CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F 18-Mbit (512K x 36/1M x 18) Pipelined SRAM Functional Description [1] Features • Supports bus operation up to 250 MHz The CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F SRAM integrates 524,288 x 36 and 1,048,576 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive edge triggered clock input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining chip enable (CE1), depth-expansion chip enables (CE2 and CE3 [2]), burst control inputs (ADSC, ADSP, and ADV), write enables (BWX, and BWE), and global write (GW). Asynchronous inputs include the output enable (OE) and the ZZ pin. • Available speed grades are 250, 200, and 167 MHz • Registered inputs and outputs for pipelined operation • 3.3V core power supply • 2.5V or 3.3V IO power supply • Fast clock-to-output times — 2.6 ns (for 250 MHz device) • Provides high-performance 3-1-1-1 access rate • User selectable burst counter supporting Intel® Pentium® interleaved or linear burst sequences Addresses and chip enables are registered at rising edge of clock when address strobe processor (ADSP) or address strobe controller (ADSC) are active. Subsequent burst addresses can be internally generated as they are controlled by the advance pin (ADV). • Separate processor and controller address strobes • Synchronous self-timed write • Asynchronous output enable Address, data inputs, and write controls are registered on-chip to initiate a self-timed write cycle.This part supports byte write operations (see Pin Definitions on page 6 and Truth Table [4, 5, 6, 7, 8] on page 9 for further details). Write cycles can be one to two or four bytes wide as controlled by the byte write control inputs. GW when active LOW causes all bytes to be written. • Single cycle chip deselect • CY7C1380D/CY7C1382D available in JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non Pb-free 165-ball FBGA package. CY7C1380F/CY7C1382F available in Pb-free and non Pb-free 119-ball BGA package The CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F operates from a +3.3V core power supply while all outputs operate with a +2.5 or +3.3V power supply. All inputs and outputs are JEDEC-standard and JESD8-5-compatible. • IEEE 1149.1 JTAG-Compatible Boundary Scan • ZZ sleep mode option Selection Guide 250 MHz 200 MHz 167 MHz Unit Maximum Access Time 2.6 3.0 3.4 ns Maximum Operating Current 350 300 275 mA Maximum CMOS Standby Current 70 70 70 mA Notes: 1. For best practices or recommendations, please refer to the Cypress application note AN1064, SRAM System Design Guidelines on www.cypress.com. 2. CE3, CE2 are for TQFP and 165 FBGA packages only. 119 BGA is offered only in 1 chip enable. Cypress Semiconductor Corporation Document #: 38-05543 Rev. *E • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised Feburary 07, 2007 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Logic Block Diagram – CY7C1380D/CY7C1380F [3] (512K x 36) A0, A1, A ADDRESS REGISTER 2 A [1:0] MODE ADV CLK Q1 BURST COUNTER CLR AND LOGIC ADSC Q0 ADSP BW D DQ D , DQP D BYTE WRITE REGISTER DQ D ,DQP D BYTE WRITE DRIVER BW C DQ C , DQP C BYTE WRITE REGISTER DQ C , DQP C BYTE WRITE DRIVER DQ B , DQP B BYTE WRITE REGISTER DQ B , DQP B BYTE WRITE DRIVER BW B GW CE 1 CE 2 CE 3 OE ZZ ENABLE REGISTER SENSE AMPS OUTPUT REGISTERS OUTPUT BUFFERS E DQs DQP A DQP B DQP C DQP D DQ A , DQP A BYTE WRITE DRIVER DQ A , DQP A BYTE WRITE REGISTER BW A BWE MEMORY ARRAY INPUT REGISTERS PIPELINED ENABLE SLEEP CONTROL Logic Block Diagram – CY7C1382D/CY7C1382F [3] (1M x 18) A0, A1, A ADDRESS REGISTER 2 BURST Q1 COUNTER AND LOGIC ADV CLK ADSC BW B DQ B, DQP B WRITE DRIVER DQ B, DQP B WRITE REGISTER MEMORY ARRAY BW A SENSE OUTPUT OUTPUT BUFFERS DQs DQP A DQP B DQ A, DQP A WRITE DRIVER DQ A, DQP A WRITE REGISTER BWE GW CE 1 CE2 CE3 INPUT ENABLE REGISTER PIPELINED ENABLE OE ZZ SLEEP CONTROL Note: 3. CY7C1380F and CY7C1382F have only 1 chip enable (CE1). Document #: 38-05543 Rev. *E Page 2 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Pin Configurations NC NC NC CY7C1382D (1 Mbit x 18) 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 Document #: 38-05543 Rev. *E A NC NC VDDQ VSSQ NC DQPA DQA DQA VSSQ VDDQ DQA DQA VSS NC VDD ZZ DQA DQA VDDQ VSSQ DQA DQA NC NC VSSQ VDDQ NC NC NC A A A A A A A A A A 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 VDDQ VSSQ NC NC DQB DQB VSSQ VDDQ DQB DQB NC VDD NC VSS DQB DQB VDDQ VSSQ DQB DQB DQPB NC VSSQ VDDQ NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 MODE A A A A A1 A0 NC/72M NC/36M VSS VDD DQPB DQB DQB VDDQ VSSQ DQB DQB DQB DQB VSSQ VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSSQ DQA DQA DQA DQA VSSQ VDDQ DQA DQA DQPA 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 CY7C1380D (512K X 36) 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 MODE A A A A A1 A0 NC/72M NC/36M VSS VDD A A A A A A A A DQPC DQC DQc VDDQ VSSQ DQC DQC DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD DQPD A A CE1 CE2 NC NC BWB BWA CE3 VDD VSS CLK GW BWE OE ADSC ADSP ADV A A A A CE1 CE2 BWD BWC BWB BWA CE3 VDD VSS CLK GW BWE OE ADSC ADSP ADV A A 100-pin TQFP Pinout (3 Chip Enable) Page 3 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Pin Configurations (continued) 119-Ball BGA Pinout CY7C1380F (512K x 36) A 1 VDDQ 2 A 3 A ADSP 4 5 A 6 A 7 VDDQ B C NC/288M NC/144M A A A A ADSC VDD A A A A NC/576M NC/1G D E DQC DQC DQPC DQC VSS VSS NC CE1 VSS VSS DQPB DQB DQB DQB F VDDQ DQC VSS OE VSS DQB VDDQ G H J K DQC DQC VDDQ DQD DQC DQC VDD DQD BWC VSS NC VSS ADV BWB VSS NC VSS DQB DQB VDD DQA DQB DQB VDDQ DQA BWA VSS DQA DQA DQA VDDQ GW VDD CLK L DQD DQD M VDDQ DQD BWD VSS N DQD DQD VSS BWE A1 NC VSS DQA DQA P DQD DQPD VSS A0 VSS DQPA DQA R NC A MODE VDD NC A NC T U NC VDDQ NC/72M TMS A TDI A TCK A TDO NC/36M NC ZZ VDDQ 3 4 5 6 7 A ADSP A A VDDQ ADSC VDD A A NC/576M A A NC/1G CY7C1382F (1M x 18) 1 2 A VDDQ A B NC/288M A A C NC/144M A A D DQB NC VSS NC VSS DQPA NC E NC DQB VSS CE1 VSS NC DQA OE ADV VSS DQA VDDQ GW VDD NC VSS NC NC DQA VDD DQA NC VDDQ F VDDQ NC VSS G H J NC DQB VDDQ DQB NC VDD BWB VSS NC K NC DQB VSS CLK VSS NC DQA L M DQB VDDQ NC DQB NC VSS NC DQA NC NC VDDQ N DQB NC VSS BWE A1 BWA VSS VSS DQA NC P NC DQPB VSS A0 VSS NC DQA R T U NC NC/72M VDDQ A A TMS MODE A TDI VDD NC/36M TCK NC A TDO A A NC NC ZZ VDDQ Document #: 38-05543 Rev. *E Page 4 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Pin Configurations (continued) 165-Ball FBGA Pinout (3 Chip Enable) CY7C1380D (512K x 36) 1 A B C D E F G H J K L M N P NC/288M R 2 3 4 5 6 7 8 9 10 11 NC CE1 BWC BWB CE3 BWE ADSC ADV A NC/144M A CE2 BWD BWA CLK OE NC/576M NC DQC VDDQ VSS VDDQ VSS VDD VSS VSS VSS ADSP VDDQ A DQPC DQC GW VSS VDDQ NC/1G DQB DQPB DQB DQC DQC VDDQ VDD VSS VDDQ DQB DQB A VSS VSS VDD VSS VSS VDD DQC DQC VDDQ VDD VSS VSS VSS VDD VDDQ DQB DQB DQC NC DQD DQC NC DQD VDDQ NC VDDQ VDD VDD VDD VSS VSS VSS VSS VSS VSS VSS VSS VSS VDD VDD VDD VDDQ NC VDDQ DQB NC DQA DQB ZZ DQA DQD DQD VDDQ VDD VSS VSS VSS VDD VDDQ DQA DQA DQD DQD VDDQ VDD VSS VSS VSS VDD VDDQ DQA DQA DQD DQPD DQD NC VDDQ VDDQ VDD VSS VSS NC VSS A VSS NC VDD VSS VDDQ VDDQ DQA NC DQA DQPA NC NC/72M A A TDI A1 TDO A A A A MODE NC/36M A A TMS TCK A A A A 11 A0 CY7C1382D (1M x 18) 1 2 3 4 5 6 7 8 9 10 A B C D E F G H J K L M N P NC/288M A BWB NC CE3 ADSC OE ADV ADSP A R A NC/576M NC/144M A CE1 CE2 NC BWA CLK BWE GW NC NC NC DQB VDDQ VDDQ VSS VDD VSS VSS VSS VSS VSS VSS VSS VDD VDDQ VDDQ NC/1G NC DQPA DQA NC DQB VDDQ VDD VSS VSS VSS VDD VDDQ NC DQA NC DQB VDDQ VDD VSS VSS VSS VDD VDDQ NC DQA NC NC DQB DQB NC NC VDDQ NC VDDQ VDD VDD VDD VSS VSS VSS VSS VSS VSS VSS VSS VSS VDD VDD VDD VDDQ NC VDDQ NC NC DQA DQA ZZ NC A DQB NC VDDQ VDD VSS VSS VSS VDD VDDQ DQA NC DQB NC VDDQ VDD VSS VSS VSS VDD VDDQ DQA NC DQB DQPB NC NC VDDQ VDDQ VDD VSS VSS NC VSS A VSS NC VDD VSS VDDQ VDDQ DQA NC NC NC NC NC/72M A A TDI A1 TDO A A A A MODE NC/36M A A TMS A0 TCK A A A A Document #: 38-05543 Rev. *E Page 5 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Pin Definitions Name IO Description A0, A1, A InputAddress inputs used to select one of the address locations. Sampled at the rising edge of Synchronous the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 [2]are sampled active. A1: A0 are fed to the two-bit counter.. BWA, BWB BWC, BWD InputByte write select inputs, active LOW. Qualified with BWE to conduct byte writes to the SRAM. Synchronous Sampled on the rising edge of CLK. GW InputGlobal write enable input, active LOW. When asserted LOW on the rising edge of CLK, a Synchronous global write is conducted (all bytes are written, regardless of the values on BWX and BWE). BWE InputByte write enable input, active LOW. Sampled on the rising edge of CLK. This signal must be Synchronous asserted LOW to conduct a byte write. CLK InputClock Clock input. Used to capture all synchronous inputs to the device. Also used to increment the burst counter when ADV is asserted LOW, during a burst operation. CE1 InputChip enable 1 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with Synchronous CE and CE to select or deselect the device. ADSP is ignored if CE is HIGH. CE is sampled 2 3 1 1 only when a new external address is loaded. CE2 [2] InputChip enable 2 input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction Synchronous with CE1 and CE3 to select or deselect the device. CE2 is sampled only when a new external address is loaded. CE3 [2] InputChip enable 3 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with Synchronous CE1 and CE2 to select or deselect the device. CE3 is sampled only when a new external address is loaded. OE InputOutput enable, asynchronous input, active LOW. Controls the direction of the IO pins. When Asynchronous LOW, the IO pins behave as outputs. When deasserted HIGH, IO pins are tri-stated, and act as input data pins. OE is masked during the first clock of a read cycle when emerging from a deselected state. ADV InputAdvance input signal, sampled on the rising edge of CLK, active LOW. When asserted, it Synchronous automatically increments the address in a burst cycle. ADSP InputAddress strobe from processor, sampled on the rising edge of CLK, active LOW. When Synchronous asserted LOW, addresses presented to the device are captured in the address registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted HIGH. ADSC InputAddress strobe from controller, sampled on the rising edge of CLK, active LOW. When Synchronous asserted LOW, addresses presented to the device are captured in the address registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ZZ InputZZ sleep input. This active HIGH input places the device in a non-time critical sleep condition Asynchronous with data integrity preserved. For normal operation, this pin has to be LOW or left floating. ZZ pin has an internal pull down. DQs, DQPX IOBidirectional data IO lines. As inputs, they feed into an on-chip data register that is triggered Synchronous by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the addresses presented during the previous clock rise of the read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQPX are placed in a tri-state condition. VDD Power Supply Power supply inputs to the core of the device. Document #: 38-05543 Rev. *E Page 6 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Pin Definitions (continued) Name VSS IO Ground Description Ground for the core of the device. VSSQ IO Ground Ground for the IO circuitry. VDDQ IO Power Supply Power supply for the IO circuitry. MODE Input-Static Selects burst order. When tied to GND selects linear burst sequence. When tied to VDD or left floating selects interleaved burst sequence. This is a strap pin and must remain static during device operation. Mode pin has an internal pull up. TDO JTAG serial Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the JTAG output feature is not being utilized, this pin must be disconnected. This pin is not available on TQFP Synchronous packages. TDI JTAG serial Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is input not being utilized, this pin can be disconnected or connected to VDD. This pin is not available on Synchronous TQFP packages. TMS JTAG serial Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is input not being utilized, this pin can be disconnected or connected to VDD. This pin is not available on Synchronous TQFP packages. TCK JTAGClock NC – Clock input to the JTAG circuitry. If the JTAG feature is not being utilized, this pin must be connected to VSS. This pin is not available on TQFP packages. No Connects. 