RF ATC800A100JT 120w gan wideband power amplifier Datasheet

RF3934
120W GaN WIDEBAND POWER AMPLIFIER
Package: Hermetic 2-Pin Flanged Ceramic
Features





Broadband Operation DC to
3.5GHz
Advanced GaN HEMT
Technology
Advanced Heat-Sink
Technology
Small Signal Gain = 13dB at
2GHz
48V Operation Typical
Performance
RF IN
VG
Pin 1 (CUT )
RF OUT
VD
Pin 2
GND
BASE
• Output Power 140W at P3dB
Functional Block Diagram
• Drain Efficiency 60% at P3dB
• -40°C to 85°C Operation
Applications






Commercial Wireless
Infrastructure
Cellular and WiMAX
Infrastructure
Civilian and Military Radar
General Purpose Broadband
Amplifiers
Public Mobile Radios
Industrial, Scientific, and
Medical
Product Description
The RF3934 is a 48V 120W high power discrete amplifier designed for commercial
wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier applications. Using an
advanced high power density Gallium Nitride (GaN) semiconductor process, these
high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3934 is an unmatched GaN transistor packaged in a hermetic, flanged ceramic package. This package provides
excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation
of simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier.
Ordering Information
RF3934S2
RF3934SB
RF3934SQ
RF3934SR
RF3934TR7
RF3934PCK-411
2-piece sample bag
5-piece bag
25-piece bag
100 pieces on 7” short reel
750 pieces on 7” reel
Fully assembled evaluation board optimized for
2.14GHz; 48V
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 14
RF3934
Absolute Maximum Ratings
Parameter
Rating
Unit
Drain Voltage (VD)
150
V
Gate Voltage (VG)
-8 to +2
V
Gate Current (IG)
78
mA
Operational Voltage
65
V
Ruggedness (VSWR)
10:1
Storage Temperature Range
-55 to +125
°C
Operating Temperature Range (TC)
-40 to +85
°C
200
°C
Operating Junction Temperature (TJ)
Human Body Model
Class 1A
MTTF (TJ < 200°C, 95% Confidence Limits)*
3 x 106
Hours
Thermal Resistances, RTH (junction to case)
measured at TC=85°C, DC bias only
1.6
°C/W
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
*MTTF - median time to failure for wear-out failure mode (30% IDSS
degradation) which is determined by the technology process reliability. Refer
to product qualification report for FIT (random) failure rate.
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device voltage and
current must not exceed the maximum operating values specified in the table
below.
Bias Conditions should also satisfy the following expression:
PDISS < (TJ - TC) / RTH J-C and TC = TCASE
Specification
Min.
Typ.
Max.
Parameter
Unit
Condition
Recommended Operating Conditions
Drain Voltage (VDSQ)
28
Gate Voltage (VGSQ)
-4.5
Drain Bias Current
-3.7
48
V
-2.5
V
3500
MHz
440
Frequency of Operation
DC
mA
Capacitance
CRSS
9
pF
VG = - 8V, VD = OV
CISS
40
pF
VG = - 8V, VD = OV
COSS
27.5
pF
VG = - 8V, VD = OV
2
mA
VG = - 8V, Vd = OV
2.5
mA
VG = - 8V, Vd = 48V
DC Functional Test
IG (OFF) - Gate Leakage
ID (OFF) - Drain Leakage
VGS (TH) - Threshold Voltage
-4.2
V
VD = 48V, ID = 20mA
VDS (ON) - Drain Voltage at high current
0.25
V
VG = OV, ID = 1.5A
RF Functional Test
VGSQ
Gain
10
Drain Efficiency
55
Input Return Loss
2 of 14
-3.4
V
VD = 48V, ID = 440mA
12
dB
CW, POUT = 50.8dBm, f = 2140MHz
60
%
CW, POUt = 50.8dBm, f = 2140MHz
-12
dB
CW, POUT = 50.8dBm, f = 2140MHz
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF3934
Parameter
Specification
Min.
Typ.
Max.
Unit
21
dB
CW, f = 900MHz
RF Typical Performance
Small Signal Gain
Small Signal Gain
Condition
[1], [2]
13
dB
CW, f = 2140MHz
Output Power at P3dB
51.60
dBm
CW, f = 900MHz
Output Power at P3dB
51.46
dBm
CW, f = 2140MHz
Drain Efficiency at P3dB
75
%
CW, f = 900MHz
Drain Efficiency at P3dB
60
%
CW, f = 2140MHz
[1] Test Conditions: CW operation, VDSQ = 48V, IDQ= 440mA, T = 25ºC
[2] Performance in a standard tuned test fixture.
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
3 of 14
RF3934
Typical Performance in Standard 2.14GHz Tuned Test Fixture
(CW, T = 25°C, unless otherwise noted)
4 of 14
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF3934
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF3934
Typical Performance in Standard 900MHz Tuned Test Fixture
(CW, T = 25°C, unless otherwise noted)
Gain/ Eciency vs. Pout, f = 900MHz
26
80
24
70
22
60
20
50
18
40
16
30
Gain
14
10
20
Drain 12
40
42
44
46
48
Drain Eciency (%)
Gain (dB)
(Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 440mA)
50
10
52
0
Pout, Output Power (dBm)
6 of 14
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RF3934
Gainvs.Pout
IMDvs.OutputPower
(2Tone1MHzSeperation,Vd=48V,Idqvaried,fc=900MHz)
(Vd=48V,Idq=440mA,f1=899.5MHz,f2=900.5MHz)
0
IntermodulationDistortion(IMD dBc)
24
Gain(dB)
23
22
220mA
21
330mA
440mA
20
550mA
660mA
19
1
10
100
Pout,OutputPower(WPEP)
DS120306
1000
5
10
IMD3
IMD3
IMD5
