DG2031 Vishay Siliconix Low-Voltage, Sub 1-W, Dual SPDT Analog Switch FEATURES D D D D D D BENEFITS Low Voltage Operation (1.8 V to 5.5 V) Low On-Resistance - rON: 0.45 W −71 dB OIRR @ 2.7 V, 100 kHz ESD Protection >2000 V MSOP-10 Package Available in Lead (Pb)-Free D D D D D APPLICATIONS Reduced Power Consumption High Accuracy Reduce Board Space 1.6-V Logic Compatible High Bandwidth D D D D D D Cellular Phones Speaker Headset Switching Audio and Video Signal Routing PCMCIA Cards Battery Operated Systems Relay Replacement DESCRIPTION The DG2031 is a sub 1-W (0.75 W @ 2.7 V ) dual SPDT analog switch designed for low voltage applications. The DG2031 has on-resistance matching (less than 0.05 W @ 2.7 V) and flatness (less than 0.2 W @ 2.7 V) that are guaranteed over the entire voltage range. Additionally, low logic thresholds makes the DG2031 an ideal interface to low voltage DSP control signals. The DG2031 has fast switching speed (on/off time @ 34 and 24 ns) with break-before-make guaranteed. In the On condition, all switching elements conduct equally in both directions. Off-isolation and crosstalk is −71 dB @ 100 kHz. The DG2031 is built on Vishay Siliconix’s high-density low voltage CMOS process. An eptiaxial layer is built in to prevent latchup. The DG2031 contains the additional benefit of 2,000-V ESD protection. Packaged in space saving MSOP-10, the DG2031 is a high performance, low rON switch for battery powered applications. The DG2031 is available in both standard and lead (Pb)-free packaging. No lead is used in the manufacturing process, for the lead (Pb)-free version, either inside the device/package or on external terminations. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION MSOP-10 V+ 1 10 NO2 NO1 2 9 COM2 COM1 3 8 IN2 IN1 4 7 NC2 NC1 5 6 GND TRUTH TABLE Logic NC1 and NC2 NO1 and NO2 0 ON OFF 1 OFF ON ORDERING INFORMATION Top View Document Number: 71966 S-41158—Rev. E, 21-Jun-04 Temp Range Package -40 to 85°C MSOP-10 (with Tape and Reel) Standard Part Number Lead (Pb)-Free Part Number DG2031DQ-T1 DG2031DQ-T1—E3 www.vishay.com 1 DG2031 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (NO, NC, COM) . . . . . . . . . . . . . . . . . . . . . . . "300 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "500 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C ESD per Method 3015.7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2 kV Power Dissipation (Packages)b MSOP-10c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 4.0 mW/_C above 70_C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 3 V) Limits Test Conditions Otherwise Unless Specified V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve −40 to 85_C Tempa Minb VNO, VNC, VCOM Full 0 On-Resistance rON Room Full 0.50 0.75 0.8 rON Flatnessd rON Flatness Room 0.12 0.2 On-Resistance Match Between Channelsd DrDS(on) Parameter Symbol Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged Switch Off Leakage Current INO(off), INC(off) ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 2.7 2 7 V, V VCOM = 0.6/1.5 0 6/1 5 V INO, INC = 100 mA Room V+ = 3.3 V, VNO, VNC = 0.3 V/3 V VCOM = 3 V/0.3 V V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V W 0.05 Room Full −1 −10 1 10 Room Full −1 −10 1 10 Room Full −1 −10 1 10 1.6 nA Digital Control Input High Voltaged VINH Full Input Low Voltage VINL Full Input Capacitance Input Current Full Cin IINL or IINH 0.4 VIN = 0 or V+ Full 9 1 V pF 1 mA Dynamic Characteristics Turn-On Time tON VNO or VNC = 2.0 2 0 V, V RL = 50 W, W CL = 35 pF Turn-Off Time Break-Before-Make Time tOFF Room Full 34 58 59 Room Full 24 49 50 td VNO or VNC = 2.0 V, RL = 50 W, CL = 35 pF Full Charge Injectiond QINJ CL = 1 nF, VGEN = 1.5 V, RGEN = 0 W Room 4 Off-Isolationd OIRR Room −71 Crosstalkd XTALK Room −71 CNO(off) Room 117 CNC(off) Room 115 Room 