AOD454 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD454 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS (V) = 40V ID = 12 A (VGS = 10V) RDS(ON) < 33 mΩ (VGS = 10V) RDS(ON) < 47 mΩ (VGS = 4.5V) -RoHS Compliant -Halogen Free* 100% UIS Tested! 100% Rg Tested! TO-252 D-PAK Top View D Bottom View D G S G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G C C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A C TA=25°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. V A 10 IDM 30 IAR 12 A EAR 20 mJ 50 2 W 1.3 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 25 PDSM TA=70°C Maximum Junction-to-Case B ±20 ID PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 12 TC=100°C Pulsed Drain Current Avalanche Current Maximum 40 RθJA RθJC Typ 17.4 50 2.3 °C Max 30 60 3 Units °C/W °C/W °C/W www.aosmd.com AOD454 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=10mA, VGS=0V Typ V 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.8 ID(ON) On state drain current VGS=10V, VDS=5V 30 TJ=55°C VGS=10V, ID=12A ±100 nA 2.3 3 V 25 33 39 52 47 mΩ 1 V 12 A 404 500 pF 95 150 pF 37 60 pF A Static Drain-Source On-Resistance VGS=4.5V, ID=6A 34 gFS Forward Transconductance VDS=5V, ID=12A 25 VSD Diode Forward Voltage IS=1A, VGS=0V 0.76 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=20V, f=1MHz µA 5 RDS(ON) Output Capacitance Units 40 VDS=32V, VGS=0V IDSS Coss Max mΩ S 2.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 9.2 nC Qg(4.5V) Total Gate Charge 4.5 nC 1.6 nC 2.6 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=12A VGS=10V, VDS=20V, RL=1.7Ω, RGEN=3Ω 3.5 ns 6 ns 13.2 ns 3.5 ns ns nC tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=12A, dI/dt=100A/µs 22.9 Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs 18.3 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev 5: Sep. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 30 5V 10V VDS=5V 25 4.5V 15 20 ID(A) ID (A) 4V 15 10 125°C 10 5 VGS=3.5V 5 25°C 0 0 0 1 2 3 4 2 5 2.5 50 3.5 4 Normalized On-Resistance 40 4.5 500 150 60 1.8 45 RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=4.5V 35 30 VGS=10V 25 VGS=10V ID=12A 1.6 1.4 VGS=4.5V ID=6A 1.2 1 20 0 4 8 12 16 20 0.8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 1.0E+01 ID=12A 90 1.0E+00 125°C 80 1.0E-01 125°C IS (A) RDS(ON) (mΩ ) 70 60 1.0E-02 50 25°C 1.0E-03 40 30 1.0E-04 25°C 20 1.0E-05 10 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 700 10 Capacitance (pF) VGS (Volts) 600 VDS=20V ID=12A 8 6 4 Ciss 500 400 300 Coss 200 Crss 2 100 0 0 2 4 6 8 0 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10µs 15 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=175°C TC=25°C 160 ID (Amps) 1ms 10ms 1.0 40 500 150 60 100µs Power (W) 10.0 10 200 TJ(Max)=175°C, TC=25°C RDS(ON) limited 5 120 80 DC 40 0 0.0001 0.1 0.1 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 L⋅ ID tA = BV − VDD 12 10 Power Dissipation (W) ID(A), Peak Avalanche Current 14 8 6 4 TA=25°C 2 0 0.00001 20 15 10 5 0 0.0001 0.001 0 25 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 50 75 100 14 150 175 500 150 60 50 TA=25°C 12 40 10 Power (W) Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note B) 8 6 30 20 4 10 2 0 0.001 0 0 25 50 75 100 125 150 175 Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note B) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD454 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com