BFP183R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs Pin Configuration 1=E 2=C 3=E Package 4=B SOT143R Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 Base current IB 5 Total power dissipation Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA TS 76 °C 1) Thermal Resistance Junction - soldering point 2) RthJS 295 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Aug-09-2001 BFP183R Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 12 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 50 100 200 DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 15 mA, VCE = 8 V 2 Aug-09-2001 BFP183R Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. fT 6 8 - Ccb - 0.35 0.5 Cce - 0.27 - Ceb - 1 - AC characteristics (verified by random sampling) Transition frequency GHz IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 1.2 - f = 1.8 GHz - 2 - Gms - 21 - Gma - 14 - - 16.5 - - 11 - Power gain, maximum stable 1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz |S21e|2 Transducer gain IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 1G ms 2G ma = |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2) 3 Aug-09-2001 BFP183R SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.0345 fA BF = 115.98 - NF = 0.80799 - VAF = 14.772 V IKF = 0.14562 A ISE = 16.818 fA NE = 1.2149 - BR = 10.016 - NR = 0.99543 - VAR = 3.4276 V IKR = 0.013483 A ISC = 1.3559 fA NC = 0.85331 - RB = 2.5426 IRB = 0.43801 mA RBM = 1.0112 RE = 1.3435 RC = 0.20486 CJE = 23.077 fF VJE = 1.0792 V MJE = 0.45354 - TF = 22.746 ps XTF = 0.36823 - VTF = 0.50905 V ITF = 1.8773 mA PTF = 0 deg CJC = 460.11 fF VJC = 1.1967 V MJC = 0.3 - XCJC = 0.053823 - TR = 1.0553 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.54852 - TNOM 300 K L BI = 0.89 nH L BO = 0.73 nH L EI = 0.4 nH L EO = 0.15 nH L CI = 0 nH L CO = 0.42 nH C BE = 189 fF C CB = 15 fF C CE = 187 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-09-2001 BFP183R Total power dissipation Ptot = f (TS ) 300 P tot mW 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC 10 3 RthJS K/W 10 2 10 1 -7 10 -6 10 -5 10 -4 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 - -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Aug-09-2001 BFP183R Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 10.0 0.70 pF GHz 0.60 8.0 0.55 0.45 fT Ccb 0.50 7.0 10V 5V 6.0 3V 0.40 5.0 0.35 2V 0.30 4.0 0.25 0.20 3.0 0.15 2.0 1V 0.7V 0.10 1.0 0.05 0.00 0 4 8 12 V 16 0.0 0 22 5 10 15 20 25 30 VCB 35 mA 45 IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 22 16 10V dB dB 10V 5V 18 3V 12 2V 10 3V G G 2V 16 8 14 1V 6 1V 12 0.7V 4 10 8 0 2 0.7V 5 10 15 20 25 30 35 mA 0 0 45 IC 5 10 15 20 25 30 35 mA 45 IC 6 Aug-09-2001 BFP183R Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 28 22 IC=15mA 0.9GHz 8V dBm dB 24 5V 18 22 IP 3 G 0.9GHz 16 20 3V 1.8GHz 18 14 16 12 2V 1.8GHz 14 10 12 8 10 1V 6 0 2 4 6 V 8 8 2 12 6 10 14 18 22 26 VCE 30 mA 38 IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 35 30 IC=15mA IC =15mA dB dB G S21 25 20 20 15 15 10 10V 10 1V 0.7V 10V 5 5 1V 0.7V 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 0 0.0 3.5 f 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f 7 Aug-09-2001