BTA201 series B, E and ER Triacs logic level Rev. 02 — 13 January 2006 Product data sheet 1. Product profile 1.1 General description Passivated, guaranteed commutation triacs in a plastic package. The ‘sensitive gate’ E and ER series are intended for interfacing with low power drivers, including microcontrollers. The high commutation B series are designed to commutate the full RMS current at the maximum junction temperature without the aid of a snubber. 1.2 Features ■ Suitable for interfacing with low power drivers, including microcontrollers ■ Reverse pinning option (ER type) 1.3 Applications ■ Motor control ■ Solenoid drivers 1.4 Quick reference data ■ ■ ■ ■ ■ ■ ITSM ≤ 12.5 A VDRM ≤ 600 V (BTA201-600B) VDRM ≤ 600 V (BTA201-600E) VDRM ≤ 800 V (BTA201-800B) VDRM ≤ 800 V (BTA201-800E) VDRM ≤ 800 V (BTA201-800ER) ■ ■ ■ ■ ■ ■ IT(RMS) ≤ 1 A IGT ≤ 50 mA (BTA201-600B) IGT ≤ 10 mA (BTA201-600E) IGT ≤ 50 mA (BTA201-800B) IGT ≤ 10 mA (BTA201-800E) IGT ≤ 10 mA (BTA201-800ER) 2. Pinning information Table 1: Pin Pinning Description Simplified outline Symbol B and E series 1 main terminal 2 (T2) T2 2 gate (G) sym051 3 main terminal 1 (T1) G ER series 1 main terminal 1 (T1) 2 gate (G) 3 main terminal 2 (T2) T1 321 SOT54 (TO-92) BTA201 series B, E and ER Philips Semiconductors Triacs logic level 3. Ordering information Table 2: Ordering information Type number Package BTA201-600B Name Description Version TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 BTA201-600E BTA201-800B BTA201-800E BTA201-800ER 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage Conditions Min Max Unit BTA201-600B [1] - 600 V BTA201-600E [1] - 600 V BTA201-800B - 800 V BTA201-800E - 800 V BTA201-800ER - 800 V - 1 A t = 20 ms - 12.5 A t = 16.7 ms - 13.7 A t = 10 ms - 0.78 A2s ITM = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 50 A/µs IT(RMS) RMS on-state current full sine wave; Tlead ≤ 54.3 °C; see Figure 4 and 5 ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 I2t I2t dlT/dt rate of rise of on-state current IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.1 W Tstg storage temperature −40 +150 °C Tj junction temperature - 125 °C [1] for fusing over any 20 ms period Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. BTA201_SER_B_E_ER_2 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 13 January 2006 2 of 12 BTA201 series B, E and ER Philips Semiconductors Triacs logic level 003aaa954 1.5 Ptot α (W) 35 Tlead (max) (°C) α = 180° 120° α 1 90° 65 60° 30° 95 0.5 125 0 0 0.2 0.4 0.6 0.8 1 IT(RMS) (A) 1.2 α = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values 003aaa956 16 ITSM (A) 12 8 4 0 1 102 10 n 103 f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA201_SER_B_E_ER_2 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 13 January 2006 3 of 12 BTA201 series B, E and ER Philips Semiconductors Triacs logic level 003aaa955 103 ITSM IT ITSM (A) t T Tj(init) = 25 °C max 102 (1) 10 10−5 10−4 10−2 10−3 tp (s) 10−1 tp ≤ 20 ms (1) dIT/dt limit Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values 003aaa958 3 003aaa957 1.2 IT(RMS) IT(RMS) (A) 54.3 °C 1 (A) 0.8 2 0.6 0.4 1 0.2 0 10−2 10−1 1 10 surge duration (s) 0 −50 0 50 150 100 Tlead (°C) f = 50 Hz; Tlead ≤ 54.3 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of lead temperature; maximum values BTA201_SER_B_E_ER_2 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 13 January 2006 4 of 12 BTA201 series B, E and ER Philips Semiconductors Triacs logic level 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Rth(j-lead) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from junction to full cycle; see Figure 6 lead half cycle; see Figure 6 - - 60 K/W - - 80 K/W thermal resistance from junction to printed-circuit board ambient mounted; lead length = 4 mm - 150 - K/W 003aaa961 102 Zth(j-lead) (K/W) 10 (1) 1 (2) P 10−1 tp t 10−2 10−5 10−4 10−3 10−2 10−1 1 tp (s) 10 (1) Unidirectional (2) Bidirectional Fig 6. Transient thermal impedance as a function of pulse duration BTA201_SER_B_E_ER_2 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 13 January 2006 5 of 12 BTA201 series B, E and ER Philips Semiconductors Triacs logic level 6. Static