Powerex Power CM600DXL-34SA Dual igbt nx-series module 600 amperes/1700 volt Datasheet

CM600DXL-34SA
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Dual IGBT
NX-Series Module
600 Amperes/1700 Volts
A
D
AX
E
AU
F
G
18
MN
J
H
AD
J
AR
AS
K
17
16
15
14
13
AT
J
H
H
AK
12
11
L
AQ
G
10
H
9
1
P
Z
Y
DETAIL “C & D”
AP
EB
3
8
7
W
P
DETAIL “A”
AB (6 PLACES)
2
QR S
U T
AN
AM
P V
X
H
DETAIL “A”
4
AL
AA (4 PLACES)
DETAIL “B”
BA
5
G
45°
M
6
H
M
AE
B
AC
AH
BA
AZ
DETAIL “C”
AG
AF
AK
DETAIL “B”
Es1 G1 TH2
(18) (17) (16)
Th
NTC
TH1 Cs1
(15) (14)
AG
Es2 G2 Cs2
(13) (12) (11)
11
NC(10)
C1(1)
C1(2)
Tr1
Tr2
E2(3)
Di1
Di2
NC(9)
C2E1 (8)
E2(4)
NC
(5)
NC
(6)
AJ
C
C2E1 (7)
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
0.5 to 3
±0.2
over
3 to 6
±0.3
over
6 to 30
±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2
The tolerance of size between
terminals is assumed to ±0.4
AV
AW
AU
AY
BB
G
10
H
9
DETAIL “D”
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
Z
AA
06/13 Rev. 1
Inches
Millimeters
5.98
4.79
0.81
5.39
4.33±0.02
0.53
0.81±0.012
0.15
0.6
0.74±0.012
0.75
0.3
0.42
0.86
3.72±0.012
3.48
1.08
1.62
1.95
1.53
0.47
0.31
0.26
0.61
Dia.
152.0
121.7
20.5
137.0
110.0±0.5
13.5
20.5±0.3
3.81
15.24
19.05±0.3
19.24
7.75
10.74
22.0
94.5±0.3
88.53
27.53
41.22
49.72
39.0
12.0
8.0
6.5
15.64
5.5 Dia.
Dimensions
AB
AC
AD
AE
AF
AG
AH
AJ
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
AY
AZ
BA
BB
Inches
Millimeters
M6 Metric
0.6
0.14
4.16±0.012
0.55
0.27
0.14
0.67+0.04/-0.02
0.12
0.04
0.02
0.05
0.18
0.5
0.18 Dia.
0.10 Dia.
0.09 Dia.
0.45±0.012
0.36±0.012
0.46±0.012
4.18±0.012
0.017±0.012
0.51
0.54
0.53±0.012
M6
15.14
3.6
105.9±0.3
14.0
7.0
3.5
17.0+1.0/-0.5
3.0
1.15
0.65
1.2
4.5
12.5
4.5 Dia.
2.6 Dia.
2.25 Dia.
11.36±0.3
9.15±0.3
11.8±0.3
106.3±0.3
0.45±0.3
13.0
13.7
11.35±0.3
Description:
Powerex IGBT Modules are
designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM600DXL-34SA is a 1700V
(VCES), 600 Ampere Dual
IGBT Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
600
34
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DXL-34SA
Dual IGBT NX-Series Module
600 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Rating
Units
Collector-Emitter Voltage (VGE = 0V)
VCES
1700
Volts
Gate-Emitter Voltage (VCE = 0V)
VGES
±20
Volts
Collector Current (DC, TC = 125°C)*2,*4
IC
600
Amperes
Collector Current (Pulse, Repetitive)*3
ICRM
1200
Amperes
Ptot
5760
Watts
Total Power Dissipation (TC = 25°C)*2,*4
Emitter
Current*2
*1
IE
Emitter Current (Pulse, Repetitive)*3
600
Amperes
IERM*1
1200
Amperes
VISO
4000
Volts
Tj(max)
175
°C
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
Maximum Junction Temperature, Instantaneous Event (Overload)
Storage Temperature
Tstg
-40 to +125
°C
0
0
18.5
Th
Tr1
Tr1
27.0
Di1
Di1
41.1
Tr2
Tr2
Tr2
Tr2
70.2
Di2
Di2
Di2
Di2
84.3
95.8
Tr1
Di1
74.5
0
70.8
71.8
84.9
85.9
Tr1
Di1
48.7
29.5
30.5
43.6
44.6
27.6
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
92.1
°C
71.0
°C
-40 to +150
45.1
47.2
125
Tj(op)
24.2
TC(max)
Operating Junction Temperature, Continous Operation (Under switching)
0
Maximum Case
Temperature*4
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
2
06/13 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DXL-34SA
Dual IGBT NX-Series Module
600 Amperes/1700 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
Gate-Emitter Leakage Current
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 60mA, VCE = 10V
5.4
6.0
6.6
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 600A, VGE = 15V, Tj = 25°C*5
—
2.0
2.5
Volts
(Terminal)
IC = 600A, VGE = 15V, Tj = 125°C*5
—
2.2
—
Volts
150°C*5
—
2.25
—
Volts
IC = 600A, VGE = 15V, Tj = 25°C*5
—
1.9
2.4
Volts
125°C*5
—
2.1
—
Volts
IC = 600A, VGE = 15V, Tj = 150°C*5
—
2.15
—
Volts
—
—
158
nF
VCE = 10V, VGE = 0V
—
—
13
nF
—
—
2.9
nF