36M, 72M, 144M, 288M, 576M and 1G are address expansion pins and are not internally connected to the die. Functional Overview All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (tCO) is 2.6 ns (250 MHz device). The CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F supports secondary cache in systems utilizing a linear or interleaved burst sequence. The interleaved burst order supports Pentium® and i486™ processors. The linear burst sequence is suited for processors that utilize a linear burst sequence. The burst order is user selectable, and is determined by sampling the MODE input. Accesses can be initiated with either the processor address strobe (ADSP) or the controller address strobe (ADSC). Address advancement through the burst sequence is controlled by the ADV input. A two-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. Byte write operations are qualified with the byte write enable (BWE) and byte write select (BWX) inputs. A global write enable (GW) overrides all byte write inputs and writes data to all four bytes. All writes are simplified with on-chip synchronous self-timed write circuitry. Three synchronous chip selects (CE1, CE2, CE3) and an asynchronous output enable (OE) provide for easy bank Document #: 38-05543 Rev. *E selection and output tri-state control. ADSP is ignored if CE1 is HIGH. Single Read Accesses This access is initiated when the following conditions are satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2) CE1, CE2, CE3 are all asserted active, and (3) the write signals (GW, BWE) are all deserted HIGH. ADSP is ignored if CE1 is HIGH. The address presented to the address inputs (A) is stored into the address advancement logic and the address register while being presented to the memory array. The corresponding data is allowed to propagate to the input of the output registers. At the rising edge of the next clock the data is allowed to propagate through the output register and onto the data bus within 2.6 ns (250 MHz device) if OE is active LOW. The only exception occurs when the SRAM is emerging from a deselected state to a selected state, its outputs are always tri-stated during the first cycle of the access. After the first cycle of the access, the outputs are controlled by the OE signal. Consecutive single read cycles are supported. Once the SRAM is deselected at clock rise by the chip select and either ADSP or ADSC signals, its output will tri-state immediately. Single Write Accesses Initiated by ADSP This access is initiated when both of the following conditions are satisfied at clock rise: (1) ADSP is asserted LOW, and (2) CE1, CE2, CE3 are all asserted active. The address Page 7 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F presented to A is loaded into the address register and the address advancement logic while being delivered to the memory array. The write signals (GW, BWE, and BWX) and ADV inputs are ignored during this first cycle. automatically tri-stated whenever a write cycle is detected, regardless of the state of OE. ADSP triggered write accesses require two clock cycles to complete. If GW is asserted LOW on the second clock rise, the data presented to the DQs inputs is written into the corresponding address location in the memory array. If GW is HIGH, then the write operation is controlled by BWE and BWX signals. The CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F provides a two-bit wraparound counter, fed by A1: A0, that implements an interleaved or a linear burst sequence. The interleaved burst sequence is designed specifically to support Intel Pentium applications. The linear burst sequence is designed to support processors that follow a linear burst sequence. The burst sequence is user selectable through the MODE input. The CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F provides byte write capability that is described in the write cycle descriptions table. Asserting the byte write enable input (BWE) with the selected byte write (BWX) input, will selectively write to only the desired bytes. Bytes not selected during a byte write operation will remain unaltered. A synchronous self-timed write mechanism has been provided to simplify the write operations. The CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F is a common IO device, the output enable (OE) must be deserted HIGH before presenting data to the DQs inputs. Doing so will tri-state the output drivers. As a safety precaution, DQs are automatically tri-stated whenever a write cycle is detected, regardless of the state of OE. Single Write Accesses Initiated by ADSC ADSC write accesses are initiated when the following conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is deserted HIGH, (3) CE1, CE2, CE3 are all asserted active, and (4) the appropriate combination of the write inputs (GW, BWE, and BWX) are asserted active to conduct a write to the desired byte(s). ADSC-triggered Write accesses require a single clock cycle to complete. The address presented to A is loaded into the address register and the address advancement logic while being delivered to the memory array. The ADV input is ignored during this cycle. If a global write is conducted, the data presented to the DQs is written into the corresponding address location in the memory core. If a byte write is conducted, only the selected bytes are written. Bytes not selected during a byte write operation will remain unaltered. A synchronous self-timed write mechanism has been provided to simplify the write operations. The CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F is a common IO device, the output enable (OE) must be deserted HIGH before presenting data to the DQs inputs. Doing so will tri-state the output drivers. As a safety precaution, DQs are Burst Sequences Asserting ADV LOW at clock rise will automatically increment the burst counter to the next address in the burst sequence. Both read and write burst operations are supported. Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation sleep mode. Two clock cycles are required to enter into or exit from this sleep mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the sleep mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the sleep mode. CE1, CE2, CE3, ADSP, and ADSC must remain inactive for the duration of tZZREC after the ZZ input returns LOW. Interleaved Burst Address Table (MODE = Floating or VDD) First Address A1: A0 00 01 10 11 Second Address A1: A0 01 00 11 10 Third Address A1: A0 10 11 00 01 Fourth Address A1: A0 11 10 01 00 Linear Burst Address Table (MODE = GND) First Address A1: A0 00 01 10 11 Second Address A1: A0 01 10 11 00 Third Address A1: A0 10 11 00 01 Fourth Address A1: A0 11 00 01 10 ZZ Mode Electrical Characteristics Parameter IDDZZ tZZS tZZREC tZZI tRZZI Description Sleep mode standby current Device operation to ZZ ZZ recovery time ZZ Active to sleep current ZZ Inactive to exit sleep current Document #: 38-05543 Rev. *E Test Conditions ZZ > VDD – 0.2V ZZ > VDD – 0.2V ZZ < 0.2V This parameter is sampled This parameter is sampled Min. Max. 80 2tCYC 2tCYC 2tCYC 0 Unit mA ns ns ns ns Page 8 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Truth Table [4, 5, 6, 7, 8] Operation Add. Used CE1 CE2 CE3 Deselect Cycle, Power Down None H X X ZZ ADSP ADSC Deselect Cycle, Power Down None L L X