DMS3016SSSA N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(ON) - minimizes conduction losses • Ultra Low VSD – enhanced to reduce losses due to body diode conduction • Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses • Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies • Avalanche rugged – IAR and EAR rated Lead Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.072 grams (approximate) S D S D S D G D Top View Internal Schematic Top View Ordering Information (Note 3) Part Number DMS3016SSSA-13 Notes: Case SO-8 Packaging 2500 / Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information 8 5 Logo S3016SA Part no. YY WW 1 DMS3016SSSA Document number: DS35073 Rev. 1 - 2 4 Xth week: 01 ~ 53 Year: “09” = 2009 Year: “10” = 2010 1 of 6 www.diodes.com October 2010 © Diodes Incorporated DMS3016SSSA Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = 4.5V Unit V V EAR Value 30 ±12 9.8 6.3 90 13 25.4 Symbol PD RθJA TJ, TSTG Value 1.54 81 -55 to +150 Unit W °C/W °C TA = 25°C TA = 85°C Steady State ID Pulsed Drain Current (Note 5) Avalanche Current (Note 5) (Note 6) Repetitive Avalanche Energy (Note 5) (Note 6) L = 0.3mH IDM IAR A A A mJ Thermal Characteristics Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) Operating and Storage Temperature Range Electrical Characteristics @ TA = 25°C unless otherwise stated Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1.0 ±100 V mA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD IS 9 11 11 0.35 - 2.3 13 16 0.6 5 V Static Drain-Source On-Resistance 1.0 - VDS = VGS, ID = 250μA VGS = 10V, ID = 9.8A VGS = 4.5V, ID = 9.8A VDS = 5V, ID = 9.8A VGS = 0V, IS = 1A - Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf 0.53 - 1849 158 123 2.68 18.5 43 4.7 4.0 6.62 8.73 36.41 4.69 4.82 - Forward Transfer Admittance Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 4.5V Total Gate Charge VGS = 10V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS =15V, VGS = 0V, f = 1.0MHz VDS =0V, VGS = 0V, f = 1MHz VDS = 15V, VGS = 10V, ID = 9.8A VGS = 10V, VDS = 10V, RG = 3Ω, RL = 1.2Ω 4. Device mounted on minimum recommended layout. The value in any given application depends on the user’s specific board design. 5. Repetitive rating, pulse width limited by junction temperature. 6. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMS3016SSSA Document number: DS35073 Rev. 1 - 2 2 of 6 www.diodes.com October 2010 © Diodes Incorporated DMS3016SSSA 30 30 VGS = 4.5V VGS = 3.5V 20 ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 4.0V 25 VGS = 3.0V 15 VGS = 2.5V 10 VDS = 5V 20 15 VGS = 150°C 10 VGS = 125°C VGS = 85°C 5 5 VGS = 25°C VGS = 2.0V 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 2 0.04 VGS = 2.5V 0.02 VGS = 4.5V 0.01 VGS = 10V 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.6 VGS = 4.5V ID = 10A 1.4 VGS = 10V ID = 20A 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Document number: DS35073 Rev. 1 - 2 3 VGS = 4.5V 0.03 TA = 150°C 0.02 TA = 125°C TA = 85°C TA = 25°C 0.01 TA = -55°C 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.03 0.02 VGS = 4.5V ID = 10A 0.01 VGS = 10V ID = 20A 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature Fig. 5 On-Resistance Variation with Temperature DMS3016SSSA 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 0.04 30 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) 0.03 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = -55°C 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 2.2V 3 of 6 www.diodes.com October 2010 © Diodes Incorporated DMS3016SSSA 20 2.5 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 3.0 2.0 ID = 100mA 1.5 1.0 TA = 25°C 12 8 4 0.5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10,000 10,000 f = 1MHz IDSS, LEAKAGE CURRENT (µA) C, CAPACITANCE (pF) T A = 125°C Ciss 1,000 Coss Crss 100 10 1,000 TA = 85°C 100 10 TA = 25°C 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 0 30 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 30 VGS, GATE-SOURCE VOLTAGE (V) 10 VDS = 15V ID = 12.7A 8 6 4 2 0 0 5 10 15 20 25 30 35 40 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMS3016SSSA Document number: DS35073 Rev. 1 - 2 45 4 of 6 www.diodes.com October 2010 © Diodes Incorporated DMS3016SSSA r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 R θJA(t) = r(t) * RθJA R θJA = 80°C/W D = 0.02 0.01 P(pk) D = 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 10 100 1,000 0.254 Package Outline Dimensions E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMS3016SSSA Document number: DS35073 Rev. 1 - 2 5 of 6 www.diodes.com October 2010 © Diodes Incorporated DMS3016SSSA IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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