DATA SHEET book, halfpage M3D252 BGY887 CATV amplifier module Product specification Supersedes data of 1997 Dec 17 1999 Mar 30 Philips Semiconductors Product specification CATV amplifier module FEATURES BGY887 PINNING - SOT115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Excellent return loss properties 2 common • Silicon nitride passivation 3 common • Rugged construction 5 +VB • Gold metallization ensures excellent reliability. 7 common 8 common 9 output fpage 1 2 3 8 5 7 9 Side view MSA319 Fig.1 Simplified outline. APPLICATIONS • CATV systems operating in the 40 to 860 MHz frequency range. DESCRIPTION Hybrid dynamic range amplifier module in a SOT115J package operating with a voltage supply of 24 V (DC). QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER CONDITIONS power gain total current consumption (DC) MIN. MAX. UNIT f = 50 MHz 21 22 dB f = 860 MHz 21.5 − dB VB = 24 V − 235 mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT Vi RF input voltage − 65 dBmV Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −20 +100 °C 1999 Mar 30 2 Philips Semiconductors Product specification CATV amplifier module BGY887 CHARACTERISTICS Table 1 Bandwidth 40 to 860 MHz; VB = 24 V; Tcase = 30 °C; ZS = ZL = 75 Ω SYMBOL Gp PARAMETER power gain CONDITIONS MIN. TYP. MAX. UNIT f = 50 MHz 21 21.5 22 dB f = 860 MHz 21.5 22.5 − dB SL slope cable equivalent f = 40 to 860 MHz 0.2 1 2 dB FL flatness of frequency response f = 40 to 860 MHz − ±0.2 ±0.3 dB S11 input return losses f = 40 to 80 MHz 20 29.5 − dB S22 output return losses f = 80 to 160 MHz 18.5 27.5 − dB f = 160 to 320 MHz 17 23 − dB f = 320 to 640 MHz 15.5 22 − dB f = 640 to 860 MHz 14 20 − dB f = 40 to 80 MHz 20 27 − dB f = 80 to 160 MHz 18.5 25 − dB f = 160 to 320 MHz 17 20.5 − dB f = 320 to 640 MHz 15.5 19 − dB f = 640 to 860 MHz 14 19 − dB −45 − +45 deg S21 phase response f = 50 MHz CTB composite triple beat 49 channels flat; Vo = 44 dBmV; − measured at 859.25 MHz −64.5 −62 dB Xmod cross modulation 49 channels flat; Vo = 44 dBmV; − measured at 55.25 MHz −64.5 −61 dB CSO composite second order distortion 49 channels flat; Vo = 44 dBmV; − measured at 860.5 MHz −67.5 −61 dB d2 second order distortion note 1 − −77 −70 dB Vo output voltage dim = −60 dB; note 2 59 60.5 − dBmV F noise figure f = 50 MHz − 4 4.5 dB Itot total current consumption (DC) f = 550 MHz − − 5 dB f = 600 MHz − − 5 dB f = 650 MHz − − 5 dB f = 750 MHz − − 5.5 dB f = 860 MHz − 5 6.5 dB note 3 − 220 235 mA Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz. 2. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo −6 dB; fr = 860.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 849.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 1999 Mar 30 3 Philips Semiconductors Product specification CATV amplifier module Table 2 BGY887 Bandwidth 40 to 860 MHz; VB = 24 V; Tcase = 30 °C; ZS = ZL = 75 Ω SYMBOL Gp SL PARAMETER power gain slope cable equivalent CONDITIONS MIN. TYP. MAX. UNIT f = 50 MHz 21 21.5 22 dB f = 860 MHz 21.5 22.5 − dB f = 40 to 860 MHz 0.2 1 2 dB FL flatness of frequency response f = 40 to 860 MHz − ±0.2 ±0.3 dB S11 input return losses f = 40 to 80 MHz 20 29.5 − dB f = 80 to 160 MHz 18.5 27.5 − dB f = 160 to 320 MHz 17 23 − dB f = 320 to 640 MHz 15.5 22 − dB f = 640 to 860 MHz 14 20 − dB f = 40 to 80 MHz 20 27 − dB S22 output return losses f = 80 to 160 MHz 18.5 25 − dB f = 160 to 320 MHz 17 20.5 − dB f = 320 to 640 MHz 15.5 19 − dB f = 640 to 860 MHz 14 19 − dB S21 phase response f = 50 MHz −45 − +45 deg CTB composite triple beat 129 channels flat; Vo = 42 dBmV; measured at 859.25 MHz − −54 −51 dB Xmod cross modulation 129 channels flat; Vo = 42 dBmV; measured at 55.25 MHz − −60 −57 dB CSO composite second order distortion 129 channels flat; Vo = 42 dBmV; measured at 860.5 MHz − −605 −55 dB d2 second order distortion note 1 − −77 −70 dB Vo output voltage dim = −60 dB; note 2 59 60.5 − dBmV F noise figure see Table 1 − − − dB Itot total current consumption (DC) note 3 − 220 235 mA Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz. 2. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo −6 dB; fr = 860.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 849.