367 Room 368 NO, NC Off Capacitanced Channel-On Capacitanced CNO(on) RL = 50 W, W CL = 5 pF pF, f = 100 KHz VIN = 0 or V+, V+ f = 1 MHz CNC(on) 2 ns 10 pC dB pF Power Supply Power Supply Range V+ Power Supply Current I+ 1.8 VIN = 0 or V+ Full 0.01 5.5 V 1.0 mA Notes: a. Room = 25°C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. www.vishay.com 2 Document Number: 71966 S-41158—Rev. E, 21-Jun-04 DG2031 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rON vs. VCOM and Supply Voltage rON vs. Analog Voltage and Temperature (NC1) 1.2 1.0 T = 25_C IA = 100 mA 0.9 0.8 0.6 V+ = 3.0 V NC NO 0.4 V+ = 5.0 V NC NO V+ = 2 V 85_C 25_C −40_C 0.8 r ON − On-Resistance ( W ) r ON − On-Resistance ( W ) 1.0 0.7 V+ = 3 V 85_C 25_C −40_C 0.6 0.5 0.4 0.2 0.3 0.0 0.2 0 1 2 3 4 0 5 1 2 VCOM − Analog Voltage (V) Supply Current vs. Temperature 4 5 Supply Current vs. Input Switching Frequency 100 mA V+ = 5 V 10 mA I+ − Supply Current (A) 10000 1000 V+ = 5 V VIN = 0 V 100 10 −60 3 VCOM − Analog Voltage (V) 100000 I+ − Supply Current (nA) V+ = 5 V 85_C 25_C −40_C V+ = 3 V VIN = 0 V 1 mA 100 mA 10 mA 1 mA 100 nA 10 nA −40 −20 0 20 40 60 80 100 10 100 1K 10 K 100 K 1M 10 M Input Switching Frequency (Hz) Temperature (_C) Leakage Current vs. Temperature Leakage vs. Analog Voltage 10000 600 V+ = 5 V V+ = 5 V ICOM(off) ICOM(on) 1000 INO(off), INC(off) 100 Leakage Current (pA) Leakage Current (pA) 400 200 ICOM(off) ICOM(on) 0 INO(off), INC(off) −200 −400 10 −60 −40 −20 0 20 40 Temperature (_C) Document Number: 71966 S-41158—Rev. E, 21-Jun-04 60 80 100 −600 0 1 2 3 4 5 VCOM − Analog Voltage (V) www.vishay.com 3 DG2031 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Switching Time vs. Temperature 80 NO Switch RL = 50 W tON V+ = 2 V 60 50 tON V+ = 3 V 40 tOFF V+ = 2 V 30 tOFF V+ = 3 V tON V+ = 5 V tOFF V+ = 5 V 20 10 0 −60 −40 NC Switch RL = 50 W 70 −20 0 20 40 60 80 t ON / t OFF − Switching Time (ns) 70 t ON / t OFF − Switching Time (ns) Switching Time vs. Temperature 80 60 50 40 tOFF V+ = 2 V tONV+ = 5 V tOFF V+ = 3 V tOFF V+ = 5 V 20 10 −40 −20 0 Temperature (_C) LOSS 80 100 − Switching Threshold (V) OIRR −50 V+ = 5 V RL = 50 W 2.5 2.0 1.5 1.0 VT Loss, OIRR, X TALK (dB) 60 Switching Threshold vs. Supply Voltage Loss XTALK 40 3.0 10 −30 20 Temperature (_C) Insertion Loss, Off-Isolation Crosstalk vs. Frequency −10 tON V+ = 3 V 30 0 −60 100 tON V+ = 2 V −70 0.5 0.0 −90 1M 100 K 100 M 10 M 1G 0 1 2 3 4 5 6 7 V+ − Supply Voltage (V) Frequency (Hz) Charge Injection vs. Analog Voltage 350 Q − Charge Injection (pC) 250 150 50 V+ = 5 V −50 V+ = 3 V −150 −250 −350 0 1 2 3 4 5 VCOM − Analog Voltage (V) www.vishay.com 4 Document Number: 71966 S-41158—Rev. E, 21-Jun-04 DG2031 Vishay Siliconix TEST CIRCUITS V+ VINH Logic Input V+ NO or NC Switch Input VOUT RL 50 W GND tr t 5 ns tf t 5 ns VINL Switch Output COM IN Logic Input 50% 0.9 x VOUT Switch Output CL 35 pF 0V tOFF tON 0V Logic “1” = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT + VCOM ǒ RL Ǔ R L ) R ON FIGURE 1. Switching Time V+ Logic Input V+ VNO VNC COM NO VO VINH tr t 5 ns tf t 5 ns VINL NC RL 50 W IN CL 35 pF GND VNC = VNO VO 90% Switch 0V Output tD tD CL (includes fixture and stray capacitance) FIGURE 3. Break-Before-Make Interval V+ DVOUT VOUT Rgen + V+ NC or NO COM IN VIN = 0 − V+ VOUT CL = 1 nF GND IN On Off On Q = DVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. FIGURE 2. Charge Injection Document Number: 71966 S-41158—Rev. E, 21-Jun-04 www.vishay.com 5 DG2031 Vishay Siliconix TEST CIRCUITS V+ V+ 10 nF 10 nF V+ V+ NC or NO IN COM COM RL Analyzer Meter 0 V, 2.4 V GND IN NC or NO HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz VCOM Off Isolation + 20 log V NOńNC FIGURE 4. Off-Isolation www.vishay.com 6 COM 0V, 2.4 V FIGURE 5. Channel Off/On Capacitance Document Number: 71966 S-41158—Rev. E, 21-Jun-04