AON6522 25V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial VDS ID (at VGS=10V) 25V 200A RDS(ON) (at VGS=10V) < 0.95mΩ RDS(ON) (at VGS = 4.5V) < 1.3mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C C V A 450 71 IDSM TA=70°C ±20 151 IDM TA=25°C Continuous Drain Current Units V 200 ID TC=100°C Maximum 25 A 57 IAS 50 A Avalanche energy L=0.1mH C EAS 125 mJ VDS Spike VSPIKE 36 V Avalanche Current Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: Jan 2012 7.3 Steady-State Steady-State RθJA RθJC W 4.7 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 -55 to 150 Typ 14 40 1 www.aosmd.com °C Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON6522 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qg(4.5V) Total Gate Charge Gate Source Charge Qgd tD(on) 100 nA 1.4 2 V 0.75 0.95 1.1 1.4 1 1.3 mΩ 1 V 100 A 100 0.7 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 0.5 mΩ S 7036 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs µA 5 1 Units V 1 TJ=55°C IGSS Max 25 VDS=25V, VGS=0V VGS(th) Coss Typ pF 2778 pF 353 pF 1.1 1.7 Ω 107 145 nC 49.7 68 nC 11.7 nC Gate Drain Charge 21.4 nC Turn-On DelayTime 12.3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 12.8 ns 68.5 ns tf Turn-Off Fall Time 28.8 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/µs 31 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 106 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Jan 2012 www.aosmd.com Page 2 of 6 AON6522 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 4.5V 80 VDS=5V 80 3V 2.5V 10V 60 ID(A) ID (A) 60 40 40 20 20 125°C 25°C VGS=2V 0 0 0 1 2 3 4 0.0 5 2.0 1.0 1.5 2.0 2.5 3.0 Normalized On-Resistance 1.6 1.5 RDS(ON) (mΩ Ω) 0.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 1.0 0.5 VGS=10V 0.0 VGS=10V ID=20A 1.4 1.2 1 VGS=4.5V ID=20A 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 2 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.00E+02 ID=20A 1.00E+01 1.00E+00 125°C 125°C 1.00E-01 IS (A) RDS(ON) (mΩ Ω) 1.5 1 25°C 1.00E-02 1.00E-03 0.5 25°C 1.00E-04 1.00E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Jan 2012 4 www.aosmd.com 0 0.2 0.4 0.6 0.8 1 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6522 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10000 Ciss 8000 Capacitance (pF) 8 VGS (Volts) 9000 VDS=15V ID=20A 6 4 2 7000 6000 5000 4000 3000 Coss 2000 1000 0 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics 120 0 RDS(ON) limited 10µs 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 100µs 10.0 1ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 400 10µs Power (W) 100.0 5 30 500 1000.0 ID (Amps) Crss 0 TJ(Max)=150°C TC=25°C 300 200 100 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.5°C/W PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Jan 2012 www.aosmd.com Page 4 of 6 AON6522 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 200 Current rating ID(A) 250 Power Dissipation (W) 100 60 40 20 150 100 50 0 0 0 25 50 75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE (° °C) Figure 13: Current De-rating (Note F) 150 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=55°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Jan 2012 www.aosmd.com Page 5 of 6 AON6522 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: Jan 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6