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 1999 Mar 30 4 Philips Semiconductors Product specification CATV amplifier module Table 3 BGY887 Bandwidth 40 to 750 MHz; VB = 24 V; Tcase = 30 °C; ZS = ZL = 75 Ω SYMBOL Gp PARAMETER power gain CONDITIONS MIN. TYP. MAX. UNIT f = 50 MHz 21 21.5 22 dB f = 750 MHz 21.5 22.3 − dB f = 40 to 750 MHz 0.2 − 2 dB SL slope cable equivalent FL flatness of frequency response f = 40 to 750 MHz − − ±0.3 dB S11 input return losses f = 40 to 80 MHz 20 29.5 − dB f = 80 to 160 MHz 18.5 27.5 − dB f = 160 to 320 MHz 17 23 − dB f = 320 to 640 MHz 15.5 22 − dB f = 640 to 750 MHz 14 20 − dB f = 40 to 80 MHz 20 27 − dB f = 80 to 160 MHz 18.5 25 − dB f = 160 to 320 MHz 17 20.5 − dB f = 320 to 640 MHz 15.5 19 − dB S22 output return losses f = 640 to 750 MHz 14 19 − dB S21 phase response f = 50 MHz −45 − +45 deg CTB composite triple beat 110 channels flat; Vo = 44 dBmV; measured at 745.25 MHz − −53 −51 dB Xmod cross modulation 110 channels flat; Vo = 44 dBmV; measured at 55.25 MHz − −57 −54 dB CSO composite second order distortion 110 channels flat; Vo = 44 dBmV; measured at 746.5 MHz − −62 −56 dB d2 second order distortion note 1 − −78 −70 dB Vo output voltage dim = −60 dB; note 2 60 62 − dBmV F noise figure see Table 1 − − − dB Itot total current consumption (DC) note 3 − 220 235 mA Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz. 2. Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo−6 dB; fr = 749.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 738.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 1999 Mar 30 5 Philips Semiconductors Product specification CATV amplifier module Table 4 BGY887 Bandwidth 40 to 600 MHz; VB = 24 V; Tcase = 30 °C; ZS = ZL = 75 Ω SYMBOL Gp PARAMETER power gain CONDITIONS MIN. TYP. MAX. UNIT f = 50 MHz 21 21.5 22 dB f = 600 MHz 21.5 22.1 − dB f = 40 to 600 MHz 0.2 − 2 dB SL slope cable equivalent FL flatness of frequency response f = 40 to 600 MHz − − ±0.2 dB S11 input return losses f = 40 to 80 MHz 20 29.5 − dB f = 80 to 160 MHz 18.5 27.5 − dB f = 160 to 320 MHz 17 23 − dB f = 320 to 600 MHz 16 22 − dB f = 40 to 80 MHz 20 27 − dB f = 80 to 160 MHz 18.5 25 − dB f = 160 to 320 MHz 17 20.5 − dB f = 320 to 600 MHz 16 19 − dB S22 output return losses S21 phase response f = 50 MHz −45 − +45 deg CTB composite triple beat 85 channels flat; Vo = 44 dBmV; measured at 595.25 MHz − − −56 dB Xmod cross modulation 85 channels flat; Vo = 44 dBmV; measured at 55.25 MHz − − −57 dB CSO composite second order distortion 85 channels flat; Vo = 44 dBmV; measured at 596.5 MHz − − −58 dB d2 second order distortion note 1 − − −70 dB Vo output voltage dim = −60 dB; note 2 61 − − dBmV F noise figure see Table 1 − − − dB Itot total current consumption (DC) note 3 − 220 235 mA Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 541.25 MHz; Vq = 44 dBmV; measured at fp + fq = 596.5 MHz. 2. Measured according to DIN45004B: fp = 590.25 MHz; Vp = Vo; fq = 597.25 MHz; Vq = Vo −6 dB; fr = 599.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 588.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 1999 Mar 30 6 Philips Semiconductors Product specification CATV amplifier module BGY887 PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S W c e b w M e1 d U2 q2 Q B y M B q1 y M B y M B p U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.1 OUTLINE VERSION b c d D E max. max. max. e e1 F 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38 L min. p Q max. 8.8 4.15 3.85 2.4 REFERENCES IEC JEDEC EIAJ q1 q2 38.1 25.4 10.2 S U1 U2 max. 4.2 44.75 8 EUROPEAN PROJECTION W w 6-32 0.25 UNC y Z max. 0.1 3.8 ISSUE DATE 99-02-06 SOT115J 1999 Mar 30 q 7 Philips Semiconductors Product specification CATV amplifier module BGY887 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Mar 30 8 Philips Semiconductors Product specification CATV amplifier module BGY887 NOTES 1999 Mar 30 9 Philips Semiconductors Product specification CATV amplifier module BGY887 NOTES 1999 Mar 30 10 Philips Semiconductors Product specification CATV amplifier module BGY887 NOTES 1999 Mar 30 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125008/00/04/pp12 Date of release: 1999 Mar 30 Document order number: 9397 750 05304