L L X X X X L-H Tri-State Deselect Cycle, Power Down None L X H L L X X X X L-H Tri-State Deselect Cycle, Power Down None L L X L H L X X X L-H Tri-State Deselect Cycle, Power Down None L X H L H L X X X L-H Tri-State Sleep Mode, Power Down None X X X H X X X X X X Tri-State READ Cycle, Begin Burst External L H L L L X X X L L-H Q L X L ADV X WRITE OE CLK X X L-H DQ Tri-State READ Cycle, Begin Burst External L H L L L X X X H L-H Tri-State WRITE Cycle, Begin Burst External L H L L H L X L X L-H D READ Cycle, Begin Burst External L H L L H L X H L L-H Q READ Cycle, Begin Burst External L H L L H L X H H L-H Tri-State READ Cycle, Continue Burst Next X X X L H H L H L L-H Q READ Cycle, Continue Burst Next X X X L H H L H H L-H Tri-State READ Cycle, Continue Burst Next H X X L X H L H L L-H Q READ Cycle, Continue Burst Next H X X L X H L H H L-H Tri-State WRITE Cycle, Continue Burst Next X X X L H H L L X L-H D WRITE Cycle, Continue Burst Next H X X L X H L L X L-H D READ Cycle, Suspend Burst Current X X X L H H H H L L-H Q READ Cycle, Suspend Burst Current X X X L H H H H H L-H Tri-State READ Cycle, Suspend Burst Current H X X L X H H H L L-H Q READ Cycle, Suspend Burst Current H X X L X H H H H L-H Tri-State WRITE Cycle, Suspend Burst Current X X X L H H H L X L-H D WRITE Cycle, Suspend Burst Current H X X L X H H L X L-H D Notes: 4. X = Don't Care, H = Logic HIGH, L = Logic LOW. 5. WRITE = L when any one or more byte write enable signals, and BWE = L or GW = L. WRITE = H when all byte write enable signals, BWE, GW = H. 6. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock. 7. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a don't care for the remainder of the write cycle. 8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW). Document #: 38-05543 Rev. *E Page 9 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Truth Table for Read/Write [4, 9] Function (CY7C1380D/CY7C1380F) GW BWE BWD BWC BWB BWA Read H H X X X X Read H L H H H H Write Byte A – (DQA and DQPA) H L H H H L Write Byte B – (DQB and DQPB) H L H H L H Write Bytes B, A H L H H L L Write Byte C – (DQC and DQPC) H L H L H H Write Bytes C, A H L H L H L Write Bytes C, B H L H L L H Write Bytes C, B, A H L H L L L Write Byte D – (DQD and DQPD) H L L H H H Write Bytes D, A H L L H H L Write Bytes D, B H L L H L H Write Bytes D, B, A H L L H L L Write Bytes D, C H L L L H H Write Bytes D, C, A H L L L H L Write Bytes D, C, B H L L L L H Write All Bytes H L L L L L Write All Bytes L X X X X X Truth Table for Read/Write [4, 9] GW BWE BWB BWA Read Function (CY7C1382D/CY7C1382F) H H X X Read H L H H Write Byte A – (DQA and DQPA) H L H L Write Byte B – (DQB and DQPB) H L L H Write Bytes B, A H L L L Write All Bytes H L L L Write All Bytes L X X X Note: 9. Table only lists a partial listing of the byte write combinations. Any combination of BWX is valid. Appropriate write will be done based on which byte write is active. Document #: 38-05543 Rev. *E Page 10 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F IEEE 1149.1 Serial Boundary Scan (JTAG) Test Data-In (TDI) The CY7C1380D/CY7C1382D contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register. The TDI ball is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) of any register. (See TAP Controller Block Diagram.) Disabling the JTAG Feature Test Data-Out (TDO) It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately be connected to VDD through a pull up resistor. TDO must be left unconnected. Upon power up, the device will come up in a reset state which will not interfere with the operation of the device. The TDO output ball is used to serially clock data-out from the registers. The output is active depending upon the current state of the TAP state machine. The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. (See TAP Controller State Diagram.) The CY7C1380D/CY7C1382D incorporates a serial boundary scan test access port (TAP).This part is fully compliant with 1149.1. The TAP operates using JEDEC-standard 3.3V or 2.5V IO logic levels. TAP Controller Block Diagram TAP Controller State Diagram 0 Bypass Register 1 TEST-LOGIC RESET 2 1 0 0 0 RUN-TEST/ IDLE 1 SELECT DR-SCAN 1 SELECT IR-SCAN 0 1 0 S election TDO Circuitr y Identification Register CAPTURE-IR x . . . . . 2 1 0 Boundary Scan Register SHIFT-IR 1 Instruction Register 31 30 29 . . . 2 1 0 0 SHIFT-DR 0 1 EXIT1-DR 1 EXIT1-IR 0 1 0 PAUSE-IR 1 TCK TMS 0 PAUSE-DR TAP CONTROLLER 0 1 EXIT2-DR 0 EXIT2-IR 1 1 UPDATE-DR 1 TDI 0 1 CAPTURE-DR 0 0 1 Selection Circuitry 0 UPDATE-IR 1 0 The 0 or 1 next to each state represents the value of TMS at the rising edge of TCK. Test Access Port (TAP) Test Clock (TCK) The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test MODE SELECT (TMS) The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. This pin may be left unconnected if the TAP is not used. The ball is pulled up internally, resulting in a logic HIGH level. Document #: 38-05543 Rev. *E Performing a TAP Reset A Reset is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This Reset does not affect the operation of the SRAM and may be performed while the SRAM is operating. At power up, the TAP is reset internally to ensure that TDO comes up in a High-Z state. TAP Registers Registers are connected between the TDI and TDO balls and allow data to be scanned in and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction register. Data is serially loaded into the TDI ball on the rising edge of TCK. Data is output on the TDO ball on the falling edge of TCK. Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO balls as shown in the TAP Controller Block Diagram. Upon power up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section. Page 11 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary ‘01’ pattern to allow for fault isolation of the board-level serial test data path. instruction register between the TDI and TDO balls and allows the IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state. Bypass Register The IDCODE instruction is loaded into the instruction register upon power up or whenever the TAP controller is given a test logic reset state. To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between the TDI and TDO balls. This allows data to be shifted through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all the input and bidirectional balls on the SRAM. The boundary scan register is loaded with the contents of the RAM input and output ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO balls when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can be used to capture the contents of the input and output ring. The boundary scan order tables show the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Identification (ID) Register The ID register is loaded with a vendor-specific 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in the Identification Register Definitions on page 15. TAP Instruction Set Overview Eight different instructions are possible with the three bit instruction register. All combinations are listed in Identification Codes on page 15. Three of these instructions are listed as RESERVED and must not be used. The other five instructions are described in detail below. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO balls. To execute the instruction once it is shifted in, the TAP controller needs to be moved into the Update-IR state. EXTEST The EXTEST instruction enables the preloaded data to be driven out through the system output pins. This instruction also selects the boundary scan register to be connected for serial access between the TDI and TDO in the Shift-DR controller state. IDCODE The IDCODE instruction causes a vendor-specific 32-bit code to be loaded into the instruction register. It also places the Document #: 38-05543 Rev. *E SAMPLE Z The SAMPLE Z instruction causes the boundary scan register to be connected between the TDI and TDO balls when the TAP controller is in a Shift-DR state. The SAMPLE Z command places all SRAM outputs into a High-Z state. SAMPLE/PRELOAD SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When the SAMPLE/PRELOAD instructions are loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the input and output pins is captured in the boundary scan register. The user must be aware that the TAP controller clock can only operate at a frequency up to 20 MHz, while the SRAM clock operates more than an order of magnitude faster. As there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output will undergo a transition. The TAP may then try to capture a signal while in transition (metastable state). This will not harm the device, but there is no guarantee as to the value that will be captured. Repeatable results may not be possible. To guarantee that the boundary scan register will capture the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller's capture setup plus hold times (tCS and tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK# captured in the boundary scan register. Once the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. PRELOAD allows an initial data pattern to be placed at the latched parallel outputs of the boundary scan register cells prior to the selection of another boundary scan test operation. The shifting of data for the SAMPLE and PRELOAD phases can occur concurrently when required; that is, while data captured is shifted out, the preloaded data is shifted in. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO balls. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. EXTEST Output Bus Tri-State IEEE Standard 1149.1 mandates that the TAP controller be able to put the output bus into a tri-state mode. The boundary scan register has a special bit located at bit #85 (for 119-BGA package) or bit #89 (for 165-fBGA package). Page 12 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F When this scan cell, called the “extest output bus tri-state,” is latched into the preload register during the Update-DR state in the TAP controller, it will directly control the state of the output (Q-bus) pins, when the EXTEST is entered as the current instruction. When HIGH, it will enable the output buffers to drive the output bus. When LOW, this bit will place the output bus into a High-Z condition. This bit can be set by entering the SAMPLE/PRELOAD or EXTEST command, and then shifting the desired bit into that cell, during the Shift-DR state. During Update-DR, the value loaded into that shift-register cell will latch into the preload register. When the EXTEST instruction is entered, this bit will directly control the output Q-bus pins. Note that this bit is preset HIGH to enable the output when the device is powered up, and also when the TAP controller is in the Test-Logic-Reset state. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. TAP Timing Test Clock (TCK) t t TH t TMSS t TMSH t TDIS t TDIH TL t CYC Test Mode Select (TMS) Test Data-In (TDI) t TDOV t TDOX Test Data-Out (TDO) DON’T CARE UNDEFINED TAP AC Switching Characteristics Over the Operating Range [10, 11] Parameter Description Min. Max. Unit 20 MHz Clock tTCYC TCK Clock Cycle Time tTF TCK Clock Frequency tTH TCK Clock HIGH time 20 ns tTL TCK Clock LOW time 20 ns 50 ns Output Times tTDOV TCK Clock LOW to TDO Valid tTDOX TCK Clock LOW to TDO Invalid 10 0 ns ns Setup Times tTMSS TMS Setup to TCK Clock Rise 5 ns tTDIS TDI Setup to TCK Clock Rise 5 ns tCS Capture Setup to TCK Rise 5 ns tTMSH TMS Hold after TCK Clock Rise 5 ns tTDIH TDI Hold after Clock Rise 5 ns tCH Capture Hold after Clock Rise 5 ns Hold Times Notes: 10. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. 11. Test conditions are specified using the load in TAP AC test conditions. tR/tF = 1ns. Document #: 38-05543 Rev. *E Page 13 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F 2.5V TAP AC Test Conditions 3.3V TAP AC Test Conditions Input pulse levels .................................................VSS to 3.3V Input pulse levels................................................. VSS to 2.5V Input rise and fall times ..................... ..............................1 ns Input rise and fall time .....................................................1 ns Input timing reference levels ...........................................1.5V Input timing reference levels .................. ......................1.25V Output reference levels...................................................1.5V Output reference levels .................. ..............................1.25V Test load termination supply voltage...............................1.5V Test load termination supply voltage .................... ........1.25V 3.3V TAP AC Output Load Equivalent 2.5V TAP AC Output Load Equivalent 1.5V 1.25V 50Ω 50Ω TDO TDO Z O= 50 Ω Z O= 50 Ω 20pF 20pF TAP DC Electrical Characteristics And Operating Conditions (0°C < TA < +70°C; VDD = 3.3V ±0.165V unless otherwise noted) [12] Parameter VOH1 VOH2 VOL1 VOL2 VIH VIL IX Description Output HIGH Voltage Output HIGH Voltage Output LOW Voltage Output LOW Voltage Test Conditions Max. Unit IOH = –4.0 mA, VDDQ = 3.3V 2.4 V IOH = –1.0 mA, VDDQ = 2.5V 2.0 V IOH = –100 µA VDDQ = 3.3V 2.9 V VDDQ = 2.5V 2.1 V IOL = 8.0 mA IOL = 100 µA Input HIGH Voltage Input LOW Voltage Input Load Current Min. GND < VIN < VDDQ VDDQ = 3.3V 0.4 V VDDQ = 2.5V 0.4 V VDDQ = 3.3V 0.2 V VDDQ = 2.5V 0.2 V VDDQ = 3.3V 2.0 VDD + 0.3 V VDDQ = 2.5V 1.7 VDD + 0.3 V VDDQ = 3.3V –0.3 0.8 V VDDQ = 2.5V –0.3 0.7 V –5 5 µA Note: 12. All voltages referenced to VSS (GND). Document #: 38-05543 Rev. *E Page 14 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Identification Register Definitions CY7C1380D/CY7C1380F CY7C1382D/CY7C1382F (512K x 36) (1 Mbit x 18) Instruction Field Description Revision Number (31:29) 000 000 Device Depth (28:24) [13] 01011 01011 Device Width (23:18) 119-BGA 101000 101000 Defines the memory type and architecture. Device Width (23:18) 165-FBGA 000000 000000 Defines the memory type and architecture. Cypress Device ID (17:12) Cypress JEDEC ID Code (11:1) Describes the version number. Reserved for internal use. 100101 010101 Defines the width and density. 