IMD5
IMD7
IMD7
15
20
25
30
35
40
45
50
1
10
100
Pout,OutputPower(W PEP)
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF3934
Package Drawing
Package Style: Flanged Ceramic
8 of 14
Pin
Function
Description
1
2
3
Gate
Drain
Source
Gate - VG input
Drain - VD RF Output
Source - Ground Base
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF3934
Bias Instruction for RF3934 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.
Evaluation board requires additional external fan cooling.
Connect all supplies before powering evaluation board.
1.
2.
3.
4.
5.
Connect RF cables at RFIN and RFOUT.
Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal.
Apply -8V to VG.
Apply 48V to VD.
Increase VG until drain current reaches 440mA or desired bias point.
6. Turn on the RF input.
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
9 of 14
RF3934
2.14GHz Evaluation Board Schematic
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2.14GHz Evaluation Board Bill of Materials
10 of 14
Component
Value
Manufacturer
Part Number
C1
10pF
ATC
ATC800A100JT
C2, C10, C11, C15
33pF
ATC
ATC800A330JT
C3,C14
0.1F
Murata
GRM32NR72A104KA01L
C4,C13
4.7F
Murata
GRM55ER72A475KA01L
C5
100F
Panasonic
ECE-V1HA101UP
C6
2.0pF
ATC
ATC800A2R0BT
C7
0.3pF
ATC
ATC800A0R3BT
C8
1.5pF
ATC
ATC800A1R5BT
C9
2.7pF
ATC
ATC800A2R7BT
C12
100F
Panasonic
EEV-TG2A101M
C17
1.8pF
ATC
ATC800A1R8BT
R1
10
Panasonic
ERJ-8GEYJ100V
C16, C18, C19
Not used
-
-
PCB
RO4350, 0.030" thick
dielectric
Rogers
-
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120306
RF3934
2.14GHz Evaluation Board Layout
Device Impedances
Frequency
Z Source ()
2110MHz
1.58 - j2.56
Z Load (
3.5 - j0.08
2140MHz
1.49 - j2.25
3.46 + j0.38
2170MHz
1.42 - j1.96
3.43 + j0.85
Note: Device impedances reported are the measured evaluation board impedances chosen for a trade off of efficiency, peak power, and linearity
performance across the entire frequency bandwidth.
DS120306
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 14
RF3934
900MHz Evaluation Board Schematic
VGATE
VDRAIN
C5
C4
C3
C1
C11
C14
C13
+
+
R1
J1
RF IN
50  strip
RF3934
C2
C6
C7
C8 C9
C10
50  strip
C12
J2
RF OUT
C15
900MHz Evaluation Board Bill of Materials
12 of 14
Component
Value
Manufacturer
Part Number
C1, C2, C10, C11
68pF
ATC
ATC800A680JT
C3,C14
0.1F
Murata
GRM32NR72A104KA01L
C4,C13
4.7F
Murata
GRM55ER72A475KA01L
C15
NOT POPULATED
C6
15pF
ATC
ATC800A150JT
C7
22pF
ATC
ATC800A220JT
C8
12pF
ATC
ATC800A120JT
C9
2.2pF
ATC
ATC800A2R2BT
C12
330F
Panasonic
EEU-FC2A331
C5
100F
Panasonic
ECE-V1HA101UP
R1
10
Panasonic
ERJ-8GEYJ100V
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120306
RF3934
900MHz Evaluation Board Layout
Device Impedances
Frequency
Z Source()
Z Load (
880MHz
1.24 + j3.0
5.49 + j3.4
900MHz
1.14 + j3.63
5.27 + j3.9
920MHz
1.11 + j4.20
5.03 + j4.40
Note: Device impedances reported are the measured evaluation board impedances chosen for a trade off of efficiency, peak power, and linearity
performance across the entire frequency bandwidth.
DS120306
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
13 of 14
RF3934
Device Handling/Environmental Conditions
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or
evaluation boards.
GaN HEMT Capacitances
The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies.
These capacitances exist across all three terminals of the device. The physical manufactured characteristics of
the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These
capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances
measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step.
Any internal matching is included in the terminal capacitance measurements. The capacitance values presented
in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse
(CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows:
CISS = CGD + CGS
COSS = CGD + CDS
CRSS = CGD
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of
the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken
to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care
not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain
current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the
operational characteristics for this device, considering manufacturing variations and expected performance.
The user may choose alternate conditions for biasing this device based on performance trade-offs.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of
the die. At the same time, the package temperature is measured using a thermocouple touching the backside of
the die embedded in the device heatsink but sized to prevent the measurement system from impacting the
results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated.
14 of 14
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120306
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