066.1*(di/dt)0.4891 Stored Charge, QS - (uC) 30,000 25,000 20,000 QS min = 3539.7*(di/dt)0.5991 15,000 10,000 Conditions: Tj = 125oC VRpeak ~ 3900V, VRM ~ 2600V snubber as apprpriate to control reverse volts 5,000 5 10 15 20 25 30 Rate of decay of on-state current, di/dt - (A/us) Fig.10 Reverse recovery charge 600 500 400 IRR min = 41.906*(di/dt)0.8147 300 200 Conditions: Tj = 125oC VRpeak ~ 3900V, VRM ~ 2600V snubber as apprpriate to control reverse volts 100 0 0 IRR max = 59.812*(di/dt)0.7589 0 0 5 10 15 20 25 30 Rate of decay of on-state current, di/dt - (A/us) Fig.11 Reverse recovery current 7/10 www.dynexsemi.com DCR2950W65 SEMICONDUCTOR 10 Gate trigger voltage, VGT - (V) 9 Pulse Width us 100 200 500 1000 10000 8 7 Pulse Power PGM (Watts) Frequency Hz 50 100 150 150 150 150 150 150 150 100 20 - 400 150 125 100 25 - Upper Limit 6 5 Preferred gate drive area 4 3 2 Tj = -40oC Tj = 25oC Lower Limit Tj = 125oC 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Gate trigger current IGT, - (A) Fig12 Gate Characteristics 30 Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C Gate trigger voltage, VGT - (V) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate trigger current, IGT - (A) Fig. 13 Gate characteristics 8/10 www.dynexsemi.com DCR2950W65 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Device DCR1594SW28 DCR1595SW42 DCR1596SW52 DCR5450W22 DCR4910W28 DCR4100W42 DCR3640W52 DCR2950W65 DCR2450W85 Maximum Minimum Thickness Thickness (mm) (mm) 27.34 26.79 27.57 27.02 27.69 27.14 27.265 26.715 27.34 26.79 27.57 27.02 27.69 27.14 27.95 27.4 28.31 27.76 Clamping force: 76kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: W Fig.14 Package outline 9/10 www.dynexsemi.com DCR2950W65 SEMICONDUCTOR Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com Phone: +(0) 1522 502753 / 502901 Fax: +(0) 1522 500020 e-mail: [email protected] Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, appli ed or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee exp ress or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 www.dynexsemi.com