characteristics Table 5: Static characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions BTA201-600B BTA201-800B Min IGT IL gate trigger current latching current Typ BTA201-600E BTA201-800E BTA201-800ER Max Min Typ Unit Max VD = 12 V; IT = 0.1 A; see Figure 8 T2+ G+ - - 50 - - 10 mA T2+ G− - - 50 - - 10 mA T2− G− - - 50 - - 10 mA T2+ G+ - - 30 - - 12 mA T2+ G− - - 50 - - 20 mA T2− G− - - 30 - - 12 mA VD = 12 V; IGT = 0.1 A; see Figure 10 IH holding current VD = 12 V; IGT = 0.1 A; see Figure 11 - - 30 - - 12 mA VT on-state voltage IT = 1.4 A; see Figure 9 - 1.2 1.5 - 1.2 1.5 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; see Figure 7 - 0.7 1.5 - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 °C 0.2 0.3 - 0.2 0.3 - V VD = VDRM(max); Tj = 125 °C - 0.1 0.5 - 0.1 0.5 mA ID off-state current BTA201_SER_B_E_ER_2 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 13 January 2006 6 of 12 BTA201 series B, E and ER Philips Semiconductors Triacs logic level 7. Dynamic characteristics Table 6: Dynamic characteristics Symbol Parameter Conditions BTA201-600B BTA201-800B dVD/dt rate of rise of off-state voltage VDM = 67 % VDRM(max); Tj = 125 °C; exponential waveform; gate open circuit 1000 - - 200 - - V/µs dIcom/dt rate of change of commutating current VDM = 400 V; Tj = 125 °C; dVcom/dt = 20 V/µs; gate open circuit 12 - - 2.5 - - A/ms VDM = 400 V; Tj = 125 °C; dVcom/dt = 10 V/µs; gate open circuit 16 - - 3.5 - - A/ms ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs - 2 - - 2 - µs Min gate-controlled turn-on time tgt Typ BTA201-600E BTA21-800E BTA201-800ER Max Min Typ 001aab101 1.6 IGT(25°C) 1.2 2 Max 003aaa959 3 VGT(Tj) VGT(25°C) Unit IGT(Tj) (1) (2) (3) 0.8 1 (3) (2) (1) 0.4 −50 0 50 100 150 Tj (°C) 0 −50 0 50 100 Tj (°C) 150 (1) T2− G− (2) T2+ G− (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature BTA201_SER_B_E_ER_2 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 13 January 2006 7 of 12 BTA201 series B, E and ER Philips Semiconductors Triacs logic level 003aaa960 2 001aab100 3 IT (A) IL(Tj) IL(25°C) 1.6 2 1.2 (1) (2) 0.8 (3) 1 0.4 0 0 0.4 0.8 1.2 1.6 2 0 −50 0 50 100 150 Tj (°C) VT (V) Vo = 1.02 V; Rs = 0.358 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage 001aab099 3 Fig 10. Normalized latching current as a function of junction temperature IH(Tj) dVD/dt IH(25°C) (V/µs) 2 003aaa962 104 103 (1) (2) 1 0 −50 102 0 50 100 150 10 0 50 100 Tj (°C) Tj °C 150 Gate open circuit (1) BTA201 series B (2) BTA201 series E and ER Fig 11. Normalized holding current as a function of junction temperature Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values BTA201_SER_B_E_ER_2 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 13 January 2006 8 of 12 BTA201 series B, E and ER Philips Semiconductors Triacs logic level 8. Package outline Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC SOT54 JEDEC JEITA TO-92 SC-43A EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 Fig 13. Package outline SOT54 (TO-92) BTA201_SER_B_E_ER_2 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 13 January 2006 9 of 12 BTA201 series B, E and ER Philips Semiconductors Triacs logic level 9. Revision history Table 7: Revision history Document ID Release date Data sheet status Change Doc. number notice Supersedes BTA201_SER_B_E_ER_2 20060113 Product data sheet - BTA201_SER_B_E_ER_1 Modifications: BTA201_SER_B_E_ER_1 • • • Figure 4: Figure note corrected Table 6 “Dynamic characteristics”: Units corrected Figure 12: Figure title corrected 20050825 Product data sheet - BTA201_SER_B_E_ER_2 Product data sheet - 9397 750 15154 - © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 13 January 2006 10 of 12 BTA201 series B, E and ER Philips Semiconductors Triacs logic level 10. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Trademarks 12. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] BTA201_SER_B_E_ER_2 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 13 January 2006 11 of 12 Philips Semiconductors BTA201 series B, E and ER Triacs logic level 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 13 January 2006 Document number: BTA201_SER_B_E_ER_2 Published in The Netherlands