CHENMKO ENTERPRISE CO.,LTD CHM2316QPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-74/SOT-457 FEATURE * Small flat package. (SC-74/SOT-457) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. (1) (6) 0.95 1.7~2.1 2.7~3.1 0.95 CONSTRUCTION (3) * N-Channel Enhancement (4) 0.25~0.5 1.4~1.8 0.935~1.3 0.08~0.2 CIRCUIT 6 1 D D D S G D Absolute Maximum Ratings Symbol 0~0.15 0.3~0.6 4 2.6~3.0 3 Dimensions in millimeters SC-74/SOT-457 TA = 25°C unless otherwise noted Parameter CHM2316QPT Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V Maximum Drain Current - Continuous 6.0 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) 24 2000 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C Note : 1. Surface Mounted on FR4 Board , t <=5sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 °C/W 2006-08 RATING CHARACTERISTIC CURVES ( CHM2316QPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 30 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS 1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = 250 µA 1 3 VGS=10V, ID=6.0A 27 34 VGS=4.5V, ID=4.9A 36 50 VDS =15V, ID = 6.0A 8.0 V mΩ S SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd t on Turn-On Time tr Rise Time t off Turn-Off Time tf Fall Time 12.3 VDS=15V, ID=6.0A 16 nC 1.5 VGS=10V 2.5 V DD= 15V 9 I D = 5.5A , VGS = 10 V 3 8 RGEN= 3 Ω 24 50 4 10 20 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = 1.7A , VGS = 0 V (Note 1) (Note 2) 1.7 A 1.2 V RATING CHARACTERISTIC CURVES ( CHM2316QPT ) Typical Electrical Characteristics Figure 2. Transfer Characteristics Figure 1. Output Characteristics 40 40 VG S =10 , 9 , 8 , 7 , 6 V VG S =5 . 0 V TJ=25°C I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 30 20 VG S =4 . 0 V 10 30 TJ=-55°C 20 10 TJ=125°C VG S =3 . 0 V 0 0 1.0 3.0 4.0 2.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 0 5.0 0 5.0 6.0 VGS=10V ID=6A 1.9 R DS(on) , NORMALIZED 8 6 4 2 0 0 3 6 9 Qg , TOTAL GATE CHARGE (nC) 12 15 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE VGS , GATE TO SOURCE VOLTAGE (V) 4.0 Figure 4. On-Resistance Variation with Temperature VDS=15V ID=6A THRESHOLD VOLTAGE 3.0 2.2 10 Vth , NORMALIZED GATE-SOURCE 2.0 VGS , GATE-TO-SOURCE VOLTAGE (V) Figure 3. Gate Charge 1.3 1.0 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200