2 GHz to 6 GHz, 45 dBm Power Amplifier HMC7885 Data Sheet FUNCTIONAL BLOCK DIAGRAM 2 GHz to 6 GHz 21 dB typical small signal gain 45 dBm typical saturated RF output power (POUT) 18-lead, hermetically sealed module −30°C to +60°C operating temperature APPLICATIONS Test and measurement equipment Communications Electronic warfare (EW) Military Traveling wave tube (TWT) replacements SATCOM Commercial and military radars 18 NIC 17 VDD1 16 GNDDC 1 VG1 2 GNDDC 3 VG1 4 GNDRFIN 15 GNDRFOUT 5 RFIN 6 GNDRFIN 14 RFOUT 13 GNDRFOUT 7 VG2 8 GNDDC 12 NIC 11 VDD2 10 GNDDC 9 VG2 12967-001 FEATURES Figure 1. GENERAL DESCRIPTION The HMC7885 is a 32 W gallium nitride (GaN), monolithic microwave integrated circuit (MMIC) power amplifier (PA) module that operates between 2 GHz and 6 GHz, and is provided in an 18-lead hermetically sealed module. The amplifier typically provides 21 dB of small signal gain and 45 dBm of saturated radio frequency (RF) output power. The amplifier draws 2200 mA of quiescent current (IDD) from a 28 V dc supply. The RF input and output are dc blocked and matched to 50 Ω for ease of use. Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2017 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com HMC7885 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Pin Configuration and Function Descriptions..............................5 Applications ....................................................................................... 1 Typical Performance Characteristics ..............................................6 General Description ......................................................................... 1 Applications Information .................................................................9 Functional Block Diagram .............................................................. 1 Evaluation Board Assembly .......................................................... 10 Revision History ............................................................................... 2 Bill of Materials ........................................................................... 10 Specifications..................................................................................... 3 Outline Dimensions ....................................................................... 11 Absolute Maximum Ratings ............................................................ 4 Ordering Guide .......................................................................... 11 ESD Caution .................................................................................. 4 REVISION HISTORY 1/2017—Revision 0: Initial Version Rev. 0 | Page 2 of 11 Data Sheet HMC7885 SPECIFICATIONS VDD = VDD1 = VDD2 = 28 V dc, VGG = VG1 = VG2, TA = 25°C, unless otherwise noted. Adjust VGG between −5 V to 0 V to achieve a total IDD = 2200 mA typical (1100 mA per side). Table 1. Parameter FREQUENCY RANGE GAIN Small Signal Gain Power Gain Gain Flatness VOLTAGE STANDING WAVE RATIO (VSWR) Input Output RF OUTPUT Saturated Output Power (PSAT) Output Power for 1 dB Compression (P1dB) Output Third-Order Intercept (IP3) Linear Power Output POWER ADDED EFFICIENCY (PAE) Min 2 Typ 21 17 ±2 Max 6 Unit GHz Test Conditions/Comments dB dB dB 2:1 2:1 45 39 53 34 25 dBm dBm dBm dBm % Rev. 0 | Page 3 of 11 5 dB compression with continuous wave (CW) input At PSAT HMC7885 Data Sheet ABSOLUTE MAXIMUM RATINGS ESD CAUTION Table 2. Parameter Drain Bias Voltage (VDD1, VDD2) Gate Bias Voltage (VG1, VG2) RF Input (RFIN) Power Operating Temperature1 Junction Temperature (TJ) Storage Temperature2 1 2 Rating 32 V −8 V dc to 0 V dc 36 dBm −30°C to +60°C 225°C −65°C to +150°C For operation with a continuous wave input. This device is not surface mountable and is not intended nor suitable for use in a solder reflow process. This device must not be exposed to ambient temperatures above 150°C. Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Rev. 0 | Page 4 of 11 Data Sheet HMC7885 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS (18) NIC VG1 (1) (17) VDD1 GNDDC (2) HMC7885FH18 (16) GNDDC (15) GNDRFOUT (14) RFOUT (13) GNDRFOUT (12) NIC (11) VDD2 GNDDC (8) (10) GNDDC VG2 (9) NOTES 1. THE PACKAGE BASE MUST BE MOUNTED TO A SUITABLE HEAT SINK FOR THE RF AND DC GROUND. IT IS RECOMMENDED TO USE 0-80 SOCKET CAP SCREWS. 12967-002 VG1 (3) GNDRFIN (4) RFIN (5) GNDRFIN (6) VG2 (7) Figure 2. Pin Configuration Table 3. Pin Function Descriptions Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Package Base Mnemonic VG1 GNDDC VG1 GNDRFIN RFIN GNDRFIN VG2 GNDDC VG2 GNDDC VDD2 NIC GNDRFOUT RFOUT GNDRFOUT GNDDC VDD1 NIC GND Description Supply Voltage for MMIC 1 Gates. This pin is typically −1.3 V dc. Pin 1 is connected internally to Pin 3. Power Supply Ground. Supply Voltage for MMIC 1 Gates. This pin is typically −1.3 V dc. Pin 3 is connected internally to Pin 1. RF Input Ground. RF Input. This pin is dc-coupled and matched to 50 Ω. RF Input Ground. Supply Voltage for MMIC 2 Gates. This pin is typically −1.3 V dc. Pin 7 is connected internally to Pin 9. Power Supply Ground. Supply Voltage for MMIC 2 Gates. This pin is typically −1.3 V dc. Pin 9 is connected internally to Pin 7. Power Supply Ground. Supply Voltage for MMIC 2 Drains. Not Internally Connected. However, this pin can be connected externally to the RF and/or dc ground. RF Output Ground. RF Output. This pin is ac-coupled and matched to 50 Ω. RF Output Ground. Power Supply Ground. Supply Voltage for MMIC 1 Drains. Not Internally Connected. However, this pin can be connected externally to the RF and/or dc ground. The package base must be mounted to a suitable heat sink for the RF and dc ground. It is recommended to use 0-80 socket cap screws. Rev. 0 | Page 5 of 11 HMC7885 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS 30 30 20 25 10 20 0 15 GAIN (dB) –20 –30 –40 10 5 0 –5 –50 1 2 3 4 5 FREQUENCY (GHz) 6 7 12967-003 –80 0 +25°C +60°C –30°C –15 8 0 1 6 5 3 4 FREQUENCY (GHz) 2 7 Figure 6. Gain vs. Frequency at Various Temperatures 0 50 –10 45 POUT (dBm) –20 –30 40 35 –40 30 +60°C +25°C –30°C –50 P1dB P5dB PSAT –60 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 8 12967-004 RETURN LOSS (dB) 7 –20 Figure 3. Gain and Input/Output Return Loss vs. Frequency Figure 4. Output Return Loss vs. Frequency at Various Temperatures 25 0 1 2 3 4 FREQUENCY (GHz) 5 6 Figure 7. POUT vs. Frequency for P1dB, Output Power for 5 dB Compression (P5dB), and PSAT 0 42 –10 41 –20 40 P1dB (dBm) RETURN LOSS (dB) 8 12967-006 GAIN INPUT RETURN LOSS OUTPUT RETURN LOSS –70 12967-007 –60 –10 –30 –40 –50 39 38 37 +25°C +60°C –30°C –70 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 +60°C +25°C –30°C 36 8 12967-005 –60 35 0 Figure 5. Input Return Loss vs. Frequency at Various Temperatures 1 2 3 4 FREQUENCY (GHz) 5 6 Figure 8. P1dB vs. Frequency at Various Temperatures Rev. 0 | Page 6 of 11 7 12967-015 GAIN (dB) –10 HMC7885 47.0 20 46.5 18 46.0 16 45.5 14 POWER GAIN (dB) 45.0 44.5 44.0 