00000110100 00000110100 Allows unique identification of SRAM vendor. 1 1 ID Register Presence Indicator (0) Indicates the presence of an ID register. Scan Register Sizes Register Name Bit Size (x36) Bit Size (x18) Instruction 3 3 Bypass 1 1 ID 32 32 Boundary Scan Order (119-ball BGA package) 85 85 Boundary Scan Order (165-ball FBGA package) 89 89 Identification Codes Instruction Code Description EXTEST 000 Captures IO ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM outputs to High-Z state. IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operations. SAMPLE Z 010 Captures IO ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High-Z state. RESERVED 011 Do Not Use. This instruction is reserved for future use. SAMPLE/PRELOAD 100 Captures IO ring contents. Places the boundary scan register between TDI and TDO. Does not affect SRAM operation. RESERVED 101 Do Not Use. This instruction is reserved for future use. RESERVED 110 Do Not Use. This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. Note: 13. Bit #24 is 1 in the register definitions for both 2.5v and 3.3v versions of this device. Document #: 38-05543 Rev. *E Page 15 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F 119-Ball BGA Boundary Scan Order [14, 15] Bit # Ball ID Bit # 1 H4 T4 23 2 24 3 T5 25 4 T6 26 5 R5 27 6 L5 28 Ball ID Bit # Ball ID Bit # Ball ID F6 45 G4 67 L1 E7 46 A4 68 M2 D7 47 G3 69 N1 H7 48 C3 70 P1 G6 49 B2 71 K1 E6 50 B3 72 L2 7 R6 29 D6 51 A3 73 8 U6 30 C7 52 C2 74 N2 P2 9 R7 31 B7 53 A2 75 R3 10 T7 32 C6 54 B1 76 T1 11 P6 33 A6 55 C1 77 R1 12 N7 34 C5 56 D2 78 T2 13 M6 35 B5 57 E1 79 L3 14 L7 36 G5 58 F2 80 R2 15 K6 37 B6 59 G1 81 T3 16 P7 38 D4 60 H2 82 L4 17 N6 39 B4 61 D1 83 N4 18 L6 40 F4 62 E2 84 P4 19 K7 41 M4 63 G2 85 Internal 20 J5 42 A5 64 H1 21 H6 43 K4 65 J3 22 G7 44 E4 66 2K Notes: 14. Balls which are NC (No Connect) are pre-set LOW. 15. Bit# 85 is pre-set HIGH. Document #: 38-05543 Rev. *E Page 16 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F 165-Ball BGA Boundary Scan Order [14, 16] Bit # Ball ID Bit # Ball ID Bit # Ball ID 1 N6 31 D10 61 G1 2 N7 32 C11 62 D2 3 N10 33 A11 63 E2 4 P11 34 B11 64 F2 5 P8 35 A10 65 G2 6 R8 36 B10 66 H1 7 R9 37 A9 67 H3 8 P9 38 B9 68 J1 9 P10 39 C10 69 K1 10 R10 40 A8 70 L1 11 R11 41 B8 71 M1 12 H11 42 A7 72 J2 13 N11 43 B7 73 K2 14 M11 44 B6 74 L2 15 L11 45 A6 75 M2 16 K11 46 B5 76 N1 17 J11 47 A5 77 N2 18 M10 48 A4 78 P1 19 L10 49 B4 79 R1 20 K10 50 B3 80 R2 21 J10 51 A3 81 P3 22 H9 52 A2 82 R3 23 H10 53 B2 83 P2 24 G11 54 C2 84 R4 25 F11 55 B1 85 P4 26 E11 56 A1 86 N5 27 D11 57 C1 87 P6 28 G10 58 D1 88 R6 89 Internal 29 F10 59 E1 30 E10 60 F1 Note: 16. Bit# 89 is pre-set HIGH. Document #: 38-05543 Rev. *E Page 17 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Maximum Ratings DC Input Voltage ................................... –0.5V to VDD + 0.5V Current into Outputs (LOW) ........................................ 20 mA Exceeding the maximum ratings may impair the useful life of the device. For user guidelines, not tested. Static Discharge Voltage........................................... >2001V (per MIL-STD-883, Method 3015) Storage Temperature ................................. –65°C to +150°C Latch-up Current .................................................... >200 mA Ambient Temperature with Power Applied............................................. –55°C to +125°C Operating Range Supply Voltage on VDD Relative to GND ....... –0.3V to +4.6V Ambient Range Temperature VDD VDDQ Commercial 0°C to +70°C 3.3V –5%/+10% 2.5V – 5% to VDD Industrial –40°C to +85°C Supply Voltage on VDDQ Relative to GND ...... –0.3V to +VDD DC Voltage Applied to Outputs in Tri-State........................................... –0.5V to VDDQ + 0.5V Electrical Characteristics Over the Operating Range Parameter Description Test Conditions VDD Power Supply Voltage VDDQ IO Supply Voltage VOH VOL VIH VIL IX Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage [17, 18] [17] [17] Min. Max. Unit 3.135 3.6 V for 3.3V IO 3.135 VDD V for 2.5V IO 2.375 2.625 V for 3.3V IO, IOH = –4.0 mA 2.4 V for 2.5V IO, IOH = –1.0 mA 2.0 V for 3.3V IO, IOL = 8.0 mA 0.4 V for 2.5V IO, IOL = 1.0 mA 0.4 V for 3.3V IO 2.0 VDD + 0.3V V for 2.5V IO 1.7 VDD + 0.3V V for 3.3V IO –0.3 0.8 V for 2.5V IO –0.3 0.7 V 5 µA 5 µA Input Leakage Current except ZZ and MODE GND ≤ VI ≤ VDDQ –5 Input Current of MODE Input = VSS –30 Input = VDD Input Current of ZZ Input = VSS Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled IDD VDD Operating Supply Current VDD = Max., IOUT = 0 mA, f = fMAX = 1/tCYC µA –5 30 Input = VDD IOZ µA µA 5 µA 4.0-ns cycle, 250 MHz 350 mA 5.0-ns cycle, 200 MHz 300 mA 6.0-ns cycle, 167 MHz 275 mA 4.0-ns cycle, 250 MHz 160 mA 5.0-ns cycle, 200 MHz 150 mA 6.0-ns cycle, 167 MHz –5 Automatic CE Power Down Current—TTL Inputs VDD = Max, Device Deselected, VIN ≥ VIH or VIN ≤ VIL f = fMAX = 1/tCYC 140 mA ISB2 Automatic CE Power Down Current-CMOS Inputs VDD = Max, Device Deselected, All speeds VIN ≤ 0.3V or VIN > VDDQ – 0.3V, f = 0 70 mA ISB3 Automatic CE Power Down Current—CMOS Inputs VDD = Max, Device Deselected, or VIN ≤ 0.3V or VIN > VDDQ – 0.3V f = fMAX = 1/tCYC 4.0-ns cycle, 250 MHz 135 mA 5.0-ns cycle, 200 MHz 130 mA 6.0-ns cycle, 167 MHz 125 mA Automatic CE Power Down Current—TTL Inputs VDD = Max, Device Deselected, VIN ≥ VIH or VIN ≤ VIL, f = 0 All speeds 80 mA ISB1 ISB4 Notes: 17. Overshoot: VIH(AC) < VDD +1.5V (pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (pulse width less than tCYC/2). 