ISC BUZ93 Easy driver for cost effective application Datasheet

isc Product Specification
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
BUZ93
DESCRIPTION
·High speed switching
·Low RDS(ON)
·Easy driver for cost effective application
APPLICATIONS
·Automotive power actuator drivers
·Motor controls
·DC-DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
600
V
VGS
Gate-Source Voltage
±20
V
Drain [email protected] TC=37℃
3.6
A
Total [email protected]=25℃
80
W
Max. Operating Junction Temperature
-55~150
℃
Storage Temperature Range
-55~150
℃
ID
Ptot
Tj
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
Rth j-a
Thermal Resistance,Junction to Ambient
isc website:www.iscsemi.cn
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MAX
UNIT
1.56
℃/W
75
℃/W
1
isc & iscsemi is registered trademark
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isc Product Specification
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
BUZ93
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
600
VGS(TH)
Gate Threshold Voltage
VDS= VGS; ID= 1mA
2.1
RDS(ON)
Drain-Source On-stage Resistance
IGSS
MAX
UNIT
V
4
V
VGS= 10V; ID= 2A
2.5
Ω
Gate Source Leakage Current
VGS= 20V;VDS= 0
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 600VGS= 0
1
uA
VSD
Diode Forward Voltage
IF= 6.6A;VGS= 0
1.4
V
isc website:www.iscsemi.cn
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2
isc & iscsemi is registered trademark
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