CM100E3U-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Chopper IGBTMOD™ U-Series Module 100 Amperes/600 Volts A D P - NUTS (3 PLACES) .47 [12mm] DEEP CM B C2E1 Q(2 PLACES) E2 E2 G2 N C1 E H F G M K T K U J Description: Powerex Chopper IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor having a reverse-connected superfast recovery free-wheel diode and an anode-collector connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. R #110 TAB T S C L Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (150ns) Free-Wheel Diode □ High Frequency Operation (15-20kHz) □ Isolated Baseplate for Easy Heat Sinking G2 E2 C2E1 C1 E2 Outline Drawing and Circuit Diagram Dimensions Inches Dimensions Inches A 3.70 94.0 L 0.84 21.2 1.89 48.0 M 0.67 17.0 N 0.28 7.0 P M5 11.0 Q 0.26 B C Millimeters 1.18 +0.04/-0.02 30.0 +1.0/-0.5 D 3.15±0.01 E 0.43 80.0±0.25 Millimeters M5 6.5 F 0.16 4.0 R 0.02 4.0 G 0.51 13.0 S 0.30 7.5 H 0.02 0.5 T 0.63 16.0 J 0.53 13.5 U 0.98 25.0 K 0.91 23.0 Applications: □ DC Motor Control □ Boost Regulator Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100E3U-12H is a 600V (VCES), 100 Ampere Chopper IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 100 12 111 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100E3U-12H Chopper IGBTMOD™ U-Series Module 100 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM100E3U-12H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 100 Amperes ICM 200* Amperes IE 100 Amperes Peak Emitter Current** IEM 200* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 400 Watts Mounting Torque, M5 Main Terminal – 31 in-lb Mounting Torque, M6 Mounting – 40 in-lb Weight – 310 Grams Viso 2500 Volts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA 4.5 6 7.5 Volts – 2.4 3.0 Volts – Volts – nC Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C IC = 100A, VGE = 15V, Tj = 125°C – QG VCC = 300V, IC = 100A, VGE = 15V – Total Gate Charge Typ. 2.6 200 Max. Units Emitter-Collector Voltage** VEC IE = 100A, VGE = 0V – – 2.6 Volts Emitter-Collector Voltage VFM IF = 100A, Clamp Diode Part – – 2.6 Volts Test Conditions Min. Typ. Max. Units – – 8.8 nf VCE = 10V, VGE = 0V – – 4.8 nf – – VCC = 300V, IC = 100A, – – **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Times Fall Time nf ns tr VGE1 = VGE2 = 15V, – – 250 ns td(off) RG = 6.3V, Resistive – – 200 ns tf Load Switching Operation – – 300 ns Diode Reverse Recovery Time** trr IE = 100A, diE/dt = -200A/µs – – 160 ns Diode Reverse Recovery Charge** Qrr IE = 100A, diE/dt = -200A/µs – 0.24 Diode Reverse Recovery Time trr IF = 100A, Clamp Diode Part – – Diode Reverse Recovery Charge Qrr diF/dt = -200A/µs – 0.24 **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 112 1.3 100 – µC 160 ns – µC Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100E3U-12H Chopper IGBTMOD™ U-Series Module 100 Amperes/600 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT – – 0.31 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi – – 0.7 °C/W Thermal Resistance, Junction to Case Rth(j-c) Clamp Diode Part – – 0.7 °C/W Contact Thermal Resistance Rth(c-f) – 0.035 – °C/W Per Module, Thermal Grease Applied OUTPUT CHARACTERISTICS (TYPICAL) 200 14 13 VGE = 20V 160 15 12 120 11 80 10 40 9 5 VCE = 10V Tj = 25°C Tj = 125°C 160 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 120 80 40 8 0 0 0 2 4 6 8 3 2 1 4 8 12 16 0 20 40 80 120 160 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 10 102 Tj = 25°C 8 IC = 200A 6 IC = 100A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 4 0 0 10 VGE = 15V Tj = 25°C Tj = 125°C 102 200 VGE = 0V f = 1MHz 101 Cies 100 Coes 10-1 Cres IC = 40A 0 0 4 8 12 16 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 101 1.0 1.4 1.8 2.2 2.6 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-2 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 113 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100E3U-12H Chopper IGBTMOD™ U-Series Module 100 Amperes/600 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) td(off) tf 102 td(on) 102 101 101 101 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS ( IGBT) 100 10-2 10-1 100 10-1 10-1 10-2 10-2 10-5 TIME, (s) 114 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.31°C/W 10-3 10-4 100 103 102 EMITTER CURRENT, IE, (AMPERES) 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) COLLECTOR CURRENT, IC, (AMPERES) 10-3 101 101 Irr tr 101 100 trr 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.7°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 IC = 100A 16 VCC = 200V VCC = 300V 12 8 4 0 0 50 100 150 200 GATE CHARGE, QG, (nC) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) di/dt = -200A/µsec Tj = 25°C REVERSE RECOVERY TIME, trr, (ns) SWITCHING TIME, (ns) VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 125°C GATE CHARGE, VGE 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 103 10-3 10-3 250 300