Thinki FES16JT 16.0 ampere glass passivated super fast recovery rectifier diode Datasheet

®
FES16AT thru FES16JT
Pb
FES16AT thru FES16JT
Pb Free Plating Product
16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diode
Features
Glass passivated chip junction
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
TO-220AC
Unit : inch (mm)
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
.139(3.55)
MIN
.054(1.39)
Application
.177(4.5)MAX
Mechanical Data
Case: Heatsink TO-220AC
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.1 gram approxiamtely
.50(12.7)MIN
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.038(0.96)
.019(0.50)
.624(15.87)
.548(13.93)
.269(6.85)
.226(5.75)
.045(1.15)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Positive
Negative
Suffix "T"
Suffix "TR"
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
FES
FES
FES
FES
FES
16AT 16BT 16CT 16DT 16FT
FES
FES
16GT 16HT
FES
16JT
Unit
V
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
150
200
300
400
500
600
Maximum RMS Voltage
VRMS
35
70
105
140
210
280
350
420
V
Maximum DC Blocking Voltage
VDC
50
100
150
200
300
400
500
600
V
Maximum Average Forward Rectified Current
IF(AV)
16
A
Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method)
IFSM
200
A
Maximum Instantaneous Forward Voltage (Note 1)
@ 16 A
Maximum Reverse Current @ Rated VR
T A=25 ℃
T A=100 ℃
VF
Trr
Typical Junction Capacitance (Note 3)
Cj
Operating Temperature Range
Storage Temperature Range
RθjC
1.3
1.7
10
IR
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance
0.975
uA
400
35
130
nS
100
1
V
pF
TJ
- 65 to + 150
℃/W
℃
TSTG
- 65 to + 150
℃
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I F=0.5A, I R=1.0A, I RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
®
FES16AT thru FES16JT
RATINGS AND CHARACTERISTIC CURVES (FES16AT thru FES16JT)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
FIG.1 FORWARD CURRENT DERATING CURVE
1000
16
12
8
4
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
CASE TEMPERATURE (oC)
100
TA=100℃
10
TA=75℃
1
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
250
PEAK FORWARD SURGE A
CURRENT (A)
INSTANTANEOUS REVERSE CURRENT(uA)
AVERAGE FORWARD A
CURRENT (A)
20
TA=25℃
8.3mS Single Half Sine Wave
JEDEC Method
200
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
150
100
50
0
1
10
NUMBER OF CYCLES AT 60 Hz
FIG. 5 TYPICAL FORWARD CHARACTERISRICS
100
100
INSTANTANEOUS FORWARD CURRENT (A)
FES16AT-FES16DT
FIG. 4 TYPICAL JUNCTION CAPACITANCE
300
TA=25℃
CAPACITANCE (pF)
250
200
FES16AT-FES16DT
150
100
FES16FT-FES16JT
10
1
FES16FT-FES16GT
FES16HT-FES16JT
0.1
TA=25℃
Pulse Width=300us
1% Duty Cycle
50
0
0.01
1
10
100
REVERSE VOLTAGE (V)
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
1000
0.4
0.6
0.8
1
1.2
1.4
FORWARD VOLTAGE (V)
1.6
1.8
Page 2/2
http://www.thinkisemi.com/
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