VCC = 1000V, IC = 600A, VGE = 15V
—
3310
—
nC
Collector-Emitter Cutoff Current
IC = 600A, VGE = 15V, Tj =
Collector-Emitter Saturation Voltage
VCE(sat)
(Chip)
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Gate Charge
QG
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Emitter-Collector Voltage
IC = 600A, VGE = 15V, Tj =
td(on)
—
—
900
ns
tr
VCC = 1000V, IC = 600A, VGE = ±15V,
—
—
150
ns
td(off)
RG = 0Ω, Inductive Load
—
—
900
ns
—
—
400
ns
25°C*5
—
4.1
5.3
Volts
IE = 600A, VGE = 0V, Tj = 125°C*5
—
2.9
—
Volts
tf
*1
VEC
IE = 600A, VGE = 0V, Tj =
(Terminal)
150°C*5
—
2.7
—
Volts
VEC*1
IE = 600A, VGE = 0V, Tj = 25°C*5
—
4.0
5.2
Volts
(Chip)
IE = 600A, VGE = 0V, Tj = 125°C*5
—
2.8
—
Volts
IE = 600A, VGE = 0V, Tj = 150°C*5
—
2.6
—
Volts
IE = 600A, VGE = 0V, Tj =
Emitter-Collector Voltage
Reverse Recovery Time
trr
VCC = 1000V, IE = 600A, VGE = ±15V
—
—
300
ns
Reverse Recovery Charge
Qrr*1
RG = 0Ω, Inductive Load
—
23
—
µC
Turn-on Switching Energy per Pulse
Eon
VCC = 1000V, IC = IE = 600A, VGE = ±15V
—
167
—
mJ
Turn-off Switching Energy per Pulse
Eoff
RG = 0Ω, Tj = 150°C
—
168
—
mJ
Reverse Recovery Energy per Pulse
*1
Inductive Load
—
106
—
mJ
Main Terminals-Chip,
—
—
0.6
mΩ
—
2.4
—
Ω
Internal Lead Resistance
*1
Err
RCC' + EE'
Per Switch,TC = 25°C*4
92.1
71.0
45.1
47.2
0
0
18.5
Th
Di1
Di1
Tr1
Tr1
27.0
Di1
Di1
41.1
Tr2
Tr2
Tr2
Tr2
70.2
Di2
Di2
Di2
Di2
84.3
95.8
Tr1
74.5
0
70.8
71.8
84.9
85.9
Tr1
48.7
29.5
30.5
43.6
44.6
27.6
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
Per Switch
24.2
rg
0
Internal Gate Resistance
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
06/13 Rev. 1
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DXL-34SA
Dual IGBT NX-Series Module
600 Amperes/1700 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified (continued)
NTC Thermistor Part
Characteristics
Symbol
Zero Power Resistance
R25
Deviation of Resistance
∆R/R
B Constant
Test Conditions
TC =
TC = 100°C, R100 = 493Ω*4
B(25/50)
Power Dissipation
25°C*4
Equation*6
Approximate by
Min.
Typ.
Max.
Units
4.85
5.00
5.15
kΩ
-7.3
—
+7.8
%
—
3375
—
K
P25
TC = 25°C*4
—
—
10
mW
Rth(j-c)Q
Per Inverter IGBT*4
—
—
26
K/kW
Rth(j-c)D
FWDi*4
—
—
39
K/kW
7
—
K/kW
31
35
40
in-lb
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance,
Per Inverter
Rth(c-f)
Thermal Grease Applied,
—
Per 1 Module*4,*7
Case to Heatsink
Mechanical Characteristics
Mounting Torque
Mt
Main Terminals, M6 Screw
Ms
Mounting to Heatsink, M5 Screw
22
27
31
in-lb
Creepage Distance
ds
Terminal to Terminal
22.5
—
—
mm
Terminal to Baseplate
16.8
—
—
mm
Clearance
da
Terminal to Terminal
15.5
—
—
mm
Terminal to Baseplate
11.3
—
—
mm
Weight
m
—
690
—
Grams
Flatness of Baseplate
ec
—
+100
µm
±0
On Centerline X, Y*8
Recommended Operating Conditons, Ta = 25°C
DC Supply Voltage
VCC
Gate-Emitter Drive Voltage
Applied Across C1-E2 Terminals
—
1000
1200
Volts
Applied Across
13.5
15.0
16.5
Volts
—
13
Ω
VGE(on)
G1-Es1/G2-Es2 Terminals
92.1
71.0
45.1
47.2
24.2
0
0
0
18.5
Th
Tr1
Di1
Di1
Tr1
Tr1
27.0
Di1
Di1
41.1
Tr2
Tr2
Tr2
Tr2
70.2
Di2
Di2
Di2
Di2
84.3
95.8
70.8
71.8
84.9
85.9
Tr1
74.5
29.5
30.5
43.6
44.6
48.7
+ : CONVEX
– : CONCAVE
Y
Per Switch
27.6
RG
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
R25
1
1
*6 B(25/50) = In(
)/(
–
)
R50 T25 T50
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
0
External Gate Resistance
MOUNTING SIDE
MOUNTING SIDE
LABEL SIDE
– : CONCAVE
0
X
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
+ : CONVEX
4
06/13 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DXL-34SA
Dual IGBT NX-Series Module
600 Amperes/1700 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
1000
11
800
600
10
400
9
200
0
8
0
2
4
6
8
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10
(Chip)
Tj = 25°C
Tj = 125°C
Tj = 150°C
0
200
400
600
800 1000 1200