18. TPower up: Assumes a linear ramp from 0v to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD. Document #: 38-05543 Rev. *E Page 18 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Capacitance [19] Parameter Description CIN Input Capacitance CCLK Clock Input Capacitance CIO Input/Output Capacitance 100 TQFP Package Test Conditions TA = 25°C, f = 1 MHz, VDD = 3.3V. VDDQ = 2.5V 119 BGA Package 165 FBGA Package Unit 5 8 9 pF 5 8 9 pF 5 8 9 pF 100 TQFP Package 119 BGA Package 165 FBGA Package Unit 28.66 23.8 20.7 °C/W 4.08 6.2 4.0 °C/W Thermal Resistance [19] Parameter Description ΘJA Thermal Resistance (Junction to Ambient) ΘJC Thermal Resistance (Junction to Case) Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, in accordance with EIA/JESD51. AC Test Loads and Waveforms 3.3V IO Test Load R = 317Ω 3.3V OUTPUT OUTPUT RL = 50Ω Z0 = 50Ω GND 5 pF R = 351Ω VT = 1.5V INCLUDING JIG AND SCOPE (a) 2.5V IO Test Load OUTPUT RL = 50Ω Z0 = 50Ω VT = 1.25V (a) 10% (c) ALL INPUT PULSES VDDQ INCLUDING JIG AND SCOPE ≤ 1 ns (b) GND 5 pF 90% 10% 90% ≤ 1 ns R = 1667Ω 2.5V OUTPUT ALL INPUT PULSES VDDQ R = 1538Ω (b) 10% 90% 10% 90% ≤ 1 ns ≤ 1 ns (c) Note: 19. Tested initially and after any design or process change that may affect these parameters. Document #: 38-05543 Rev. *E Page 19 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Switching Characteristics Over the Operating Range [20, 21] 250 MHz Parameter tPOWER Description VDD(Typical) to the first Access Min. [22] Max. 200 MHz Min. Max. 167 MHz Min. Max. Unit 1 1 1 ms Clock tCYC Clock Cycle Time 4.0 5 6 ns tCH Clock HIGH 1.7 2.0 2.2 ns tCL Clock LOW 1.7 2.0 2.2 ns Output Times tCO Data Output Valid After CLK Rise tDOH Data Output Hold After CLK Rise Clock to Low-Z [23, 24, 25] tCHZ Clock to High-Z [23, 24, 25] tOEV OE LOW to Output Valid tCLZ tOELZ tOEHZ OE LOW to Output Low-Z [23, 24, 25] OE HIGH to Output High-Z 2.6 3.0 3.4 ns 1.0 1.3 1.3 ns 1.0 1.3 1.3 ns 2.6 3.0 3.4 ns 2.6 3.0 3.4 ns 0 [23, 24, 25] 0 2.6 0 3.0 ns 3.4 ns Setup Times tAS Address Setup Before CLK Rise 1.2 1.4 1.5 ns tADS ADSC, ADSP Setup Before CLK Rise 1.2 1.4 1.5 ns tADVS ADV Setup Before CLK Rise 1.2 1.4 1.5 ns tWES GW, BWE, BWX Setup Before CLK Rise 1.2 1.4 1.5 ns tDS Data Input Setup Before CLK Rise 1.2 1.4 1.5 ns tCES Chip Enable SetUp Before CLK Rise 1.2 1.4 1.5 ns tAH Address Hold After CLK Rise 0.3 0.4 0.5 ns tADH ADSP, ADSC Hold After CLK Rise 0.3 0.4 0.5 ns tADVH ADV Hold After CLK Rise 0.3 0.4 0.5 ns tWEH GW, BWE, BWX Hold After CLK Rise 0.3 0.4 0.5 ns tDH Data Input Hold After CLK Rise 0.3 0.4 0.5 ns tCEH Chip Enable Hold After CLK Rise 0.3 0.4 0.5 ns Hold Times Notes: 20. Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V. 21. Test conditions shown in (a) of AC Test Loads unless otherwise noted. 22. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a read or write operation can be initiated. 23. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads and Waveforms on page 19. Transition is measured ± 200 mV from steady-state voltage. 24. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions. 25. This parameter is sampled and not 100% tested. Document #: 38-05543 Rev. *E Page 20 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Switching Waveforms Read Cycle Timing [26] t CYC CLK t t ADS CH t CL t ADH ADSP t ADS tADH ADSC t AS tAH A1 ADDRESS A2 t WES A3 Burst continued with new base address tWEH GW, BWE, BWx t CES Deselect cycle tCEH CE t ADVS tADVH ADV ADV suspends burst. OE t OEHZ t CLZ Data Out (Q) Q(A1) High-Z t OEV t CO t OELZ t DOH Q(A2) t CHZ Q(A2 + 1) Q(A2 + 2) Q(A2 + 3) Q(A2) Q(A2 + 1) t CO Burst wraps around to its initial state Single READ BURST READ DON’T CARE UNDEFINED Note: 26. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH. Document #: 38-05543 Rev. *E Page 21 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Switching Waveforms (continued) Write Cycle Timing [26, 27] t CYC CLK tCH t ADS tCL tADH ADSP t ADS ADSC extends burst tADH t ADS tADH ADSC t AS tAH A1 ADDRESS A2 A3 Byte write signals are ignored for first cycle when ADSP initiates burst t WES tWEH BWE, BW X t WES tWEH GW t CES tCEH CE t t ADVS ADVH ADV ADV suspends burst OE t DS Data In (D) High-Z t OEHZ tDH D(A1) D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) D(A2 + 3) D(A3) D(A3 + 1) D(A3 + 2) ata Out (Q) BURST READ Single WRITE BURST WRITE DON’T CARE Extended BURST WRITE UNDEFINED Note: 27. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BWX LOW. Document #: 38-05543 Rev. *E Page 22 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Switching Waveforms (continued) Read/Write Cycle Timing [26, 28, 29] tCYC CLK tCL tCH t ADS tADH t AS tAH ADSP ADSC ADDRESS A1 A2 A3 A4 A5 A6 t WES tWEH BWE, BW X t CES tCEH CE ADV OE t DS tCO tDH t OELZ Data In (D) High-Z tCLZ Data Out (Q) High-Z Q(A1) Back-to-Back READs tOEHZ D(A3) D(A5) Q(A2) Q(A4) Single WRITE Q(A4+1) Q(A4+2) BURST READ DON’T CARE D(A6) Q(A4+3) Back-to-Back WRITEs UNDEFINED Notes: 28. The data bus (Q) remains in high-Z following a WRITE cycle, unless a new read access is initiated by ADSP or ADSC. 29. GW is HIGH. Document #: 38-05543 Rev. *E Page 23 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Switching Waveforms (continued) ZZ Mode Timing [30, 31] CLK t ZZ I t t ZZ ZZREC ZZI SUPPLY I t RZZI DDZZ ALL INPUTS DESELECT or READ Only (except ZZ) Outputs (Q) High-Z DON’T CARE Notes: 30. Device must be deselected when entering ZZ mode. See Truth Table [4, 5, 6, 7, 8] on page 9 for all possible signal conditions to deselect the device. 31. DQs are in high-Z when exiting ZZ sleep mode. Document #: 38-05543 Rev. *E Page 24 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Ordering Information Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) 167 Ordering Code CY7C1380D-167AXC Package Diagram Part and Package Type 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free Operating Range Commercial CY7C1382D-167AXC CY7C1380F-167BGC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) CY7C1382F-167BGC CY7C1380F-167BGXC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Pb-Free CY7C1382F-167BGXC CY7C1380D-167BZC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) CY7C1382D-167BZC CY7C1380D-167BZXC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free CY7C1382D-167BZXC CY7C1380D-167AXI 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free Industrial CY7C1382D-167AXI CY7C1380F-167BGI 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) CY7C1382F-167BGI CY7C1380F-167BGXI 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Pb-Free CY7C1382F-167BGXI CY7C1380D-167BZI 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) CY7C1382D-167BZI CY7C1380D-167BZXI 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free CY7C1382D-167BZXI 200 CY7C1380D-200AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free Commercial