Infrared Emitting Diodes(GaAs) KODENSHI EL-23G DIMENSIONS (Unit : mm) The EL-23G, a high-power GaAs IRED mounted in a clear sidelooking package, is compact, low profile, and easy to mount. FEATURES •Compact •Low profile package •Low-cost •Sidelooking plastic package APPLICATIONS •Photointerrupters •Optical switches •Toys MAXIMUM RATINGS Item Reverse voltage Forward current Pulse forward current *1 Power dissipation Operating temp. Storage temp. Soldering temp. *2 (Ta=25℃) Symbol Rating Unit VR IF IFP PD Topr. Tstg. Tsol. 5 60 1 100 -20~+100 -30~+100 240 V mA A mW ℃ ℃ ℃ *1. pulse width ：tw ≦100 μ sec.period ：T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle (Ta=25℃) Symbol Conditions VF IR Ct PO λp Δλ △θ IF=60mA VR=5V f=1MHz IF=60mA IF=60mA IF=60mA Min. Typ. Max. Unit. 1.3 1.6 10 V μ A pF mW/sr nm nm deg. 25 2.0 940 50 ±30 - 1- Infrared Emitting Diodes(GaAs) EL-23G Power dissipation Vs. Ambient temperature Relative intensity Vs. Wavelength Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Forward current vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2-