Diode Semiconductor Korea B520C-B560C REVERSE VOLTAGE: 20 --- 60 V CURRENT: 5.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES ◇ Plastic package has Underwriters Laborator 111 Flammability Classification 94V-0 DO - 214AB(SMC) ◇ For surface mounted applications ◇ Low profile package 6.9± 0.25 3.1± 0.25 5. 9 ± 0. 25 ◇ Built-in strain relief ◇ Metal silicon junction, majority carrier conduction ◇ High surge capability ◇ High current capability,low forward voltage drop 7.8± 0. 2 2. 3 ± 0. 15 ◇ Low power loss,high effciency ◇ For use in low voltage high frequency inverters,free 111 wheeling and polarity protection applications ◇ Guardring for overvoltage protection 1. 3± 0. 25 0.25± 0.06 0.203MAX o ◇ High temperature soldering guaranteed:250 C/10 1 11 seconds at terminals MECHANICAL DATA ◇ Case:JEDEC DO-214AB,molded plastic over 1111passivated chip Terminals:Solder Plated, solderable per MIL-STD-750, ◇ 1111Method 2026 ◇ Polarity: Color band denotes cathode end ◇ Weight: 0.007 ounces, 0.21 gram Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified B520C B530C B540C B550C B560C UNITS Maximum recurrent peak reverse voltage VRRM 20 30 40 50 60 V Maximum RMS voltage VRWS 14 21 28 35 42 V Maximum DC blocking voltage VDC 20 30 40 50 60 V Maximum average forw ord rectified current at c TL(SEE FIG.1) (NOTE 2) I(AV) 5.0 A Peak forw ard surge current 8.3ms single halfc sine-w ave superimposed on rated load(JEDEC c Method) IFSM 175.0 A Maximum instantaneous forw ard voltage at v 5.0A(NOTE.1) Maximum DC reverse current @TA=25oC VF 0.50 0.5 IR Operating junction and storage temperature range Storage temperature range V mA 20 at rated DC blockjing voltage(NOTE1) @TA=100oC Typical thermal resitance (NOTE2) 0.70 RθJA 50.0 RθJL 10.0 TSTG TJ o C/W o -65--- +150 -65--- +150 C -65--- +150 o C NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle 2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm 2)copper pad areas www.diode.kr Diode Semiconductor Korea B520C-B560C 8.0 B520C-B540C B550C-B560C FIG.2-- PEAK FORWARD SURGE CURRENT 200 Resistive or inductive Load 6.0 P.C.B.MOUNTED ON 0.55"X0.55"(14.0X14.0mm) COPPERPAD AREAS 4.0 2.0 0 50 60 70 80 90 100 110 120 130 140 150 160 PEAK FORWARD SURGE CURRENT,AMPERES AVERAGE FORWARD RECTIFIED CURRENT,AMPERES FIG.1 -- FORWARD DERATING CURVE 175 TJ=TJ MAX. 8.3ms Single Half Sine-Wave (JEDEC Method) 150 125 100 75 50 25 0 1 AMBIENT TEMPERATURE ℃ TJ=125OC 10.0 TJ=150OC Puise Width=300 S 1%DUTY CYCLE O 0.01 0 TJ=25 C B520C-B540C B550C-B560C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1000 100 B520C-B540C B550C-B560C REVERSE VOLTAGE,VOLTS 0 T J=125 C 1 0 TJ=75 C 0.1 B520C-B540C B550C-B560C 0.01 0.001 0 TJ=25 0C 20 40 60 80 100 100 O TJ=25 C f=1.0MHz Vsig=50mVp-p 10 20 10 FIG.6-- TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE OC/W JUNCTION CAPACLTANCE pF FIG.5-TYPICAL JUNCTION CAPACITANCE 1.0 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,％ INSTANTANEOUS FORWARD VOLTAGE,VOLTS 10 0.1 50 FIG.4 -- TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT,MICROAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES 30.0 0.1 10 NUMBER OF CYCLES AT 60HZ FIG.3 -- TYPICAL FORWARD CHARACTERISTICS 1 5 100 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION,SEC www.diode.kr