CY7C1382D-200AXC CY7C1380F-200BGC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) CY7C1382F-200BGC CY7C1380F-200BGXC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Pb-Free CY7C1382F-200BGXC CY7C1380D-200BZC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) CY7C1382D-200BZC CY7C1380D-200BZXC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free CY7C1382D-200BZXC CY7C1380D-200AXI 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free Industrial CY7C1382D-200AXI CY7C1380F-200BGI 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) CY7C1382F-200BGI CY7C1380F-200BGXI 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Pb-Free CY7C1382F-200BGXI CY7C1380D-200BZI 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) CY7C1382D-200BZI CY7C1380D-200BZXI 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free CY7C1382D-200BZXI Document #: 38-05543 Rev. *E Page 25 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Ordering Information (continued) Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. 250 CY7C1380D-250AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free Commercial CY7C1382D-250AXC CY7C1380F-250BGC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) CY7C1382F-250BGC CY7C1380F-250BGXC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Pb-Free CY7C1382F-250BGXC CY7C1380D-250BZC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) CY7C1382D-250BZC CY7C1380D-250BZXC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free CY7C1382D-250BZXC CY7C1380D-250AXI 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free Industrial CY7C1382D-250AXI CY7C1380F-250BGI 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) CY7C1382F-250BGI CY7C1380F-250BGXI 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Pb-Free CY7C1382F-250BGXI CY7C1380D-250BZI 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) CY7C1382D-250BZI CY7C1380D-250BZXI 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free CY7C1382D-250BZXI Document #: 38-05543 Rev. *E Page 26 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Package Diagrams Figure 1. 100-Pin Thin Plastic Quad Flat pack (14 x 20 x 1.4 mm) (51-85050) 16.00±0.20 1.40±0.05 14.00±0.10 100 81 80 1 20.00±0.10 22.00±0.20 0.30±0.08 0.65 TYP. 30 12°±1° (8X) SEE DETAIL A 51 31 50 0.20 MAX. 0.10 1.60 MAX. R 0.08 MIN. 0.20 MAX. 0° MIN. SEATING PLANE STAND-OFF 0.05 MIN. 0.15 MAX. 0.25 NOTE: 1. JEDEC STD REF MS-026 GAUGE PLANE 0°-7° R 0.08 MIN. 0.20 MAX. 2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS 0.60±0.15 0.20 MIN. 51-85050-*B 1.00 REF. DETAIL Document #: 38-05543 Rev. *E A Page 27 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Package Diagrams (continued) Figure 2. 119-ball BGA (14 x 22 x 2.4 mm) (51-85115) 51-85115-*B Document #: 38-05543 Rev. *E Page 28 of 30 CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Package Diagrams (continued) Figure 3. 165-ball FBGA (13 x 15 x 1.4 mm) (51-85180) 165 FBGA 13 x 15 x 1.40 MM BB165D/BW165D BOTTOM VIEW PIN 1 CORNER BOTTOM VIEW TOP VIEW PIN 1 CORNER TOP VIEW Ø0.05 M C Ø0.25 MØ0.05 CAB MC PIN 1 CORNER Ø0.25 M C A B Ø0.50 -0.06 (165X) PIN 1 CORNER 1 2 1 +0.14 4 2 5 3 6 4 7 5 8 6 9 7 10 11 8 9 11 10 11 10 9 11 8 10 7 9 6 8 5 7 Ø0.50 -0.06 (165X) 4 6 3 +0.14 2 5 4 1 3 2 1A B A C B C B D C D C E D F 1.00 A 1.00 B F E G F G F H G H G J H K J L K M L N M P N P N R P R P 7.00 7.00 14.00 D E 14.00 15.00±0.10 E 15.00±0.10 15.00±0.10 A 15.00±0.10 3 J H K J L K M L N M R R A A A 1.00 5.00 A 1.00 5.00 10.00 10.00 B B 13.00±0.10 B 13.00±0.10 B 13.00±0.10 13.00±0.10 SEATING PLANE NOTES : NOTES : SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD) PACKAGE WEIGHT SOLDER PAD: 0.475g TYPE : NON-SOLDER MASK DEFINED (NSMD) JEDEC REFERENCE : MO-216 / DESIGN 4.6C PACKAGE WEIGHT : 0.475g PACKAGE CODE : BB0AC : MO-216 / DESIGN 4.6C JEDEC REFERENCE PACKAGE CODE : BB0AC 51-85180-*A 0.35±0.06 C 0.35±0.06 0.36 0.36 SEATING PLANE C 0.15 C 1.40 MAX. 1.40 MAX. 0.15(4X) 0.15 C 0.53±0.05 0.53±0.05 0.25 C 0.25 C 0.15(4X) 51-85180-*A Intel and Pentium are registered trademarks, and i486 is a trademark of Intel Corporation. All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-05543 Rev. *E Page 29 of 30 © Cypress Semiconductor Corporation, 2006-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F Document History Page Document Title: CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F, 18-Mbit (512K x 36/1M x 18) Pipelined SRAM Document Number: 38-05543 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 254515 See ECN RKF New data sheet *A 288531 See ECN SYT Edited description under “IEEE 1149.1 Serial Boundary Scan (JTAG)” for non-compliance with 1149.1 Removed 225MHz and 133 MHz Speed Bins Added Pb-free information for 100-Pin TQFP, 119 BGA and 165 FBGA Packages Added comment of ‘Pb-free BG packages availability’ below the Ordering Information *B 326078 See ECN PCI Address expansion pins/balls in the pinouts for all packages are modified as per JEDEC standard Added description on EXTEST Output Bus Tri-State Changed description on the Tap Instruction Set Overview and Extest Changed Device Width (23:18) for 119-BGA from 000000 to 101000 Added separate row for 165 -FBGA Device Width (23:18) Changed ΘJA and ΘJC for TQFP Package from 31 and 6 °C/W to 28.66 and 4.08 °C/W respectively Changed ΘJA and ΘJC for BGA Package from 45 and 7 °C/W to 23.8 and 6.2 °C/W respectively Changed ΘJA and ΘJC for FBGA Package from 46 and 3 °C/W to 20.7 and 4.0 °C/W respectively Modified VOL, VOH test conditions Removed comment of ‘Pb-free BG packages availability’ below the Ordering Information Updated Ordering Information Table *C 416321 See ECN NXR Converted from Preliminary to Final Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North First Street” to “198 Champion Court” Changed the description of IX from Input Load Current to Input Leakage Current on page# 18 Changed the IX current values of MODE on page # 18 from –5 µA and 30 µA to –30 µA and 5 µA Changed the IX current values of ZZ on page # 18 from –30 µA and 5 µA to –5 µA and 30 µA Changed VIH < VDD to VIH < VDDon page # 18 Replaced Package Name column with Package Diagram in the Ordering Information table Updated Ordering Information Table *D 475009 See ECN VKN Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND Changed tTH, tTL from 25 ns to 20 ns and tTDOV from 5 ns to 10 ns in TAP AC Switching Characteristics table. Updated the Ordering Information table. *E 776456 See ECN VKN Added Part numbers CY7C1380F and CY7C1382F and its related information Added footnote# 3 regarding Chip Enable Updated Ordering Information table Document #: 38-05543 Rev. *E Page 30 of 30