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
104
10
Tj = 25°C
(Chip)
8
IC = 1200A
6
IC = 600A
4
IC = 360A
2
0
(Chip)
6
8
10
12
14
16
18
20
Tj = 25°C
Tj = 125°C
Tj = 150°C
103
102
COLLECTOR CURRENT, IC, (AMPERES)
06/13 Rev. 1
4.5
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25°C
(Chip)
VGE = 20V
15
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
1200
0
1
2
3
4
5
6
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DXL-34SA
Dual IGBT NX-Series Module
600 Amperes/1700 Volts
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
104
VGE = 0V
Cies
102
101
SWITCHING TIME, (ns)
CAPACITANCE, Cies, Coes, Cres, (nF)
103
Coes
100
100
101
tf
102
101
101
102
tr
VCC = 1000V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
102
103
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
103
104
td(off)
103
SWITCHING TIME, (ns)
SWITCHING TIME, (ns)
td(on)
Cres
10-1
10-1
td(on)
tf
102
101
101
tr
VCC = 1000V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
VCC = 1000V
VGE = ±15V
IC = 600A
Tj = 125°C
Inductive Load
td(on)
td(off)
102
tr
tf
102
COLLECTOR CURRENT, IC, (AMPERES)
6
td(off)
103
102
101
0
5
10
15
EXTERNAL GATE RESISTANCE, RG, (Ω)
06/13 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DXL-34SA
Dual IGBT NX-Series Module
600 Amperes/1700 Volts
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
VCC = 1000V
VGE = ±15V
IC = 600A
Tj = 150°C
Inductive Load
103
REVERSE RECOVERY, Irr (A), trr (ns)
SWITCHING TIME, (ns)
103
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
td(on)
td(off)
102
tr
tf
101
0
5
10
VCC = 1000V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
Irr
trr
101
101
15
102
103
EXTERNAL GATE RESISTANCE, RG, (Ω)
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE VS. VGE
(TYPICAL)
103
20
102
101
101
VCC = 1000V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
Irr
trr
102
EMITTER CURRENT, IE, (AMPERES)
06/13 Rev. 1
103
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
REVERSE RECOVERY, Irr (A), trr (ns)
102
IC = 600A
VCC = 1000V
16
12
8
4
0
0
1000
2000
3000
4000
5000
GATE CHARGE, QG, (nC)
7
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DXL-34SA
Dual IGBT NX-Series Module
600 Amperes/1700 Volts
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(TYPICAL)
103
102
102
101
101
101
104
SWITCHING ENERGY, Eon, Eoff, (mJ)
103
VCC = 1000V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
Eon
Eoff
Err
REVERSE RECOVERY ENERGY, Err, (mJ)
SWITCHING ENERGY, Eon, Eoff, (mJ)
104
100
103
102
103
101
101
101
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(TYPICAL)
103
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECOVERY ENERGY, Err, (mJ)
103
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECOVERY ENERGY, Err, (mJ)
100
103
102
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(TYPICAL)
102
VCC = 1000V
VGE = ±15V
IC = 600A
Tj = 125°C
Inductive Load
0
5
Eon
Eoff
Err
10
GATE RESISTANCE, RG, (Ω)
8
102
102
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
101
103
VCC = 1000V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
Eon
Eoff
Err
REVERSE RECOVERY ENERGY, Err, (mJ)
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(TYPICAL)
15
102
VCC = 1000V
VGE = ±15V
IC = 600A
Tj = 150°C
Inductive Load
101
0
5
Eon
Eoff
Err
10
15
GATE RESISTANCE, RG, (Ω)
06/13 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MAXIMUM)
TEMPERATURE CHARACTERISTICS
(NTC THERMISTER PART - TYPICAL)
100
102
10-1
101
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
26 K/kW
(IGBT)
Rth(j-c) =
39 K/kW
(FWDi)
10-2
10-3
10-5
10-4
10-3
10-2
TIME, (s)
06/13 Rev. 1
RESISTANCE, (kΩ)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
CM600DXL-34SA
Dual IGBT NX-Series Module
600 Amperes/1700 Volts
10-1
100
101
100
10-1
-50
-25
0
25
50
75
100 125
TEMPERATURE, (°C)
9
Similar pages