43.5 12 10 8 6 43.0 4 42.0 0 1 2 3 4 FREQUENCY (GHz) 5 6 7 0 2.0 2.5 3.0 3.5 4.0 4.5 FREQUENCY (GHz) 5.0 5.5 6.0 8 Figure 11. Power Gain vs. Frequency for P5dB and PSAT Figure 9. P5dB vs. Frequency at Various Temperatures 0 48.0 +60°C +25°C –30°C 47.5 +60°C +25°C –30°C –10 –20 ISOLATION (dB) 47.0 46.5 46.0 –30 –40 –50 –60 45.5 –70 45.0 0 1 2 3 4 FREQUENCY (GHz) 5 6 7 12967-009 PSAT (dBm) P5dB PSAT 2 12967-008 42.5 12967-011 +60°C +25°C –30°C 12967-013 P5dB (dBm) Data Sheet –80 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 Figure 12. Reverse Isolation vs. Frequency at Various Temperatures Figure 10. PSAT vs. Frequency at Various Temperatures Rev. 0 | Page 7 of 11 HMC7885 Data Sheet POUT GAIN IDD PAE 35 4000 30 3000 25 20 2000 15 10 1000 5 40 5000 35 4000 30 25 3000 20 2000 15 10 1000 5 10 15 20 25 PIN (dBm) 30 35 40 0 0 7000 50 POUT GAIN IDD PAE 40 6000 30 4000 25 3000 20 15 IDD (mA) 5000 35 2000 10 1000 0 0 5 10 15 20 25 30 35 PIN (dBm) 40 12967-012 5 0 10 15 20 25 PIN (dBm) 30 35 Figure 15. Power Compression at 6 GHz Figure 13. Power Compression at 2 GHz 45 5 Figure 14. Power Compression at 4 GHz Rev. 0 | Page 8 of 11 0 40 12967-014 0 0 12967-010 5 0 POUT (dBm), GAIN (dB), PAE (%) 6000 POUT GAIN IDD PAE 45 5000 POUT (dBm), GAIN (dB), PAE (%) 40 IDD (mA) POUT (dBm), GAIN (dB), PAE (%) 45 50 IDD (mA) 6000 50 Data Sheet HMC7885 APPLICATIONS INFORMATION To turn on the amplifier, complete the following steps: To turn off the amplifier, complete the following steps: 1. 2. 3. 1. 2. 3. 4. 4. Set VG1 and VG2 to −5 V. Set VDD1 and VDD2 to +28 V. Ramp the gate voltage until the quiescent current (IDD) = 1100 mA per side (2200 mA total). Apply the RF input power. Rev. 0 | Page 9 of 11 Remove the RF input power. Set VG1 and VG2 to −5 V. Set VDD1 and VDD2 to 0 V. Set VG1 and VG2 to 0 V. HMC7885 Data Sheet 12967-001 EVALUATION BOARD ASSEMBLY Figure 16. Evaluation Fixture BILL OF MATERIALS Use RF circuit design techniques for the circuit board used in the application. Provide 50 Ω impedance for the signal lines, and connect the package ground leads and package base directly to the ground plane. DC bias voltages can be applied through either J3 or J4. The evaluation board shown is available from Analog Devices, Inc., upon request. Table 4. Bill of Materials for Evaluation Board Assembly EV1HMC7885FH18 Item J1, J2 J3, J4 JP1 to JP4 C1 to C6 C7 to C10 Description SMA jack DC, 0.1” terminal strip 6.9 mm, SMT jumper 1 μF capacitors, 0603 package 10 μF capacitor, 1210 package U1 PCB HMC7885FH18 600-00941-00 evaluation printed circuit board (PCB); circuit board material: Rogers 4350B Rev. 0 | Page 10 of 11 Data Sheet HMC7885 OUTLINE DIMENSIONS 0.090 0.085 0.079 0.980 0.148 0.074 0.080 0.071 0.024 1 18 1.346 0.157 0.299 0.441 9 0.047 0.039 0.031 1.051 0.012 0.010 0.008 0.069 (Measured at package center) 10 TOP VIEW 0.254 0.472 SIDE VIEW 0.050 0.039 0.028 R 0.51 (4 ×) (Measured at flange tabs) 0.909 0.008 0.006 0.005 END VIEW PKG-000000 0.073 0.065 0.057 01-20-2017-B 0.162 0.154 0.146 Figure 17. 18-Lead Multichip Module Hermetic Ceramic/Metal Package [CM] (MC-18-1) Dimensions shown in inches ORDERING GUIDE Model1 HMC7885FH18 EV1HMC7885FH18 1 Temperature Range –30°C to +60°C Package Description 18-Lead Multichip Module Hermetic Ceramic/Metal Package [CM] Evaluation Board The HMC7885FH18 is an RoHS-compliant part. ©2017 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D12967-0-1/17(0) Rev. 0 | Page 11 of 11 Package Option MC-18-1