AP9970AGP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free G BVDSS 60V RDS(ON) 3mΩ ID 235A S Description AP9970A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. G D TO-220(P) S o Absolute Maximum Ratings@Tj=25 C(unless otherwise specified) Symbol Parameter . Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Drain Current (Chip) 235 A 120 A 120 A 480 A 277.8 W ID@TC=25℃ ID@TC=100℃ Drain Current, VGS @ 10V 3 Drain Current, VGS @ 10V 3 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 0.45 ℃/W 62 ℃/W 1 201501134 AP9970AGP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=60A - - 3 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=10V, ID=60A - 110 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=40A - 170 270 nC Qgs Gate-Source Charge VDS=48V - 25 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 95 - nC td(on) Turn-on Delay Time VDS=30V - 30 - ns tr Rise Time ID=40A - 130 - ns td(off) Turn-off Delay Time RG=3.3Ω - 70 - ns tf Fall Time VGS=10V - 120 - ns Ciss Input Capacitance VGS=0V - 6800 10880 pF Coss Output Capacitance VDS=25V - 1150 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 850 - pF Rg Gate Resistance f=1.0MHz - 2.1 4.2 Ω Min. Typ. IS=40A, VGS=0V - - 1.3 V . Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=10A, VGS=0V - 70 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 150 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 120A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9970AGP-HF 320 200 T C = 150 C 160 ID , Drain Current (A) ID , Drain Current (A) 240 10V 8.0V 7.0V 6.0V o 10V 8.0V 7.0V 6.0V o T C = 25 C 160 V GS =5.0V 120 V GS =5.0V 80 80 40 0 0 0 8 16 24 32 0 4 8 12 16 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 2.4 I D =1mA I D =60A V G =10V 1.4 1.2 1 . 0.8 Normalized RDS(ON) Normalized BVDSS 2.0 1.6 1.2 0.8 0.6 0.4 0.4 -50 0 50 100 150 -50 0 o 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 1.6 40 I D =1mA 1.2 o Normalized VGS(th) IS(A) 30 o T j =150 C T j =25 C 20 0.8 0.4 10 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9970AGP-HF 12 f=1.0MHz 10000 10 8000 V DS =30V V DS =36V V DS =60V 8 C iss 6000 C (pF) VGS , Gate to Source Voltage (V) I D = 40 A 6 4000 4 2000 C oss C rss 2 0 0 0 40 80 120 160 1 200 5 Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Operation in this area limited by RDS(ON) 100us 100 1ms 10ms 10 100ms DC o T c =25 C Single Pulse 1 . Normalized Thermal Response (R thjc) 1000 ID (A) 9 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP9970AGP-HF MARKING INFORMATION 9970AGP Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence . 5